JPS5829861U - Wavelength control semiconductor laser device - Google Patents

Wavelength control semiconductor laser device

Info

Publication number
JPS5829861U
JPS5829861U JP12317381U JP12317381U JPS5829861U JP S5829861 U JPS5829861 U JP S5829861U JP 12317381 U JP12317381 U JP 12317381U JP 12317381 U JP12317381 U JP 12317381U JP S5829861 U JPS5829861 U JP S5829861U
Authority
JP
Japan
Prior art keywords
semiconductor laser
input
output end
laser device
wavelength control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12317381U
Other languages
Japanese (ja)
Inventor
雅文 関
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP12317381U priority Critical patent/JPS5829861U/en
Publication of JPS5829861U publication Critical patent/JPS5829861U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の二実施例の断面図である。 なお図面に使用した符号はそれぞれ以下のものを示す。 １・・・・・−半導体レーザ、２・・・・・・光ファイ
バ、３．４・・・・・・ダイヤモンドヒートシンク、５
・・・・・・銅ヒートシンク、７・・・・・・円筒体、
９・・・・・・レンズ素子、１０・・・・・・反射型エ
シュレット回折格子。FIG. 1 is a sectional view of two embodiments of the present invention. The symbols used in the drawings indicate the following. 1... - Semiconductor laser, 2... Optical fiber, 3.4... Diamond heat sink, 5
......Copper heat sink, 7...Cylindrical body,
9...Lens element, 10...Reflection type echelette diffraction grating.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 光フアイバ通信等に使用する波長制御半導体レーザ装置
において、１つの半導体レーザと、この半導体レーザに
光学的に結合された第１の入出力端部を有する光導波路
と、この光導波路の第２の入出力端部に隣接して配置固
定され当該第２の入出力端部から出射する光ビームのう
ちあらかじめ定められた波長成分の光ビームだけを回折
して戻す分光手段とを含む波長制御半導体レーザ装置。A wavelength-controlled semiconductor laser device used for optical fiber communication etc. includes one semiconductor laser, an optical waveguide having a first input/output end optically coupled to the semiconductor laser, and a second input/output end of the optical waveguide. a wavelength control semiconductor laser including a spectroscopic means that is fixedly arranged adjacent to the input/output end and diffracts and returns only a light beam of a predetermined wavelength component among the light beams emitted from the second input/output end; Device.
JP12317381U 1981-08-20 1981-08-20 Wavelength control semiconductor laser device Pending JPS5829861U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12317381U JPS5829861U (en) 1981-08-20 1981-08-20 Wavelength control semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12317381U JPS5829861U (en) 1981-08-20 1981-08-20 Wavelength control semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5829861U true JPS5829861U (en) 1983-02-26

Family

ID=29917078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12317381U Pending JPS5829861U (en) 1981-08-20 1981-08-20 Wavelength control semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5829861U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279889A (en) * 1975-12-26 1977-07-05 Nec Corp Semiconductor laser device for high speed modulation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279889A (en) * 1975-12-26 1977-07-05 Nec Corp Semiconductor laser device for high speed modulation

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