JPS58201377A - Solar battery element - Google Patents
Solar battery elementInfo
- Publication number
- JPS58201377A JPS58201377A JP57084343A JP8434382A JPS58201377A JP S58201377 A JPS58201377 A JP S58201377A JP 57084343 A JP57084343 A JP 57084343A JP 8434382 A JP8434382 A JP 8434382A JP S58201377 A JPS58201377 A JP S58201377A
- Authority
- JP
- Japan
- Prior art keywords
- type
- light
- area
- photo acceptance
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000007772 electrode material Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241001494479 Pecora Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】 本発明は太陽電池素子の構造に関する。[Detailed description of the invention] The present invention relates to the structure of a solar cell element.
従来の太陽電池素子はその構造′ｆｒ第１図に示すよう
に、受光面の格子状電極１Ｐ−Ｎ接合表面に、例えば、
蒸着により設けたものが一般的であった。As shown in FIG. 1, the structure of a conventional solar cell element is shown in FIG.
Those provided by vapor deposition were common.
第１図において１は例えばＰ型の薄層で、他極性會もつ
例えば、ｎ型の基板２０表面に例えば、熱拡散によシ設
ける。３はＰ−Ｎ接合を示し、４は受光面の表面に例え
ば蒸着により設けた格子状集電電極、きらに１′は受光
面を示し、光電変換に有効な領域である。また５は、裏
面電極を示す。In FIG. 1, reference numeral 1 denotes a thin layer of, for example, P-type, which is provided on the surface of a substrate 20 of, for example, N-type, having a different polarity, for example, by thermal diffusion. Reference numeral 3 indicates a P-N junction, 4 a grid-like collector electrode provided on the surface of the light-receiving surface by, for example, vapor deposition, and 1' the light-receiving surface, which is an effective area for photoelectric conversion. Further, 5 indicates a back electrode.
第１図において入射した元は、受光面１′の領域におい
てのみ光電変換に寄与し１発生した電子。In FIG. 1, the incident electrons contribute to photoelectric conversion only in the region of the light-receiving surface 1' and are generated.
正孔は％Ｐ−ｎｆｌ！合により蛋シ分けられ、電極４お
よび５に外部回路を接続することにより外部回路に電力
を供給することが可能となる。他方、受光面電極４に入
射した光はその大部分は反射してしまい発電には寄与で
きない、従って、該受光面電極の面積は狭いほど光電ｆ
換に対しては好ましいが逆に受光面電極の面積を狭くす
ればこれに伴って、直列抵抗が増大し、太陽電池の性能
を極端に低下させる゛原因となった。即ち、従来の方法
によれば、太陽電池の性能を維持するために、太陽電池
の受光面面積の最少でも約１０係を犠牲にして受光面電
極を設ける必賛があったため、太陽電池素子の実質的な
変換効率全制限してしまうという大きな欠点があった。The hole is %P-nfl! By connecting an external circuit to the electrodes 4 and 5, power can be supplied to the external circuit. On the other hand, most of the light incident on the light-receiving surface electrode 4 is reflected and cannot contribute to power generation. Therefore, the smaller the area of the light-receiving surface electrode, the more the photoelectric power
However, if the area of the light-receiving surface electrode is made narrower, the series resistance increases, causing an extreme decrease in the performance of the solar cell. That is, according to the conventional method, in order to maintain the performance of the solar cell, it was necessary to sacrifice at least about 10 parts of the light-receiving surface area of the solar cell to provide the light-receiving surface electrode. This has a major drawback in that it completely limits the actual conversion efficiency.
本発明の目的は、かかる従来の欠点を除き、太陽電池素
子の受光面面積ｔ−最大として、光電変換効率の高い太
陽電池素子′ｔ−提供することにある。An object of the present invention is to eliminate such conventional drawbacks and provide a solar cell element 't- that has a maximum light-receiving surface area t- and high photoelectric conversion efficiency.
本発明の特徴は、シリコンを用いた基金型太陽電池素子
において、受光面の格子状糸″−電極を光の進行方向に
対して、受光面表面のＰ−Ｎ接合面より後となる様段差
金つけて変体的に配置し、かつ、前記受光面表面のＰ−
Ｎ接合面を、前記格子状集電電極に対して少くとも重な
る様に配置した太−電池水子にある。A feature of the present invention is that in a foundation-type solar cell element using silicon, there is a step difference in the lattice-like threads on the light-receiving surface so that the electrodes are located behind the P-N junction surface on the light-receiving surface with respect to the traveling direction of light. P- on the surface of the light-receiving surface.
The N junction surface is arranged so as to overlap at least the grid-like current collecting electrode.
第２図に本発明の一実施例を示す。FIG. 2 shows an embodiment of the present invention.
第２図において、１は例えば、ｎ型基本２の表１＆？：
設けた例えばＰ型の薄層、３はＰ−ｎ接合を示し４は本
発明の特徴である、表面Ｐ−ｎ接合よりもＦ都に設けた
格子状表面電極、また５は＊ｒｋ１電極で、受光面１′
は格子状表面電極と重なり合うよう格子状表面電極配＊
部分を表面に近づくほど狭ばめるような例えば逆台形を
とっている０本構成において表面電極は、受光面に対し
て下部になりているため、入射光を妨げることなく所要
の面積で設けることが可能であり、かつ受光面全表面電
極に電な９合うに設けているｋめ回−太陽電池素子面積
で、従来と比較した場合には有効受光面積を大きくとれ
るというｄｆｊ徴τもつ。さらに、受光面と表面電極と
に段差を設は九結果、Ｐ−ｎ撤合の面積が増加すること
になシ、それに伴って光電変換効率を向上することが可
能である。In FIG. 2, 1 is, for example, n-type basic 2 Table 1&? :
For example, a P-type thin layer is provided, 3 is a P-n junction, 4 is a lattice-like surface electrode provided on the F side rather than a surface P-n junction, which is a feature of the present invention, and 5 is an *rk1 electrode. , light-receiving surface 1'
The grid-like surface electrode arrangement* overlaps with the grid-like surface electrode.
In a 0-wire configuration in which the portion narrows closer to the surface, for example an inverted trapezoid, the surface electrode is located at the bottom of the light-receiving surface, so it is provided with the required area without interfering with the incident light. It also has the dfj characteristic that the effective light-receiving area can be increased when compared with the conventional method, with the area of the solar cell element being provided on the electrodes on the entire surface of the light-receiving surface. Furthermore, as a result of providing a step between the light receiving surface and the surface electrode, the area of P-n withdrawal does not increase, and the photoelectric conversion efficiency can be improved accordingly.
また、第３図（ａ）〜（ｄ）に本発明の一実施例の装造
工程を工程順に示す、第３図（ａ）は基板２、例えばｎ
形シリコン基板を示す、第３図（ｂｌは基板上に、例え
ばれ形部分２′會例えば気相成長法により選択的に成長
させた状態管示す。なお２′は選択エツチングによって
も形成可能であることは説明を要さないであろう、第３
図（Ｃ）”Ｕ、例えば、熱拡散により例えばＰ形の薄層
１を形成せしめ、裏面のＰ型薄層を除去した状態を示す
。さらに、第３図゛（ｄ）は例えばペースト状の電極材
料を充てんして。Further, FIGS. 3(a) to 3(d) show the mounting process of an embodiment of the present invention in order of process. FIG. 3(a) shows the substrate 2, for example, n
FIG. 3 shows a shaped silicon substrate (bl is a state tube in which, for example, a curved portion 2' is selectively grown on the substrate by, for example, a vapor phase growth method. Note that 2' can also be formed by selective etching. Some things probably don't need explanation, the third one.
Figure (C) ``U'' shows a state in which, for example, a P-type thin layer 1 is formed by thermal diffusion, and the P-type thin layer on the back side is removed. Fill with electrode material.
受光面電極４を形成せしめ、また、裏面電極５１ｒ形成
して太陽電池素子全完成した状Ｊｉ！Ｉ’ｉ示す。The light-receiving surface electrode 4 is formed, and the back surface electrode 51r is formed to complete the solar cell element! I'i show.
以上説明したように、本発明によれば、同一面積をもつ
、シリコン基板を用いて、有効受光面積を従来の方法に
比べて大幅に拡大すること力（でき、従って単位面積当
たりの光電変換効率全向上せしめた太陽電池素子が得ら
れることは明らかであろう。As explained above, according to the present invention, it is possible to significantly expand the effective light-receiving area compared to the conventional method using a silicon substrate with the same area (therefore, the photoelectric conversion efficiency per unit area can be increased). It will be clear that a completely improved solar cell element can be obtained.
第１図は従来の実施例を示す部分断面図、第２図は本発
明の一実施例を示す部分断面図、第３図（ａ）〜（ｄ）
は本発明の一実施例の製造工程をその工程順に示す工程
図、である。
なお図において、
１・・・・・・ｎまたはＰ形薄層、１′・・・・・・有
効受光面、２・・・・・・Ｐまたはｎ形基板、３・・・
・・・ｐ−ｎ接合、４・・・・・・受光面電極、５・・
・・・・裏面電極、である。
矛、ｌ 目
羊２ 圓
５
第３閃Fig. 1 is a partial sectional view showing a conventional embodiment, Fig. 2 is a partial sectional view showing an embodiment of the present invention, and Figs. 3 (a) to (d).
1 is a process diagram showing the manufacturing process of an embodiment of the present invention in the order of the process. In the figure, 1...N or P type thin layer, 1'...Effective light receiving surface, 2...P or N type substrate, 3...
... p-n junction, 4 ... light-receiving surface electrode, 5 ...
... Back electrode. Spear, l Eye sheep 2 En 5 3rd flash
Claims (1)
の格子状集電電極を元の入射方向に対して受光面表面の
Ｐ−Ｎ接合面より後となる様に段差をつけて立体的に配
置し、かつ前記受光面表面のＰ−Ｎ接合面を前記格子状
集電電極に対して少くとも重なる様に配置したことを特
徴とする太陽電池素子。In a junction type solar cell element using silicon, the grid-like current collecting electrode on the light-receiving surface is arranged three-dimensionally with a step so that it is behind the P-N junction plane on the light-receiving surface with respect to the original incident direction. A solar cell element characterized in that the P-N junction surface of the light-receiving surface is arranged so as to at least overlap with the grid-like current collecting electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57084343A JPS58201377A (en) | 1982-05-19 | 1982-05-19 | Solar battery element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57084343A JPS58201377A (en) | 1982-05-19 | 1982-05-19 | Solar battery element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58201377A true JPS58201377A (en) | 1983-11-24 |
Family
ID=13827857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57084343A Pending JPS58201377A (en) | 1982-05-19 | 1982-05-19 | Solar battery element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201377A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615584A (en) * | 1984-03-26 | 1986-01-11 | ユニサ−チ リミテツド | Electric semiconductor |
| JP2006054374A (en) * | 2004-08-13 | 2006-02-23 | Shin Etsu Handotai Co Ltd | Manufacturing method of solar battery and solar battery |
| JP2006066802A (en) * | 2004-08-30 | 2006-03-09 | Shin Etsu Handotai Co Ltd | Solar cell and method for manufacturing the same |
| WO2009081684A1 (en) * | 2007-12-25 | 2009-07-02 | Sharp Kabushiki Kaisha | Photoelectric conversion device and method for manufacturing photoelectric conversion device |
| JP2010519732A (en) * | 2007-02-15 | 2010-06-03 | マサチューセッツ インスティテュート オブ テクノロジー | Solar cell with uneven surface |
| JP2010225977A (en) * | 2009-03-25 | 2010-10-07 | Mitsubishi Electric Corp | Solar battery module |
-
1982
- 1982-05-19 JP JP57084343A patent/JPS58201377A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615584A (en) * | 1984-03-26 | 1986-01-11 | ユニサ−チ リミテツド | Electric semiconductor |
| JPH08191152A (en) * | 1984-03-26 | 1996-07-23 | Unisearch Ltd | Solar cell and manufacture of solar cell |
| JP2006054374A (en) * | 2004-08-13 | 2006-02-23 | Shin Etsu Handotai Co Ltd | Manufacturing method of solar battery and solar battery |
| JP4526902B2 (en) * | 2004-08-13 | 2010-08-18 | 信越半導体株式会社 | Manufacturing method of solar cell |
| JP2006066802A (en) * | 2004-08-30 | 2006-03-09 | Shin Etsu Handotai Co Ltd | Solar cell and method for manufacturing the same |
| JP2010519732A (en) * | 2007-02-15 | 2010-06-03 | マサチューセッツ インスティテュート オブ テクノロジー | Solar cell with uneven surface |
| US8569099B2 (en) | 2007-02-15 | 2013-10-29 | Massachusetts Institute Of Technology | Enhanced methods for fabricating solar cells with textured surfaces |
| WO2009081684A1 (en) * | 2007-12-25 | 2009-07-02 | Sharp Kabushiki Kaisha | Photoelectric conversion device and method for manufacturing photoelectric conversion device |
| JP2009158575A (en) * | 2007-12-25 | 2009-07-16 | Sharp Corp | Photoelectric conversion device and method for manufacturing photoelectric conversion device |
| JP2010225977A (en) * | 2009-03-25 | 2010-10-07 | Mitsubishi Electric Corp | Solar battery module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4053327A (en) | Light concentrating solar cell cover | |
| JP5036157B2 (en) | Solar cell module | |
| US20120085397A1 (en) | Solar cell | |
| JPH10117004A (en) | Converging type solar battery element | |
| JP4781074B2 (en) | Solar cell module | |
| JP5328996B2 (en) | SOLAR BATTERY CELL, SOLAR BATTERY MODULE AND SOLAR CELL LEAD JOIN | |
| JPH0595125A (en) | Photoelectric conversion element | |
| JPS636158B2 (en) | ||
| JPS58201377A (en) | Solar battery element | |
| JP2007281530A (en) | Solar battery module | |
| JP4942324B2 (en) | Solar cell module | |
| JP2003224289A (en) | Solar cell, method for connecting solar cell, and solar cell module | |
| JP2866982B2 (en) | Solar cell element | |
| JP2006013173A (en) | Solar cell module | |
| TW201431108A (en) | A process of manufacturing an interdigitated back-contact solar cell | |
| JPH0745850A (en) | Solar battery module | |
| JPH11135812A (en) | Formation method for solar cell element | |
| JP6820435B2 (en) | P-type PERC double-sided solar cell effective for absorption of sunlight and its manufacturing method | |
| JPH09148600A (en) | Solar battery and its manufacture | |
| JP2009158697A (en) | Bypass diode for solar cell and method of manufacturing the same | |
| WO2013069492A1 (en) | Bypass diode | |
| JP2000164903A (en) | Solar battery | |
| JPS5915085Y2 (en) | solar cells | |
| KR102157599B1 (en) | Solar cell module | |
| JP2997366B2 (en) | Solar cell element |