JPS5820449B2 - photoelectron emission cathode - Google Patents

photoelectron emission cathode

Info

Publication number
JPS5820449B2
JPS5820449B2 JP52080478A JP8047877A JPS5820449B2 JP S5820449 B2 JPS5820449 B2 JP S5820449B2 JP 52080478 A JP52080478 A JP 52080478A JP 8047877 A JP8047877 A JP 8047877A JP S5820449 B2 JPS5820449 B2 JP S5820449B2
Authority
JP
Japan
Prior art keywords
mixed crystal
wavelength
container
emission cathode
composition ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52080478A
Other languages
Japanese (ja)
Other versions
JPS5416171A (en
Inventor
中山雅夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Terebi KK
Original Assignee
Hamamatsu Terebi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Terebi KK filed Critical Hamamatsu Terebi KK
Priority to JP52080478A priority Critical patent/JPS5820449B2/en
Publication of JPS5416171A publication Critical patent/JPS5416171A/en
Publication of JPS5820449B2 publication Critical patent/JPS5820449B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 真空紫外線領域ニオいて特定の波長より長波長側の光を
遮断するフィルタは存在しない。
DETAILED DESCRIPTION OF THE INVENTION There is no filter that blocks light with wavelengths longer than a specific wavelength in the vacuum ultraviolet region.

このため従来は、真空紫外線の検出に際して、検出され
る光の長波長側検出端の波長を任意に選定することが不
可能であった。
For this reason, conventionally, when detecting vacuum ultraviolet rays, it has been impossible to arbitrarily select the wavelength of the long wavelength side detection end of the detected light.

従って本発明は真空紫外線に感度を有し、かつその分光
感度曲線における長波長側の端部を所望の波長とするこ
とにより、任意の波長範囲の紫外線を検出し得るように
したものである。
Therefore, the present invention is sensitive to vacuum ultraviolet rays and can detect ultraviolet rays in any wavelength range by setting the longer wavelength end of the spectral sensitivity curve to a desired wavelength.

第1図は本発明実施例の光電子放出陰極1を具備した光
電管の一例を示したもので、円筒状の真空ガラス容器2
の端部に金属環3を封着し、該金属iK弗化マグネシウ
ム(Mg F2 )よりなる紫外線透通窓4を封着しで
ある。
FIG. 1 shows an example of a phototube equipped with a photoelectron emitting cathode 1 according to an embodiment of the present invention, in which a cylindrical vacuum glass container 2
A metal ring 3 is sealed to the end of the metal ring 3, and an ultraviolet transmitting window 4 made of the metal iK magnesium fluoride (Mg F2) is sealed.

この容器内にニッケルのような導電性基板5を前記窓4
と対向するように配置して、その表面に臭化カリウムと
塩化カリウムとの混晶よりなる薄層6を形成し、該基板
5を導入線7によって容器外に導き出しである。
Inside this container, a conductive substrate 5 such as nickel is placed on the window 4.
A thin layer 6 made of a mixed crystal of potassium bromide and potassium chloride is formed on the surface of the substrate 5, and the substrate 5 is led out of the container through an introduction wire 7.

また前記窓4の内面にはメツシュ状の陽極8を添着して
、この陽極を前記金属環3に接続しである。
Further, a mesh-shaped anode 8 is attached to the inner surface of the window 4, and this anode is connected to the metal ring 3.

更に容器2内には前記混晶の薄層6を蒸着するためのタ
ングステンコイルよりなる蒸着源9および該蒸着源の窓
側を覆う遮蔽板10な設げて、上記コイルの両端を導入
線11,12で容器2の外部へ導き出しである。
Further, in the container 2, a vapor deposition source 9 made of a tungsten coil for vapor depositing the thin layer 6 of the mixed crystal and a shielding plate 10 covering the window side of the vapor deposition source are provided, and both ends of the coil are connected to lead-in wires 11, 12 is a guide to the outside of the container 2.

すなわち薄層6が紫外線に感度を有する光電面を形成す
るもので、臭化カリウムと塩化カリウムとの混晶の組成
比をXとするとKBrxCe(x−1)で表わされ、X
の値によって分光感度曲線の長波長側端部の位置が定ま
る。
That is, the thin layer 6 forms a photocathode sensitive to ultraviolet rays, and if the composition ratio of the mixed crystal of potassium bromide and potassium chloride is X, it is expressed as KBrxCe (x-1), and
The value of determines the position of the long wavelength end of the spectral sensitivity curve.

上述のような光電管の製作に際しては、例えば臭化カリ
ウム38gと塩化カリウム11gとを石英管に入れて1
0 トール以下に排気し、かつ400℃に加熱して上記
石英管を排気系から封じ切る。
When manufacturing a phototube as described above, for example, 38 g of potassium bromide and 11 g of potassium chloride are placed in a quartz tube.
The quartz tube is evacuated to 0 Torr or less and heated to 400°C to seal off the quartz tube from the exhaust system.

その石英管を更に800℃まで加熱して臭化カリウムお
よび塩化カリウムを真空中で溶解したのち室温まで冷却
すると透明度の高い混晶KBro、7CeO03が得ら
れる。
The quartz tube is further heated to 800° C. to dissolve potassium bromide and potassium chloride in vacuum, and then cooled to room temperature to obtain highly transparent mixed crystals KBro, 7CeO03.

すなわち組成比Xが0.7の混晶であるが、これを石英
管から取出し、その少量な蒸着源のタングステンコイル
中に入れて第1図のように容器2内に封入する。
That is, the mixed crystal having a composition ratio X of 0.7 is taken out from the quartz tube, placed in a tungsten coil serving as a small amount of vapor deposition source, and sealed in a container 2 as shown in FIG.

この容器の排気口13を鎖線のように排気系に連結して
、10−7 トールまで排気し、抵抗14を介して導入
線11,12を電源15に接続することによりコイルK
N流を流して混晶に含まれたガスを充分に排出させる。
The exhaust port 13 of this container is connected to the exhaust system as shown by the chain line to exhaust the air to 10-7 Torr, and the lead-in wires 11 and 12 are connected to the power source 15 via the resistor 14 to coil K.
A flow of N is applied to sufficiently discharge the gas contained in the mixed crystal.

また金属環3と導入線7との間に直流tE源16および
電流計17を接続して、蒸着源9に流す電流を徐々に増
大することにより基板5の上に臭化カリウムと塩化カリ
ウムとの混晶を蒸着して薄層6を形成する。
Further, by connecting a DC tE source 16 and an ammeter 17 between the metal ring 3 and the lead-in wire 7, and gradually increasing the current flowing through the evaporation source 9, potassium bromide and potassium chloride are deposited on the substrate 5. A thin layer 6 is formed by depositing a mixed crystal of .

同時に窓4から基板;5の表面に紫外線を照射して、電
流計17で光電流を観測し、その光電流が極大値を通り
越したとき蒸着を中止して排気系から容器2を切り取る
At the same time, the surface of the substrate 5 is irradiated with ultraviolet light through the window 4, the photocurrent is observed with an ammeter 17, and when the photocurrent exceeds the maximum value, the deposition is stopped and the container 2 is cut out from the exhaust system.

第2図はこのよ5にして作られた光電子放出陰極の分光
感度曲線で、横軸に光の波長λを、縦軸1が、その極大
部分における感度は例えば0.1電子/光子程度である
Figure 2 shows the spectral sensitivity curve of the photoelectron-emitting cathode prepared in this way. be.

上記分光感度曲線の長波長端aは150 nmであり、
また短波長端すは窓4を形成した弗化マグネシウムの透
過率特性によって定まるもので113 nmである。
The long wavelength end a of the above spectral sensitivity curve is 150 nm,
The short wavelength end is determined by the transmittance characteristics of the magnesium fluoride forming the window 4, and is 113 nm.

すなわち上記長波長端aの波長が臭化力、リウムと塩化
カリウムとの混晶の組成比Xによって定まるもので、こ
の組成比Xが0.7の場合は上述のように150nmで
あるが、その値によって鎖線のように変化する。
That is, the wavelength of the long wavelength end a is determined by the bromide power and the composition ratio X of the mixed crystal of lithium and potassium chloride, and when this composition ratio X is 0.7, it is 150 nm as described above, It changes depending on the value as shown by the chain line.

第3図はこの関係を示したもので、横軸に分光感度曲線
の長波長端の波長λを、また縦軸に組成比Xをとっであ
る。
FIG. 3 shows this relationship, with the horizontal axis representing the wavelength λ at the long wavelength end of the spectral sensitivity curve, and the vertical axis representing the composition ratio X.

点線は上述のように組成比Xが0.7の場合であるが、
この組成比Xと長波長端の波長λとの間には図のような
直線関係があって、Xが1すなわち臭化カリウムのみの
場合は155nm、xが0すなわち塩化カリウムのみの
場合は140 nmである。
The dotted line is for the case where the composition ratio X is 0.7 as mentioned above,
There is a linear relationship between this composition ratio X and the wavelength λ at the long wavelength end, as shown in the figure. It is nm.

上述のように本発明の光電子放出陰極は導電性基板上に
臭化カリウムと塩化カリウムとの混晶よりなる薄層を形
成したもので、その混晶の組成比を変化することによっ
て分光感度曲線の長波長端k 140 nmから155
nmの間の任意の値にすることができる。
As mentioned above, the photoelectron emitting cathode of the present invention has a thin layer made of a mixed crystal of potassium bromide and potassium chloride formed on a conductive substrate, and the spectral sensitivity curve can be adjusted by changing the composition ratio of the mixed crystal. Long wavelength end k 140 nm to 155
It can be any value between nm.

従ってこの値を所望の波長に選定することにより短波長
側を遮断する紫外線フィルタとの併用により、紫外線領
域における任意の波長範囲の光を選択的に検出し得るも
のである。
Therefore, by selecting this value to a desired wavelength and using it in conjunction with an ultraviolet filter that blocks short wavelengths, it is possible to selectively detect light in any wavelength range in the ultraviolet region.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の光電子放出陰極を具備した光電
管の縦断面図、第2図は第1図の光電管の分光感度曲線
、第3図は本発明の陰極を形成する混晶の組成比と分光
感度曲線の長波長端との関係を示した線図である。 なお図において、1は光電子放出陰極、5はその基板、
6は混晶の薄層、8は陽極である。
FIG. 1 is a longitudinal cross-sectional view of a phototube equipped with a photoelectron emitting cathode according to an embodiment of the present invention, FIG. 2 is a spectral sensitivity curve of the phototube shown in FIG. 1, and FIG. 3 is a composition of a mixed crystal forming the cathode of the present invention. FIG. 3 is a diagram showing the relationship between the ratio and the long wavelength end of the spectral sensitivity curve. In the figure, 1 is a photoelectron emitting cathode, 5 is its substrate,
6 is a thin layer of mixed crystal, and 8 is an anode.

Claims (1)

【特許請求の範囲】[Claims] 1 導電性の基板上に臭化カリウムと塩化カリウムとの
混晶よりなる薄層を形成したことを特徴とする光電子放
出陰極。
1. A photoelectron emitting cathode characterized in that a thin layer made of a mixed crystal of potassium bromide and potassium chloride is formed on a conductive substrate.
JP52080478A 1977-07-07 1977-07-07 photoelectron emission cathode Expired JPS5820449B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52080478A JPS5820449B2 (en) 1977-07-07 1977-07-07 photoelectron emission cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52080478A JPS5820449B2 (en) 1977-07-07 1977-07-07 photoelectron emission cathode

Publications (2)

Publication Number Publication Date
JPS5416171A JPS5416171A (en) 1979-02-06
JPS5820449B2 true JPS5820449B2 (en) 1983-04-23

Family

ID=13719370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52080478A Expired JPS5820449B2 (en) 1977-07-07 1977-07-07 photoelectron emission cathode

Country Status (1)

Country Link
JP (1) JPS5820449B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160216A (en) * 1984-01-30 1985-08-21 Idec Izumi Corp Contactless relay device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012108198B4 (en) 2012-09-04 2016-05-25 Windmöller & Hölscher Kg Device for extracting waste products of a production machine with a suction element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160216A (en) * 1984-01-30 1985-08-21 Idec Izumi Corp Contactless relay device

Also Published As

Publication number Publication date
JPS5416171A (en) 1979-02-06

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