JPS58194237A - Scanning type electron microscope - Google Patents

Scanning type electron microscope

Info

Publication number
JPS58194237A
JPS58194237A JP7597382A JP7597382A JPS58194237A JP S58194237 A JPS58194237 A JP S58194237A JP 7597382 A JP7597382 A JP 7597382A JP 7597382 A JP7597382 A JP 7597382A JP S58194237 A JPS58194237 A JP S58194237A
Authority
JP
Japan
Prior art keywords
signal
secondary electron
low frequency
correction
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7597382A
Other languages
Japanese (ja)
Inventor
Yoshiaki Goto
後藤 善朗
Akio Ito
昭夫 伊藤
Yasuo Furukawa
古川 泰男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7597382A priority Critical patent/JPS58194237A/en
Publication of JPS58194237A publication Critical patent/JPS58194237A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To secure a uniform image on the same condition, by cutting a secondary electron signal into two separate portions, low frequency and high frequency, while installing a signal correction device regulating the high frequency portion according to the magnitude of the low frequency portion and thereby forming the image with the corrected signal. CONSTITUTION:A signal correction device 4 for turning a detection secondary electron signal S2 into a correction secondary electron signal S3 for correction is installed in addition. This correction device 4 is fitted with a low-pass filter 42 which passes only a delay circuit 41 having the signal S2 delayed for the specified time long and a low frequency constitutent and calculates a difference between a delay signal S41 and a low frequency signal S42 with a differential amplification circuit 43. On the other hand, also it calculates a difference between a reference level signal S45 of the specified voltage value and the low frequency signal S42 with a differential amplifier 46, then amplifies a high frequency signal S43 with an amplifier 44 in accordance with a gain correction signal S46 out of this differential amplifier 46 and transmits the correction secondary electron signal S3 to a display unit 3. With this, a uniform image can be secured by using the secondary electron signal uninfluenced by any external cause.

Description

【発明の詳細な説明】 fil  発明の技術分野 本発明は走査形電子−倣鏡の信号処理装置に関する。[Detailed description of the invention] fil Technical field of invention The present invention relates to a signal processing device for a scanning electronic mirror mirror.

(2)技術の背景 走査形電子−微疵(以下SEMと称す)は、物体の表面
検査、物体の組成分析、半導体デ・1イスの特性を測定
する電子ビームグローピングなどに用いられている。
(2) Background of the technology Scanning electron micro-defect (hereinafter referred to as SEM) is used for surface inspection of objects, compositional analysis of objects, and electron beam groping for measuring the characteristics of semiconductor devices. .

このようなSEMの用途において、分解能の向上、得ら
れた信号の信頼性の向上などが要求されている。
In such applications of SEM, improvements in resolution, reliability of obtained signals, etc. are required.

(3)従来技術と問題点 第1図に従来のSEMの概略的な構成を示す。(3) Conventional technology and problems FIG. 1 shows a schematic configuration of a conventional SEM.

SEMIは、高圧電源を電子銃に印加させて電子ビーム
を発生させ、該電子ビームを電子レンズで収束させ、該
収束電子ビームをステージ上の試料に照射する。このと
き試料表面から発生する二次電子をシンチレータ/光/
譬イデ/光電子増倍管から構成される検出器を用いて電
気信号に変換し検出二次電子信号S2が得られる。この
検出二次電子信号S2は、試料表面の凹凸、組成または
電位の変化に対応して変化するという性質を有している
In SEMI, a high-voltage power source is applied to an electron gun to generate an electron beam, the electron beam is focused by an electron lens, and a sample on a stage is irradiated with the focused electron beam. At this time, the secondary electrons generated from the sample surface are
The detected secondary electron signal S2 is obtained by converting it into an electrical signal using a detector composed of a photomultiplier tube. This detected secondary electron signal S2 has the property of changing in response to changes in the unevenness, composition, or potential of the sample surface.

検出二次電子信号S2を、電子ビームによる試別表面走
査を制御するXY偏向信号発生装置2からの偏向信号S
1と同期して動作する観測用の表水装置3に印加するこ
とにより、陰極線管などの表示装置3の画面上に凹凸、
組成または電位の変化を示す画像が得られる3、 しかしながら前−述の従来のSEMには、電子ビームの
変動、試料を載せるステージの移動、ア・臂−チャー状
態の変動による光重の全体的な低下または部分的な光量
むらが生じることにより1画面全体の画像が同一条件に
おける他の場合と相異なるまたは1画面上で、部分的に
むらが生じるという問題点がある。
The detected secondary electron signal S2 is converted into a deflection signal S from the XY deflection signal generator 2 that controls the scanning of the sample surface by the electron beam.
By applying the voltage to the observation surface water device 3 that operates in synchronization with 1, unevenness and unevenness are created on the screen of the display device 3 such as a cathode ray tube.
Images showing changes in composition or potential can be obtained.3 However, the conventional SEM described above has problems with the overall light weight due to fluctuations in the electron beam, movement of the stage on which the sample is placed, and fluctuations in the arm and arm conditions. There is a problem in that, due to a significant decrease or partial unevenness in the amount of light, the entire image on one screen may be different from other cases under the same conditions, or unevenness may occur partially on one screen.

このように同一条件において均一な画像が得られないと
いうことが、観測者の誤判断を招く又は観測能力を低下
させるという二次的な問題点を生んでいる。
The fact that a uniform image cannot be obtained under the same conditions causes a secondary problem in that the observer misjudges or deteriorates the observation ability.

(4)発明の目的 本発明の目的は、電子ビームの変動などの外的原因によ
る雑音成分が重畳された二次電子信号から雑音成分を除
去しかつ雑音成分にもとづいて補正し、外的原因に依存
されない二次電子信号を用いて画像を形成させる走査形
電子顕微鏡装置を提供することにある。
(4) Purpose of the Invention The purpose of the present invention is to remove noise components from a secondary electronic signal on which noise components due to external causes such as fluctuations in an electron beam are superimposed, and to perform correction based on the noise components. An object of the present invention is to provide a scanning electron microscope device that forms an image using a secondary electron signal that is not dependent on secondary electron signals.

(5)  発明の構成 本発明においては、試料に電子ビームを照射し放出され
る二次電子を検出し検出された二次電子18号を用いて
画像を形成させる走査形電子顕微鏡装置において、前記
二次電子信号を低周波成分信号と高周波成分信号に分a
t、、該低周波成分信号の大きさに応じて該高周波成分
信号の大きさを曹節する信号補正装置を設け、該信号補
正装置で補正した二次電子信号を用いて画像を形成させ
るよ〜うにしたことを特徴とする走査形電子顕微鏡装置
が提供される。
(5) Structure of the Invention In the present invention, in a scanning electron microscope device that irradiates an electron beam onto a sample, detects the emitted secondary electrons, and forms an image using the detected secondary electrons No. 18, Separates the secondary electron signal into a low frequency component signal and a high frequency component signala
t. A signal correction device is provided to adjust the magnitude of the high frequency component signal according to the magnitude of the low frequency component signal, and an image is formed using the secondary electronic signal corrected by the signal compensation device. There is provided a scanning electron microscope device characterized by the following.

(6)発明の実施例 第2図に本発明の一実施例としての走査形電子顕徽縫装
置を示す。第2図装置には第1図装置に比しさらに検出
二次電子信号S2を補正二次電子信号S3に補正する信
号補正装置4が設けられている。
(6) Embodiment of the Invention FIG. 2 shows a scanning electronic microscopic sewing device as an embodiment of the invention. Compared to the apparatus shown in FIG. 1, the apparatus shown in FIG. 2 is further provided with a signal correction device 4 for correcting the detected secondary electron signal S2 into a corrected secondary electron signal S3.

信号補正装置4の回路図の実施例を第3図に示した。信
号補正装置4は、SEM  1から受は入れ九検出二次
電子信号S2を所定の時間遅延させる遅延回路41、検
出二次電子信号S2の高周波成分の通過を阻止させ低周
波成分のみを通過させる低周波成分抽出回路としてのロ
ーフ4スフイルタ42、遅延囲路41からの遅延二次電
子信号841とローパスフィルタ42からの低周波成分
信号842との差を算出する高周波成分抽出回路として
の差動増幅器43、所定の電圧値の基準レベル信号84
5を発生させる基準信号発生回路45、低周波成分値0
s42と基準レベル信号842との差を算出する差動増
幅器46、および差動増幅器46からのゲイン補正信号
846にもとづき差動増幅器43からの高周波成分信号
843を増幅し表示装置3へ補正二次電子信号S3を送
出する増幅器44から構成される。
An embodiment of the circuit diagram of the signal correction device 4 is shown in FIG. The signal correction device 4 includes a delay circuit 41 that delays the detected secondary electronic signal S2 received from the SEM 1 by a predetermined time, and blocks the high frequency components of the detected secondary electronic signal S2 from passing through and allows only the low frequency components to pass. Loaf 4 filter 42 as a low frequency component extraction circuit, and a differential amplifier as a high frequency component extraction circuit that calculates the difference between the delayed secondary electronic signal 841 from the delay circuit 41 and the low frequency component signal 842 from the low pass filter 42. 43, reference level signal 84 with a predetermined voltage value
Reference signal generation circuit 45 that generates 5, low frequency component value 0
The differential amplifier 46 calculates the difference between s42 and the reference level signal 842, and the high frequency component signal 843 from the differential amplifier 43 is amplified based on the gain correction signal 846 from the differential amplifier 46 and sent to the display device 3 for correction secondary It consists of an amplifier 44 that sends out an electronic signal S3.

次に第3図装置に図示の各部の回路の信号の波形を例示
した第4図ta)〜顧を参照して第3図装置の動作につ
いて述べる。
Next, the operation of the apparatus shown in FIG. 3 will be described with reference to FIGS.

第4図61)に例示の検出二次電子信号81は、本来高
周波信号であるが、前述の何らかの原因により低周波成
分の雑音が重畳され、さらに本来同一振幅であるべき高
周波成分の検出二次電子信号の振幅が、低周波成分が存
在しないとしても、PI。
The detected secondary electronic signal 81 illustrated in FIG. Even if the amplitude of the electronic signal has no low frequency components, the PI.

P2.P3.P4のように相違した場合を示す。P2. P3. A case where there is a difference as shown in P4 is shown.

このような検出二次電子信号S1がローパスフィルタ4
2を通され、第4図6)に図示のように、。
Such a detected secondary electron signal S1 is passed through the low-pass filter 4.
2, as shown in FIG. 4 (6).

低周波成分のみの低周波成分信号S42が得られる。検
出二次電子信号S1はまた、ロー/臂スフィルタ42の
通過時間と一致するように遅延回路41で遅延される。
A low frequency component signal S42 containing only low frequency components is obtained. The detected secondary electronic signal S1 is also delayed by the delay circuit 41 so as to match the passage time of the low/arm filter 42.

よって差動増幅器43の出力としては、第4図−)の信
号S2から第4図伽)の信号S41を減じた高周波成分
のみの信号843が得られる。
Therefore, as the output of the differential amplifier 43, a signal 843 containing only high frequency components is obtained by subtracting the signal S41 of FIG. 4-) from the signal S2 of FIG. 4-).

高周波成分信号843の振幅P1’、P2’、P3’。Amplitudes P1', P2', and P3' of the high frequency component signal 843.

、P4′がこの実施例のように不均一でない場合には、
f343を増幅して補正二次電子信号S3として表示装
置3に用いることもできる。
, P4' is not uniform as in this example,
It is also possible to amplify f343 and use it in the display device 3 as the corrected secondary electron signal S3.

しかしながらこの実施例においては、第4図(C)に図
示の如く、本来同一の振幅であるべきP1′。
However, in this embodiment, as shown in FIG. 4(C), P1' should originally have the same amplitude.

P2’ 、P3’ 、P4’が影響を受けたま\であり
、侶号S43のま\では、本来の二次電子の発生状態を
示すものではない。このため信号843を補正する必要
があシ、次のように行う。
P2', P3', and P4' are still affected, and the status of S43 does not indicate the original state of secondary electron generation. Therefore, it is necessary to correct the signal 843, and this is done as follows.

前述の低周波成分信号842と基準信号発生回路45か
らの基準レベル信号845とを差動増幅器46で比較し
、第4図(b)参照、ゲイン補正信号S46を求める。
The aforementioned low frequency component signal 842 and the reference level signal 845 from the reference signal generation circuit 45 are compared by the differential amplifier 46 to obtain a gain correction signal S46, as shown in FIG. 4(b).

増幅器44はrイン補正信号846を受けて、ゲイン補
正信号に応じて信号S・43の増幅利得を変化させる。
The amplifier 44 receives the r-in correction signal 846 and changes the amplification gain of the signal S.43 in accordance with the gain correction signal.

つまり、846が正のときは基準の利得から減少するよ
うに、846が負のときは基準の利得よシも大きい利得
になるように、ま九これらの利得の変化量は846の絶
対値に依存されるようKなっている。それによシ、本来
同一の振幅であった場合、補正二次電子信号S3の振幅
は、第4図(イ)に図示のごとく、同一の振幅P1“、
P2’。
In other words, when 846 is positive, the gain decreases from the standard gain, and when 846 is negative, the gain becomes larger than the standard gain, and the amount of change in these gains is the absolute value of 846. K has become dependent on me. On the other hand, if the amplitudes are originally the same, the amplitudes of the corrected secondary electron signals S3 will be the same amplitude P1'', as shown in FIG. 4(a).
P2'.

P3’、P4”に補正される。P3' and P4'' are corrected.

以上によシ得られ九補正二次電子信号S3を用いて得ら
れる表示装置3の画像は、むらのない均一なものである
。従って検出二次電子信号s2に何らかの原因によシ比
較的低周波成分のゆらぎ、振幅の変化などが含まれてい
ても正常な状態における二次電子信号に相当するものが
得られ、観測誤差を除去することができる。
The image on the display device 3 obtained using the nine-corrected secondary electron signal S3 obtained above is uniform and free of unevenness. Therefore, even if the detected secondary electron signal s2 contains fluctuations in relatively low frequency components, changes in amplitude, etc. due to some reason, a signal equivalent to the secondary electron signal in a normal state can be obtained, and observation errors can be reduced. Can be removed.

上記の説明においては、説明を明瞭にするためは輩同−
の振幅PI’、P2’、P3″、P4″の場合について
述べたが、これらの信号は物体表面の形状、物体の組成
などに依存した特有の信号が得られ、それぞれの信号が
上記の如く補正されて表示装置3に画像が形成される。
In the above explanation, for clarity,
We have described the cases of amplitudes PI', P2', P3'', and P4'', but these signals are unique depending on the shape of the object's surface, the composition of the object, etc., and each signal is as described above. The corrected image is formed on the display device 3.

ま九基準信号発生回路45からは適宜の電圧レベルの基
準レベル信号845に調節することができ、適宜の大き
さのゲイン補正信号846を得ることができる。それに
より、画像全体の調節を行うことができる。
The reference level signal 845 can be adjusted to an appropriate voltage level from the reference signal generating circuit 45, and a gain correction signal 846 of an appropriate magnitude can be obtained. This allows adjustment of the entire image.

本発明の実施に当っては前述のほか種々の変形形態をと
ることができる。例えば、第3図の実施例においては、
高周波成分の二次電子信号を抽出するための高周波成分
抽出回路として遅延回路41および差動増幅回路43を
用いたが、これらをノ\イ・母スフィルタに代えること
もできる。
In carrying out the present invention, various modifications can be made in addition to those described above. For example, in the embodiment of FIG.
Although the delay circuit 41 and the differential amplifier circuit 43 are used as the high frequency component extraction circuit for extracting the secondary electronic signal of the high frequency component, these may be replaced with a noise/bus filter.

(7)発明の効果 本発明によれば、電子ビームの変動などの外的原因によ
る雑音成分が重畳された二次電子信号から雑音成分を除
去しかつ雑音成分にもとづいて補正し、外的原因に依存
されない二次電子信号を用いた画像が形成できる走査形
電子顕微鏡装置が提供される。
(7) Effects of the Invention According to the present invention, noise components are removed from a secondary electronic signal on which noise components due to external causes such as fluctuations in the electron beam are superimposed, and correction is performed based on the noise components. A scanning electron microscope device is provided that can form images using secondary electron signals that are not dependent on secondary electron signals.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の走査形電子顕微鏡装置の概略構成図、 第2図は本発明の一実施例としての走査形電子顕微鏡装
置の概略構成図、 第3図は第2図における信号補正装置の一笑り例として
の回路図、 第4図−)〜(ωは第3図装置における符号特性図であ
る。 (符号の説明) 1・・・電子顕微鏡、2・・・偏向信号発生装置、3・
・・表示装置、4・・・信号補正装置、41・・・遅延
回路、42・・・ローノ臂スフィルタ、43・・・差動
増幅器、44・・・増幅器、45−・・基準信号発生回
路、46・・・差動増幅器。 特許出願人 富士通株式会社 特許出願代理人 弁理士 青 木    朗 弁理士 西 舘 和 之 弁理士 内 田、幸 男 弁理士 山 口 昭 之 第4図 (d)    53
FIG. 1 is a schematic diagram of a conventional scanning electron microscope device, FIG. 2 is a schematic diagram of a scanning electron microscope device as an embodiment of the present invention, and FIG. 3 is a diagram of a signal correction device in FIG. A circuit diagram as an example, Fig. 4-) to (ω is a sign characteristic diagram in the device shown in Fig. 3. (Explanation of the signs) 1... Electron microscope, 2... Deflection signal generator, 3・
. . . Display device, 4 . Circuit, 46...Differential amplifier. Patent applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney Uchida, Yukio Patent attorney Akira Yamaguchi Figure 4 (d) 53

Claims (1)

【特許請求の範囲】[Claims] 1、試料に電子ビームを照射し放出される二次電子を検
出し検出された二次電子信号を用いて画像を形成させる
走査形電子顕微鏡装置において、前記二次電子信号を低
周波成分信号と高周波成分信号に分離し、該低周波成分
信号の大きさに応じて核高周波成分信号の大きさを調節
する信号補正装置を設け、該信号補正装置で補正した二
次電子信号を用いて画像を形成させるようにしたことを
特命とする走査形電子顕微鏡装置。
1. In a scanning electron microscope device that irradiates a sample with an electron beam, detects the emitted secondary electrons, and forms an image using the detected secondary electron signal, the secondary electron signal is converted into a low frequency component signal. A signal correction device that separates the nuclear high frequency component signal into high frequency component signals and adjusts the magnitude of the nuclear high frequency component signal according to the magnitude of the low frequency component signal is provided, and an image is created using the secondary electron signal corrected by the signal compensation device. A scanning electron microscope device whose special purpose was to enable the formation of
JP7597382A 1982-05-08 1982-05-08 Scanning type electron microscope Pending JPS58194237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7597382A JPS58194237A (en) 1982-05-08 1982-05-08 Scanning type electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7597382A JPS58194237A (en) 1982-05-08 1982-05-08 Scanning type electron microscope

Publications (1)

Publication Number Publication Date
JPS58194237A true JPS58194237A (en) 1983-11-12

Family

ID=13591686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7597382A Pending JPS58194237A (en) 1982-05-08 1982-05-08 Scanning type electron microscope

Country Status (1)

Country Link
JP (1) JPS58194237A (en)

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