JPS5879734A - Table position controller detecting existence of wafer - Google Patents

Table position controller detecting existence of wafer

Info

Publication number
JPS5879734A
JPS5879734A JP17718981A JP17718981A JPS5879734A JP S5879734 A JPS5879734 A JP S5879734A JP 17718981 A JP17718981 A JP 17718981A JP 17718981 A JP17718981 A JP 17718981A JP S5879734 A JPS5879734 A JP S5879734A
Authority
JP
Japan
Prior art keywords
laser beam
wafer
laser
refracted
beam passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17718981A
Other languages
Japanese (ja)
Other versions
JPS6122464B2 (en
Inventor
Keiji Tada
多田 啓司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17718981A priority Critical patent/JPS5879734A/en
Publication of JPS5879734A publication Critical patent/JPS5879734A/en
Publication of JPS6122464B2 publication Critical patent/JPS6122464B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

Abstract

PURPOSE:To effect an accurate positioning of a wafer while eliminating noises as well as to make it possible to detect the existence of a wafer independently of the surface condition of the wafer, by a method wherein a position control is effected by means of a laser beam passed through a half-mirror, and the existence of a wafer is detected according to whether a refracted laser beam is received or not. CONSTITUTION:A part of the laser beam from a laser oscillator 20 is passed through a half-mirror 28 and is reflected by a mirror 30 obliquely mounted on a driving shaft 18. The reflected laser beam enters a reflected-laser receiver 35 having two light-receiving elements provided on the right and left of the light- receiving surface thereof. A position control is effected by rotating a table 19 through a driving device 12 until the quantities of light received by the light- receiving elements equal each other. Thereafter, the existence of a wafer on the table 19 is detected according to whether the laser beam refracted by a mirror 28 is incident on a refracted laser beam receiver 34.

Description

【発明の詳細な説明】 本発明は、ウェーハ有無判定テーブル位置制御装置に係
シ、特に、半導体製造装置でテーブル上のウェーハの有
無の判定並びにテーブルの位置制御t−1台のレーザ発
振器からのレーザ光によル行うのに好適なウェーハ有無
判定テーブル位置制御装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer presence/absence determination table position control device, and in particular, to a device for determining the presence/absence of a wafer on a table in semiconductor manufacturing equipment and controlling the table position from t-1 laser oscillators. The present invention relates to a wafer presence/absence determination table position control device suitable for performing laser light determination.

従来の半導体製造装置に適用されているウェーハ有無判
定テーブル位置制御装置をM1図により説明する。
A wafer presence/absence determination table position control device applied to a conventional semiconductor manufacturing apparatus will be explained with reference to FIG. M1.

jli1図で、上部壁にレーザ通過路であるレーザ光通
過孔lOと窓11が設けられ下部壁に駆動装Wl12を
内股したシールド*13が具設された処理fi14に、
レーザ光通過孔lOと窓11との対向位置にレーザ通過
孔15が穿設された固定電極板16と、ウェーハ17が
載置される電極板で、かつ、シールド室13に内設され
た駆動装置稔と駆動軸18に一介して回動可能に連結さ
れたテーブル19とが上下方向に対向して内設されてい
る。処理1i114の上部壁の外側には、レーザ光通過
孔10と対向しレーザ発振器加が設置され、同様に、ウ
ェーハ有無判定装5121に接続された反射レーザ光受
光器nがレーザ発振器mから発せられたレーザ光がウェ
ーハ17の表面で反射されレーザ光通過孔ts、toと
窓11t−通過した反射レーザ光の進行軸上に設けられ
ている。シールド室13に内設された駆動軸錫には駆動
軸詔と一体回動可能にスリット付円板器が取付けられ、
スリット付円板器の端縁部に近接し駆動装置認と接続さ
れたテーブル位置制御装置冴に接続されたフォトセンサ
5が取付けられている。また、テーブル19のウェーハ
17の載置位置で、かつ、レーザ発振器部から発せられ
たレーザ光の進行軸上に吸光体温がテーブルWに堀設さ
れ、高周波電源4が固定電極板16とテーブル19とに
それぞれ接続されている。
In Fig. jli1, processing fi14 is provided with a laser beam passage hole lO and a window 11 as a laser passageway on the upper wall, and a shield *13 with a drive unit Wl12 inside the lower wall,
A fixed electrode plate 16 in which a laser passage hole 15 is formed at a position opposite to the laser beam passage hole 1O and the window 11, and a drive plate on which a wafer 17 is placed and which is installed inside the shield chamber 13. A table 19 rotatably connected to the device holder and a drive shaft 18 is disposed inside the device so as to face each other in the vertical direction. A laser oscillator is installed on the outside of the upper wall of the processing 1i 114, facing the laser beam passage hole 10, and similarly, a reflected laser beam receiver n connected to the wafer presence/absence determination device 5121 receives the light emitted from the laser oscillator m. The laser beam is reflected on the surface of the wafer 17, and the laser beam passing holes ts, to and the window 11t are provided on the traveling axis of the reflected laser beam. A disc with a slit is attached to the drive shaft tin installed in the shield chamber 13 so as to be able to rotate integrally with the drive shaft cover.
A photosensor 5 is attached close to the edge of the slitted disc and connected to a table position control device connected to a drive device. Further, a light absorbing body temperature is provided in the table W at the position where the wafer 17 is placed on the table 19 and on the traveling axis of the laser beam emitted from the laser oscillator section, and the high frequency power source 4 is connected to the fixed electrode plate 16 and the table 19. are connected to each.

この場合、テーブルw上のウェーハ有無判定並びにテー
ブル■の位置制御は次のように行われる。
In this case, the determination of the presence or absence of a wafer on the table w and the position control of the table (2) are performed as follows.

まず、テーブル上のクエーハ有無判定を行う前に、テー
ブルを上のウェーハ載置位置が所定の位置になるように
、また、レーザ発振1i20から発せられたレーザ光の
進行軸上に吸光体墓がくるように、テーブル19.駆動
軸化と一体回動するスリット付円板器のスリットを7オ
トセンサ6で検出し、テーブル位置制御装置124で駆
動装置りを適正に回動することによりテーブル19は適
正位置に制御される。その後、レーザ発振器加から発せ
られたレーザ光がウェーハ17表面で反射されるか、又
は、吸光体部で吸収されるかを反射レーザ光受光器4゜
ウェーハ有無判定装[21で判別することによシテーブ
ル19上のウェーI・有無判定が行われる。
First, before determining the presence or absence of a wafer on the table, make sure that the wafer placement position on the table is at a predetermined position, and that the light absorber grave is on the traveling axis of the laser beam emitted from the laser oscillation 1i20. Table 19. The table 19 is controlled to an appropriate position by detecting the slit of the slitted disk device which rotates integrally with the drive shaft using the 7-point sensor 6, and appropriately rotating the drive device using the table position control device 124. Thereafter, whether the laser beam emitted from the laser oscillator is reflected by the surface of the wafer 17 or absorbed by the light absorber portion is determined by the reflected laser beam receiver 4° and the wafer presence/absence determination device [21]. The presence/absence of way I on the storage table 19 is determined.

このようなウェーハ有無判定テーブル位置制御装置では
、次のような欠点−があった。
Such a wafer presence/absence determination table position control device has the following drawbacks.

(1)処理が終了又は進行したクエーノ・の表面状態は
鏡面状態でなくなシレーザ光が乱反射するようになるた
め、反射レーザ光受光器での反射レーザ光の受光量が不
均一となり、したがって、ウェーハ有無判定装置でのウ
ェー/S有無の判定が適正に行えない0 (2)高周波出力電源からの高周波出力が高まると、こ
れによるノイズの影響を7オトセンサに内蔵されている
電気信号系が受け、テーブル位置制御装置でのテーブル
の位置制御が適正に行えなくなる。
(1) The surface state of Quano® after the treatment is completed or progressed is no longer a mirror state and the laser beam is reflected diffusely, so the amount of reflected laser light received by the reflected laser light receiver becomes uneven, and therefore, The wafer presence/absence judgment device cannot properly judge the presence or absence of a wafer/S. (2) When the high frequency output from the high frequency output power source increases, the electrical signal system built into the 7 Otosensor is affected by the noise caused by this. , the table position control device cannot properly control the table position.

なお、テーブル位置制御時に、高周波出力電源によるノ
イズの影響を受けないために、レーザ発振器から発せら
れるレーザ光を用いテーブルの位置制御を行っても良い
が、しかし、この場合は、更に1台レーザ発振器を設置
しなければならず装置価格が増大するといった欠点があ
った。
Note that when controlling the table position, the table position may be controlled using a laser beam emitted from a laser oscillator in order to avoid being affected by noise from the high-frequency output power source. However, in this case, one additional laser There was a drawback that an oscillator had to be installed, which increased the cost of the device.

本発明は、上記欠点の除去を目的としたもので、レーず
発振器が処理室並びにシールド室の外側でシールド室に
対向して設置され、レーザ発振器から発せられたレーず
光の進行軸上に、レーザ光部分屈折具と、シールド室に
穿設されたレーザ光通過孔と、駆動軸と一体回動可能に
、かつ、傾斜して取付けられたレーザ光反射臭とが列設
され、レーザ光部分屈折具で屈折した屈折レーザ光の進
行軸上に、固定電極板に穿設されたレーザ光通過孔と対
向して処m室の下部壁に設けられた屈折レーザ光通過路
と、腋屈折レーザ光通過路と対向してテーブルに穿設さ
れた屈折レーザ光通過孔と、固定電極板に穿設されたレ
ーザ光通過孔と、処理室の上部壁に設けられたレーザ光
通過路と、該レーザ光通過路と対向して外側に設けられ
、かつ、ウェーハ有無判定装置に接続された屈折レーザ
光受光器とが列設されると共に、駆動装置と接続された
テーブル位置制御装置に接続された反射レーダ光受光器
がレーザ光反射具で反射しシールド室に穿設されたレー
ザ光通過孔を通過した反射レーザ光の進行軸上に設けら
れ、1台のレーザ発振器から発せられたレーザ光を用い
クエーノ・の表面状態によらず適正にウェーハ有無判定
装置でテーブル上のウェーハの有無判定が行え、かつ、
高周波電源によるノイズの影響を受けることなく適正に
テーブル位置制御装置でテーブルの位置が行えるウェー
ハ有無判定テーブル位置制御装置を提供するものである
The present invention aims to eliminate the above-mentioned drawbacks, and has a laser oscillator installed outside the processing chamber and the shield chamber, facing the shield chamber, and on the traveling axis of the laser light emitted from the laser oscillator. , a laser beam partial refractor, a laser beam passage hole drilled in the shield chamber, and a laser beam reflection mirror mounted at an angle and rotatable integrally with the drive shaft are arranged in a row, and the laser beam On the propagation axis of the refracted laser beam refracted by the partial refractor, there is a refracted laser beam passage provided in the lower wall of the treatment chamber, facing the laser beam passage hole bored in the fixed electrode plate, and an axillary refractor. a refractive laser beam passage hole bored in the table facing the laser beam passage; a laser beam passage hole bored in the fixed electrode plate; a laser beam passage provided in the upper wall of the processing chamber; A refracting laser beam receiver is provided outside facing the laser beam passageway and connected to a wafer presence/absence determination device, and is connected to a table position control device connected to a drive device. A reflected radar light receiver is installed on the traveling axis of the reflected laser light that is reflected by the laser light reflector and passed through the laser light passage hole drilled in the shield chamber, and the laser light emitted from one laser oscillator is The presence/absence of a wafer on the table can be appropriately determined using the wafer presence/absence determination device regardless of the surface condition of the Quano.
The present invention provides a table position control device for determining the presence or absence of a wafer, which allows the table position control device to properly position the table without being affected by noise from a high frequency power source.

本発明の一実施例をjll!2図、によシ説明する。な
お、纂2図で、N1図と同一装置1部品等は同一符号で
示し説明を省略する。
An example of the present invention! This will be explained in Figure 2. In Fig. 2, parts of the device that are the same as those in Fig. N1 are indicated by the same reference numerals, and their explanations will be omitted.

第2図で、レーザ発振器りが処理室14並びにシールド
室13の外側でシールド室に対向して設置され、レーザ
発振善美から発せられたレーザ光の進行軸上に、固定電
極板16に設けられたレーザ光通過孔15と対向して処
理1i!14並びにシールド室13の外側に設けられた
し―ザ光部分屈折具、例えば、ハーフミラ−列と、シー
ルド室13の側壁に穿設されたレーザ光通過孔四と、駆
動軸化と一体回動可能に、かつ、傾斜して取付けられた
レーザ光反射具、例えば、ミラーIとが列設され、ハー
フミラ−路で屈折した屈折レーザ光の進行軸上に、固定
電極板16に穿設されたレーザ光通過孔ルと対向して処
理室14の下部壁に設けられた屈折レーザ光通過路、例
えば、屈折レーダ光通過孔Jと窓蔗と、これらと対向し
てテーブル19に穿設された屈折レーザ光通過孔部と、
固定電極板16に穿設されたレーダ光通過孔腸と、処理
室14の上部壁に設けられたレーザ光通過路、例えば、
レーザ光通過孔lOと窓11と、これらと対向して外側
に設けられ、かつ、ウェーハ有無判定装置4′に接続さ
れた屈折レーザ光受光器菖とが列設されると共に、駆動
装置校と接続されたテーブル位置制御装置冴′に接続さ
れた反射レーザ光受光器あがミt−aoで反射しシール
ド室13の側壁に穿設されレーザ光通過孔四を通過した
反射レーザ光の進行軸上に設けられている。
In FIG. 2, a laser oscillator is installed outside the processing chamber 14 and the shield chamber 13, facing the shield chamber, and is installed on a fixed electrode plate 16 on the traveling axis of the laser beam emitted from the laser oscillator Zenbi. Processing 1i! facing the laser beam passage hole 15! 14, a laser beam partial refractor provided outside the shield chamber 13, for example, a half mirror row, a laser beam passage hole 4 drilled in the side wall of the shield chamber 13, and a drive shaft that rotates integrally. A laser beam reflector, for example, a mirror I, which is installed at an angle and possible, is arranged in a row, and is bored in the fixed electrode plate 16 on the traveling axis of the refracted laser beam refracted by the half mirror path. A refraction laser beam passageway provided in the lower wall of the processing chamber 14 facing the laser beam passage hole J, for example, a refraction radar beam passage hole J and a window cover, and a refraction laser beam passageway bored in the table 19 facing these. a refracted laser beam passage hole;
A radar light passage hole formed in the fixed electrode plate 16 and a laser light passage provided in the upper wall of the processing chamber 14, for example,
A laser beam passage hole 1O, a window 11, and a refractive laser beam receiver iris provided on the outside facing these and connected to the wafer presence/absence determination device 4' are arranged in a row, and a driving device side and a The traveling axis of the reflected laser beam reflected by the reflected laser beam receiver Agami t-ao connected to the connected table position control device Sae' and passed through the laser beam passage hole 4 drilled in the side wall of the shield chamber 13. is placed above.

このようなウェーハ有無判定テーブル位置制御装置では
、テーブル上のウェーハの有無判定並びにテーブル位置
制御は次のように行われる。
In such a wafer presence/absence determination table position control device, determination of the presence or absence of a wafer on the table and table position control are performed as follows.

まず、テーブルの位置制御であるが、この場合は、レー
ザ発振@’l:)から発せられたレーザ光が部分的にハ
ーフミラ−列を通過しレーザ光通過孔四を通過してミ2
−30に入射される。ミラー(資)で反射した反射レー
ザ光はミラー園が傾斜して駆動軸正に取付けられている
ため、レーザ発振善美から発せられるレーザ光の進行軸
とはある角度をなし、レーザ光通過孔四を通過して反射
レーザ光受光器蕊に入射する。反射レーザ光受光器易の
受光面には左右に少なくとも2個の受光素子(図示省略
)が取付けられておシ、もし、各受光素子での反射レー
ザ光の受光量が異なる場合は、テーブル位置制御装置[
24’によル駆動装置認な各受光素子での反射レーザ光
の受光量が等しくなるまで回動させる0このようにして
テーブル19上のクエーノ1載置位置が所定の位置にな
るように、また、テーブル19に穿設された屈折レープ
光通過孔(とレーザ発振善美から発せられたレーず光が
部分的に〕・−7ミラー2Bにより屈折した屈折レーザ
光の進行軸とが一致するようにテーブル19の位置は適
正に制御される0 次に、テーブルm上のウェーハ17の有無の判定は、こ
の場合、テーブル19の位置制御が完了した後に、レー
ザ発振善美から発せられたレーザ光が部分的にハーフミ
ラ−誌によル屈折した屈折レーザ光が屈折レーザ光受光
器詞に入射されるか否かによシ行われる。つtシ、テー
ブルWのクエーノ1載置位置にウェーハ17が載置され
屈折レーザ光通過孔3!Iを轟いた状態では屈折レーザ
光は屈折レーザ光受光器菖に入射されないためウェーハ
有無判定装置4′でクエーハ17が有シとの判定が明示
され、逆に、テーブルWのウェーハ載置位置にクエーノ
・17が載置されていない場合は屈折レーザ光はレ−ザ
屈折光通過孔お、レーザ光通過孔す、レーザ光通過孔l
Oと窓11を通過し受光面暑こ少なくとも1個受光素子
(図示省略)が取付けられた屈折レーザ光受光器具に入
射されるためつ、  /%有無判定装5121’でウェ
ーノー17が無しとの判定が明示される。
First, the position of the table is controlled. In this case, the laser beam emitted from the laser oscillation @'l:) partially passes through the half-mirror row, passes through the laser beam passage hole 4, and passes through the laser beam passing hole 4.
-30. The reflected laser beam reflected by the mirror (equipment) is tilted and installed directly in front of the drive shaft, so the axis of travel of the laser beam emitted from the laser oscillation Zenbi forms a certain angle, and the laser beam passes through the four holes. The reflected laser beam passes through and enters the receiver. At least two light-receiving elements (not shown) are installed on the left and right sides of the light-receiving surface of the reflected laser beam receiver. If the amount of reflected laser light received by each light-receiving element is different, the table position Control device[
24' rotate the drive device until the amount of reflected laser light received by each light receiving element becomes equal. In this way, the Quaeno 1 is placed at a predetermined position on the table 19. In addition, the refracted laser beam passage hole drilled in the table 19 (and the laser beam emitted from the laser oscillation Zenbi partially) is made so that the traveling axis of the refracted laser beam refracted by the -7 mirror 2B coincides with the In this case, the position of the table 19 is properly controlled.Next, the presence or absence of the wafer 17 on the table m is determined by determining whether the laser beam emitted from the laser oscillator Zenbi is This is done depending on whether or not the refracted laser beam partially refracted by the half mirror is incident on the refracted laser beam receiver. When the wafer is placed and emitting through the refracted laser beam passage hole 3!I, the refracted laser beam does not enter the refracted laser beam receiver irises. If the Quaeno-17 is not placed at the wafer placement position on the table W, the refracted laser beam will pass through the laser refracted beam passage hole, the laser beam passage hole, and the laser beam passage hole L.
Since the light passing through the light receiving surface and the window 11 enters the refracted laser light receiving device equipped with at least one light receiving element (not shown), the /% presence/absence determination device 5121' determines that there is no Waeno 17. Judgment is made clear.

本実施例のように、レーザ発振器から発せられハーフミ
ラ−を部分的に通過したレーザ光をテーブルと一体で回
動するミラーで反射させた反射レーザ光の反射レーザ光
受光器への入射角度によりテーブルの位fVテーブル位
置制御装置で制御し、レーザ発振器から発せられたレー
ザ光をノ1−フミラーで部分的に屈折させた屈折レーザ
光の屈折レーザ光受光器への入射有無によシテーブル上
のウェーハの有無をウェーノー有無判定装置で判定する
ようにし苑場合は、1台のレーザ発振器か−ら発せられ
たレーザ光を用いて反射レーザ光の反射レーザ光受光器
への入手角度が高周波電源によるノイズの影響を受けな
いためテーブルの位置制御な適正に行うことができ、か
つ、レーザ光のウェー71表面での反射光を用いないた
めウェー71面状態によらずテーブル上のウェーハの有
無判定を適正に行うことができる。
As in this embodiment, a laser beam emitted from a laser oscillator and partially passed through a half mirror is reflected by a mirror that rotates integrally with the table, and the angle of incidence of the reflected laser beam on the reflected laser beam receiver is The position on the table is controlled by the fV table position control device, and the position on the table is determined by whether or not the refracted laser beam, which is the laser beam emitted from the laser oscillator partially refracted by the nof mirror, is incident on the refracted laser beam receiver. If the presence or absence of a wafer is determined by a wafer presence/absence determination device, a laser beam emitted from one laser oscillator is used, and the angle at which the reflected laser beam reaches the reflected laser beam receiver is determined by a high-frequency power source. Since it is not affected by noise, it is possible to properly control the position of the table, and since it does not use the reflected light of the laser beam on the surface of the wafer 71, it is possible to determine the presence or absence of a wafer on the table regardless of the state of the surface of the wafer 71. It can be done properly.

本発明は、以上説明したように、半導体製造装置に適用
され、レーザ発振器から発せられるレーず光によ)テー
ブル上のウェーハの有無判定をウェーハ有無判定装置で
行い並びにテーブルの位置制御をテーブル位置制御装置
で行うウェーハ有無判定テーブル位置制御装置において
、レーザ発振器が処理室並びにシールド室の外側でシー
ルド室に対向して設置され、レーザ発振器から発せられ
るレーザ光の進行軸上に、レーザ光部分屈折具と、シー
ルド室に穿設されたレーザ光通過孔と、駆動軸と一体回
動可能に、かつ、傾斜して取付けられたレーザ光反射具
とが列設され、レーザ光部分屈折具で屈折した屈折レー
ザ光の進行軸上に、固定電極板に穿設されたレーザ光通
過孔と対向して処理室の下部壁に設けられた屈折レーザ
光通過路と、該屈折レーザ光通過路と対向してテーブル
に穿設された屈折レーザ光通過孔と、固定電極板に穿設
されたレーザ光通過孔と、処理室の上部壁に設けられた
レーザ光通過路と、蚊レーザ光通過路と対向して外側に
設けられ、かつ、ウェーハ有無判定装置が接続された屈
折レーザ光受光器とが列設されると共に、駆動装置と接
続されたテーブル位置制御装置に接続された反射レーザ
光受光器がレーザ光反射具で反射しシールド室に穿設さ
れたレーザ光通過孔を通過した反射レーザ光の進行軸に
設けられておシ、テーブル上のウェーハの有無判定を屈
折レーザ光の屈折レーザ光受光器への入射有無によシ行
い、テーブルの位置制御し反射レーザ光の反射レーザ光
受光器への入射角度にょシ行うようにしたので、ウェー
ハの表面状態によらずテーブル上のウェーハの有無判定
を適正に行うことができ、かつ、高周波出力電源による
ノイズの影響を受けずにテーブルの位置制御を適正に行
うことができるという効果がある。また、レーザ発振器
は1台設置するのみで十分であるので装置価格の増大を
抑制できる効果もある。
As described above, the present invention is applied to semiconductor manufacturing equipment, in which the presence or absence of a wafer on a table is determined by a wafer presence determination device (using laser light emitted from a laser oscillator), and the position of the table is controlled by a wafer presence determination device. In a wafer presence/absence determination table position control device performed by a control device, a laser oscillator is installed outside the processing chamber and the shield chamber facing the shield chamber, and the laser beam is partially refracted on the traveling axis of the laser beam emitted from the laser oscillator. A laser beam passing hole drilled in the shield chamber, and a laser beam reflector that can rotate integrally with the drive shaft and are mounted at an angle are arranged in a row, and the laser beam is refracted by the laser beam partial refractor. A refracted laser beam passage is provided on the lower wall of the processing chamber, facing the laser beam passage hole formed in the fixed electrode plate, on the traveling axis of the refracted laser beam, and a refracted laser beam passage is provided opposite to the refracted laser beam passage. A refracted laser beam passage hole drilled in the table, a laser beam passage hole drilled in the fixed electrode plate, a laser beam passage path provided in the upper wall of the processing chamber, and a mosquito laser beam passage hole. A refracting laser beam receiver is provided facing outside and connected to a wafer presence/absence determining device, and a reflective laser beam receiver is connected to a table position control device connected to a driving device. The refracted laser beam is provided on the axis of travel of the reflected laser beam that is reflected by a laser beam reflector and passed through a laser beam passage hole bored in the shield chamber. By controlling the position of the table and adjusting the angle of incidence of the reflected laser beam onto the receiver, the presence or absence of a wafer on the table can be determined regardless of the surface condition of the wafer. This has the advantage that the determination can be made properly and the position of the table can be controlled properly without being affected by noise from the high frequency output power source. Furthermore, since it is sufficient to install only one laser oscillator, there is also the effect of suppressing an increase in the cost of the device.

【図面の簡単な説明】[Brief explanation of the drawing]

w41図は、従来のウェーハ有無判定テーブル位置制御
装Mを説明するもので、従来のウエーノ・有無判定テー
ブル位置制御装置が適用され元手導体製造装置の断面図
、第2図は、本発明の一実施例を説明するもので、本発
明−こよるウエーノ1有無判定テーブル位置制御装置が
適用された半導体製造装置の断面図である。
Figure w41 is for explaining a conventional wafer presence/absence determination table position control device M, and FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus to which a Ueno 1 presence/absence determination table position control device according to the present invention is applied, illustrating one embodiment.

Claims (1)

【特許請求の範囲】[Claims] 1、 上部壁にレーザ光通過路が設けられ下部壁に駆動
装置を内設したシールド室が具設された処理室に、該処
理室の上部壁に設けられたレーザ光通過路と対向する位
置にレーザ光通過孔が穿設された固定電極板と上下方向
に対向して内設され、かつ、駆動装置と駆動軸を介して
回動可能に連結された電極板であるテーブルにウェーハ
を載置し処理する半導体製造装置に適用され、レーザ発
振器から発せられるレーザ光によりテーブル上のウェー
ハの有無判定をクエーハ有無判定装置で行い、かつテー
ブルの位置制御をテーブル位置制御装置で行うウェーハ
有無判定テーブル位置制御装置において、前記レーザ発
振器が前記処理室並びに前記シールド室の外側でシール
ド室に対向して設置され、レーザ発振器から発せられた
レーザ光の進行軸上に、レーザ光部分屈折臭と、シール
ド室に穿設されたレーザ光通過孔と、前記駆動軸と一体
回動可能に、かつ、傾斜して取付けられたレーザ光反射
具とが列設され、レーザ光部分屈折臭で屈折した屈折レ
ーザ光の進行軸上に、前記固定電極板に穿設された前記
レーザ光通過孔と対向して処理室の下部壁に設けられた
屈折レーザ光通過路と、該屈折レーザ光通過路と対向し
て前記テーブルに穿設された屈折レーザ光通過孔と、固
定電極板に穿設されたレーザ光通過孔と、処理室の上部
壁に設けられた前記レーザ光通過路と、該レーザ光通過
路と対向して外側に設けられ、がっ、前記ウェーハ有無
判定装置に接続された屈折レーザ光受光器とが列設され
ると共に、前記駆動装置と接続された前記テーブル位置
制御装置に接続された反射レーザ光受光器がレーザ光反
射具で反射しシールド室に穿設されたレーザ光通−過孔
を通過した反射レーザ光の進行軸上に設けられたことを
特徴とするクエーハ有無判定テーブル位置制御装置。
1. In a processing chamber equipped with a shield chamber in which a laser beam passage is provided in the upper wall and a drive device is installed in the lower wall, a position opposite to the laser beam passage provided in the upper wall of the processing chamber. The wafer is placed on a table, which is an electrode plate that is vertically opposed to a fixed electrode plate in which a laser beam passage hole is bored, and that is rotatably connected to a drive device via a drive shaft. A wafer presence/absence judgment table that is applied to semiconductor manufacturing equipment that processes on-board processing, uses a laser beam emitted from a laser oscillator to determine the presence or absence of a wafer on the table using a quafer presence/absence judgment device, and uses a table position control device to control the position of the table. In the position control device, the laser oscillator is installed outside the processing chamber and the shield chamber to face the shield chamber, and on the traveling axis of the laser beam emitted from the laser oscillator, there is a laser beam partially refracted odor and a shield. A laser beam passing hole drilled in the chamber and a laser beam reflector that is rotatable integrally with the drive shaft and attached at an angle are arranged in a row, and a refracting laser that is partially refracted by the laser beam is refracted by the odor. A refracted laser beam passage provided on the lower wall of the processing chamber opposite to the laser beam passage hole formed in the fixed electrode plate on the propagation axis of the light; a refracted laser beam passage hole formed in the table, a laser beam passage hole formed in the fixed electrode plate, the laser beam passage provided in the upper wall of the processing chamber, and the laser beam passage hole. and a refracting laser beam receiver provided outside facing and connected to the wafer presence/absence determination device, and connected to the table position control device connected to the drive device. A Quafer presence/absence determination table position characterized in that a reflected laser beam receiver is provided on the traveling axis of the reflected laser beam reflected by a laser beam reflector and passed through a laser beam passage hole drilled in a shield chamber. Control device.
JP17718981A 1981-11-06 1981-11-06 Table position controller detecting existence of wafer Granted JPS5879734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17718981A JPS5879734A (en) 1981-11-06 1981-11-06 Table position controller detecting existence of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17718981A JPS5879734A (en) 1981-11-06 1981-11-06 Table position controller detecting existence of wafer

Publications (2)

Publication Number Publication Date
JPS5879734A true JPS5879734A (en) 1983-05-13
JPS6122464B2 JPS6122464B2 (en) 1986-05-31

Family

ID=16026729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17718981A Granted JPS5879734A (en) 1981-11-06 1981-11-06 Table position controller detecting existence of wafer

Country Status (1)

Country Link
JP (1) JPS5879734A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114723A1 (en) * 2004-05-21 2005-12-01 Mattson Thermal Products Gmbh Determining the position of a semiconductor substrate on a rotation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114723A1 (en) * 2004-05-21 2005-12-01 Mattson Thermal Products Gmbh Determining the position of a semiconductor substrate on a rotation device
JP2007538391A (en) * 2004-05-21 2007-12-27 マットソン サーマル プロダクツ ゲゼルシャフト ミット ベシュレンクテル ハフツング Position detection of semiconductor substrates on rotating devices
KR101143383B1 (en) 2004-05-21 2012-05-22 맷슨 써멀 프로덕츠 게엠베하 Determining the position of a semiconductor substrate on a rotation device

Also Published As

Publication number Publication date
JPS6122464B2 (en) 1986-05-31

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