JPS58204870A - Glass ceramic composition - Google Patents
Glass ceramic compositionInfo
- Publication number
- JPS58204870A JPS58204870A JP57086510A JP8651082A JPS58204870A JP S58204870 A JPS58204870 A JP S58204870A JP 57086510 A JP57086510 A JP 57086510A JP 8651082 A JP8651082 A JP 8651082A JP S58204870 A JPS58204870 A JP S58204870A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- ceramic composition
- glass ceramic
- composition
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明はガラス・セラミ、り組成物、特に、電子部品搭
載基板用のガラス セラミ、り組成物ンこ係る。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a glass/ceramic composition, and particularly to a glass/ceramic composition for electronic component mounting substrates.
（２）従来技術と問題点
電子部品において、素子間の配線が複雑になると多くの
交差が必要になり、これを処理する技術として多層配線
が発達い今日も開発が進められている。特にセラミック
基板内に導体を埋込んだ多１−配線方式は、制圧が向く
、分布谷ｋが小さく憬械的・熱的強度が犬で、表面の凹
凸ヤそりも少なく、基本的には層数の制約もないなどの
優れた特長があり、複雑な混成ＩＣやＬＳＩ用として最
も注目されている。(2) Prior Art and Problems In electronic components, when wiring between elements becomes complicated, many intersections are required, and multilayer wiring has been developed as a technology for handling this problem, and its development is still progressing today. In particular, the multi-wiring method in which the conductor is embedded in the ceramic substrate is suitable for pressure control, has a small distribution valley k, has excellent mechanical and thermal strength, has few surface irregularities, and basically has a layered structure. It has excellent features such as no restrictions on numbers, and is attracting the most attention for use in complex hybrid ICs and LSIs.
このセラミック多層配線基板用のセラミック材料として
、今日では専らアルミナ（Ａｔ２０ｘ、通常９ Ｑ ｗ
ｔ％を越える純度）が利用されている。その理由は機械
的・熱的強度、熱伝導率等の特性が優れているからであ
るが、誘電率が高いので（９２チＡｔ２０．で約１０．
５）、基板寸法を大きくし、又層数′１に増加する場合
、実質的な配線長さの増大に伴ない、その静電容量が無
視できなくなり、高速回路用に適さなくなるという問題
がある。Today, alumina (At20x, usually 9 Q w
(purity greater than t%) is utilized. The reason for this is that it has excellent properties such as mechanical and thermal strength and thermal conductivity, but it also has a high dielectric constant (approximately 10.
5) When the board size is increased and the number of layers is increased to '1', there is a problem that the capacitance cannot be ignored due to the substantial increase in wiring length, making it unsuitable for high-speed circuits. .
この静電容量の問題は特に多層配線基板において着しい
問題であるが、必ずしもその場合に限られるものではな
いことは明らかであろう。Although this capacitance problem is particularly serious in multilayer wiring boards, it is clear that it is not necessarily limited to such cases.
（３）発明の目的
本発明に、以上の如き従来技術に鑑み、誘電率の低い電
子部品搭載用セラミック質（ガラス・セラミック）基板
を得るために、機械的・熱的強度その他の一般的特性の
ほか、特ＶＣ１低い一亀率を角するセラミ、り゛Ｌ１絹
成物酸物ラス セラミ、り組成物）（ｃ−提供すること
を目的としている。(3) Purpose of the Invention In view of the above-mentioned prior art, the present invention provides a ceramic (glass/ceramic) substrate with low dielectric constant for mounting electronic components that has mechanical, thermal strength and other general properties. In addition, it is intended to provide a ceramic acid lath ceramic composition (C-L1 silk composition) (c-) which exhibits a particularly low VC1 rate.
（４）発明の構成
そして、本発明は上記目的を達成するためＶＣ１化学組
成が５ｉ０２４５〜６５ ｗｔ％、Ｍに０８〜２５ｗｔ
％、及びＣａＯｌ ８〜５５ ｗｔ％からなる５ｉ０２
− ＭｇＯ−Ｃｐ、Ｏガラス３ （１〜８０ ｗｔ％々
、Ａｔ２０５２１１〜７０ｗｔ％ とからなることを峙
似とするガラス・セラミ、り組成物を提供する。(4) Structure of the invention In order to achieve the above object, the present invention has a VC1 chemical composition of 5i0245 to 65 wt% and M of 08 to 25 wt%.
%, and 5i02 consisting of 8-55 wt% CaOl
- To provide a glass/ceramic composition comprising MgO-Cp, O glass 3 (1 to 80 wt%) and At205211 to 70 wt%.
すなわち、本発明は、Ａｚ２ｏ５は強度は尚いが誘電率
も大きく、他力ガラスは強度にないが＠電率は低いので
、こｔｌらを適当に組み合わＶることによって、強度、
誘電率ともにｔ’ｆｉ Ａな／ｆガラスセラミック組成
物を得ること番目晒み１．ｆ（７てそれ１′′
を実際に町有七に１７だものである。ヒｄ己ＳｉＯン一
〜Ｉｇ（ＪＣａＯ糸がラスハ個当な融Ｔｈ（１：＜ｏｏ
℃ｉ１１ ｔｋ ）のガラスを得るという四点から選択
しｋものである。That is, in the present invention, Az2o5 has high strength but high dielectric constant, and transparent glass has low strength but low electric constant, so by appropriately combining these elements, strength,
Obtaining a glass-ceramic composition with a dielectric constant of t'fi A/f Explanation 1. f (7 and 1'' is actually 17 in town.
℃i11 tk ) is selected from four points.
壕だ、ガラスとＡｚ２ｏ３との組成比ｔま、本発明の［
４的に好適なガラス セラミ、りｍ１４成物をｂえると
いう四点から、実験により決定した。本発明に依るガラ
ス セラミック組成物の微視的構造は、概念的に言うと
、組成にも依るが、アルミナ（ｐ、ｔ２ｎｓ ＞の粒間
をガラスが埋めているものである。However, the composition ratio of glass and Az2O3 of the present invention is
This was determined through experiments based on the four points of finding a suitable glass, ceramic, and resin composition. Conceptually speaking, the microscopic structure of the glass-ceramic composition according to the present invention is such that glass fills the spaces between grains of alumina (p, t2ns>), depending on the composition.
以下、本発明の実施例に基づいて詳しく説明する。Hereinafter, the present invention will be described in detail based on embodiments.
（５）発明の実施例
８１０２４５．８ ｗｔ％、ＭｇＣＯ３１３，３ｗｔ％
、及びＣａＣＯ３４０，９ｗｔチを白金ルッゲ中で約１
４５０℃に加熱溶融し、急冷して５ｉ０２６１ ｗＩｉ
％、ＭｇＯ８，５ｗｔ％、及びＣａＯ３０，５ｗｔ％ノ
８１０２− ＭｇＯ−ＣａＯガラスをつくり、平均粒径
数μｍに微粉砕ｔ７、以下の実験におけるガラス原料と
した。(5) Invention Example 810245.8 wt%, MgCO313.3 wt%
, and CaCO340.9wt in platinum Rugge about 1
Melt by heating to 450°C and rapidly cool to 5i0261 wIi
%, MgO 8.5 wt %, and CaO 30.5 wt % 8102-MgO--CaO glass was made and pulverized to an average particle size of several μm at t7, which was used as a glass raw material in the following experiment.
上記ガラス１７５０．！ｉ’とＡｚ２ｏ３ （平均粒径
数１ｔｍ）１７５０ｐとをパイン□ダ（ブチラール）、
可？ Ｍｌｌ、＼、
１１１１！１膠剤、溶剤（メタノール）とともに湿式ミ
リングし、ドクターブレード法で幅１００ｗｎ、厚さ０
、７ ｖｔｍのシート状に成形］〜、乾燥した後、平坦
部から６０ｍ０のシートを打ち抜いた。このシートを３
枚ルね−ｃ１温１＝Ｊ ５０℃、圧ノ月ｔ） Ｏｋｙ、
’−２で約５分間処理しで−・体化し槓１ｍ）Ｌ、それ
を還ｌ〔雰囲気の電気炉で焼１１νＬ７ｆｃ ｏこの焼
成処理＆Ｕ、図に示す如く、初め１００℃為の速度で昇
温し、約９００〜ＩＪＯＱ’Ｃに達し走ら、その副夏に
約５時間保持することによって融解しまた）ガラス中か
ら４１磯成分、炭素分を元金に消失させ、そノ１から再
び１（）０℃屑の床１扛で昇棉し、約１２５Ｌｌ 〜＋
４ｏ（＋【゛に約５時間保持ｌ−で焼結させ、ｔしてｌ
５ｆｌ Ｌ、、／時の速度で徐冷し、ｆｃ、焼成後の
寸法は約５０ｍ’、厚さ約１．５嘔であ、−、た。The above glass 1750. ! i' and Az2o3 (average particle diameter number 1tm) 1750p and pine □da (butyral),
Possible? Mll, \, 1111!1 Wet milled with glue and solvent (methanol), and used the doctor blade method to obtain a width of 100wn and a thickness of 0.
, 7 vtm] After drying, a 60 m0 sheet was punched out from the flat part. This sheet 3
Sheet rune - c1 temperature 1 = J 50℃, pressure month t) OK,
'-2 for about 5 minutes, and then boiled in an electric furnace in an atmosphere of 11νL7fco. It was heated to about 900 to IJOQ'C, and in the second summer, it was held for about 5 hours to melt it.) The 41 iso components and carbon content in the glass disappeared into the base metal, and the 1 () 125Ll ~+
Sinter at 4o
It was slowly cooled at a rate of 5 fl L/hr, and the dimensions after firing were approximately 50 m' and approximately 1.5 mm thick.
こうして傅たガラス セラミ、り組成物にっし・て、Ｊ
ＩＳ規格に基−づさ、ｆｉ８ ｆＷ率、熱伝２４率、糊
に’ｊＭ率（２５Ｃ〜１ｔＪＯｃの平均）、体１ｋ ｕ
Ｌ ｒＡ、、及び曲げ強ｊ暮を測定し７に０
１プ上と同４求にＬ７て、但しガラスとＡｔ２０５
とりえｄ＋戊のみを変えて、能のｌ＝：施割及び比較例
のガラス・化ラミ、り組成物を作成し、そｔＩらの喝性
１１７１を測定した。結果を表にまとめて示す。In this way, the glass/ceramic composition was made by J.
Based on IS standard, fi8 fW rate, heat transfer rate 24, glue 'jM rate (average of 25C to 1tJOc), body 1k u
L rA, and bending strength were measured and L7 was measured on 7.
Vitrified laminated resin compositions of comparative examples were prepared by changing only d+d and d, and the strength 1171 of them was measured. The results are summarized in a table.
六から明らかなように、アルミ六２０〜７（１ｗｔ４文
びがラス３１＋〜Ｈ（Ｉ ｗｔ％ からなるものＶ（−
お・いて、−電率を低くシく と−５，０−７，６）、
か′）亡σ・他の特性においても七分に（４足できるガ
ラス セラミック組成ｖＩを得ることができた。As is clear from 6, aluminum 620~7 (1wt4 text is made of lath 31+~H(I wt% V(-
Then, - lower the electric rate and -5,0-7,6),
We were able to obtain a glass-ceramic composition vI that was 70% (4 times better) in terms of loss σ and other properties.
（６）発明の効果
以上の説明から明らかな通り、本発明（Ｃｄ＜るガラス
セラミック組成物に依り、防電率が低く、多１−配線
基板等ＶＣおける。靜電容ｌｌ１ｒ増加に帰因する両速
性能の劣化を防市した配線基板材料が蝉供され、基板の
面積及びｊ−数の増加を促進することができる。(6) Effects of the Invention As is clear from the above explanation, the present invention (Cd) has a low electrical resistance due to the glass-ceramic composition, and can be used in VCs such as multi-wiring boards. A wiring board material that prevents deterioration of performance at both speeds is provided, and it is possible to increase the area and number of boards.
添付図面は不発、明の実施例において採用した焼結のた
めの温度処理のｌロフ、イルケノバーす図である。The attached drawings are diagrams of the temperature treatment for sintering employed in the embodiments of the present invention.
Claims (1)
８〜２５ ｗｔチ、及びＣａＯ１８〜５５ｗｔチからな
る５１０２− ＭｇＯ−ＣａＯガラス３０〜８０ｗｔ％
ｇ、Ａｚ２ｏ５２０〜７０ ｗｔ％ とからなることを
％徴どするガラス・セラミ、り組成物。l Chemical composition is 840245-65 wt%, Mg0
5102-MgO-CaO glass 30-80 wt% consisting of 8-25 wt-chi and CaO 18-55 wt-chi
A glass/ceramic composition comprising 520 to 70 wt% of Az2O.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086510A JPS58204870A (en) | 1982-05-24 | 1982-05-24 | Glass ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086510A JPS58204870A (en) | 1982-05-24 | 1982-05-24 | Glass ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58204870A true JPS58204870A (en) | 1983-11-29 |
Family
ID=13888972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57086510A Pending JPS58204870A (en) | 1982-05-24 | 1982-05-24 | Glass ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58204870A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226454A (en) * | 1984-04-24 | 1985-11-11 | 太陽誘電株式会社 | Insulative ceramic composition |
| JPS60260465A (en) * | 1984-06-01 | 1985-12-23 | 鳴海製陶株式会社 | Low temperature burnt ceramic |
| JPS61274397A (en) * | 1985-05-30 | 1986-12-04 | 株式会社住友金属セラミックス | Low temperature baked ceramic substrate and manufacture thereof |
| JPS62117393A (en) * | 1985-11-16 | 1987-05-28 | 鳴海製陶株式会社 | Low temperature sintered ceramics multilayer circuit substrate |
| JPS63295473A (en) * | 1987-05-27 | 1988-12-01 | Shoei Kagaku Kogyo Kk | Dielectric material for circuit board |
-
1982
- 1982-05-24 JP JP57086510A patent/JPS58204870A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226454A (en) * | 1984-04-24 | 1985-11-11 | 太陽誘電株式会社 | Insulative ceramic composition |
| JPS60260465A (en) * | 1984-06-01 | 1985-12-23 | 鳴海製陶株式会社 | Low temperature burnt ceramic |
| JPH0353269B2 (en) * | 1984-06-01 | 1991-08-14 | Narumi China Corp | |
| JPS61274397A (en) * | 1985-05-30 | 1986-12-04 | 株式会社住友金属セラミックス | Low temperature baked ceramic substrate and manufacture thereof |
| JPH0224038B2 (en) * | 1985-05-30 | 1990-05-28 | Narumi China Corp | |
| JPS62117393A (en) * | 1985-11-16 | 1987-05-28 | 鳴海製陶株式会社 | Low temperature sintered ceramics multilayer circuit substrate |
| JPH0240229B2 (en) * | 1985-11-16 | 1990-09-10 | Narumi China Corp | |
| JPS63295473A (en) * | 1987-05-27 | 1988-12-01 | Shoei Kagaku Kogyo Kk | Dielectric material for circuit board |
| JPH0457627B2 (en) * | 1987-05-27 | 1992-09-14 | Shoei Kagaku Kogyo Kk |
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