JPS58197644A - Electron microscope and its similar device - Google Patents
Electron microscope and its similar deviceInfo
- Publication number
- JPS58197644A JPS58197644A JP57080714A JP8071482A JPS58197644A JP S58197644 A JPS58197644 A JP S58197644A JP 57080714 A JP57080714 A JP 57080714A JP 8071482 A JP8071482 A JP 8071482A JP S58197644 A JPS58197644 A JP S58197644A
- Authority
- JP
- Japan
- Prior art keywords
- objective lens
- sample
- electrode
- detector
- deceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 31
- 230000005684 electric field Effects 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 abstract description 19
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000005685 electric field effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/266—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy
- H01J37/268—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、電子顕微鏡およびその類似装置に関する。[Detailed description of the invention] The present invention relates to electron microscopes and similar devices.
一般に、電子顕微鏡を用いて試料の電位を測定する場合
、試料から発生する２次電子に試料の電位情報が含まれ
ていることに着目して、１ｋＶ〜数１０ｋＶに加速され
た電子線を試料上に照射し、この試料から発生する２次
電子のエネルギーを検出することが行なわれている。Generally, when measuring the potential of a sample using an electron microscope, focusing on the fact that secondary electrons generated from the sample contain information about the sample's potential, an electron beam accelerated to 1 kV to several tens of kV is applied to the sample. The energy of secondary electrons generated from this sample is detected by irradiating the sample.
ところで、近年電子顕微鏡を用いてＬＳＩを動作させな
がら、このＬＳＩの微細パターン上の各点の電位変化を
検出するために、試料からの２次電子に引出し電場を与
える引出し電極と。By the way, in recent years, in order to detect potential changes at each point on a fine pattern of an LSI while operating an LSI using an electron microscope, an extraction electrode is used to apply an extraction electric field to secondary electrons from a sample.
引き出された２次電子をエネルギーの大きさに応じて選
別する減速電極とを組合わせた。いわゆるエネルギーフ
ィルタを使用することが提案されている。It is combined with a deceleration electrode that sorts the extracted secondary electrons according to their energy levels. It has been proposed to use so-called energy filters.
しかし、この場合は、試料がＬＳＩであるため、表面の
帯電や破損を避ける意味で、加速電圧を２ ｋＶ以下に
する必要があり、更に試料への入射電流を１００９Ａ程
度にする必要がある。However, in this case, since the sample is an LSI, the accelerating voltage needs to be 2 kV or less in order to avoid surface charging and damage, and the current incident on the sample needs to be about 1009 A.
また、ＬＳＩパターンが微細であるため、電子線を十分
集束させる必要もある。Furthermore, since the LSI pattern is minute, it is necessary to sufficiently focus the electron beam.
しかしながら、従来のこの種の電子顕微鏡では、引出し
電極および減速電極のいずれもが単に対物レンズの外側
に設けられているため、対物レンズと試料表面とを近づ
けることができず、これにより対物レンズの縮小率をあ
げることができないので、大きな電流を細く集束させに
くいという問題点がある。However, in conventional electron microscopes of this type, both the extraction electrode and the deceleration electrode are simply provided outside the objective lens, making it impossible to bring the objective lens and the sample surface close together. Since it is not possible to increase the reduction ratio, there is a problem in that it is difficult to focus a large current into a narrow one.
また、２次電子検出器を最良の位置に置くことも難しく
、これＫより検出効率の低下を招いて、十分な精度の測
定を行なうことができないという問題点もある。Furthermore, it is difficult to place the secondary electron detector in the best position, which leads to a lower detection efficiency and a problem in that measurement cannot be performed with sufficient precision.
本発明は、これらの問題点を解決しようとするもので、
引出し電極と減速電極とを所定の位置関係で対物レンズ
内に配設することにより、対物レンズの縮小率をあげる
ことができるようにするとともに、検出器を最良の位置
において検出効率をあげることができるようにした、電
子顕微鏡およびその類似装置を提供することを目的とす
る。The present invention aims to solve these problems.
By arranging the extraction electrode and the deceleration electrode within the objective lens in a predetermined positional relationship, it is possible to increase the reduction ratio of the objective lens and to increase the detection efficiency by placing the detector in the best position. The purpose of the present invention is to provide an electron microscope and similar devices that can perform the following tasks.
このため１本発明の電子顕微鏡およびその類似装置は、
試料へ通じる荷電粒子線通路を有する対物レンズと、同
対物レンズの上方に配設された検出器とをそなえるとと
もに、上記試料からの２次電子に対し引出し電場を与え
る引出し電極と、上記２次電子の選別を行なう減速電極
とをそなえ、上記の引出し電極と減速電極とが、上記対
物レンズ内の上記荷電粒子線通路に配設され、且つ、上
記引出し電極が上記試料に近接して設けられるとともに
、上記減速電極が上記引出し電極から離隔した上記検出
器寄りの位置に設けられたことを特徴としている。For this reason, 1 the electron microscope and similar devices of the present invention:
It includes an objective lens having a charged particle beam path leading to the sample, a detector disposed above the objective lens, an extraction electrode that applies an extraction electric field to secondary electrons from the sample, and an extraction electrode that applies an extraction electric field to the secondary electrons from the sample. A deceleration electrode for sorting electrons is provided, the extraction electrode and the deceleration electrode are arranged in the charged particle beam passage within the objective lens, and the extraction electrode is provided close to the sample. Additionally, the deceleration electrode is provided at a position separated from the extraction electrode and closer to the detector.
以下、図面により本発明の一実施例としての走査型電子
顕微鏡について説明すると、第１図はその全体構成を説
明するための模式図、第２図はその要部を拡大して示す
模式図であって、この顕微鏡では、上から順に、電子銃
１、第１および第２コンデンサレンズ２，３ならびに対
物レンズ４が配設されており、対物レンズ４の下極面か
ら例えば１１１１１位下方へ離隔した場所に、回路パタ
ーン５ａを有するＬＳＩ試料５が配設されるようになっ
ている。Below, a scanning electron microscope as an embodiment of the present invention will be explained with reference to the drawings. Fig. 1 is a schematic diagram for explaining its overall configuration, and Fig. 2 is a schematic diagram showing an enlarged view of its main parts. In this microscope, an electron gun 1, first and second condenser lenses 2 and 3, and an objective lens 4 are arranged in order from the top, and are spaced downward by, for example, about 11111 points from the lower pole surface of the objective lens 4. An LSI sample 5 having a circuit pattern 5a is disposed at that location.
また、対物レンズ４の上方には、試料５へ入射された荷
電粒子線としての電子線Ｂに基づき試料５から発生する
２次電子１１．１２を検出するための検出器６が設けら
れている。Further, above the objective lens 4, a detector 6 is provided for detecting secondary electrons 11 and 12 generated from the sample 5 based on the electron beam B as a charged particle beam incident on the sample 5. .
なお、検出器６は、シンチレータ６ａ、フォトガイド６
ｂ、フォトマルチプライアロｃおよび前置増幅器６ｄを
そなえており、その出力側は、図示しない増幅器を介し
てＣＲＴ （陰極線管）モニターに接続されている。Note that the detector 6 includes a scintillator 6a and a photoguide 6.
b, a photomultiplier array c, and a preamplifier 6d, the output side of which is connected to a CRT (cathode ray tube) monitor via an amplifier (not shown).
また、対物レンズ４は、ＬＳＩ試料５へ通じる電子線通
路（荷電粒子線通路）１３をそなえており、この対物レ
ンズ４内の電子線通路１３には、引出しグリッド（引出
し電極）８および減速グリッド（減速電極）７が配設さ
れている。The objective lens 4 also has an electron beam path (charged particle beam path) 13 leading to the LSI sample 5, and the electron beam path 13 in the objective lens 4 includes an extraction grid (extraction electrode) 8 and a deceleration grid. (Deceleration electrode) 7 is provided.
引出しグリッド８は、ＬＳＩ試料５の表面電位測定の際
に生じる局所電界効果（隣接配線の電位変化の影響をい
う。）を防止するために。The extraction grid 8 is provided to prevent local electric field effects (referring to the effects of potential changes of adjacent wiring) that occur when measuring the surface potential of the LSI sample 5.
ＬＳＩ試料５上に例えばプラス数１００ Ｖ ／ｎ＋程
度の強さの２次電子引出し電場を与えるためのもので、
ＬＳＩ試料５に近接して設けられる。This is for applying a secondary electron extraction electric field with a strength of, for example, about 100 V/n+ to the LSI sample 5.
It is provided close to the LSI sample 5.
すなわち、引出しグリッド８は、対物レンズ内の電子線
通路１３の下端部に設けられている。That is, the extraction grid 8 is provided at the lower end of the electron beam passage 13 within the objective lens.
また、引出しグリッド８は、絶縁クリップｌＯによって
、対物レンズ４に対し着脱自在に設けられている。Further, the drawer grid 8 is detachably attached to the objective lens 4 using an insulating clip lO.
減速グリッド７は、所定の電位を印加することにより、
所定のエネルギーをもった２次電子だけを選別して検出
器６側へ通過させるためのもので、引出しグリッド８か
ら離隔した検出器６側の対物レンズ内電子線通路１３に
設けられている。By applying a predetermined potential to the deceleration grid 7,
This is for selecting only secondary electrons with a predetermined energy and passing them to the detector 6 side, and is provided in the electron beam passage 13 in the objective lens on the detector 6 side, which is separated from the extraction grid 8.
なお、この減速グリッド７には１例えばθ〜マイナス数
１０Ｖの電位が印加されるようになっており、この減速
グリッド７に例えば−１ＯＶの電位を与えた場合は、−
１ＯｅＶ未満のエネルギーをもつ２次電子１１’が減速
グリッド７の電場をこえることを阻止することができ、
このような電場をこえることのできない２次電子１１’
はグリッド面で引き戻されて減速グリッド下方のアース
電位壁に流れるようになっている。Note that a potential of 1, for example, θ to minus several tens of volts is applied to this deceleration grid 7, and when a potential of, for example, -1OV is applied to this deceleration grid 7, -
Secondary electrons 11' having an energy of less than 1 OeV can be prevented from exceeding the electric field of the deceleration grid 7,
Secondary electrons 11' that cannot overcome such an electric field
is pulled back at the grid plane and flows to the ground potential wall below the deceleration grid.
すなわち、この場合は一１ＯｅＶ以上のエネルギーをも
つ２次電子１２だけがグリッド電場をこえて選別され、
検出器６へ入力されるのである。That is, in this case, only the secondary electrons 12 with energy of -1 OeV or more are selected by crossing the grid electric field,
It is input to the detector 6.
また、減速グリッド７も、絶縁クリップ９によって、対
物レンズ４に対し着脱自在に設けられている。Further, the deceleration grid 7 is also detachably attached to the objective lens 4 using an insulating clip 9.
さらに、図示しないが、引出しグリッド８および減速グ
リッド７へは、これらのグリッド７゜８への供給電位を
コントロールする電源付きのコントロールユニットが接
続されている。Furthermore, although not shown, a control unit with a power source is connected to the drawer grid 8 and the deceleration grid 7 to control the potential supplied to these grids 7.8.
上述の構成により、電子銃１から発せられた電子線Ｂは
、第１および第２コンデンサレンズ２．３で集束された
のち、対物レンズ４で焦点合わせを行なわれて、ＬＳＩ
試料５の回路パターン５ａ上に照射され、更に電子線Ｂ
は図示しない偏向部材によって試料表面を走査せしめら
れる。With the above-mentioned configuration, the electron beam B emitted from the electron gun 1 is focused by the first and second condenser lenses 2.3, and then focused by the objective lens 4.
The circuit pattern 5a of the sample 5 is irradiated, and the electron beam B
is caused to scan the sample surface by a deflection member (not shown).
そして、電子線Ｂが試料表面に照射されると、ＬＳＩ試
料５から試料電位情報を有する２次電子１１が飛び出し
、検出器６による例えば＋１０ｋＶの電位により、この
２次電子１１は対物レンズ４内の電子線通路１３を通っ
て上方へ進み検出器６内に入力される。なお、このよう
にして検出される２次電子１１は、マイナス数１０ｅＶ
以上のエネルギーをもつものである。Then, when the electron beam B is irradiated onto the sample surface, secondary electrons 11 having sample potential information jump out from the LSI sample 5, and due to a potential of, for example, +10 kV from the detector 6, these secondary electrons 11 enter the objective lens 4. The electron beam passes upward through the electron beam path 13 and is input into the detector 6. Note that the secondary electrons 11 detected in this way have a voltage of minus several 10 eV.
It has more energy than that.
このとき、引出しグリッド８による引出し電場もかかつ
ているので、局所電界効果が防止されながら、２次電子
１１が電子線通路１３内へ引き込まれてゆく。この引出
しグリッド８の作用により測定精度が向上するのである
。At this time, since the extraction electric field by the extraction grid 8 is also applied, the secondary electrons 11 are drawn into the electron beam path 13 while local electric field effects are prevented. The effect of this drawer grid 8 improves measurement accuracy.
また、減速グリッド７によって所定のエネルギーをもつ
２次電子１２のみが選別されて、減速グリッド７を通過
するので、得たいエネルギーをもつ２次電子１２のみを
対物レンズ上方の検出器６へ入力することができる。In addition, only the secondary electrons 12 having a predetermined energy are selected by the deceleration grid 7 and pass through the deceleration grid 7, so that only the secondary electrons 12 having the desired energy are input to the detector 6 above the objective lens. be able to.
このようにして、入力された２次電子１２は、シンチレ
ータ６ａからフォトガイド６ｂを経てフォトマルチプラ
イアロＣへ導かれ、その後は映像信号として前置増幅器
６ｄおよび他の増幅器を経てＣＲＴモニターへ供給され
て、このＣＲＴモニター画面上で試料５上の所要の回路
パターン５ａを映し出すのである。In this way, the input secondary electrons 12 are guided from the scintillator 6a through the photoguide 6b to the photomultiplier ARO C, and then supplied as a video signal to the CRT monitor via the preamplifier 6d and other amplifiers. Then, the required circuit pattern 5a on the sample 5 is displayed on this CRT monitor screen.
なお、本発明は、電子顕微鏡に適用できるほか、これに
類似する装置にも適用できる。Note that the present invention is applicable not only to electron microscopes but also to devices similar thereto.
以上詳述したように、本発明の電子顕微鏡およびその類
似装置によれば、引出し電極および減速電極が所定の配
置関係を有して対物レンズ内に配設することにより、対
物レンズの近傍に試料を配置できるほか、検出器も最良
の位置に配置できるので、次のような効果ないし利点が
得られる。As described in detail above, according to the electron microscope and similar devices of the present invention, the extraction electrode and the deceleration electrode are arranged in the objective lens in a predetermined arrangement relationship, so that the sample is placed near the objective lens. In addition to being able to place the detector in the best position, the following effects and advantages can be obtained.
（１）例えば２ ｋＶ以下の低加速電圧の電子線によっ
て、試料を照射した場合でも、分解能のよい対物レンズ
を使用して、その縮小率を上げることができるため、外
部磁界による電子線の変動を少なくすることができ、更
に試料電流を太き（とりながら十分細く絞った電子線を
試料上に照射することもできる。(1) For example, even when a sample is irradiated with an electron beam with a low accelerating voltage of 2 kV or less, it is possible to increase the reduction rate by using an objective lens with good resolution, so that fluctuations in the electron beam due to external magnetic fields can be avoided. Furthermore, it is possible to irradiate the sample with a sufficiently narrow electron beam while maintaining a large sample current.
（２）２次電子の検出効率を向上できるため、精度の高
い試料の電位測定が行なえる。(2) Since the detection efficiency of secondary electrons can be improved, the potential of the sample can be measured with high precision.
（３）引出し電極や減速電極を対物レンズ外部に配設す
る場合に比べ、全体をコンパクトに構成できる。(3) The entire structure can be made more compact than when the extraction electrode and deceleration electrode are disposed outside the objective lens.
（４）引出し電極や減速電極を対物レンズに対し着脱自
在に設けることもできるため、試料に最適の引出し電極
や減速電極を選んで対物レンズに取付けることができ、
適用範囲を拡げることができる。(4) Since the extraction electrode and deceleration electrode can be attached to and removed from the objective lens, the extraction electrode and deceleration electrode that are most suitable for the sample can be selected and attached to the objective lens.
The scope of application can be expanded.
図は本発明の一実施例としての走査型電子顕微鏡を示す
もので、第１図はその全体構成を説明するための模式図
、第２図はその要部を拡大して示す模式図である。
１・・電子銃、２ｔ３・・コンデンサレンズ、４・・対
物レンズ、５・−試料、５ａ・・回路パターン％６・・
検出器、６ａ・・シンチレータ、６ｂ・・フォトガイド
、６ｃ・・フォトマルチプライア、６ｄ・・前置増幅器
、７・・減速グリッド（減速電極）、８・・引出しグリ
ッド（引出し電極）、９，１ｏ・・絶縁クリップ、１１
．１１’、１２・・２次電子、１３・・電子線通路（荷
電粒子線通路）、Ｂ・・電子線（荷電粒子線）。
代理人 弁理士 飯 沼 義 彦
第１図
＼Ｖ／Ａ−１
区 区〜２
〒５The drawings show a scanning electron microscope as an embodiment of the present invention. Fig. 1 is a schematic diagram for explaining its overall configuration, and Fig. 2 is a schematic diagram showing an enlarged view of its main parts. . 1... Electron gun, 2t3... Condenser lens, 4... Objective lens, 5... Sample, 5a... Circuit pattern %6...
Detector, 6a...Scintillator, 6b...Photo guide, 6c...Photomultiplier, 6d...Preamplifier, 7...Deceleration grid (deceleration electrode), 8...Extraction grid (extraction electrode), 9, 1o...Insulating clip, 11
．． 11', 12... Secondary electron, 13... Electron beam path (charged particle beam path), B... Electron beam (charged particle beam). Agent Patent Attorney Yoshihiko Iinuma Figure 1\V/A-1 Ward Ward ~ 2 〒5
Claims (2)
と、同対物レンズの上方に配設された検出器とをそなえ
るとともに、上記試料からの２次電子に対し引出し電場
を与える引出し電極と、上記２次電子の選別を行なう減
速電極とをそなえ、上記の引出し電極と減速電極とが、
上記対物レンズ内の上記荷電粒子線通路に配設され、且
つ、上記引出し電極が上記試料に近接して設けられると
ともに、上記減速電極が上記引出し電極から離隔した上
記検出器寄りの位置に設けられたことを特徴とする、電
子顕微鏡およびその類似装置。(1) An extraction electrode that includes an objective lens having a charged particle beam path leading to the sample and a detector disposed above the objective lens, and that applies an extraction electric field to secondary electrons from the sample; and a deceleration electrode for sorting the secondary electrons, and the extraction electrode and the deceleration electrode
The charged particle beam path is disposed in the objective lens, and the extraction electrode is provided close to the sample, and the deceleration electrode is provided at a position away from the extraction electrode and closer to the detector. An electron microscope and its similar devices, characterized by:
されている特許請求の範囲第１項に記載の電子顕微鏡お
よびその類似装置。(2) The electron microscope and its similar devices according to claim 1, wherein the extraction electrode and the deceleration electrode are configured to be detachable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57080714A JPS58197644A (en) | 1982-05-13 | 1982-05-13 | Electron microscope and its similar device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57080714A JPS58197644A (en) | 1982-05-13 | 1982-05-13 | Electron microscope and its similar device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58197644A true JPS58197644A (en) | 1983-11-17 |
Family
ID=13726006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57080714A Pending JPS58197644A (en) | 1982-05-13 | 1982-05-13 | Electron microscope and its similar device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58197644A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6095843A (en) * | 1983-10-28 | 1985-05-29 | Hitachi Ltd | Electron beam equipment |
| JPS61288358A (en) * | 1985-06-14 | 1986-12-18 | 株式会社アドバンテスト | Spectrometer objective lens apparatus for quantitative potential measurement |
| US4728790A (en) * | 1985-06-14 | 1988-03-01 | Siemens Aktiengesellschaft | Low-abberation spectrometer objective with high secondary electron acceptance |
| US4864228A (en) * | 1985-03-15 | 1989-09-05 | Fairchild Camera And Instrument Corporation | Electron beam test probe for integrated circuit testing |
| EP0440901A2 (en) * | 1990-01-10 | 1991-08-14 | ICT Integrated Circuit Testing Gesellschaft für HalbleiterprÀ¼ftechnik mbH | Ion beam apparatus as well as a process to perform potential measurements by means of an ion beam |
| JPH05500132A (en) * | 1989-08-31 | 1993-01-14 | ベル コミュニケーションズ リサーチ インコーポレーテッド | Electron microscope with asymmetric immersion lens |
| EP1049132A1 (en) * | 1999-03-31 | 2000-11-02 | Advantest Corporation | Method and apparatus for imaging a surface potential |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5714438B2 (en) * | 1977-05-25 | 1982-03-24 |
-
1982
- 1982-05-13 JP JP57080714A patent/JPS58197644A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5714438B2 (en) * | 1977-05-25 | 1982-03-24 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6095843A (en) * | 1983-10-28 | 1985-05-29 | Hitachi Ltd | Electron beam equipment |
| JPH0572054B2 (en) * | 1983-10-28 | 1993-10-08 | Hitachi Ltd | |
| US4864228A (en) * | 1985-03-15 | 1989-09-05 | Fairchild Camera And Instrument Corporation | Electron beam test probe for integrated circuit testing |
| JPS61288358A (en) * | 1985-06-14 | 1986-12-18 | 株式会社アドバンテスト | Spectrometer objective lens apparatus for quantitative potential measurement |
| US4728790A (en) * | 1985-06-14 | 1988-03-01 | Siemens Aktiengesellschaft | Low-abberation spectrometer objective with high secondary electron acceptance |
| JPH05500132A (en) * | 1989-08-31 | 1993-01-14 | ベル コミュニケーションズ リサーチ インコーポレーテッド | Electron microscope with asymmetric immersion lens |
| EP0440901A2 (en) * | 1990-01-10 | 1991-08-14 | ICT Integrated Circuit Testing Gesellschaft für HalbleiterprÀ¼ftechnik mbH | Ion beam apparatus as well as a process to perform potential measurements by means of an ion beam |
| EP1049132A1 (en) * | 1999-03-31 | 2000-11-02 | Advantest Corporation | Method and apparatus for imaging a surface potential |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| McMullan | An improved scanning electron microscope for opaque specimens | |
| US6583413B1 (en) | Method of inspecting a circuit pattern and inspecting instrument | |
| US6259094B1 (en) | Electron beam inspection method and apparatus | |
| US5408098A (en) | Method and apparatus for detecting low loss electrons in a scanning electron microscope | |
| US4292519A (en) | Device for contact-free potential measurements | |
| JPH06132002A (en) | Scanning electron microscope | |
| EP0113746B1 (en) | An elektrode system of a retarding-field spectrometer for a voltage measuring electron beam apparatus | |
| EP0767482B1 (en) | Particle-optical apparatus comprising a detector for secondary electrons | |
| US7612336B2 (en) | Scanning electron microscope having a monochromator | |
| JP2019035744A (en) | Diffraction pattern detection in transmission type charged particle microscope | |
| US3717761A (en) | Scanning electron microscope | |
| JP2632808B2 (en) | Spectrometer objective lens device for quantitative potential measurement | |
| KR20020026468A (en) | Charged particle device | |
| US4922097A (en) | Potential measurement device | |
| JPS58197644A (en) | Electron microscope and its similar device | |
| JPH08138611A (en) | Charged particle beam device | |
| JPH09283072A (en) | Secondary charged particle detecting method, its system, and ion beam machining device | |
| JP3343421B2 (en) | Charged particle beam equipment | |
| JP2002025492A (en) | Method and apparatus for imaging sample using low profile electron detector for charged particle beam imaging system containing electrostatic mirror | |
| JPS6360543A (en) | Method and apparatus for testing samples without charging | |
| JP2560271B2 (en) | Scanning electron microscope | |
| JPS63119147A (en) | Focus condition detecting device of changed corpuscular beams | |
| JP2001167725A (en) | Spectrometer object lens of particle beam measuring apparatus | |
| JPS6364255A (en) | Particle beam radiating device | |
| JPH0636730A (en) | Charged beam device |