JPS5864271A - Silicon nitride sintered body - Google Patents

Silicon nitride sintered body

Info

Publication number
JPS5864271A
JPS5864271A JP56163274A JP16327481A JPS5864271A JP S5864271 A JPS5864271 A JP S5864271A JP 56163274 A JP56163274 A JP 56163274A JP 16327481 A JP16327481 A JP 16327481A JP S5864271 A JPS5864271 A JP S5864271A
Authority
JP
Japan
Prior art keywords
powder
sintered body
silicon nitride
sintering
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56163274A
Other languages
Japanese (ja)
Inventor
西本 達也
栄治 上條
正明 本多
樋口 松夫
塚田 博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56163274A priority Critical patent/JPS5864271A/en
Publication of JPS5864271A publication Critical patent/JPS5864271A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 仁の発明は高温強度が高く、高密度を有する非酸化物、
すなわち窒化物セラミック焼結体KIIIIするもので
ある。
[Detailed description of the invention] Jin's invention is a non-oxide material with high high temperature strength and high density.
That is, it is a nitride ceramic sintered body KIII.

最近、セラミックス材料特に耐熱性材料としてのセラミ
ックスの一発が盛んに行われており、なかでも高温にお
いて安定な耐熱性物質である共有結合性化合物、特に窒
化叶い素(SilN4)、炭化けい* (SIC)が非
常にすぐれた材料であることが知られている。
Recently, ceramic materials, particularly ceramics, have been actively used as heat-resistant materials, and among them, covalent compounds that are heat-resistant substances that are stable at high temperatures, especially silicon nitride (SilN4), silicon carbide* ( SIC) is known to be an excellent material.

一般にセラミックスは、原料セラミックス粉末を成形焼
結して使用されるものであるが、Si、N、。
Ceramics are generally used by molding and sintering raw ceramic powder, such as Si, N, etc.

SjCなどの場合は、一般の酸化物セラミックスと異な
塾、−焼結性物質であるため、単独組成たとえばSi、
N4粉末のみを焼結しても緻密な焼結体を得ることFi
困難である。
In the case of SjC, etc., since it is a sinterable material different from general oxide ceramics, it has a single composition such as Si,
Even if only N4 powder is sintered, a dense sintered body can be obtained.Fi
Have difficulty.

この*j6s輸N4@末の場合などK FiMgO,A
jlO@ 。
In the case of this *j6s imported N4 @ end, K FiMgO,A
jlO@.

YIO@ * Ce01 # BeOなどの酸化物粉末
を焼結助剤として添加して焼結することが行われている
Sintering is performed by adding oxide powder such as YIO@*Ce01#BeO as a sintering aid.

焼結助剤を1えた粉末を使用して通常行われているプレ
ス成形後、真空あるいは常圧で加tlk、焼結する方法
は、焼結コストが低く工業的KF@いることができる。
The commonly used method of press forming using powder containing a sintering aid and then applying TLK and sintering in vacuum or normal pressure has low sintering costs and can be used on an industrial scale.

またSi、N、の場合、焼結しても孔はそのまま残存す
るのでこの方法で相対密度97%程度の焼結体を得るこ
とができる。
In the case of Si and N, pores remain as they are even after sintering, so a sintered body with a relative density of about 97% can be obtained by this method.

これに対して、高温下で加圧しながら焼結するホットプ
レス法によれば、より緻密な焼結体を得ることができる
On the other hand, according to the hot press method in which sintering is performed under pressure at high temperature, a denser sintered body can be obtained.

さらに焼結助剤の混合割合を減少し、あるいは焼結助剤
を添加せずに高圧ガス雰囲気中で焼結したり、爆発成型
などで粉末に瞬間的に高圧を加えて粉砕したのち、焼結
するなどの方fflが試みられているが、伺れの方法も
焼結コストが高く、また高温強度の低下現象が伐る欠点
があり、工業的な方法として成功していない。
Furthermore, the mixing ratio of the sintering aid may be reduced, or the powder may be sintered in a high-pressure gas atmosphere without the addition of a sintering aid, or the powder may be pulverized by instantaneously applying high pressure using explosive molding, etc., and then sintered. FFL methods have been attempted, such as sintering, but this method also has the drawbacks of high sintering costs and a reduction in high-temperature strength, and has not been successful as an industrial method.

ところで従来から非酸化物セフミックス焼結体の出発原
料である5j−4粉末の製造法は、シリコンま九はシリ
カ粉末と嶽素粉末との混合物をN3ガス気流中て180
0〜1700℃で加熱し、窒化物Vt800−1900
℃の湿度範囲で気相反応させて得る方法などがある。
By the way, the conventional method for producing 5J-4 powder, which is the starting material for non-oxide Cefmix sintered bodies, is to heat a mixture of silica powder and diagonal powder to 180% in a N3 gas stream.
Heating at 0-1700℃, nitride Vt800-1900
There is a method of obtaining it by performing a gas phase reaction in the humidity range of ℃.

この何れの方法により製造されたSi@N4粉宋もその
11焼結成形体の製造席料として使用することかできる
The Si@N4 powder produced by any of these methods can also be used as a manufacturing material for the sintered compact.

このようにして製造されるS輸N、焼結体は、耐熱衝撃
性が高く、かつ靭性のあるセラミックスとして自動車用
血ンジンやタービンエンジンへの応用が検討されている
し、ま九種々の治工具類への応用もすでに行われている
The S-N sintered body produced in this way is being considered for application to automobile engines and turbine engines as a ceramic with high thermal shock resistance and toughness, and is also being used in various treatments. Applications to tools are already underway.

516N4焼結体の別の特徴は、該焼結体が反応性に乏
しいことである。このため5ilN4焼結体と異種セラ
ミックスや金属との接合が非常に困難であるという欠点
があった。
Another feature of the 516N4 sintered body is that it has poor reactivity. For this reason, there is a drawback that it is extremely difficult to join the 5ilN4 sintered body to different types of ceramics or metals.

本発明者らは、Sj@N4焼結体におする上記の欠点を
解消すべく検討の結果、この発8AK至ったものである
The inventors of the present invention have studied to solve the above-mentioned drawbacks of the Sj@N4 sintered body, and as a result, they have arrived at this development.

即ちこの発明は、Si@N4粉末にAt!0.とyto
、粉末の焼結助剤を1〜20重量第と、V、W、Mo。
That is, this invention provides At! 0. and yto
, powdered sintering aid in an amount of 1 to 20% by weight, V, W, Mo.

Ti、Yなどの金属の珪化物粉末の少くとも1種以上t
−5〜40重量%を加えた混合粉末をN、ガスまた#:
tN!ガスを含む非酸化性雰囲気中で焼結することによ
って他のセラミックス中金属とのロク付は接合可能な窒
化けい未焼結体が得られることを見出したものである。
At least one kind of metal silicide powder such as Ti, Y, etc.
- Mixed powder with 5 to 40% by weight added to N, gas or #:
tN! It has been discovered that by sintering in a non-oxidizing atmosphere containing gas, it is possible to obtain a silicon nitride unsintered body that can be bonded to metals in other ceramics.

一般K St、N4を用いてSi@N4焼結体を得るに
は、N、ガス中、1気圧、1700℃以上で焼結するこ
とか知られてお・す、この際5ilN4紛禾にん60.
It is known that in order to obtain a Si@N4 sintered body using general K St and N4, sintering is performed at 1700°C or higher in N gas at 1 atm. 60.
.

MgO,FeOなどの酸化物を焼結助剤として添加する
ことも知られている。しかし、このような焼結で#′1
SisN4が分解するため、これを防ぐためにAmBN
粉末にSi、N、粉末を混合バッキングして焼結するこ
とも行れている。
It is also known to add oxides such as MgO and FeO as sintering aids. However, with such sintering, #'1
Since SisN4 decomposes, AmBN is used to prevent this.
It has also been possible to sinter the powder by backing a mixture of Si, N, and powder.

ところがこのようにして得られる5isN4焼結体は高
強度、高密度の性質は有するものの接合性に欠けている
However, although the 5isN4 sintered body thus obtained has properties of high strength and high density, it lacks bondability.

るためにSi、N、粉末にAZ=O,とY、O,粉末の
焼結助剤と、さらKV、W、Mo、T1.Yなどの金属
の珪化物を加え、この混合粉末をN2カスまたけN!ガ
スを含む非酸化性雰囲気中で焼結するものである。
Si, N, powder, AZ=O, Y, O, powder sintering aid, KV, W, Mo, T1. Add a metal silicide such as Y, and sprinkle this mixed powder with N2 and N! It is sintered in a non-oxidizing atmosphere containing gas.

このような焼結によるとsNRガスまたFiN2ガスを
含む雰囲気中で金属珪化物が分解し、焼結体表−K t
j Me 、 Wなどの金I11層か出現し、これらの
金属層は通常のロク付けあるいは金j4固溶体を形成し
うるために一紋の金jIK接合法と同様の方法でSi、
N、焼結体と他のセラミックスや金属との接合がisJ
屹になるのである。
According to such sintering, the metal silicide is decomposed in an atmosphere containing sNR gas or FiN2 gas, and the surface of the sintered body - K t
Gold I11 layers such as Me, W, etc. appear, and these metal layers can be bonded to Si, Si, etc. using a method similar to the single gold bonding method to form a gold j4 solid solution.
N, the bonding of the sintered body with other ceramics or metals is
It becomes a leopard.

この発明で得た焼結体O他の特&は、板状または棒状等
の素材より所要の形状に切出し、接合したい部分のみを
高湿のN8ガスまたけN、ガスを含む雰−気中で処理す
ることによって新しい切V#向のメタライジング処理が
容易に可能なこ、とである。
The sintered body obtained by this invention is cut into a desired shape from a material such as a plate or rod, and only the parts to be joined are placed in an atmosphere containing high humidity N8 gas. By processing with , it is possible to easily perform a new metallizing process in the direction of cut V#.

上記のように焼結体の接合性を向上させるのに有用な金
属珪化物の使用量としてF15〜4o1tm*が好しい
。その理由は、必要とする接合強度にもよるが、6重量
優以下では金属珪化物が分解して焼結体の表面層に付着
する金挑量が不足し、また40重量秦以上を用いると、
5ilN4焼結体としての特徴が失なわれるためである
As mentioned above, the amount of metal silicide useful for improving the bondability of the sintered body is preferably F15 to 4o1tm*. The reason for this depends on the required bonding strength, but if less than 6% by weight, the metal silicide decomposes and the amount of gold adhering to the surface layer of the sintered body is insufficient, and if more than 40% by weight is used, ,
This is because the characteristics of the 5ilN4 sintered body are lost.

全綱珪化物としては、原子比の異なる化合物が多数存在
するが、それらのなかでもこの発明ではMo6S輸−M
o@Si * w、sil、WSiz、 CoSi 、
 Co51ne NiSi 。
There are many compounds with different atomic ratios as whole-line silicides, but among them, Mo6S-M
o@Si * w, sil, WSiz, CoSi,
Co51ne NiSi.

など″が特に有効である。その理由は、焼結によって焼
結体*曲に析出する金属層としてこれらの全綱が金鴫ロ
ク材との濡れ性が良いためである。
etc.'' are particularly effective. The reason for this is that all of these wires have good wettability with the metal layer as a metal layer deposited on the sintered body by sintering.

また焼結助剤としてのAt、O,とY2O5粉末の使用
量#−11〜20重量優が適当で6る。
In addition, the amount of At, O, and Y2O5 powders used as sintering aids is preferably 11 to 20% by weight.

これけ11ifi51以下では焼結時に充分な焼結密度
が得られず、また20重ilt%以上ではSi3N2の
粒界層がガラス層化して高温強度が低下するためである
This is because if it is less than 11 ifi51, sufficient sintered density cannot be obtained during sintering, and if it is more than 20 weight ilt%, the grain boundary layer of Si3N2 becomes a glass layer and the high temperature strength decreases.

そしてこのAt、0.とY2O3の使用比率にht、o
虐:Y、0.=8:1乃至1:8が適当であって、それ
以外でFi得られる焼結体の耐熱性が低トして好ましく
ない。
And this At, 0. h and o for the usage ratio of Y2O3 and Y2O3.
Aggression: Y, 0. A ratio of 8:1 to 1:8 is suitable; other values are not preferred because the heat resistance of the sintered body obtained with Fi will be low.

また、この発明における焼結条件としては1650〜1
850℃、0.5〜6時間が適当である。
In addition, the sintering conditions in this invention are 1650 to 1
A suitable time is 850°C for 0.5 to 6 hours.

かくして轡られるこの発明の接合性を向上したSi、N
4焼結体h%表iii層の金属が焼結体内部に深く坤も
れているために、真空A肴や通常のメタライジング法と
比較すると、微振で強度の高い接合層を得ることができ
るのである。
Thus, Si, N with improved bonding properties of the present invention
4 Sintered compact h% Because the metal in the surface III layer is deeply leaked into the sintered compact, it is possible to obtain a high-strength bonding layer with slight vibration compared to vacuum A-plating or normal metallizing method. It can be done.

なおこの発11における焼結時の雰囲気としては、N、
、NH,などの窒素供給源となるガス体のほかにこれら
とCO,H!41のガスとの混合ガスであっても差支え
々い。
The atmosphere during sintering in this process 11 was N,
In addition to gases that serve as nitrogen supply sources such as , NH, and CO, H! There is no problem even if it is a mixed gas with No. 41 gas.

次にこの発#11実施例により詳細に説明する。Next, this will be explained in detail using Example #11.

実施例 5tarckit製、)I−1gradeのSi@N4
粉末に対して第1表に示す量の焼結助剤および金鵬珪化
物粉末を配合し、これを10時周鉦弐ボールミル攪拌を
行った。
Example 5 Made by tarckit, ) I-1 grade Si@N4
A sintering aid and Jinpeng silicide powder were added to the powder in the amounts shown in Table 1, and the mixture was stirred in a ball mill for 10 hours.

得られ九スラリーを乾燥後、これに有機粘結剤としてス
テアリン鹸5寿を加え、10X7X40■の試験片を2
 tlcdで型押しして作成した。
After drying the resulting slurry, add stearin soap as an organic binder to it, and add 2 test pieces of 10 x 7 x 40 cm to it.
It was created by stamping with TLCD.

これを公知のバッキング材に入れN2ガス雰囲気中にて
1760℃、1時間の焼結を行った。
This was placed in a known backing material and sintered at 1760° C. for 1 hour in an N2 gas atmosphere.

得られ九焼結体の特性を調べたところ第1表に示す結果
が得られた。
When the properties of the nine sintered bodies obtained were investigated, the results shown in Table 1 were obtained.

なお接合状急のテストは角棒状のSK材5×5−の先端
に、同サイズのこの発明で得たS i 8N4焼結体を
銀ロク付け[、、この試験片のSK材側を保持し、焼結
体側に蓚Iをかけて接合性のIL否を常温で判定した。
In addition, for the joint test, a Si 8N4 sintered body of the same size obtained in this invention was attached to the tip of a square bar-shaped SK material 5 × 5- with a silver lock [, the SK material side of this test piece was held]. Then, the sintered body was coated with Illustrator to determine whether or not the bondability was IL-induced at room temperature.

この結果、接合性の良好なもの#′i銀ロクの内部で懐
壊しているのに対し、劣るものFiSi、N4焼結体の
表向ではがれていることが認められた。
As a result, it was found that the #'i silver sintered body with good bonding properties was broken internally, whereas the FiSi and N4 sintered bodies with poor bonding properties were peeled off on the surface.

これtjsi、N4焼結体表曲の金属層との結合の強度
の差によるものと推定される。
This is presumed to be due to the difference in bonding strength between the surface of the N4 sintered body and the metal layer.

第   1   表 ; ― ■ 膠 なお上記実施例は何れも常圧焼結について記載したが、
この発明は常圧焼結のみに限定されるものではなく、ホ
ットプレス法によって得た焼結体の場合でも全く同じ効
果があることけa1*した。
Table 1; ― ■ Glue The above examples were all about pressureless sintering, but
The present invention is not limited to pressureless sintering, and the same effect can be obtained even in the case of a sintered body obtained by hot pressing.

Claims (3)

【特許請求の範囲】[Claims] (1) (a)  kl、OlとY、0.の粉末を1〜
20重量%(b)  V、W、 Me 、 Ti 、 
Yなどの金属の珪化物粉末の少くとも1種以上を5〜4
0重aS (Q 残部が窒化けい素粉末 の混(至)末を用いて焼結したことを特徴とする窒化け
い素焼給体。
(1) (a) kl, Ol and Y, 0. 1~ powder of
20% by weight (b) V, W, Me, Ti,
5 to 4 at least one kind of metal silicide powder such as Y
0 heavy aS (Q) A silicon nitride burner characterized in that the remainder is sintered using a mixture of silicon nitride powder.
(2)窒化けい素粉末は、その粒子径が0.1〜5μで
該粉末中の他の金属不純物総量が1%であることを特徴
とする特許請求の範囲第1g4記載の窒化けい素焼給体
(2) The silicon nitride powder has a particle size of 0.1 to 5μ and a total amount of other metal impurities in the powder is 1%. body.
(3)混合粉末ヲN!ガス雰囲気中で焼結したこと全特
徴とする特許請求の範囲第1項記載む窒化けい素焼給体
。 /4)q金粉末を当ガスを含む雰囲気中で焼結し牛′と
を特徴とする特許請求の範囲第1現記、・ 窒化けい素
焼給体。
(3) Mixed powder woN! A silicon nitride sintering body as claimed in claim 1, characterized in that it is sintered in a gas atmosphere. /4) A silicon nitride sintering body, characterized in that the gold powder is sintered in an atmosphere containing the gas.
JP56163274A 1981-10-12 1981-10-12 Silicon nitride sintered body Pending JPS5864271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163274A JPS5864271A (en) 1981-10-12 1981-10-12 Silicon nitride sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163274A JPS5864271A (en) 1981-10-12 1981-10-12 Silicon nitride sintered body

Publications (1)

Publication Number Publication Date
JPS5864271A true JPS5864271A (en) 1983-04-16

Family

ID=15770689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163274A Pending JPS5864271A (en) 1981-10-12 1981-10-12 Silicon nitride sintered body

Country Status (1)

Country Link
JP (1) JPS5864271A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028193A (en) * 1983-07-25 1985-02-13 株式会社日本自動車部品総合研究所 Ceramic heater
EP0133289A2 (en) * 1983-07-29 1985-02-20 Kabushiki Kaisha Toshiba Wear-resistant member and manufacturing method thereof
JPS62278169A (en) * 1986-05-26 1987-12-03 東芝タンガロイ株式会社 Ceramic sintered body parts and manufacture
US5178647A (en) * 1983-07-29 1993-01-12 Kabushiki Kaisha Toshiba Wear-resistant member

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028193A (en) * 1983-07-25 1985-02-13 株式会社日本自動車部品総合研究所 Ceramic heater
JPH0410717B2 (en) * 1983-07-25 1992-02-26
EP0133289A2 (en) * 1983-07-29 1985-02-20 Kabushiki Kaisha Toshiba Wear-resistant member and manufacturing method thereof
EP0133289A3 (en) * 1983-07-29 1985-06-05 Kabushiki Kaisha Toshiba Wear-resistant member and manufacturing method thereof
US5178647A (en) * 1983-07-29 1993-01-12 Kabushiki Kaisha Toshiba Wear-resistant member
JPS62278169A (en) * 1986-05-26 1987-12-03 東芝タンガロイ株式会社 Ceramic sintered body parts and manufacture
JPH0568427B2 (en) * 1986-05-26 1993-09-28 Toshiba Tungaloy Co Ltd

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