JPS5863943A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS5863943A JPS5863943A JP16370381A JP16370381A JPS5863943A JP S5863943 A JPS5863943 A JP S5863943A JP 16370381 A JP16370381 A JP 16370381A JP 16370381 A JP16370381 A JP 16370381A JP S5863943 A JPS5863943 A JP S5863943A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photoconductive layer
- vapor deposition
- oxygen
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は・−子写真感光体 %1Cはくり返し使用して
も疲労が生じなilを子写真感光体に関する0
電子写真感光体は所定の特性を得る丸めとめるいは適用
される電子写真プロセスに応じて檀々の構成をとるが、
基本的に紘電磁波の入射VCより生じ九゛1子正孔対O
電荷を電界のもとて光導電層中をドリフトさせる点では
1欽しており電子写真感光体の性能線党導電鳩に大きく
依存する。光導電層の表向に絶縁層を有する感光体にお
いては絶縁層上に静電像を形成するものでこのために帯
電によシ絶綴層と光導電層との界面に電荷が注入される
ことが必要である。例えげこの様な電子写真プロセスと
して1次帯電−am光、画像霧光と同時若しくは^像露
光後にAC除W若しくは1次帯電と逆極性の帯電および
全面側光からなるプロセスが挙げられる。光導電層がB
e、 SeT・の如きP麺半導体で構成されている場合
には1次帯電を負のコロナ放電によって行い支持体より
正の電荷を光導電層に注入させ、光導″鴫層に印加され
ている電界によりその電荷を絶縁層と光導電層の界l1
li4c移動させている。支持体よシミ荷注入が困難な
場合には負のコロナ放電の直前着しくは同時に光を一様
に感光体の支持側から照射する事により絶縁層と光導電
層との界面に通蟲量の正電#全存在させるようにする事
ができる0このように光照射を支持体側からするとき鉱
、支持体が、ネtガクス、光透過性の樹脂フィルムなど
の光透過性のものである必要がある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a child photographic photoreceptor that does not cause fatigue even when used repeatedly. Various compositions are taken depending on the electrophotographic process applied,
Basically, a 9゛1 electron-hole pair O is generated from the incident VC of the electromagnetic wave.
It is unique in that charges are caused to drift in the photoconductive layer under an electric field, and is largely dependent on the performance curve of the electrophotographic photoreceptor. In a photoreceptor that has an insulating layer on the surface of the photoconductive layer, an electrostatic image is formed on the insulating layer, and for this purpose, charges are injected into the interface between the insulating layer and the photoconductive layer due to electrification. It is necessary. Examples of such an electrophotographic process include a process consisting of primary charging-am light, AC removal at the same time as image fog light or after image exposure, or charging with a polarity opposite to that of the primary charge, and full-surface side light. The photoconductive layer is B
e. When the photoconductive layer is composed of a P-noodle semiconductor such as SeT, primary charging is performed by negative corona discharge, and positive charges are injected from the support into the photoconductive layer, which is then applied to the photoconductive layer. The electric field transfers the charge to the field l1 between the insulating layer and the photoconductive layer.
I am moving li4c. If it is difficult to inject stains into the support, the amount of insects passing through the interface between the insulating layer and the photoconductive layer can be reduced by uniformly irradiating light from the support side of the photoreceptor immediately before or simultaneously with negative corona discharge. When irradiating light from the support side in this way, the support is made of a light-transmissive material such as net gas or a light-transparent resin film. There is a need.
“別の光導電層の表面に絶縁層を有しない感光体におい
ては、初めの帯電において電荷を注入させる必要はなく
、その代弐的なプロセスとしてP警手導体であれば1次
帝−を正のコロナ放電によって光導電層に電界を印加し
、画像A11oF。“For photoreceptors that do not have an insulating layer on the surface of another photoconductive layer, there is no need to inject charge during initial charging, and as an alternative process, if a P conductor is used, the first Applying an electric field to the photoconductive layer by positive corona discharge, image A11oF.
によシ生じた正の電荷を支持体側に移動させている。The positive charges generated by this process are transferred to the support side.
従来代表的な光導電層としてSsおよびAs 。Ss and As are conventionally typical photoconductive layers.
Te 、 ak、 、勢を含むSe含包倉真空蒸着して
形成される光導電層は一般に感度が高く機械的鎖板も優
れているが光導電層の特性としてまだ改善されるべき点
が指摘される。その1つはくり返し疲労である。即ちm
光体を短時間内にくり返し使用する場合、静電像の暗部
並びに明部の電位が初期に較べて小さくなりコントラス
トの低下がf1!察される。これはいわゆる感光体12
)[労現象として説明され、光導電層の電気的な欠陥の
ため、光導電層中に電荷がトラップされ、空間電荷とな
りこれがくシ返し使用する#1ど強調されるために残留
電位の増大、暗St位の低下を生じるものと推察される
。Photoconductive layers formed by vacuum evaporation in a Se-containing chamber containing Te, ak, and elements generally have high sensitivity and excellent mechanical chain plates, but it has been pointed out that the characteristics of the photoconductive layer still need to be improved. be done. One of them is repetitive fatigue. That is, m
When the light body is used repeatedly within a short period of time, the potentials of the dark and bright parts of the electrostatic image become smaller than the initial ones, and the contrast decreases f1! be noticed. This is the so-called photoreceptor 12
) [Explained as a labor phenomenon, due to electrical defects in the photoconductive layer, charges are trapped in the photoconductive layer and become space charges. It is presumed that this causes a decrease in the dark St position.
趙コントラストの静電像を再現性良く得る喪めにはこの
く9返し疲労を生じない光導電層を有する事は不可欠の
ことである。而して本発明は感光体のくり返し使用にお
いても上記のような疲労現象を呈さない感光体t−提供
する事を主たる目的とする。In order to obtain a high-contrast electrostatic image with good reproducibility, it is essential to have a photoconductive layer that does not cause fatigue. Therefore, the main object of the present invention is to provide a photoreceptor which does not exhibit the fatigue phenomenon described above even when the photoreceptor is used repeatedly.
本発明は、支持体上に酸Xを含むSe系光導電層を有す
る隠子写真感光体において、酸素の含有量が支持体と平
行な面では均一であるが支持体側から真面側へと連続的
に減少し、且つ、支持体側の#It素の含有量が100
ppm以上、真面側が20 ppm以下であることを
%徴とするものでるる〇
本発明に係る光導電層は不純物として酸素原子を含むこ
とで威光導電層における#l嵩原子の分布が支持体表面
に略々平行な面内では均一であり厚さ方向には不均一な
分布t−有し、酸素原子の含有蓋は層中央部よりも支持
体側に多く分布するものである。このようなa嵩會有S
s系光導電層を備え九本発明による感光体は従来のもの
に較べて電荷の移動性が良く正の電荷が光導電層中をド
リフトするlIA光導電層中でトラップされ残留電位や
暗部電位の低下の原因となる様な光導電層中の電気的な
欠陥を補償するために〈9返し疲労を生じない電子写真
特性を達成する事ができる。従って、高速コピー用感光
体として、例えば、感光体の同一部位が繰返し受ける電
子写真プロセスの間隔が2秒以下であるような高速;ビ
ーに特に有効である0また、電荷保持特性にも優れてい
る。なお、先導電層全体に含まれる酸素の含有量はao
ooppm以下、特には40001)P1m以下が好適
である。また、支持体側の鍼嵩含有量は、200 pp
m以上が特に好適である0
本宛−の電子写真感光体の蛾も代表的な構成例は81&
!!Qおよび、菖2図に示される。The present invention provides a cryptographic photoreceptor having an Se-based photoconductive layer containing acid Continuously decreases, and the content of #It element on the support side is 100
ppm or more and 20 ppm or less on the front side.The photoconductive layer according to the present invention contains oxygen atoms as impurities, so that the distribution of #l bulk atoms in the photoconductive layer is similar to that of the support. It has a uniform distribution in the plane approximately parallel to the surface, but non-uniform distribution in the thickness direction, and the oxygen atom-containing lid is more distributed on the support side than in the center of the layer. Having a large meeting like this
The photoreceptor according to the present invention, which is equipped with an S-based photoconductive layer, has better charge mobility than conventional ones, and positive charges are trapped in the IIA photoconductive layer that drifts in the photoconductive layer, reducing residual potential and dark potential. Electrophotographic properties without fatigue can be achieved by compensating for electrical defects in the photoconductive layer that may cause a decrease in photoresistance. Therefore, it is particularly effective as a photoreceptor for high-speed copying, for example, when the same part of the photoreceptor is repeatedly subjected to an electrophotographic process with an interval of 2 seconds or less.It also has excellent charge retention properties. There is. Note that the content of oxygen contained in the entire leading conductive layer is ao
It is preferably ooppm or less, particularly 40001)P1m or less. In addition, the acupuncture content on the support side is 200 pp
A typical example of the structure of an electrophotographic photoreceptor for which 0 m or more is particularly suitable is 81 &
! ! Q and Iris 2 are shown.
111図の感光体は支持体iS元導嶌層2から構成され
るもので第2WJの感光体は表面に絶縁層3を設けたも
のである0絶縁層3は光導電層が感じる光に対して透過
性である。The photoreceptor shown in Figure 111 is composed of a support iS and a conductive layer 2.The photoreceptor of the second WJ has an insulating layer 3 on its surface. It is transparent.
第3図の感光体は絶縁層3と光導電層、2との間に光導
電層2よル更に高感度な光導電層2′を設けたものであ
る。本発明において光導電層中に含有される#索は、支
持体側からの正孔電荷の注入を速やかにする作用をなし
さらに電荷が光導電層中をドリフトする際に光導電層中
にトラップされるような電気的な欠陥を補償する作用を
なす。In the photoreceptor shown in FIG. 3, a photoconductive layer 2' having a higher sensitivity than the photoconductive layer 2 is provided between the insulating layer 3 and the photoconductive layer 2. In the present invention, the # wires contained in the photoconductive layer act to quickly inject hole charges from the support side, and furthermore, when the charges drift in the photoconductive layer, they are trapped in the photoconductive layer. It acts to compensate for electrical defects such as
光導電層の膜厚としては適用される電子写真特性との関
係により適宜設定されるが通常5〜100μ好迩には1
0〜80μである。The thickness of the photoconductive layer is set appropriately depending on the electrophotographic characteristics to be applied, but it is usually 1 to 100μ for a thickness of 5 to 100μ.
It is 0 to 80μ.
又、光導′電層にはTe HAs 、Sb等の元素を含
有させたものも使用する事ができる。支持体としては、
例えば、AI 、 N1 、黄銅、 Cu 、 Agな
どの金属、41を性ガラス、ポリエステル、ポリエチレ
ン等の樹脂2紙、ガラス、セラミックスなどである。Further, a photoconductive layer containing elements such as Te HAs and Sb can also be used. As a support,
Examples include metals such as AI, N1, brass, Cu, and Ag, glass, resins such as polyester and polyethylene, paper, glass, and ceramics.
絶縁層は、普通には、樹脂から構成される。The insulating layer is usually made of resin.
その様な樹脂として有効なのは例えば、ポリエステル、
ポリパラキシリレン、ポリウレタン。Examples of effective resins include polyester,
Polyparaxylylene, polyurethane.
ポリカーボネート、ポリスチレン、などである◎JII
3図に示される高感度な光導電層は通用される電子写真
プロセスに応じて適宜選定され例えば、ZnO、CdS
、ポリビニルカルバゾールなどの各種材料が適用され
、特にSs系材料についていえば例えば8e−To 、
5s−8b 、 5e−Bi 、 5a−AI、など
各118e合金材料で形成される。Polycarbonate, polystyrene, etc. ◎JII
The highly sensitive photoconductive layer shown in Figure 3 is appropriately selected according to the commonly used electrophotographic process, and includes, for example, ZnO, CdS
, polyvinylcarbazole, and other materials are used. Particularly regarding Ss-based materials, for example, 8e-To,
It is made of 118e alloy materials such as 5s-8b, 5e-Bi, 5a-AI, etc.
また、この高感度な光導電層の厚さは、l〜15μ、特
には1〜5μの範囲が好適である。The thickness of this highly sensitive photoconductive layer is preferably in the range of 1 to 15 microns, particularly 1 to 5 microns.
実施例1
第4図に示す様に100 X 100 jJHDAj製
の支持体lが蒸着槽4内の所定位に設置される。支持体
1はこれを加熱する丸めのヒータ10よシ10M881
m離して固定部材5に固定される。Example 1 As shown in FIG. 4, a 100×100 jJHDAj support 1 is placed at a predetermined position in a vapor deposition tank 4. The support 1 is heated by a round heater 10M881.
They are fixed to the fixing member 5 with a distance of m.
次に石英製の蒸着ボート6 K#1* 5 n1neの
5et−充積する。蒸着ボート6の上にはタングステン
のスパイラルヒータ7を設ける。蒸着ボート6には酸素
を導入する丸めのステンレス製のパイプ12を設は蒸着
槽外に設けた酸素ボンベ1111Mする。Next, 5 ets of quartz vapor deposition boat 6 K#1*5 n1ne were filled. A tungsten spiral heater 7 is provided on the vapor deposition boat 6. The vapor deposition boat 6 is equipped with a round stainless steel pipe 12 for introducing oxygen into an oxygen cylinder 1111M provided outside the vapor deposition tank.
次に矢印11で示す橡に蒸着槽4内の空気を排気し真空
1を5 X 1G−’ torrにする。次にヒーll
Oを点火して支持体10温度を60℃に上昇させこの温
度に保つ。Next, the air in the deposition tank 4 is evacuated in the direction indicated by the arrow 11, and the vacuum 1 is set to 5 x 1 G-' torr. Next, heal
The temperature of the support 10 is raised to 60° C. by igniting O and kept at this temperature.
以下蒸着中の基板温度、蒸着速度および真空度の時間変
化を第5図を参照し乍ら説明する。Hereinafter, changes over time in substrate temperature, deposition rate, and degree of vacuum during deposition will be explained with reference to FIG. 5.
1着ボート6上のスパイラルヒータ7を点火し、蒸着ボ
ートt aoo℃に加熱し蒸着ボート内O8・′kll
I融する。蒸着ボー′ト内のSsが一様に熔融し7’t
Atlで酸素ボンベ13のパルプ14tM&蒸着槽内の
真空度が1.5 X 1O−4torr Kなる様に酸
素を導入し、その後シャッタを1Rで開き支持体上に蒸
着を開始する。115図に示す如く酸素の導入量を徐々
に1.tJR2らしてSsの蒸着終了時の2真流すII
cRを1111JINシて第5図に示す如く基板温度を
なだらかに上昇させS@o蒸着終了時が75℃になる様
に制御する。The spiral heater 7 on the first boat 6 is ignited, and the deposition boat is heated to taoo℃, and the temperature inside the deposition boat is O8・'kll.
I melt. The Ss in the deposition boat melts uniformly and takes 7't.
Atl, oxygen is introduced into the oxygen cylinder 13 so that the pulp is 14 tM and the degree of vacuum in the vapor deposition tank is 1.5 x 10-4 torr K, and then the shutter is opened at 1R to start vapor deposition on the support. As shown in Figure 115, the amount of oxygen introduced was gradually increased to 1. tJR2 and 2 true flows at the end of Ss deposition II
cR is set at 1111 JIN to gradually raise the substrate temperature as shown in FIG. 5, and the temperature is controlled so that it reaches 75° C. at the end of S@O vapor deposition.
蒸着ボート内のS・が殆んど無くなる点t1でスパイラ
ルヒータ7の電流を切りシャッター9′ic閉じて蒸着
を終了する。At a point t1 when S. in the deposition boat is almost gone, the current to the spiral heater 7 is cut off and the shutter 9'ic is closed to complete the deposition.
蒸着膜の膜厚は60μで6つ九〇この蒸着膜の一部を特
性測定にさしつかえのないようにはく離し、二次イオン
質量分析法で膜厚方向の酸素含有量を調べ九〇その結果
表面側から5μの位置では50p−であり、支持体側か
らLs(D位置では11000ppであった。The thickness of the vapor deposited film is 60μ, and 6 parts. It was 50p- at a position 5μ from the surface side, and 11000pp at Ls (D position) from the support side.
そして以下の様な方法にてく9返し特性の好個を行う良
。Then, the following method is used to obtain the desired characteristics.
感光体に電源電圧■6KVの正コロナ放電を行いその表
面電位をaoo v Vc帯電し直ちに感光体を一様に
全面照射し、更KACコロナ放電にて除電を行つ九〇
このプロセスを2 sec周期で100回〈9返し測定
を行っ友結釆M6WJの直線ムに示す如くl&i11目
から100−目までの全m照射後の表向電位に変化はな
く、殆んどOvでくシ返し疲労は認められなかった。A positive corona discharge with a power supply voltage of 6 KV is applied to the photoconductor, the surface potential is charged to aoo v Vc, the entire surface of the photoconductor is immediately irradiated uniformly, and the static electricity is further removed by KAC corona discharge.90This process is continued for 2 seconds. As shown in the straight line of M6WJ, there was no change in the surface potential after irradiation of all meters from 11th to 100th, and there was almost no fatigue due to repeating Ov. was not recognized.
巣にこの感光板の表面にポリウレタン樹脂を25μの厚
さに塗、布して更に次の固定奢行う良。The surface of the photosensitive plate was coated with polyurethane resin to a thickness of 25 μm, and then the next fixing process was carried out.
C:)6Kvの負コロナ放電を行ってその表面電位を(
1) 2000V K帯域し次に二次帯電として06K
Vの正コロナ放電を行って絶縁層減面を除電し次いで一
様に全一照射するとθgoovo表面電位を示し友。こ
の様なプロセスを4 s@e周期で繰ル返し固定を行っ
た結果116図の直線Bに示す如<11g1目から10
0−目までの全面露光後照射後の表面電位に変化はなく
〈9返し疲労現象は認められなかっ友。C:) A negative corona discharge of 6Kv is performed to reduce the surface potential to (
1) 2000V K band and then 06K as secondary charging
When a positive corona discharge of V is performed to eliminate static electricity from the insulating layer, and then the entire surface is irradiated uniformly, a θgoovo surface potential is obtained. As a result of repeating this process at a cycle of 4 s@e, as shown in the straight line B in Figure 116, <11g1 to 10
There was no change in the surface potential after irradiation after full-surface exposure up to the 0-th mark. (9) No fatigue phenomenon was observed.
参照例1
実施例1でのt、〜t1間の酸素を導入する事を行なわ
ない以外は実施例1と同一の工程で感光体を作成し九〇
この感光体に実施例1と同様に先ず■6KVの正コロナ
放11′に行って■600VK11F電し直ちに感光板
を全m*射し、j!にACコロナ放電にて除電を行った
。このプロセスを2 sec周期で100回くシ返し行
った結果jIG図の1纏Cに示す如くく9返し回数と共
にその表面電位が徐々に上昇し100回目では200V
Kまで上昇し、くり返し疲労現象を生じ九〇更にこの
感光体ON向にポリウレタン*mを25sの厚さに塗布
して更に次O固定を行った。06KV O負コロナ放・
颯を行うて、その表面を02000V K IF域し次
に二次帯電として■6KV O正コロナ放電を行って絶
縁層表面を除電し次いで一様に全面照射すると0750
VO表面電位を示した0この様なプロセスを2 s@e
周期でくり返し行っ友結釆第6図の111!IDK:示
す如くくり返し@数と共に全面照射後の表面電位が徐々
に低下し100回目のそれはθ650VでToD<り返
し疲労現象を生じ良。Reference Example 1 A photoconductor was prepared in the same process as in Example 1 except that the introduction of oxygen between t and t1 in Example 1 was not carried out. ■ Go to 6KV positive corona radiation 11', ■ 600VK11F, immediately irradiate the photosensitive plate all m*, and j! Static electricity was removed using AC corona discharge. As a result of repeating this process 100 times with a 2-sec period, the surface potential gradually increased with the number of repeats, and reached 200 V at the 100th repeat, as shown in Figure 1C of the IG diagram.
When the temperature increased to K, repeated fatigue phenomena occurred.Furthermore, polyurethane*m was applied to the ON side of the photoreceptor to a thickness of 25 seconds, and further O fixation was carried out. 06KV O negative corona release
The surface of the insulating layer is exposed to 02,000V K IF range, and then a 6KV O positive corona discharge is performed as a secondary charge to eliminate static electricity on the insulating layer surface.Then, the entire surface is irradiated uniformly to 0750V.
The VO surface potential showed 0 such a process at 2 s@e
111 in Figure 6 of the 6th diagram that goes repeatedly at regular intervals! IDK: As shown, the surface potential after the entire surface irradiation gradually decreases with the number of repetitions, and at the 100th time, ToD<repetition fatigue phenomenon occurs at θ650V.
このように実施例1および参照例1により本発明の電子
写真感光体は絶縁層を設けない感光体に適用するプロセ
スあるいは絶縁層を設は良悪光体に適用するプロセスに
も適用でき、極めてすぐれ九く9返し特性を示すことが
認められ九〇As described above, according to Example 1 and Reference Example 1, the electrophotographic photoreceptor of the present invention can be applied to a process that is applied to a photoreceptor without an insulating layer, or to a process that is applied to a photoreceptor with an insulating layer. It has been recognized that it exhibits excellent characteristics.
第1図、第2図および第3図は、それぞれ本発明による
感光体の1態様を示す断面図である0第4図は感光体の
製造に用いる蒸着装置の構成図である〇
第S図は光導電層を形成する場合の蒸着操作のグ27で
ある。
1116図は感光体o<D返し使用による表面電位の変
化を示すグラフである。
l・・・支持体、2・・・光導電層、3・・・絶縁層、
代JIへX aIm! 1□!IH5;第1貼綿
j1, 2, and 3 are cross-sectional views showing one embodiment of the photoreceptor according to the present invention, respectively.0 Figure 4 is a configuration diagram of a vapor deposition apparatus used for manufacturing the photoreceptor.0 Figure S 27 is a vapor deposition operation for forming a photoconductive layer. Figure 1116 is a graph showing changes in surface potential due to use of the photoreceptor o<D. l... Support, 2... Photoconductive layer, 3... Insulating layer,
XaIm to JI! 1□! IH5; 1st cotton paste j
Claims (1)
電子写真感光体において、繊素の含有量が支持体と平行
な面では均一でるるが支持体側から妖m@へと連続的に
減少し、且つ、支持体側0tIt嵩の含有量がloo
ppm以上、表向側が20ppm以下であることを特徴
とする電子写真感光体。1. In an electrophotographic photoreceptor having a Se-based leading W1 layer on a support, the cell content is uniform on the plane parallel to the support, but continuously from the support side to the side. and the content of 0tIt volume on the support side is loo
An electrophotographic photoreceptor characterized in that the content is at least ppm and at most 20 ppm on the front side.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16370381A JPS5863943A (en) | 1981-10-14 | 1981-10-14 | Electrophotographic receptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16370381A JPS5863943A (en) | 1981-10-14 | 1981-10-14 | Electrophotographic receptor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5863943A true JPS5863943A (en) | 1983-04-16 |
Family
ID=15779010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16370381A Pending JPS5863943A (en) | 1981-10-14 | 1981-10-14 | Electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5863943A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59126539A (en) * | 1983-01-11 | 1984-07-21 | Nippon Mining Co Ltd | Selenium vapor-deposited film used for electrophotographic sensitive body and its manufacture |
JPS60102643A (en) * | 1983-11-10 | 1985-06-06 | Nippon Mining Co Ltd | Vapor deposited selenium film for use in electrophotographic sensitive body and its manufacture |
JPS60102644A (en) * | 1983-11-10 | 1985-06-06 | Nippon Mining Co Ltd | Vapor deposited selenium film for use in electrophotographic sensitive body and its manufacture |
JPS60202445A (en) * | 1984-03-27 | 1985-10-12 | Mitsubishi Metal Corp | Selen material for sensitive body of electrophotographic device |
-
1981
- 1981-10-14 JP JP16370381A patent/JPS5863943A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59126539A (en) * | 1983-01-11 | 1984-07-21 | Nippon Mining Co Ltd | Selenium vapor-deposited film used for electrophotographic sensitive body and its manufacture |
JPS60102643A (en) * | 1983-11-10 | 1985-06-06 | Nippon Mining Co Ltd | Vapor deposited selenium film for use in electrophotographic sensitive body and its manufacture |
JPS60102644A (en) * | 1983-11-10 | 1985-06-06 | Nippon Mining Co Ltd | Vapor deposited selenium film for use in electrophotographic sensitive body and its manufacture |
JPS60202445A (en) * | 1984-03-27 | 1985-10-12 | Mitsubishi Metal Corp | Selen material for sensitive body of electrophotographic device |
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