JPS5873237A - Logical circuit - Google Patents

Logical circuit

Info

Publication number
JPS5873237A
JPS5873237A JP56171682A JP17168281A JPS5873237A JP S5873237 A JPS5873237 A JP S5873237A JP 56171682 A JP56171682 A JP 56171682A JP 17168281 A JP17168281 A JP 17168281A JP S5873237 A JPS5873237 A JP S5873237A
Authority
JP
Japan
Prior art keywords
transistor
current
state
resistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56171682A
Other languages
Japanese (ja)
Inventor
Masaaki Kanda
神田 正明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56171682A priority Critical patent/JPS5873237A/en
Publication of JPS5873237A publication Critical patent/JPS5873237A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/0823Multistate logic
    • H03K19/0826Multistate logic one of the states being the high impedance or floating state

Landscapes

  • Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)

Abstract

PURPOSE:To reduce power consumption and to speed up a titled circuit, by connecting a parallel circuit of a resistor and a capacitor or a diode, between a collector of a current driving transistor (TR) and a base of an off buffer TR. CONSTITUTION:In a TTL tri-state logical circuit, a parallel circuit consisting of a capacitor 21 and a resistor 20 or of a Schottky diode and a resistor is connected between a collector of a current drive TR7 and a base of an off buffer TR9. Thus, when the TR7 is switched off from on or inversly, since the current of interruption and conduction is increased, the switching speed of the TR9 can be quickened. Further, the circuit current when a tristate control input electrode 4 is 0 level is reduced, allowing to decrease the power consumption.

Description

【発明の詳細な説明】 本発明はトランジスタ・トランジスタ・ロジ。[Detailed description of the invention] The present invention is transistor transistor logic.

り(Transistor、 Transistor、
 Logic (以下T T Lと略記する))系の論
理1gl路で特に3ステ一ト論理回路に関する。
(Transistor, Transistor,
Logic (hereinafter abbreviated as TTL) type logic circuit, and particularly relates to a three-state logic circuit.

一般に’i” ’l’ L糸の3ステ一ト論理回路の出
力祉入力の−via−eの状態に応じて、低レベル、筒
レベル又は鍋インピーダンスのいずれか1つの状態にの
み切り快わる0 3ステートのナンド(NANi))U路に於いて、3ス
テート制御入力電極に所定レベル以上の血圧が印加され
ている場合、入力電極にFir定レベル以上の電圧を印
加すると尋通駆動亀tAcが出力トランジスタに供給さ
れ導通状態となる。−カオフバッファトランジスタは遮
断駆動され、出力1極Fi’o“レベルになる。又、逆
に所定レベル身重の電圧が入力電極に印加されると出力
トランジスタは辿晧状態となり、オフバッファトランジ
スタが導通状態となる為出力電極は116レベルになる
。3ステート制御入力電極に所定レベル以下の入力電圧
が印加されると出力トランジスタ及びオフバッファトラ
ンジスタは共に遮断駆動され、出力電極#i、高インピ
ーダンス状態になる。
In general, the output of a 3-state logic circuit with 'i', 'l' and L threads only switches to one of the following states: low level, tube level, or pan impedance, depending on the state of the inputs -via and e. 0 In the 3-state NAN (NANi) U path, when blood pressure above a predetermined level is applied to the 3-state control input electrode, when a voltage above the Fir constant level is applied to the input electrode, the interstitial drive mechanism tAc is supplied to the output transistor, making it conductive.-The cut-off buffer transistor is driven to cut off, and the output becomes the one-pole Fi'o level. Conversely, when a voltage of a predetermined level is applied to the input electrode, the output transistor goes into a low state, and the off-buffer transistor becomes conductive, so that the output electrode goes to level 116. When an input voltage below a predetermined level is applied to the 3-state control input electrode, both the output transistor and the off-buffer transistor are driven to be cut off, and the output electrode #i enters a high impedance state.

一般に一理(ロ)路は、電力消費が小さく、かつ尚速度
のスイッチング動作か可能であることが望ましい。
In general, it is desirable for a straight path to have low power consumption and still be able to perform high-speed switching operations.

@1図は従来の’l”1’ L糸3ステート論理回路の
一例ケ示す(ロ)路接続図で、被数個の入力電極1及び
2にシ1.トキーダイオード12及び11のカソードが
それぞれ接続され、アノードは共に電流駆動トランジス
タ70ペースに接続されている。
Figure @1 is a circuit connection diagram showing an example of a conventional 'l''1' L thread 3-state logic circuit, in which the cathodes of the input electrodes 1 and 2 are and their anodes are both connected to a current drive transistor 70 pace.

ターイオード12及び11と抵抗15によす入力ゲート
回路が構成されている。電流駆動トランジスタ7のエミ
、りは出力トランジスタ8のベースに接続され、出力ト
ランジスタ8のエミ、りは基準電位点に接続されている
。電流駆動トランジスタ7のコレクタはオフバッファト
ランジスタ9のベースに接続され、オフバッファトラン
ジスタ9のエミッタはオフバッファトランジスタ10の
ベースに又オフバッファトランジスタ10のエミッタハ
出力トランジスタ8のコレクタと共に出力電極3に嵌絖
されている。電流駆動トランジスタのベース文びコレク
タと電源電極50間にはそれぞれ負荷抵抗15及び16
が接続され、オフバッファトランジスタ9及び10のコ
レクタと電源電&5の間には抵抗19が接続されている
。父、電流駆動トランジスタ7及びオフバッファトラン
ジスタ9のエミッタはでれそれ抵抗17及び18を介し
て接続されている。さらに電流駆動トランジスタ70ベ
ース及びオフバッファトランジスタ9のベースはそれぞ
れショットキーダイオード13及び14を弁して3ステ
ート制御入力’kk4に接続されている。この(ロ)路
の動作は次の通りである。
An input gate circuit is composed of third diodes 12 and 11 and a resistor 15. The emitter of the current drive transistor 7 is connected to the base of the output transistor 8, and the emitter of the output transistor 8 is connected to a reference potential point. The collector of the current drive transistor 7 is connected to the base of the off-buffer transistor 9, the emitter of the off-buffer transistor 9 is connected to the base of the off-buffer transistor 10, and the emitter of the off-buffer transistor 10 is connected to the output electrode 3 together with the collector of the output transistor 8. has been done. Load resistors 15 and 16 are connected between the base and collector of the current drive transistor and the power supply electrode 50, respectively.
A resistor 19 is connected between the collectors of off-buffer transistors 9 and 10 and power supply voltage &5. The emitters of the current drive transistor 7 and the off-buffer transistor 9 are connected via resistors 17 and 18, respectively. Furthermore, the base of current drive transistor 70 and the base of off-buffer transistor 9 are connected to tri-state control input 'kk4 via Schottky diodes 13 and 14, respectively. The operation of this (b) path is as follows.

3ステート制(至)入力1jL極4に高レベルか印加さ
れた状態に於いて複数個の入力電極1及び2の全てに所
定レベル(約1.2 V )以上の電圧が印加されると
抵抗15の電流は電流駆動トランジスタ70ペースに流
れ、該トランジスタを導通駆動する。
3-state system (up to) Input 1jL When a voltage higher than a predetermined level (approximately 1.2 V) is applied to all input electrodes 1 and 2 while a high level is applied to pole 4, the resistance A current of 15 flows through current drive transistor 70, driving it conductive.

電流駆動トランジスタ7のエミ、り%1M1(ベース電
流士コレクタ電流)は出力トランジスタ8ケ碑f11駆
動すると共に抵抗17に分流する。−力、万フパッファ
トランジスタ9及び10は8m駆動される。従って出力
−、極3は低レベル(”0’レベル)となる。
The emitter of the current drive transistor 7 (base current collector current) drives the eight output transistors f11 and is shunted to the resistor 17. - power, the puffer transistors 9 and 10 are driven by 8m. Therefore, the output -, pole 3 becomes a low level ("0" level).

逆に1 (1m以上の任意の入力電極にn[足レベル以
下の電圧が印加されると抵抗15の寛ηLはシtryト
キータイオードを通って入力電極より峰出し電流電動ト
ランジスタ7はベース電流がなくなり遮断状態となる。
On the contrary, when a voltage below the n level is applied to any input electrode with a distance of 1 m or more, the resistor 15's resistance ηL passes through the try key diode, and the current peaks out from the input electrode.The electric transistor 7 has a base current. It goes into a shut-off state.

この状態に於いてはもはや電流電動トランジスタ7から
供給される一流はなく出力トランジスタ8は辿断状態と
なる。電流部製トランジスタ7がm断状態となりコレク
タ電位が抵抗]6により上昇するとオフバッファトラン
ジスタ90ベースに電流が供給され、オフバッファトラ
ンジスタ9は導通状態となる。これと同時にオフバッフ
ァトランジスタ10が導通し、出力電極3VC&絖され
ている外部負荷に電流を供給する。従って出力電極3の
電位は上昇し正論理に於いて11ルベルとなる。
In this state, there is no longer any current supplied from the current motor transistor 7, and the output transistor 8 is in a disconnected state. When the transistor 7 made of the current section is turned off and the collector potential is increased by the resistor 6, a current is supplied to the base of the off-buffer transistor 90, and the off-buffer transistor 9 becomes conductive. At the same time, the off-buffer transistor 10 becomes conductive and supplies current to the output electrode 3VC and the connected external load. Therefore, the potential of the output electrode 3 rises to 11 levels in positive logic.

次にオフバッファトランジスタ9及び10が番通し出力
′WL極3に11ルベルが現われている状態に於いて3
ステート制御入力電極4に所定レベル(約0.8 V 
)以下の一1圧が印加されると抵抗16を流れる電流は
ダイオード14を通じて入力電極4より流出しオフバッ
ファトランジスタ90ペース電流がなくなるので、オフ
バッファトランジスタ9及び10は連断状態となる。こ
の時、出力トランジスタ8は鯉断状転であシ、出力′−
&3は間インピーダンス状態すなわチ11ルベルでも1
0ルベルでもない@3の状態(3ステート)となる。
Next, the off-buffer transistors 9 and 10 are connected to the serial output '3 in the state where 11 levels appear at the WL pole 3.
A predetermined level (approximately 0.8 V) is applied to the state control input electrode 4.
) When the following voltage is applied, the current flowing through the resistor 16 flows out from the input electrode 4 through the diode 14, and the off-buffer transistor 90 pace current disappears, so the off-buffer transistors 9 and 10 are disconnected. At this time, the output transistor 8 is not inverted, and the output '-
&3 is the impedance state, that is, 1 even at 11 level.
It becomes @3 state (3 state) which is not 0 level.

次に出力トランジスタ8が4通しオフバッファトランジ
スタ9及び10が連断し出力電極が10ルベル状態に於
いて、3ステート匍」伽入力IL極4に所定レベル以下
の電圧が印加ちれると抵抗15を流れる一流はダイオー
ド13を流れ、電流駆動トランジスタ7のベースを流は
なくなるので該トランジスタは迅1i1’r シs出力
トランジスタ8も遮艮「状態となる。又、抵抗16を流
れる一流はタイオード14を流れ、オフバッファトラン
ジスタ9のベースに供給される電流はないのでオフバッ
ファトランジスタ9及びlOも連断状態となる。よって
出力電極3は尚インピーダンス状態すなわち第3の状態
(3ステート)となる。
Next, when the output transistor 8 is turned off and the buffer transistors 9 and 10 are connected and the output electrode is in the 10 level state, when a voltage below a predetermined level is applied to the input IL pole 4, the resistor 15 The current flowing through the resistor 16 flows through the diode 13, and the current flowing through the base of the current drive transistor 7 disappears, so that the transistor is in a state where the output transistor 8 is also blocked. Since there is no current supplied to the base of off-buffer transistor 9, off-buffer transistor 9 and lO are also in a disconnected state.Therefore, output electrode 3 is still in an impedance state, that is, a third state (3-state).

すなわち、3ステート匍」御入力′kL極4に所冗ンベ
ル(約4.5V)以上の電圧が印加されると本回路は2
個の入力ゲー)1−有する2人力NANDゲート回路と
なり、3ステート制−入力電極唾に所定レベル(約0.
8V)以下の電圧が印加されると入力ブートの状態に関
係なく出力電極3は高インピータンス状態(3ステート
)となる。この従来の3ステ一ト論理回路に於いてFi
3ステート制御入力電極がIgルベルの時、ダイオード
14を通りて流れる電流の大きさは抵抗16の抵抗値に
より決まる。一般に抵抗16は論理回路のスイッチング
スピードを速める為、小さい値のものが使用され抵抗1
6を流れる電流は大きい。従って3ステ一ト制御人力電
槓4がIQIレベルの時数電極から流出する一゛流が大
きい為、消費電力が増大する。
In other words, when a voltage higher than 3-state voltage (approximately 4.5 V) is applied to the 3-state input 'kL pole 4, this circuit will
It is a two-man powered NAND gate circuit with 1 input gate and 3 state system, and a predetermined level (approximately 0.
When a voltage of 8V or lower is applied, the output electrode 3 enters a high impedance state (3-state) regardless of the input boot state. In this conventional three-state logic circuit, Fi
When the three-state control input electrode is at Ig level, the magnitude of the current flowing through diode 14 is determined by the resistance value of resistor 16. Generally, resistor 16 is used with a small value to increase the switching speed of the logic circuit.
The current flowing through 6 is large. Therefore, since the current flowing out from the time electrode of the three-state control human powered power ram 4 is large, the power consumption increases.

父、該電極に接続される駆動回路は大容量のものが必要
となる欠点がある。
However, there is a drawback that the drive circuit connected to the electrode needs to have a large capacity.

本発明の目的は、消費電力が小さくかつ高速度スイッチ
ングの可能なTTL系3ステート論珈回路を提供するこ
とである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a TTL 3-state logic circuit with low power consumption and high-speed switching.

本発明の特i!l[II′i抵抗と靜電容童を電流駆動
トランジスタのコレクタとオフバッファトランジスタの
ペース間に接続し、11流駆動トランジスタが、24通
状態から逅紡状態又はその逆に切り侠わる時に縫#躯動
及び導通駆wJ′に流會堀大し、オフバッファトランジ
スタのスイッチングスピードthめ、3ステ一ト割飾入
力電極がIOルベル時の1g回回路波流低減し消費電力
の小さい高速匿@恩1路を侍るものである。
Features of the present invention! l [II'i resistor and a silent conductor are connected between the collector of the current drive transistor and the pace of the off-buffer transistor, and when the 11 current drive transistor switches from the 24-way state to the 24-way state or vice versa, the sewing # A large flow hole is provided for the rotation and conduction drive wJ', and the switching speed of the off-buffer transistor is increased, and the 3-stage divided input electrode reduces the circuit wave current by 1g times at the IO level, resulting in high-speed switching with low power consumption. It is the one that attends On 1st Path.

以下実1!cU例に従い1凹を用いて本発明會評細に祝
明する0第2図は本発明の一実施例の回路接続図で抵抗
20とコンデンサ21の並夕1[gJ路が、電流駆動ト
ランジスタ7のコレクタとオフバッファトランジスタ9
0ベース間に接続されている。回路の動作は次の通りで
ある。
Below is the truth 1! Figure 2 is a circuit connection diagram of an embodiment of the present invention, in which a resistor 20 and a capacitor 21 are arranged in parallel. 7 collector and off-buffer transistor 9
Connected between 0 bases. The operation of the circuit is as follows.

3ステート制動入力11極4が11ルベルの場合人力亀
1ikl及び2に11ルベルの電圧か印加されるとtf
L駆動トランジスタ7及び出力トランジスタ8が導通す
る。オフバッファトランジスタ9のペース電力はコンデ
ンサ21及び抵抗20を辿って急速に放tされ、その結
果、オフバッファトランジスタ9及びlOが逢断状態と
なり出力tiL極3の皇位は急速に10ルベルに切り換
わる。逆に入力’*mi又は2のいずれかが10@レベ
ルになると電流駆動トランジスタフ及び出力トランジス
タ8rih断状態となりオフバッファトランジスタ90
ベース亀荷はコンデンサ21及び抵抗20會通って急速
に充電されその結果、オフノ(ツファトランジスタ9及
びlOが導通状態となり出力電極は急速にIllレベル
に切り換わる0 次に3ステート制御入力電極4に106レベルが印加さ
れるとオフバッファトランジスタ90ペース電位は該1
に極の00−レベルとダイオード14の順方向電圧の和
の値迄下げられ、オフノ(ツファトランジスタ9及び1
0は遮断状態となり出力電極3tよ高インピーダンス状
態となる。なお、3ステート制御入力電極4より流出す
る電流は抵抗16と抵抗20の直列接続回路により制限
され小さい愉でめる0 この様にコンデンサと抵抗をオフ/<ツ7アトランジス
タ9のペースと電流駆動トランジ、x、pt。
If 3-state braking input 11 pole 4 is 11 levels, when a voltage of 11 lbs is applied to human power tortoise 1ikl and 2, tf
The L drive transistor 7 and the output transistor 8 become conductive. The pace power of the off-buffer transistor 9 is rapidly released through the capacitor 21 and the resistor 20, and as a result, the off-buffer transistor 9 and lO are turned off, and the output of the output tiL pole 3 is rapidly switched to 10 levels. . Conversely, when either input '*mi or 2 reaches the 10@ level, the current drive transistor and output transistor 8rih are turned off, and the off-buffer transistor 90 is turned off.
The base capacitor is rapidly charged through the capacitor 21 and the resistor 20, and as a result, the off-no(transistors 9 and 10 become conductive, and the output electrode rapidly switches to the Ill level.) Next, the 3-state control input electrode 4 When a level of 106 is applied to 1, the off-buffer transistor 90 pace potential becomes 1.
is lowered to the sum of the 00-level of the pole and the forward voltage of the diode 14, and the off-no(Zuffa transistors 9 and 1)
0 becomes a cut-off state and becomes a higher impedance state than the output electrode 3t. Note that the current flowing out from the 3-state control input electrode 4 is limited by the series connection circuit of the resistor 16 and the resistor 20, and can be kept small.In this way, the capacitor and resistor are turned off. Drive transition, x, pt.

コレクタ間に接続することによりオフノ(ツファトラン
ジスタの急速な導通及び遮断駆動がa]能となり、關理
回路の高速度スイッチング動作かOJ能である。なお、
111L流躯動トランジスタ7か寺通秋悪から赳断状態
又はその逆方向に切り挾わる時にのみコンデンサ21に
%流が流れ、定16状転に於いては抵抗20で電流が制
限式れる為、不f′)′r望な消費電力の増大はない。
By connecting between the collectors, it is possible to quickly conduct and cut off the transistor (a), and it is possible to perform high-speed switching operation or OJ function of the industrial circuit.
% current flows to the capacitor 21 only when the 111L current rolling transistor 7 is in the disconnected state or in the opposite direction due to Teramichi's fall, and in the constant 16 state, the current is limited by the resistor 20. , f')'r There is no undesirable increase in power consumption.

第3図は本発明による調理回路の他の実施例でコンデン
サ21の替りに7.、トキーメイオード22の接合容重
により電流駆動トランクスタフか遮断する時、オフバッ
ファトランジスタ9を急速に導通態動し、逆に電流駆動
トランジスタ7か4通する時、ダイオード22の1一方
向の=h仇によりオフバッファトランジスタ9會急速に
速断駆動する。これにより高速度論理回路が侍られる0
以上述べた様に本発明によれはrl’L糸の3ステ一ト
@理回路に於いてオフバッフ7)ランジスタ會* @す
る為に抵抗とコンデンサ又はダイオードの並列回路を接
続することにより消貿′嶋力か小さく高速度な調理回路
が得られ効果は太さい。
FIG. 3 shows another embodiment of the cooking circuit according to the invention, in which the capacitor 21 is replaced by 7. , when the current-driven trunk stub is cut off by the junction capacitance of the keyhole diode 22, the off-buffer transistor 9 is rapidly turned on, and conversely, when the current-driven transistor 7 or 4 is turned on, the diode 22 in one direction = The off-buffer transistors 9 are rapidly driven by the enemy. This allows high-speed logic circuits to be used.
As described above, according to the present invention, the 3 stages of the rl'L thread @ logic circuit can be turned off by connecting a parallel circuit of a resistor and a capacitor or diode. ``It is possible to obtain a small and high-speed cooking circuit, and the effect is great.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の3ステ一ト論理回路を示す回路接続図、
第2図及びrJ43図はそれぞれ本発明3スアート論理
回路の一央り例及び他の実施例を示す回路接続図である
。 1.2・・・・・・入力′に極、3・・・・・・出力%
極、4・・・・・・3ステ一ト制御人力JwL極、5・
・・・・・(源篭極、6・・・・・・基準電位点、7,
8,9.10・・・・・・トランジスタ、11,12,
13,14.22・・・・・・シ、ットヤータ“イオー
ド% 15,16,17,18,19゜20・・・・・
・抵抗、21・・、−1・・・コンデンサ。 第1図 A 第2図 4
Figure 1 is a circuit connection diagram showing a conventional three-state logic circuit.
FIG. 2 and FIG. rJ43 are circuit connection diagrams showing an integrated example and other embodiments of the three smart logic circuits of the present invention, respectively. 1.2...Pole at input', 3...Output%
Pole, 4...3-step control human power JwL Pole, 5.
...... (source pole, 6... reference potential point, 7,
8,9.10...transistor, 11,12,
13, 14.22... shi, toyata "iod% 15, 16, 17, 18, 19゜20...
・Resistance, 21..., -1...Capacitor. Figure 1A Figure 24

Claims (1)

【特許請求の範囲】[Claims] 入力ゲート回路、出力トランジスタ、出力トランジスタ
に電流を供給する電流部側トランジスタ及びオフバッフ
ァトランジスタを具儒してなる3ステート論−回路に於
いて、電流駆動トランジスタのコレクタとオフバッファ
トランジスタのベース間に接続された抵抗とコンデンサ
又はダイオードの並列回路を有することを%徴とする論
理回路。
In a three-state logic circuit consisting of an input gate circuit, an output transistor, a current side transistor that supplies current to the output transistor, and an off-buffer transistor, there is a connection between the collector of the current drive transistor and the base of the off-buffer transistor. A logic circuit characterized by having a parallel circuit of connected resistors and capacitors or diodes.
JP56171682A 1981-10-27 1981-10-27 Logical circuit Pending JPS5873237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56171682A JPS5873237A (en) 1981-10-27 1981-10-27 Logical circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56171682A JPS5873237A (en) 1981-10-27 1981-10-27 Logical circuit

Publications (1)

Publication Number Publication Date
JPS5873237A true JPS5873237A (en) 1983-05-02

Family

ID=15927737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171682A Pending JPS5873237A (en) 1981-10-27 1981-10-27 Logical circuit

Country Status (1)

Country Link
JP (1) JPS5873237A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6591141B2 (en) 2000-11-15 2003-07-08 Ceragem International, Inc. Mat for hot compress and acupressure mounted with new type hyperthermo-radiative apparatus
US6606520B1 (en) 2000-11-15 2003-08-12 Ceragem International, Inc. Roller type hyperthermo-radiative apparatus for a mat for hot compress and acupressure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6591141B2 (en) 2000-11-15 2003-07-08 Ceragem International, Inc. Mat for hot compress and acupressure mounted with new type hyperthermo-radiative apparatus
US6606520B1 (en) 2000-11-15 2003-08-12 Ceragem International, Inc. Roller type hyperthermo-radiative apparatus for a mat for hot compress and acupressure

Similar Documents

Publication Publication Date Title
US4804868A (en) BiMOS logical circuit
EP0196113B1 (en) Tri-state buffer circuit
KR900000487B1 (en) Logic gate circuit
US3728560A (en) Bistable multivibrator circuit
US4728821A (en) Source follower current mode logic cells
US4612458A (en) Merged PMOS/bipolar logic circuits
JPS5873237A (en) Logical circuit
US4943741A (en) ECL/CML emitter follower current switch circuit
EP0069853B1 (en) A ttl logic gate
US4839540A (en) Tri-state output circuit
US4485311A (en) Drive circuit for at least one light-emitting diode
JPH01300714A (en) Load current controlled type logic circuit
US5572152A (en) Logic circuit with the function of controlling discharge current on pull-down and emitter coupled logic circuit
KR910005588B1 (en) Logic circuit
US4626711A (en) Exclusive or gate circuit
US5157283A (en) Tree decoder having two bit partitioning
US5341042A (en) Low voltage, cascoded NTL based BiCMOS circuit
US4423357A (en) Switchable precision current source
JP2544826B2 (en) Semiconductor integrated circuit
JPH0738582B2 (en) BiCMOS TTL level drive circuit
US4782248A (en) STL exclusive-or buffer
CA1250351A (en) Low power off-chip driver circuit
US5059826A (en) Voltage threshold generator for use in diode load emitter coupled logic circuits
US4007384A (en) Noninverting current-mode logic gate
EP0476341B1 (en) A BICMOS logic circuit with a CML output