JPS58209294A - Transducer - Google Patents

Transducer

Info

Publication number
JPS58209294A
JPS58209294A JP9201882A JP9201882A JPS58209294A JP S58209294 A JPS58209294 A JP S58209294A JP 9201882 A JP9201882 A JP 9201882A JP 9201882 A JP9201882 A JP 9201882A JP S58209294 A JPS58209294 A JP S58209294A
Authority
JP
Japan
Prior art keywords
electrode
impedance conversion
conversion element
base board
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9201882A
Other languages
Japanese (ja)
Inventor
Hiroto Wada
和田 博人
Minoru Nishizono
稔 西園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9201882A priority Critical patent/JPS58209294A/en
Priority to GB08314336A priority patent/GB2122842B/en
Priority to DE19833319311 priority patent/DE3319311A1/en
Priority to KR1019830002371A priority patent/KR860000640B1/en
Priority to US06/499,555 priority patent/US4621171A/en
Publication of JPS58209294A publication Critical patent/JPS58209294A/en
Priority to US06/636,740 priority patent/US4615105A/en
Priority to SG94/86A priority patent/SG9486G/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers

Abstract

PURPOSE:To make a transducer extremely smaller and thinner in size, by housing an impedance conversion element in a housing part provided for a insulation base board which constitutes the transducer. CONSTITUTION:A fixed electrode 3 consisting of an electrode 1 and a high polymer dielectric layer 2, and a supporting ring 17, which surrounds the fixed electrode 3 with a specified intervals, are formed on the upper surface of an insulation base board 16. At the end of the ring 17, an oscillating film 6 composed of an insulation film 18 and conductive film 19 is stretched by putting a specified distance from the electrode 3. On the lower surface of the base board 16, an earth electrode 21 and output electrode 20 to be connected to an impedance conversion element 8 housed in a housing hole 23 of the base board 16 are formed. Since the impedance conversion element is housed by using the thickness of the insulation board 16, it can be made to be smaller in size.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明はエレクl〜レット形]ンデンザ・マイクロホン
等に好適するトランスジューサに関ゾる。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a transducer suitable for electronic microphones and the like.

[発明の技術向背m〕 トランスジコーリ、例えばエレクトレット形−】ンデン
サ・マイクロホンは、第1図に示すように、電mlの一
方の主表面にルクトレット化された高分子誘電体M2を
形成して構成した固定電極3を、筒形基台4の上側開成
[]に支持させ、この基台4の上端縁にスペーサリング
5)を介しく振動膜6の張架された膜リング7を柚重ね
、筒形基台4内に収納したインピーダンス変換素子8の
人力リード9を電極1の下面に接触させ、ま1.:イの
出力リード10を筒形基台4の+側開成]1を基くノリ
ント基板11の回路パターン12へ接わ°cし・、金属
製ケース13をこれら振動膜6、膜リング7、スペーサ
リング5および筒形基台4に被t! (”4台4の下面
で折曲するようにかしめたm’lliをイ」(−・Cい
る。
[Technical background of the invention] A transdicoli, for example, an electret type microphone, as shown in FIG. The configured fixed electrode 3 is supported on the upper opening of a cylindrical base 4, and a membrane ring 7 on which a vibrating membrane 6 is stretched is stacked on the upper edge of this base 4 via a spacer ring 5). , the human lead 9 of the impedance conversion element 8 housed in the cylindrical base 4 is brought into contact with the lower surface of the electrode 1; : Connect the output lead 10 of A to the circuit pattern 12 of the Norint board 11 based on the + side opening of the cylindrical base 4. The ring 5 and the cylindrical base 4 are covered with t! (“I bent the m'lli on the bottom of the 4 units 4” (-・C).

なお符号14および15は、プリンl−M板11に植設
した外部出力端子おJ、びケース134Z設けた音通孔
である。  ゛ このエレクトレット形」ンデン1〕・ンイクロホンは、
固定電極3と振動膜6間の間隔の変化に応じた容量変化
を介して音声信月を、インピーダンス変換素子8でイン
ピーダンスNJ?して外部に出力するものである。
Reference numerals 14 and 15 indicate an external output terminal J implanted in the pudding l-M board 11 and a sound hole provided in the case 134Z. ``This electret type'' Nden 1] Nichrophone is,
The sound signal is transmitted through a capacitance change according to a change in the distance between the fixed electrode 3 and the vibrating membrane 6, and the impedance NJ? The data is then output to the outside.

[背景技術の問題点] しかしながら、このように構成された従来のTレフトレ
ット形二]ンデンリ・マイクロホンは、固定電極3とプ
リント基板11の間にインピーダンス変換素子8を収納
リ−るために筒形基台4を必要とするので、どうしても
形状が大形化する欠点がある。
[Problems with the Background Art] However, the conventional T-leftlet type microphone configured as described above requires a tube to house the impedance conversion element 8 between the fixed electrode 3 and the printed circuit board 11. Since the shape base 4 is required, there is a drawback that the shape inevitably becomes large.

また、固定電極3および膜リング7の他に、スペーサリ
ング5や基台4およびプリントM根11等多くの構成部
品を積重ね、さらにケース13を被せて一体化して構成
されるので、構成部品が多くなり各構成部品の寸法精度
がばらつき易く、また構成部品間の気密が不十分となっ
て特性が均一とならない難点があり、組立作業に慎重さ
が要求されることから作業も煩雑となっC醋産に適さな
いものであった。
In addition, in addition to the fixed electrode 3 and the membrane ring 7, many other components such as the spacer ring 5, the base 4, and the printed M base 11 are stacked together, and the case 13 is further placed on the stack to integrate the components. As the number of components increases, the dimensional accuracy of each component tends to vary, and the airtightness between component parts becomes insufficient, resulting in uneven characteristics.The assembly process also requires careful attention, making the work complicated. It was not suitable for making sake.

[発明の目的] 本発明はこのような欠点を解消するためになされたもの
で、インピーダンス変換素子を内蔵するトランスジ」−
与にあ・)て、形状が極めて小さく構造も簡申で嬌産に
適した安価なトランスジ1−りの提供を目的とするもの
である。
[Object of the Invention] The present invention has been made to eliminate such drawbacks, and is directed to a transformer incorporating an impedance conversion element.
Accordingly, the object of the present invention is to provide an inexpensive transformer which is extremely small in size, simple in structure, and suitable for commercial production.

[発明の概要] この目的を達成するために本発明は、偏’l’ %絶縁
基板上に電極を形成し、この電極の前面にI力定の間隔
を隔てて振動膜を伽架りるどとb LJ、 ’tの電極
にインピーダンス変換素子の入力端1°タ′電気的に接
続してなるトランスジ1−1ノにJjい(、]記インピ
ーダンス変換素子が1記絶縁阜0にf二;iu fJた
収納部に収納されてなることをp) 徴L−(−y、1
〜′/ンスジユーサを構成する絶縁!4板のJ’j d
)を1川してこの絶縁基板内にインピーダンス変換永r
を収納することによりトランスジJ−+j(1)47小
形化、特に薄形化と崩産廿の向4.を図るしの(ある1
゜[発明の実施例] 政下本発明の詳細を図面を参照し′)つ説明゛する。
[Summary of the Invention] In order to achieve this object, the present invention forms an electrode on a biased insulating substrate, and a vibrating membrane is mounted on the front surface of the electrode at a constant interval of I force. The input terminal of the impedance conversion element 1-1 is electrically connected to the electrode of LJ and t, and the impedance conversion element 1-1 is electrically connected to the electrode of 2; iu fJ is stored in the storage section p)
~'/Insulation that makes up Susujiusa! 4 board J'j d
) and then transform the impedance into this insulating substrate.
By accommodating the transducer J-+j (1) 47, it is possible to reduce the size of the transducer, especially its thinness, and the direction of collapse.4. (1)
[Embodiments of the Invention] The details of the present invention will now be explained with reference to the drawings.

なお従来例と共通する部分←二(,1同−のil弓をイ
・」づ。
Note that the parts common to the conventional example are ←2(, 1 and 1).

第3図および第4図は本発明のトノンスジ1−サの一実
施例をエレクトレッ1〜形−1ンYンリ・ンイクロホン
を例にして示J縦断面図おJ、び底面図である。
FIGS. 3 and 4 are a vertical cross-sectional view and a bottom view, respectively, showing one embodiment of the sensor of the present invention, using an electret type 1 to type 1-type microphone as an example.

図において絶縁基板16は偏平な同根状をイ「シ、一方
の主表面(図中」而)の中央には絶縁基板16より小径
の同根状の電極1が形成されている。
In the figure, the insulating substrate 16 has a flat, same-root shape, and an electrode 1 having a smaller diameter than the insulating substrate 16 is formed in the center of one main surface (in the figure).

電極1の上面にはエレクトレット化された高分子M電体
層2が被着されて固定電極3が構成されている。
A fixed electrode 3 is formed by depositing an electret polymer M electric layer 2 on the upper surface of the electrode 1 .

絶縁基&16の−1一端縁には、固定型&3″と所定の
間隔でこれを囲むように導電性の支持リング17が形成
されている。この支持リング17は、電極1と同材料で
形成され、外端には絶縁性フィルム18の下面に導電薄
膜19を蒸礪等により形成した振動膜6が、導電薄膜1
9を支持リング17に接触さUるとともに固定型8A3
の前面に所定の間隔をおくようにして張架されている。
A conductive support ring 17 is formed at one edge of the -1 end of the insulating base &16 to surround the fixed mold &3'' at a predetermined interval.This support ring 17 is made of the same material as the electrode 1. At the outer end, a vibrating membrane 6 is formed by forming a conductive thin film 19 on the lower surface of an insulating film 18 by vaporization or the like.
9 is brought into contact with the support ring 17, and the fixed mold 8A3
They are strung up in front of each other at predetermined intervals.

なお、支持リング17は固定電極3よりもνみが厚くな
・ン一(おり、振動膜6の支持層およびスパー11リン
グとして機能づる。
Note that the support ring 17 is thicker than the fixed electrode 3 and functions as a support layer for the vibrating membrane 6 and a spar 11 ring.

絶縁基板16の他方の主表面(図中下面)には、出力電
極20が形成されており、またこの出力電極20を囲む
ように電気的に絶縁されたアース電44i21が形成さ
れている。支持リング17およびアース電極21は接続
リード22によつ(接続されている。
An output electrode 20 is formed on the other main surface (lower surface in the figure) of the insulating substrate 16, and an electrically insulated ground conductor 44i21 is formed so as to surround the output electrode 20. The support ring 17 and the ground electrode 21 are connected to a connecting lead 22.

電極1の周面近傍にお番プる絶縁基板1(5にはこれを
貫通する収納孔23が穿設され(Jjす、この収納孔2
3にはFETt−ランジスタ等か+−’、 %るインピ
ーダンス変換素子8が収納されている。インピーダンス
変換素子8の入力端子’d l、iわら人ツノリード9
は、固定電極3の電極1に1′田イ・目Jされるととも
に、出力リード10が絶縁g & 16 ’l・而の出
力電極20に半田付は接続されている。。
A storage hole 23 is formed in the insulating substrate 1 (5) near the circumferential surface of the electrode 1 (Jj, this storage hole 2
3 houses an impedance conversion element 8 such as a FET transistor. Input terminal of impedance conversion element 8 'd l, i Strawman horn lead 9
is connected to the electrode 1 of the fixed electrode 3 by soldering, and the output lead 10 is connected to the output electrode 20 of the insulated electrode 1 by soldering. .

このエレクトレット形−]ンデンリパンイク1−1ホン
においては、振動膜6の振動に応じc 1.’d定電神
3と振動WIA6間の客間が変化し、だの容W変化に応
じた出力電圧がインピーダンス索f8cインピーダンス
変換されて出力電極20と支111IJンク]7に接続
されたアース電極21を出力端としく出力される。
In this electret type 1-1 phone, c 1. 'd The drawing room between the constant electric current 3 and the vibration WIA 6 changes, and the output voltage according to the change in the voltage W is impedance-converted to the output electrode 20 and the ground electrode 21 connected to the support 111IJ link]7 is output as the output end.

このように構成されlこ本発明の[レフ1−レット形コ
ンデンサ・マイクロホンは、インピーダンス変換素子8
が絶縁基板16に形成された収納孔23内に収納されて
いるので、インピーダンス変換系子8の体積分を絶縁足
板16の厚みを利用して吸収可能となるので、従来の如
く筒形基台4を用いることなくインピーダンス変換素子
(J、 f、−コンパクトに絶縁基板16内に収納が可
能となって、大幅に小形化特に薄形化される。
The reflex 1-let type condenser microphone of the present invention constructed as described above has an impedance conversion element 8.
is housed in the storage hole 23 formed in the insulating substrate 16, so that the volume of the impedance conversion system 8 can be absorbed by using the thickness of the insulating foot plate 16. The impedance conversion element (J, f, -) can be compactly stored in the insulating substrate 16 without using the stand 4, and the size and thickness can be significantly reduced.

特に近年、半導体技術の進歩に伴いインピーダンス変換
素子8の形状が小形化されているので、絶縁基板16内
に十分収納可能である。
Particularly in recent years, as the impedance conversion element 8 has become smaller in size with advances in semiconductor technology, it can be sufficiently accommodated within the insulating substrate 16.

また、本発明のルクトレット形コンデンリ・マイクD 
il−ンは、絶縁基板161に被着した電極1およびス
ペーサリングを兼ねる支持リング17て・構成されるの
で、構成部品が大幅に減少するうえ、後述4るvJ造方
法からも明らかなように特性が均一 (“(社)産性も
良好である。
In addition, the luctoret type condenser microphone D of the present invention
Since the insulator is composed of the electrode 1 adhered to the insulating substrate 161 and the support ring 17 which also serves as a spacer ring, the number of component parts is greatly reduced, and as is clear from the vJ manufacturing method described in 4 below. Characteristics are uniform (“Productivity is also good.

以下、本発明のJレフトレット形コンデンサ・マイク【
1ホンの製造1ノ法の一実施例を説明する。
Below, the J leftlet type condenser microphone of the present invention [
An example of one method for manufacturing one phone will be described.

まず、第5図に示すように、絶縁基板16の両−1−表
面に導電層24.25の被着された両面プリン1〜基@
26を用怠する。
First, as shown in FIG.
26 is neglected.

そして、第6図のように、この両面プリンl−1;4板
26の上面の導電層24から従来公知のノat・エツチ
ング等の化学的処理により、電極1Jjよびこれを囲む
支持リング17を形成J−る /J、1・面の導電層2
5から同様にフォトTツfング等により出力電極20お
よびアース電極21を形成する。
Then, as shown in FIG. 6, the electrode 1Jj and the support ring 17 surrounding it are formed from the conductive layer 24 on the upper surface of the double-sided print l-1;4 plate 26 by a conventionally known chemical treatment such as etching. Forming J-ru /J, 1・Conductive layer 2 on the surface
From No. 5 onwards, the output electrode 20 and the ground electrode 21 are formed in the same manner by photo-Tampling or the like.

なお電極1等は化学的処理のはか、切削等の機械的処理
によっても形成可能である。
Note that the electrode 1 and the like can also be formed by chemical processing or mechanical processing such as cutting.

次に、第7図に示すように、支持リング17で囲まれた
電極1の上面をやはり−fツブング′、°ノ従来公知の
手法により削って薄くした後、6分1′誘電体層を被着
し、これを加EE ?la等にJ、リルり1〜レツト化
して固定電極3を構成する。畠分子誘電体層は予め■レ
フトレット化されたものを被着してもよい。
Next, as shown in FIG. 7, the upper surface of the electrode 1 surrounded by the support ring 17 is shaved and thinned by a conventionally known method, and then a 1/6'' dielectric layer is formed. Deposit and add this? The fixed electrode 3 is constructed by converting J and rills 1 to 1 to 1 and 1 to 1 and 1 to la, etc., respectively. The Hatake molecular dielectric layer may be formed into a leftlet in advance.

その後、第8図に示すように、固定型143の周辺にお
ける絶縁基板16J3よび7−ス電捗21にこれらを貫
通する収納孔23を穿設し、この収納孔23内にインピ
ーダンス変換素r8を収納りるとともに、その入出力リ
ード9.10をぞれぞれ電極1 d3よび出力電極20
に半[l付【)接続づる一方、支持リング17の」端に
振動機6を張架し、支持リング17と7−ス電41i2
1庖接続して完成づる1、なお収納孔23は、第5図に
示づ両面1リント基板26に矛め穿設しておいてもよい
Thereafter, as shown in FIG. 8, a storage hole 23 is bored through the insulating substrate 16J3 and the 7-wire conductor 21 around the fixed mold 143, and an impedance conversion element r8 is inserted into the storage hole 23. At the same time, the input/output leads 9 and 10 are connected to electrode 1 d3 and output electrode 20, respectively.
On the other hand, the vibrator 6 is stretched over the end of the support ring 17, and the support ring 17 and the
The storage hole 23, which is completed by connecting one piece, may be drilled in the double-sided one-lint board 26 shown in FIG.

このように本発明のエレクトレット形]ンデンリ・ンイ
クロ小ンにあっては、絶縁基板16の両生表面に導電層
24.25を被着した両面プリント基板26を利用し、
ハ面の導電層24からTレフトレット形コンデンサ・マ
イクロホンを構成する電極1および支持リング17を形
成し、下面の導電層25から出力電極20およびアース
電極21等の外部用ツノ電極を形成してなるので、極め
て薄形となるうえ、電極1および支持リング17かあら
かじめ絶u IJ 、& 16に被着されCいるの(・
、各構成部品の寸法粘度が一定となるうえ構成部品間の
気密も一1分保Iこれ、特性が均一化される。
As described above, in the electret-type electret type micron according to the present invention, a double-sided printed circuit board 26 having a conductive layer 24 and 25 coated on the bidirectional surface of the insulating substrate 16 is used.
The electrode 1 and support ring 17 constituting the T leftlet type condenser microphone are formed from the conductive layer 24 on the top side, and the external horn electrodes such as the output electrode 20 and the ground electrode 21 are formed from the conductive layer 25 on the bottom side. Therefore, it is extremely thin, and the electrode 1 and the support ring 17 are not attached to the electrode 1 and the support ring 16 in advance.
In addition, the dimensional viscosity of each component becomes constant, and the airtightness between the components is also maintained for 11 minutes, making the characteristics uniform.

ぞして、収納されるインピーダンス変換索子8の入力リ
ード9は、電極1とアース電極21の間に位置するので
、人力リード9がシールドされて外来ノイズをひろいに
くくなる利点がある、。
Since the input lead 9 of the impedance conversion cable 8 to be stored is located between the electrode 1 and the ground electrode 21, the human power lead 9 is shielded and has the advantage of being difficult to pick up external noise.

さらにまた、両面プリント基板26には同+1.’lに
多数の電極1および支持リング17の形成が可能である
ので、同時に多数の■レフ1〜レツI−形lンデンサ・
マイクロホンを製造ケることか「り能どなり、鰺産性も
良好である。なお、1リンl $J & 26にはミシ
ン目やV溝等の分割f段を形J/i l)(d3けば、
容易に分割可能である。
Furthermore, the double-sided printed circuit board 26 has the same +1. Since it is possible to form a large number of electrodes 1 and support rings 17 at the same time, it is possible to form a large number of electrodes 1 and support rings 17 at the same time.
It is possible to manufacture microphones, and the production of mackerel is also good.In addition, the 1L $J & 26 has division f stages such as perforations and V grooves. fluff,
Easily divisible.

また、本発明のエレクトレフ1〜形」ジノ0ンリ・マイ
クロホンの実施にあたっては、収納孔23を穿設してイ
ンピーダンス変換系子8を収納する揚台に限らず、プリ
ントu板秀の比較的偏重41絶縁基板16の上面もしく
は下面に四部をIGtてインピーダンス変換素子8を収
納りることもLIJ能【・あり、要は収納部を設けCそ
こにインピーダンス変換素子を収納することにより本発
明の目的)構成が可能である。
In addition, in implementing the Electref 1 to 1-type Zino 0-only microphone of the present invention, it is not limited to the lifting platform that has the storage hole 23 and stores the impedance conversion system 8, but also has a relatively unbalanced use of the printed U board. 41 It is also possible to store the impedance conversion element 8 by IGt on the upper or lower surface of the insulating substrate 16 in four parts.The purpose of the present invention is to provide a storage part and store the impedance conversion element there ) is configurable.

[発明の効果] 以上説明したように本発明のトフンスジノーリは、イン
ピーダンス変換素子が、トレンスジJ −リを構成する
偏平な絶縁基根に設(Jた収納部に収納されてなるので
、絶縁基根によ・)でインピーダンス変換素子の保持が
i+J能となるとともに絶縁基根の厚みを利用してイン
ピーダンス変換索子の収納スペースを吸収可能となり、
極−めで小形かつ薄形となる。
[Effects of the Invention] As explained above, in the present invention, the impedance converting element is installed in the flat insulating base constituting the transformer, and is housed in the flat insulating base. With 2), the impedance conversion element can be held in i+J capacity, and the storage space for the impedance conversion cable can be absorbed by utilizing the thickness of the insulation base.
Extremely small and thin.

さらに、絶縁基根に被るされた導電層から電極および支
持リングの形成が可能となって、構成部品の寸沫精麿の
向1−および気密化を図ることが可能となり、特性が安
定するうえプリント基板の利用が可能であることから極
めてωに性に優れている。
Furthermore, it is possible to form electrodes and support rings from the conductive layer that covers the insulating base, making it possible to improve the dimensions of the component parts and to make them airtight, resulting in stable characteristics and Since it is possible to use a printed circuit board, it has excellent resistance to ω.

また、絶縁赫根の下面にも導電層を形成した両面プリン
ト基板を利用すれば、絶lid 444jAの(ζ而(
ご出力電極やアース電極等の外部出力電極を形成で・き
るのC1インピーダンス変換素子のシールドか可能とな
るばかりか、トランスジ」−サを電子機器、例えばポー
タプルカセットテープレコーダ等に取付(]る場合には
、その回路基根に直接接続可能となって電f機器への実
装能率も大幅に向上し、電子機器の小形化に大きく奇J
3する。
In addition, if you use a double-sided printed circuit board with a conductive layer formed on the underside of the insulating layer, you can completely eliminate the lid 444jA (ζ
By forming external output electrodes such as output electrodes and ground electrodes, it is not only possible to shield the C1 impedance conversion element, but also when installing the transducer in electronic equipment, such as portable cassette tape recorders. It has become possible to connect directly to the circuit base, greatly improving mounting efficiency in electronic devices, and making a huge difference in the miniaturization of electronic devices.
Do 3.

なお、本発明のトランスジコーリは、高分子誘電体層を
固定電極に形成する構成に限らり振動11Qに形成する
構成においても実施iiJ能(・あり、電極と振動膜を
組合せたトランスジコーりに広二実施可能である。
It should be noted that the trans-dielectric of the present invention is limited to the configuration in which the polymer dielectric layer is formed on the fixed electrode, and can also be implemented in the configuration in which it is formed in the vibration 11Q. It is possible to implement Hiroji.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は従来のトシンスジ、 −IJを示
す縦断面図および分解斜視図、第:3図おJ、び第4図
は本発明のトランスジコーりの一実施例を示す縦断面図
および底面図、第3)図−第33図は第3図に示す本発
明のトランスジ1−1ノの製造/J法の一実施例を示す
T程図である。 1・・・・・・・・・・・・電 極 2・・・・・・・・・・・・高分子誘電体層3・・・・
・・・・・・・・固定電極 4・・・・・・・・・・・・基 台 5・・・・・・・・・・・・スペーサリング6・・・・
・・・・・・・・振動膜 7・・・・・・・・・・・・膜リング 8・・・・・・・・・・・・インピーダンス変換系子1
6・・・・・・・・・・・・絶縁基根17・・・・・・
・・・・・・支持層(支持リング)20・・・・・・・
・・・・・出力電極(外部出力電極)21・・・・・・
・・・・・・I−スミ極(外部出力電極)23・・・・
・・・・・・・・収納部 24.25・・・′4電層 26・・・・・・・・・・・・両面プリント基板代理人
弁理十   須 山 佐 − 第3図 IU 第4図 第5園 \\ゝ 8 ##へ□ 一下 ト21 と 16 〜21 16 21
FIGS. 1 and 2 are longitudinal cross-sectional views and exploded perspective views of a conventional transducer strip, -IJ, and FIGS. Figures, bottom views, and Figures 3-33 are T diagrams showing an embodiment of the J method for manufacturing the transformer 1-1 of the present invention shown in Figure 3. 1... Electrode 2... Polymer dielectric layer 3...
......Fixed electrode 4...Base 5...Spacer ring 6...
..... Vibration membrane 7 ..... Membrane ring 8 ..... Impedance conversion system element 1
6・・・・・・・・・Insulation base 17・・・・・・
......Support layer (support ring) 20...
...Output electrode (external output electrode) 21...
...I-Sumi pole (external output electrode) 23...
......Storage section 24.25...'4Electric layer 26...Double-sided printed circuit board attorney Patent attorney Jusu Yamasa - Figure 3 IU No. 4 Figure 5th Garden \\ゝ8 ##へ□ Ichigeto 21 and 16 ~ 21 16 21

Claims (1)

【特許請求の範囲】[Claims] 絶縁基板」二に電極を形成し、この電極の前面に所定の
間隔を隔て(振動膜を張架するとともに、前記電極にイ
ンピーダンス変換素子の入力端子を接続してなるトラン
スジューサにおいて、前記インピーダンス変換素子が前
記絶縁基板に設けた収納部に収納されてなることを特徴
とするトランスジューサ。
In a transducer, an electrode is formed on an insulating substrate, a vibrating membrane is stretched over the front surface of the electrode at a predetermined distance, and an input terminal of an impedance conversion element is connected to the electrode. is housed in a housing provided in the insulating substrate.
JP9201882A 1982-05-29 1982-05-29 Transducer Pending JPS58209294A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9201882A JPS58209294A (en) 1982-05-29 1982-05-29 Transducer
GB08314336A GB2122842B (en) 1982-05-29 1983-05-24 An electroacoustic transducer and a method of manufacturing an electroacoustic transducer
DE19833319311 DE3319311A1 (en) 1982-05-29 1983-05-27 ELECTROACOUSTIC CONVERTER AND METHOD FOR THE PRODUCTION THEREOF
KR1019830002371A KR860000640B1 (en) 1982-05-29 1983-05-28 A electric acoustic converter
US06/499,555 US4621171A (en) 1982-05-29 1983-05-31 Electroacoustic transducer and a method for manufacturing thereof
US06/636,740 US4615105A (en) 1982-05-29 1984-08-01 Electroacoustic transducer and a method for manufacturing thereof
SG94/86A SG9486G (en) 1982-05-29 1986-02-01 An electroacoustic transducer and a method of manufacturing an electroacoustic transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9201882A JPS58209294A (en) 1982-05-29 1982-05-29 Transducer

Publications (1)

Publication Number Publication Date
JPS58209294A true JPS58209294A (en) 1983-12-06

Family

ID=14042787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9201882A Pending JPS58209294A (en) 1982-05-29 1982-05-29 Transducer

Country Status (1)

Country Link
JP (1) JPS58209294A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251800A (en) * 1984-05-29 1985-12-12 Matsushita Electric Ind Co Ltd Electret condenser microphone with leg
EP1065912A2 (en) * 1999-07-01 2001-01-03 Aoi Electronics Co., Ltd. Electro-magnetic microphone
JP2004222091A (en) * 2003-01-16 2004-08-05 Citizen Electronics Co Ltd Electret condenser microphone

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251800A (en) * 1984-05-29 1985-12-12 Matsushita Electric Ind Co Ltd Electret condenser microphone with leg
EP1065912A2 (en) * 1999-07-01 2001-01-03 Aoi Electronics Co., Ltd. Electro-magnetic microphone
EP1065912A3 (en) * 1999-07-01 2004-09-29 Aoi Electronics Co., Ltd. Electro-magnetic microphone
JP2004222091A (en) * 2003-01-16 2004-08-05 Citizen Electronics Co Ltd Electret condenser microphone

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