JPS5821530A - High-temperature device for sample - Google Patents

High-temperature device for sample

Info

Publication number
JPS5821530A
JPS5821530A JP56121123A JP12112381A JPS5821530A JP S5821530 A JPS5821530 A JP S5821530A JP 56121123 A JP56121123 A JP 56121123A JP 12112381 A JP12112381 A JP 12112381A JP S5821530 A JPS5821530 A JP S5821530A
Authority
JP
Japan
Prior art keywords
thermocouple
sample
temperature device
temperature
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56121123A
Other languages
Japanese (ja)
Inventor
Tamio Oguchi
小口 民雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56121123A priority Critical patent/JPS5821530A/en
Publication of JPS5821530A publication Critical patent/JPS5821530A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/04Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples the object to be measured not forming one of the thermoelectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE:To prevent burnout of a thermocouple, by using tungsten and graphite as a material of a thermocoupler. CONSTITUTION:Tungsten is used as a material of a thermocouple at a plus side and graphite at a minus side. The semiconductor thermocouple is used with temperature control for a high-temperature device for a sample.

Description

【発明の詳細な説明】 本発明はXS@折装置の試料高温装置の改良に関する。[Detailed description of the invention] The present invention relates to an improvement of a sample high temperature device for an XS @ folding device.

本発Ijio目的は、試料高温装置の11度制御用熱電
対O材質として中脚にタングステン、−脚にグラファイ
ト(以下W−Grという)の半導体熱電対を使用するこ
とにより、熱電対の1lFIIを防止することにある。
The purpose of this Ijio is to use a semiconductor thermocouple with tungsten for the middle leg and graphite (hereinafter referred to as W-Gr) as the material for the thermocouple O for controlling the 11 degrees of the sample high temperature device. The purpose is to prevent it.

従来の試料高温装置の温度制御用熱電対の材質は、中脚
にプラチナ87%、薗ジウム13襲の合金を、−脚にプ
ラチナ100%(以下Pt・13Rh −1tという)
の貴金属系熱電対を使用していた。通常の試料を高温下
で分析するには、従来品のPt・filth−Pt製で
充分使用可能であるが、希土類フパルト磁石であるすマ
リラム・コバルト系磁石(以下am−oo系磁石と動磁
石のX@回折の分析を高温条件のもとで行なう場合は、
1si−Go系磁石O含有元索であるa鵬が高温下にお
いて蒸発しやすい金属であるため、このB論と熱電対の
Ptが反応し合いgjmlPtという化合物が生成して
しまう。このためIIs、Pt化合物が熱電対の一脚O
Pt線に作用し、高温下でこの化合物が次第に成長拡大
して瞥・1き、この成長部分がもろく、脆弱化してつい
にはこの部分から断線して使用できなくなるという不具
合が発生していた。
The material of the thermocouple for controlling the temperature of conventional sample high temperature equipment is 87% platinum and 13% platinum alloy for the middle leg, and 100% platinum (hereinafter referred to as Pt/13Rh-1t) for the - leg.
A noble metal thermocouple was used. Conventional products made of Pt and filth-Pt can be used to analyze ordinary samples at high temperatures, but rare earth Fpart magnets such as sumariram cobalt magnets (hereinafter referred to as am-oo magnets and moving magnets) When performing X@ diffraction analysis under high temperature conditions,
Since the O-containing element of the 1si-Go magnet is a metal that easily evaporates at high temperatures, theory B and the Pt of the thermocouple react with each other to form a compound called gjmlPt. Therefore, IIs, Pt compound is one leg of thermocouple O
This compound acts on the Pt wire and gradually grows and expands under high temperatures, causing the growing part to become brittle and brittle, eventually causing the wire to break and become unusable.

本発明はかかる欠点をWkmしたもので、熱電対として
pt−tank−yp*@に代わるW −G r線を使
用し熱電対の断線を防止したものである。
The present invention solves this drawback by using a W-Gr wire instead of pt-tank-yp*@ as a thermocouple to prevent disconnection of the thermocouple.

WおよびG’rは希土類元素とは金属間化合物なつくら
ず、またmsもし合わない。したがって希土類元素の代
表的元素であるsmとも反応しないため、熱電対O長寿
命化が計れるものである。
W and G'r do not form an intermetallic compound with rare earth elements, and neither do they have ms. Therefore, since it does not react with sm, which is a typical rare earth element, the life of the thermocouple O can be extended.

以下、実施例をあげ本発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to Examples.

実施例は次の試験方法により行なった。Examples were conducted using the following test method.

(i)線11 (L 、S IImの本発明品を試料高
温装置のデ体に取りつける。
(i) Attach the inventive product of wire 11 (L, S IIm) to the body of the sample high temperature device.

C)室温から1500℃まで昇温し、その温度で1時間
保持したのち自然放冷により降温する。
C) The temperature is raised from room temperature to 1500°C, held at that temperature for 1 hour, and then lowered by natural cooling.

(8)試料はaim−00系磁石パウダーを使用し、1
回O昇温→降温のつど、新しいパウダーに散り替える。
(8) The sample used aim-00 series magnet powder, 1
Every time the temperature rises and falls, sprinkle with new powder.

(4)試料および熱電対の高温醸化防止のため、不活性
ガスであるアルゴンガスを264流す。
(4) In order to prevent the sample and thermocouple from accumulating at high temperatures, argon gas, which is an inert gas, is flowed at 264°C.

上記試験方法により、熱電対が断線するまでO繰り返し
回数によって評価した結果、従来品の21・15!Lh
−Pt線は20回の繰り返し回数にようて一脚のptl
lが断線してしまったが、本発明によるW −G r線
は30回繰り返してもなお充分に使用可能である。
According to the above test method, the thermocouple was evaluated by the number of O repetitions until it broke, and the result was 21.15 compared to the conventional product! Lh
- The Pt line is the monopod's ptl as per 20 repetitions.
1 was broken, but the W-G r wire according to the present invention can still be used satisfactorily even after 30 repetitions.

以上より、本発明1は従来品に比べて、断線に対してき
わめて強いことがわかる。
From the above, it can be seen that the present invention 1 is extremely resistant to wire breakage compared to conventional products.

したがって高温下における希土類元素のXil@折に応
用した場合、充分な効果が得られるものである。
Therefore, when applied to Xil@-folding of rare earth elements at high temperatures, sufficient effects can be obtained.

以上 出願人 株式会社諏訪精工舎 代理人 弁理士 最上  務that's all Applicant: Suwa Seikosha Co., Ltd. Agent Patent Attorney Mogami

Claims (1)

【特許請求の範囲】[Claims] xIIII折装置において、試料を高温度に温度制御す
るための熱電対の材質として中脚にタングステン、−脚
にグラ7アイ訃の半導体熱電対を使用することを特徴と
する試料高温装置。
A sample high temperature apparatus characterized in that a thermocouple material for controlling the temperature of a sample at a high temperature in a xIII folding apparatus uses tungsten for the middle leg and a GL7I semiconductor thermocouple for the -leg.
JP56121123A 1981-07-31 1981-07-31 High-temperature device for sample Pending JPS5821530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56121123A JPS5821530A (en) 1981-07-31 1981-07-31 High-temperature device for sample

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56121123A JPS5821530A (en) 1981-07-31 1981-07-31 High-temperature device for sample

Publications (1)

Publication Number Publication Date
JPS5821530A true JPS5821530A (en) 1983-02-08

Family

ID=14803446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121123A Pending JPS5821530A (en) 1981-07-31 1981-07-31 High-temperature device for sample

Country Status (1)

Country Link
JP (1) JPS5821530A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320034A (en) * 1986-07-11 1988-01-27 Mitsui Toatsu Chem Inc Deodorizer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320034A (en) * 1986-07-11 1988-01-27 Mitsui Toatsu Chem Inc Deodorizer

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