JPS5853289A - Overcurrent protecting circuit - Google Patents

Overcurrent protecting circuit

Info

Publication number
JPS5853289A
JPS5853289A JP56151525A JP15152581A JPS5853289A JP S5853289 A JPS5853289 A JP S5853289A JP 56151525 A JP56151525 A JP 56151525A JP 15152581 A JP15152581 A JP 15152581A JP S5853289 A JPS5853289 A JP S5853289A
Authority
JP
Japan
Prior art keywords
resistor
current
circuit
semiconductor element
communication current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56151525A
Other languages
Japanese (ja)
Other versions
JPH0133068B2 (en
Inventor
Koichi Hagishima
萩島 功一
Takeo Koinuma
濃沼 健夫
Fumio Mano
真野 文雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56151525A priority Critical patent/JPS5853289A/en
Publication of JPS5853289A publication Critical patent/JPS5853289A/en
Publication of JPH0133068B2 publication Critical patent/JPH0133068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M19/00Current supply arrangements for telephone systems
    • H04M19/001Current supply source at the exchanger providing current to substations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00Adapting or protecting infrastructure or their operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Devices For Supply Of Signal Current (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To ensure the protection of an overcurrent with an extremely low cost, by setting a resistor which is fused with its own generation of heat in series to a semiconductor circuit that supplies a call current to a subscriber. CONSTITUTION:A resistor 2 and a semiconductor element 3 are connected in series to both ends of a power supply 1, and a call current is supplied to a subscriber line from a terminal 4. The voltage generated across the resistor 2 is led to a control circuit 5. The circuit 5 controls the equivalent resistance of the element 3 to keep the call current at a prescribed level. The resistor 2 is formed with a thin or thick film on the ceramic substrate of a large heat resistance and then fused with its own generation of heat if the call current increases by some reason.

Description

【発明の詳細な説明】 本発明は電話交換機に接続され、加入者に通話電流を供
給する通話電流供給回路に含まれる回路であって、通話
電流が異常に増大したときにこれを自動的に停止させる
回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention is a circuit connected to a telephone exchange and included in a telephone current supply circuit that supplies telephone current to subscribers, and which automatically controls the telephone current supply circuit when the telephone current increases abnormally. Regarding the circuit to be stopped.

通話電流供給回路に半導体が導入され、供給される通話
電流の流路に半導体素子、例えばトランジスタのコ1/
クタ・エミッタ回路が挿入され、この通話電流が所定の
値になるように、この半導体素子の等価抵抗値を制御す
るものが広く用いられるように々つだ。通話電流供給回
路は数多く設置する必要があるため、回路が簡単安価で
あることが必要であり、また実装スベ〜スが小さいこと
が望捷れる。半導体素子を用いた回路はこの要求によく
応えるものであるとともに、通話電流の制御が安定にか
つ任意の設定値で行われる優れた特長がある。
A semiconductor is introduced into the communication current supply circuit, and a semiconductor element, such as a transistor, is placed in the flow path of the supplied communication current.
In recent years, devices have come into wide use in which a converter-emitter circuit is inserted to control the equivalent resistance value of the semiconductor element so that the communication current reaches a predetermined value. Since it is necessary to install a large number of communication current supply circuits, it is necessary that the circuits be simple and inexpensive, and it is desirable that the mounting space be small. Circuits using semiconductor elements meet this demand well, and have the excellent feature of stably controlling the communication current at any set value.

しかし、何らかの原因でその制御機能が故障し、出力側
に短絡が生じると、過大電流が流れて危険になることが
ある。このため、通話電流供給回路の正負両側にこの種
の回路を挿入することが行われているが、数多くの中に
は々おその両側の回路が故障して、過大電流が流れるこ
とがある。これを防ぐためにさらに電流制限回路を付加
すること等は、技術的には可能であっても、装置を経済
化するうえから望ましいことではない。
However, if the control function malfunctions for some reason and a short circuit occurs on the output side, an excessive current may flow and become dangerous. For this reason, circuits of this type are inserted on both the positive and negative sides of the communication current supply circuit, but in many cases, the circuits on both sides often fail, causing excessive current to flow. Although it is technically possible to further add a current limiting circuit to prevent this, it is not desirable from the standpoint of making the device economical.

本発明はこのような通話?「流供給回路に過大電流が生
じたとき、自動的にこの電流を遮断することができると
ともに、きわめて安価な構成の過電流保護回路を提供す
ることを目的とする。
Is this invention a call like this? ``The purpose of this invention is to provide an overcurrent protection circuit that can automatically cut off the current when an excessive current occurs in a current supply circuit, and that has an extremely inexpensive configuration.

本発明は、半導体素子と直列に挿入され、半導体素子に
流れる通話電流を検出するために用いられる抵抗器を、
セラミック基板上に形成された導体膜により構成し、し
かもこの導体膜は上記通話電流の許容最大電流以下の電
流により、自己発熱して溶断するように構成することを
特徴とする。
The present invention provides a resistor that is inserted in series with a semiconductor element and used to detect the communication current flowing through the semiconductor element.
It is characterized in that it is constructed of a conductor film formed on a ceramic substrate, and that the conductor film is configured to self-heat and melt when a current is lower than the allowable maximum current of the above-mentioned communication current.

実施例図面によシ説明する。An embodiment will be explained with reference to drawings.

図は本発明実施例装置の回路図である。一端が接地され
た電源1の両端には、それぞれ抵抗器2と半導体素子3
が直列に接続されて、端子4から交換機内の加入者線へ
通話電流を供給する。この抵抗器2の両端に生じる電圧
は、制御回路5に導かれ、この電圧すなわち通話電流の
値が一定になるように、この制御回路5が半導体素子3
の等価抵抗を制御するように構成される。
The figure is a circuit diagram of a device according to an embodiment of the present invention. A resistor 2 and a semiconductor element 3 are connected to both ends of the power supply 1, one end of which is grounded.
are connected in series to supply speech current from terminal 4 to the subscriber line within the exchange. The voltage generated across this resistor 2 is guided to a control circuit 5, and this control circuit 5 controls the semiconductor element 3 so that this voltage, that is, the value of the communication current is constant.
configured to control the equivalent resistance of.

ここで本発明の特徴とするところは、この抵抗器2が、
熱抵抗の大きいセラミック基板の上に薄膜才たは厚膜に
より形成された導体膜にょシ構成されるとともに、この
導体膜は、通話電流の最大許容値以下の電流値で、自己
発熱により溶断されるように構成されるところにある。
Here, the feature of the present invention is that this resistor 2 is
A conductor film is formed of a thin film or a thick film on a ceramic substrate with high thermal resistance, and the conductor film is fused by self-heating at a current value below the maximum allowable value of the communication current. It is located in a place where it is configured so that

さらに具体的な一実施例は、抵抗器2はセラミック基板
上にチッ化タンタル薄膜により形成された導体膜より成
り、その大きさは5mmX10fiである。その抵抗値
は510である。通話電流の値ld、19.3mA〜1
20mAの間の所定の値に設定することが可能である。
In a more specific embodiment, the resistor 2 is made of a conductive film formed of a tantalum nitride thin film on a ceramic substrate, and its size is 5 mm x 10 fi. Its resistance value is 510. Talking current value ld, 19.3mA ~ 1
It is possible to set it to a predetermined value between 20 mA.

この導体膜は約270 mAの電流が継続して流れると
、約3.7Wの電力消散が生じて、数秒で溶断する。半
導体素子31d約500mAの電流によっても破壊され
ないものが用いられる。
When a current of about 270 mA continues to flow through this conductive film, a power dissipation of about 3.7 W occurs and the film melts in a few seconds. The semiconductor element 31d used is one that will not be destroyed even by a current of about 500 mA.

このような構成の装置では、回路が正常に動作している
ときには、通話電流により生じる抵抗器2の両端電圧が
、常に所定の値の範囲にあるように制御回路5が動作し
ている。かりに出力端子4が短絡に近い状態となっても
、半導体素子3の等価抵抗を高く制御して、異常な大電
流を供給することはない。しかし、何らかの原因によシ
この制御回路5およびその周辺に故障が発生したり、あ
るいは出力端子4が予期されないほど低いインピーダン
スで短絡すると、半導体素子3に異常大電流が生じるこ
とになる。
In the device having such a configuration, when the circuit is operating normally, the control circuit 5 operates so that the voltage across the resistor 2 caused by the communication current is always within a predetermined value range. Even if the output terminal 4 becomes almost short-circuited, the equivalent resistance of the semiconductor element 3 is controlled to be high so that an abnormally large current will not be supplied. However, if a failure occurs in the control circuit 5 and its surroundings for some reason, or if the output terminal 4 is short-circuited with an unexpectedly low impedance, an abnormally large current will be generated in the semiconductor element 3.

このとき、半導体素子3が破損する電流値より小さい電
流値で、抵抗器2の自己発熱がこの抵抗器2を構成する
導体膜を溶断する。これにょシ異常電流は自動的に停止
されて、保守を待つことになる。
At this time, the self-heating of the resistor 2 melts the conductive film constituting the resistor 2 at a current value smaller than the current value at which the semiconductor element 3 is damaged. If this occurs, the abnormal current will be automatically stopped and maintenance will be required.

このような構成によれば、 (1)電流検出のための抵抗器は本来必要なものであっ
て、特別に付加する必要がない、(2)  自己発熱に
よる溶断は自己回復されないがその動作はきわめて確実
であシ、めったに発生しない危険を防止するためには適
している、(3)セラミック基板−ヒに形成することに
より溶断する電流のバラツキが小さくなる、 (4)  セラミック基板上に形成することにより装置
を小形化できる、 (5)  セラミック基板上に形成することにより抵抗
器の信頼性を向上することができる、(6)  セラミ
ック基板上に形成することにより他の電子部品をこのセ
ラミック基板に混載させることができる、 (7)他の付加回路を設ける方法に比べてきわめて安価
である 等の優れた効果がある。
According to such a configuration, (1) the resistor for current detection is originally necessary and there is no need to add it specially; (2) fusing due to self-heating is not self-recoverable, but its operation is It is extremely reliable and suitable for preventing dangers that rarely occur. (3) Formed on a ceramic substrate, which reduces the variation in melting current. (4) Formed on a ceramic substrate. (5) By forming on a ceramic substrate, the reliability of the resistor can be improved; (6) By forming on a ceramic substrate, other electronic components can be attached to this ceramic substrate. (7) It is extremely inexpensive compared to other methods of providing additional circuits.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明実施例装置の回路構成図。 1・・・電源、2・・・抵抗器、3−・・半導体素子、
4・・・端子、5・・・制御回路。
The figure is a circuit configuration diagram of a device according to an embodiment of the present invention. 1...Power supply, 2...Resistor, 3-...Semiconductor element,
4...terminal, 5...control circuit.

Claims (1)

【特許請求の範囲】[Claims] (1)電話交換機の中の加入者線に通話電流を供給する
回路に接続され、通話電流の流路に挿入された抵抗器と
、この流路にこの抵抗器と直列に接続された半導体素子
と、上記抵抗器の両端に生じる電圧を入力としこの電圧
が所定の値を越えるとき上記半導体素子の抵抗値を高く
するように制御する制御回路とを正負画線にそれぞれ含
む過電流保護回路において、上記抵抗器がセラミック基
板−ヒに形成された導体膜により構成され、上記通話電
流が異常に増大したときには、上記通話電流の最大許容
値以下の電流値で上記導体膜が自己の発熱によシ溶断す
るように設定されたことを特徴とする過電流保護回路。
(1) A resistor connected to a circuit that supplies communication current to subscriber lines in a telephone exchange and inserted into a communication current flow path, and a semiconductor element connected in series with this resistor in this flow path. and a control circuit which inputs the voltage generated across the resistor and controls the resistance value of the semiconductor element to be increased when the voltage exceeds a predetermined value, respectively on the positive and negative lines. , the resistor is composed of a conductor film formed on a ceramic substrate, and when the communication current increases abnormally, the conductor film is caused to generate heat by itself at a current value below the maximum allowable value of the communication current. An overcurrent protection circuit characterized in that it is set to melt.
JP56151525A 1981-09-24 1981-09-24 Overcurrent protecting circuit Granted JPS5853289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56151525A JPS5853289A (en) 1981-09-24 1981-09-24 Overcurrent protecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151525A JPS5853289A (en) 1981-09-24 1981-09-24 Overcurrent protecting circuit

Publications (2)

Publication Number Publication Date
JPS5853289A true JPS5853289A (en) 1983-03-29
JPH0133068B2 JPH0133068B2 (en) 1989-07-11

Family

ID=15520415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151525A Granted JPS5853289A (en) 1981-09-24 1981-09-24 Overcurrent protecting circuit

Country Status (1)

Country Link
JP (1) JPS5853289A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63304793A (en) * 1987-05-15 1988-12-13 ノーザン・テレコム・リミテツド Protective arrangement for telephone subscriber line interface circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63304793A (en) * 1987-05-15 1988-12-13 ノーザン・テレコム・リミテツド Protective arrangement for telephone subscriber line interface circuit

Also Published As

Publication number Publication date
JPH0133068B2 (en) 1989-07-11

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