JPS5828844A - Semiconductor device - Google Patents

Abstract

PURPOSE:To assemble gate means such as a photo guide which is required for ignition of a photo thyristor without breaking it by providing the positioning member such as insulation ring etc. which specifies the mutual positional relation between a semiconductor basic element and at least the one of a pair of conductive materials and the gate means such as a photo guide arranged on a pair of main surfaces of such basic element. CONSTITUTION:The other end of L-shaped photo guide 6 is bent at the center of a semiconductor device and its end point is facing to the light sensing surface of a semiconductor (photo thyristor) 101. The conductive members 2, 3 are composed of copper and is hermetically sealed from the cylindrical insulator 5 via the flanges 71 and 72 consisting of the Fe-Ni alloy. The insulation ring 40 is placed in such a way as being engaged with the semiconductor basic element 1 comprising the conductive member 3, photo thyristor 101 and supporting electrode 102. The portion allowing insertion of the L-shaped photo guide 6 of the conductive member 2 is provided with the cut-away part 20 which is engaged with a part of the insulation ring 40.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductive device (1), applying pressure to the back and a touch type semiconductor device (191). 3. The pressure contact doctoral conductor device includes at least a) a pair of main surfaces of a semiconductor substrate having one Pn junction;
As a single body, it has a pressure contact with the 1 + 11 parts, which also serves as 1. The base structure and advantages thereof will be explained below with reference to FIG. 1; IB Vero. 7 hemp 1
In the figure, a conductive substrate 1 is generally made up of a semiconductor 101 with at least one Pn junction formed therein and an electrode plate 102 for protecting it from mechanical damage. Both are fixedly connected with 4M glue. The semiconductor 101 is made of silicon, germanium, supporting electrode plate 102, a solid body]01 and ρ (tungsten, molybdenum, etc. with similar expansion coefficients are widely used.On the pair of main surfaces of the semiconductor substrate I The pair of placement members 2 and 3 are pressed into contact with each other in a slidable state without being fixed.The conductive members 2 and 3 are preferably made of a material with low electrical and thermal resistance, such as copper or the like. Copper used for the conductive member 2.3 generally has a larger coefficient of thermal expansion than the semiconductor 101, so the copper used for the conductive member 2.3 is bonded to the semiconductor substrate 1.
Then, a large thermal stress is generated in the semiconductor 101 due to the thermal cycle that the semiconductor device undergoes during operation, and the semiconductor 101
It has a negative effect on the temperament characteristics.

In extreme cases, cracks may occur in the semiconductor 101. In order to eliminate this drawback, a structure has been proposed in which the pair of conductive parts 2, 3 and the semiconductor substrate 1 are pressed into contact with each other without being fixed to each other as described above. Such structures are now widely used in semiconductor devices such as diodes, transistors, and Zyristors for dog-like forces.

In order to employ a pressurized contact structure that is slidable, a new holding means is required to prevent the semiconductor substrate 1 and the electrode members 2 and 3 from being misaligned. Ho 1,! As a method, the structure shown in FIG. 1 is known. That is, a ring-shaped insulator 4 is provided so as to engage with the conductive members 3 and 1', 1t411 of the 9th body and 11th body 1, and one -C1 semiconductor substrate 1 is connected to the insulator 4 so as to be connected to the conductive members 3 and 1'. ≦Month 3 (1'koX"j I, ni f
<ij-determined.

As another structure, the insulator 4 is a curved blade) #11 part 2
There is a structure in which the semiconductor body 1 is positioned with respect to the conductive part AK 2 in contact with the conductive part AK 2 . Further, a structure in which the semiconductor substrate 1 is positioned at 7+j on the inner 1111 side 11 of the cylindrical insulating body 5 is also known.

In the conventional 1SJ construction mentioned above, the goal of maintaining the base weight of the half- and r14 bodies is achieved, but due to the disadvantage, the central axes of the members 2 and 3 are shifted and pressure is applied. There is a risk of being contacted.

When a center axis misalignment occurs, a stress is applied to bend the semi-JM body substrate 1♀ when pressurized, and this bending stress causes an uneven load to be applied to the semiconductor 101, resulting in uneven electrical and thermal resistance. This has an adverse effect on the electrical characteristics, such as causing 5Mf, East and Middle. If the semiconductor substrate 1 is a Zyristor, extend the gate connecting means through a part of the cylindrical insulator 5 toward the center of the semiconductor device, bend the tip into an L-shape, etc., and connect the semiconductor 101. It is necessary to locate it in a predetermined part, for example, in the center. Furthermore, if the semiconductor body 1 is an optical thyristor, a light guide is used as the gate connection means. In these cases, it is necessary to provide a notch 20 in a part of the conductive member 2 as shown in FIG.
It is also necessary to perform alignment with the light guide 6. especially,
In the case of an optical thyristor, the light guide is generally made of a glass material and has low mechanical strength. Positioning not only in the rotational direction but also in the rotational direction is important in terms of protecting the light guide 6.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device having a structure that solves the above-mentioned drawbacks and can be assembled without damaging gate means such as a light guide necessary for ignition of an optical thyristor.

The present invention provides a positioning member such as an insulating ring that defines the mutual positional relationship between at least one of the conductive members and the gate means such as the light guide, which are arranged on the semiconductor substrate and its pair of main surfaces. That! ] There are four signs.

Hereinafter, the features of the present invention will be explained in detail with reference to all specific embodiments. FIG. 2 15 shows a vertical cross-sectional structure of the first embodiment of the present invention. The J-shaped light guide 6Vi is made of quartz glass alone or t1η of a quartz fiber with a cladding layer, and is a metal sleeve that passes through the cylindrical insulator 5 and is bonded to it with silver solder. 60 and extends to the outside of the semiconductor device. Since the light guide 6 has excellent chemical stability, it is preferable that the light guide 6 is made of solid wood or made of rock material. The other end of the L-shaped light guide is bent at the center of the semiconductor device, and its tip is connected to the light receiving part of the semiconductor (hereinafter referred to as an optical zyristor) 101. The conductive members 2 and 3 are made of copper, and are hermetically sealed to the cylindrical insulator 5 via fludges 71 and 72 made of Fe--N1 alloy. The insulating ring 40 connects the conductive member 3 (hereinafter referred to as the lower boss), the optical zyristor 101 and the supporting electrode 10.
The optical thyristor subassembly (hereinafter referred to as the optical thyristor subassembly) (2) is arranged so as to be engaged with the semiconductor substrate (hereinafter referred to as an optical thyristor subassembly) (2). The portion of the conductive member 2 (hereinafter referred to as the upper boss) into which the L-shaped light guide is inserted is provided with a notch 20, and a portion 401 of the insulating ring 40 has a 114 structure that fits into the notch 20. Fig. 3 shows a three-dimensional view of the insulating ring 40.The insulating ring 40 is made of a material that is resistant to mechanical deformation and is chemically and thermally stable, such as ceramics and tetrafluoroethylene. It is undesirable that it consists of a collar.

Next, an example of an assembly method of the first embodiment of the present invention will be shown. After welding the cylindrical insulator 5 and the lower boss 3 via the flange 72, the optical thyristor subassembly 1 is inserted. Next, the L-shaped light guide 6 is passed through the hollow part of the metal sleeve 60, and the light guide 6 and a part of the metal sleeve 60 are hermetically bonded. There are various methods and structures for airtight contact, but they are not directly related to the content of the present invention and will therefore be omitted. Then the third
An insulating click 40 is inserted 12 using the notch 402 shown in the figure as a guide for the L-shaped light guide, and is engaged with the outer surface of the optical fiber subassembly 1. be in a fixed positional relationship with F91. After that, guide the protrusion 101 extending inside the insulating ring to the upper boss 2, and then lower the upper boss 2 (through the flange 71 of the body 5). Weld in step 1 to create an airtight structure.

In this embodiment, the protrusion 401 of the insulating ring 40
Insert "nibos]・2 using as a guide. At this time, since the light guide 6 is protected by the insulating lick 40, all the posts can be set in the light guide 6f: break 4fi -1-.

FIG. 4 shows the cross-sectional structure of the second actual MIL example of the present invention. In the same part of the arch as in FIG. 2, parts equivalent to those in FIG. -1 of insulation lick 41
SIS 413 engages the outer diameter of metal sleeve 60.
: It has an eel structure. FIG. 5 shows a three-dimensional diagram of the insulating ring 41. By providing the protrusion 413 that engages with the metal sleeve 60, the I-cough insulator 41 loses its relative position to the cylindrical insulator 5. Therefore, it is possible to prevent the circumferential ring 41 from rotating in the circumferential direction, and the light guide 6 will not be damaged. In addition, since the protruding portion 411 is provided, the upper post 2 can be easily guided in the same manner as shown in the first embodiment. Further, in this embodiment, the outer diameter of the lower post 3 on the subassembly 1 side and the inner diameter of the insulating ring 41 are made the same.

6 and 7 are embodiments 3.4 of the present invention,
These are modifications of the embodiments shown in FIGS. 3 and 5, respectively. The insulating rings having the structures shown in FIGS. 6 and 7 show structures that can be adopted when the procedure for assembling the semiconductor device is changed. That is, it is suitable for the case where the cylindrical insulator 5 of the upper post 2 is first welded via the flange 71, and then the optical zyristor subassembly 1, then the insulating ring 42 or 43, and the lower post 3 are assembled in this order. As described above, the effect of each of the insulating rings 42 and 43 is similar to that of 40 and 41, respectively.

FIG. 8 shows a longitudinal cross-sectional structure of a fifth embodiment of the present invention.

The insulating ring 44 has a radius on its inner surface larger than the radius on the outer surface of the upper post 3, but has a protrusion 414 at the negative end of the insulating ring, which allows the upper post and the insulating lick 44 to engage. . FIG. 9 shows a three-dimensional view of the absolute gIJ ring 44. Difference 1 from the second embodiment shown in FIG. 5:
Protrusions 414° and 415': By providing these, the lower bosses 2 and 3 and the insulating licks 4
4 can be defined, the upper boss 2
゜The lower boss 3, the optical fiber assembly 200, and the phase/first position blue can be defined with even greater accuracy. The sleeve 60 is provided with a collar 61 for positioning the insulating ring.

Although the insulating ring described above is shown as an integral structure, it is clear that it may be constructed of two or more parts. 1<16
As long as the insulation between the materials is ensured, all electrically conductive materials may be used in some parts. The circumferential wall of the insulating ring is not only cylindrical, but it can also be deformed as long as the overall shape remains intact.
You can partially open the window or create a shelf. Furthermore, the eighth
The protrusion 414 shown in FIGS. 9 and 9 may be provided in the entire circumferential direction of the entire insulation ring, or may be applied to other embodiments. In this way, parts of the embodiments can be freely applied. As a semiconductor, it can also be applied to electric gate zyristor # as long as it has similar problems. It's a support type @j! ,)
L202 may be omitted. Furthermore, a known interple buffer may be added between the semiconductor and the upper boss. The present invention can be applied to a double-sided pressure contact type or a single-sided pressure contact type.

As explained above, according to the present invention, it is possible to obtain a semiconductor device whose positioning is easy and reliable and whose members are free from damage.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing a conventional semiconductor device, FIGS. 2 to 9 are diagrams for explaining an embodiment of the semiconductor device of the present invention, and FIGS. The longitudinal sectional views of the device, FIGS. 3, 5, 6, 7, and 9 are three-dimensional views of the insulating ring. 2.3... Conductive member (upper post, lower post), 4゜4
0.41. ．． 42,43.44...Insulation ring,■・
・・Semiconductor substrate (optical xyristor subassembly), No.
1 Figure / Figure 2 3 Figure 40 Prison 8 Figure C / Figure

Claims (1)

[Scope of Claims] 1. A semiconductor substrate having at least one Pn junction, a pair of conductive members that sandwich the semiconductor substrate from both sides of the pair of main surfaces thereof, and an airtight conductive member that is integrated with the conductive member. a cylindrical insulator that forms a container and seals the semiconductor substrate in the airtight container; a gate means that penetrates the cylindrical insulator and transmits a signal from the outside to a predetermined portion of the semiconductor substrate; The conductive member is directly or indirectly pressed on at least one of the conductive members on the amphibatic surface of the semiconductor device to obtain inspiratory and thermal contact. A semiconductor device characterized in that it has a positioning member that includes a portion that engages from the periphery to position them, and a portion that fits into the notch of one four-section member that has a notch that guides all of the gate means. . 2. In claim 1, the positioning member has inelasticity and is made of a thermally and chemically stable insulating material. 3. F at the top of the first claim, and I.
The means is a light guide consisting of inorganic particles; 1-31;
A 16° semiconductor device having 'R1+- characteristics that the semiconductor substrate is an optical zyristor.