JPS58190076A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS58190076A JPS58190076A JP57073655A JP7365582A JPS58190076A JP S58190076 A JPS58190076 A JP S58190076A JP 57073655 A JP57073655 A JP 57073655A JP 7365582 A JP7365582 A JP 7365582A JP S58190076 A JPS58190076 A JP S58190076A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- parallel
- optical axis
- glass plate
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 29
- 239000011521 glass Substances 0.000 abstract description 25
- 230000005855 radiation Effects 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
ｔａ） 発明の技術分野
本発明は半導体発光素子に係り、特に計測・制御装置等
の光源として使用される平面発光型の発光ダイオードの
指向特性の改良に関する。DETAILED DESCRIPTION OF THE INVENTION ta) Technical Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to improving the directivity characteristics of a planar light emitting diode used as a light source for measurement and control devices.
（ｂｌ 従来技術と問題点
平面発光型の発光ダイオードにおいては、放射強度分布
Ｉ （θ）が
ｌ（θ）＝１゜ ｃｏｓθ／（１（ｓｉｎθ／ ｎ ）
” ）・・・・・・（１）
で表される。ここで１６はθ−０（光軸方向）の放射強
度である。通常発光ダイオードに用いられる半導体結晶
では ｎ＞３と大きいため、■（θ）−１ａｃｏｓθ
・・・・・・（２）と近似される。(bl Conventional technology and problems) In a planar light emitting diode, the radiation intensity distribution I (θ) is l(θ) = 1° cos θ/(1(sin θ/ n )
)...(1) Here, 16 is the radiation intensity in θ-0 (optical axis direction).In semiconductor crystals normally used in light emitting diodes, n>3, which is large. ■(θ)−1acosθ
...It is approximated as (2).
この余弦法則に従う光源はランバート光ｍ＜拡散面光源
、もしくは等輝度光源とも言われる）である。例えば■
（６０°）−【。／２ であり、指向特性は悪い。従っ
て平行ビームにする。焦点を結ばせる（スポット状にす
る）場合、或いは光ファイバとの結合効率を高める場合
や、計測・制御の用途もしくはインジケータとして見掛
けの光源サイズを大きくする場合等には、発光ダイオー
ドの前面に光学レンズの挿入が不可欠である。A light source that follows this cosine law is Lambertian light m<diffuse surface light source, or also called a homobrightness light source). For example ■
(60°) - [. /2, and the directional characteristics are poor. Therefore, make it a parallel beam. When focusing (spot-shaped), increasing the coupling efficiency with optical fibers, or increasing the apparent size of the light source for measurement/control purposes or as an indicator, optical fibers are placed in front of the light emitting diode. Insertion of lenses is essential.
第１図は従来より用いられてきた球レンズを装荷した発
光ダイオードを示す要部断面図である。FIG. 1 is a sectional view of a main part of a light emitting diode loaded with a conventionally used ball lens.
同図に見られる如く、発光ダイオード素子１上に球レン
ズ２が透明樹脂３によって接着されている。As seen in the figure, a ball lens 2 is bonded onto a light emitting diode element 1 with a transparent resin 3.
発光部１”が球レンズの曲率に較べて十分に小さく、そ
の発光口１１が球レンズの焦点面上にある時、球レンズ
から出た光は平行光線となる。When the light emitting portion 1'' is sufficiently small compared to the curvature of the ball lens and its light emitting port 11 is on the focal plane of the ball lens, the light emitted from the ball lens becomes a parallel ray.
この球レンズには多くはサファイア球が用いられており
、赤色から近赤外域の波長では焦点がサファイア球の底
から僅か下に位置している。従って同図に示すように発
光ダイオードチップ上にサファイア球を設置することに
より、発光部がほぼ焦点面上に位置することになり、細
い平行ビーム４を放射する発光ダイオードを作成し得る
。例えば発光径を約３５〔μｍ〕とし、直径約５００〔
μｍ〕のサファイア球２を用いれば、凡そ５°のビーム
角が得られる。A sapphire sphere is often used in this ball lens, and the focal point is located slightly below the bottom of the sapphire sphere at wavelengths from red to near-infrared. Therefore, by placing a sapphire sphere on a light emitting diode chip as shown in the figure, the light emitting part will be located approximately on the focal plane, and a light emitting diode that emits a narrow parallel beam 4 can be created. For example, if the emission diameter is about 35 [μm], the diameter is about 500 [μm].
[mu]m], a beam angle of approximately 5° can be obtained.
しかしながら上記構造では、発光部と球レンズの中心と
の軸合せを正確に行うことを要する。即ち発光部と球レ
ンズの各々の中心を通る方向が光軸であるので、第２図
に示すようにこの先軸６がステム５の中心を通る法線（
以下これを機械軸と称する）７とずれた場合、この発光
ダイオードを使用するためには光軸合せが必要となる。However, in the above structure, it is necessary to accurately align the axes of the light emitting section and the center of the ball lens. In other words, since the direction passing through the centers of the light emitting part and the ball lens is the optical axis, the normal line (
(hereinafter referred to as the mechanical axis) 7, it is necessary to align the optical axis in order to use this light emitting diode.
仮に直径約５００〔μｍ〕のサファイア球２の中心の位
置が約５０〔μｍ）機械軸７からずれると、光軸と機械
軸との偏角θは凡そ１１．３°となる。If the center of the sapphire sphere 2 with a diameter of about 500 [μm] is shifted from the mechanical axis 7 by about 50 [μm], the deflection angle θ between the optical axis and the mechanical axis will be approximately 11.3°.
ｔｅｌ 発明の目的
本発明の目的は、上記光軸と機械軸との偏角を略０とし
得る発光ダイオードを提供することにある。tel OBJECTS OF THE INVENTION An object of the present invention is to provide a light emitting diode in which the polarization angle between the optical axis and the mechanical axis can be approximately zero.
ｆｄｌ 発明の構成
本発明の特徴は、半導体発光素子と、前記半導体発光素
子子に配設された球状レンズと、前記球状レンズの光Ｊ
Ｉｋ出面に対応して配置され相対する主面が非平行面を
有する透明体とを備えてなることにある。fdl Structure of the Invention The features of the present invention include a semiconductor light emitting device, a spherical lens disposed on the semiconductor light emitting device, and a light source J of the spherical lens.
The transparent body is disposed corresponding to the Ik output surface and has a non-parallel main surface facing the transparent body.
（ａｌ 発明の実施例 以下本発明の一実施例を図面により説明する。(al Embodiments of the invention An embodiment of the present invention will be described below with reference to the drawings.
第３図は本発明の一実施例を示す要部断面図であって、
１し５１発光ダイオード素子、２は球面レンズ、３は透
明４ｈ１脂、５番１１ステム、８はキャップ、９は−に
面と下面が非平行なガラス板、Ｗは金属細線、Ｇはガラ
ス、Ｌ ＩＩ端子リードを示す。本実施例はガラス４Ｍ
９を非平行平面とした点が従来の発光ダイオードと異な
る。FIG. 3 is a sectional view of a main part showing an embodiment of the present invention,
1 and 51 light emitting diode elements, 2 is a spherical lens, 3 is transparent 4H1 resin, 5 and 11 stems, 8 is a cap, 9 is a glass plate whose surface and bottom surface are non-parallel to -, W is a thin metal wire, G is glass, L II terminal lead is shown. This example is glass 4M
It differs from conventional light emitting diodes in that 9 is a non-parallel plane.
次にこのように構成した本実施例の原理を第４図により
説明する。Next, the principle of this embodiment configured as described above will be explained with reference to FIG.
同図において、６は上記球面レンズ２から放射された発
光ビームの光軸、７は機械軸、１０及び１１は上記ガラ
ス板９の下面及び上面、θは機械軸７と光軸６との交角
、θ、はガラス板９に対する入射角、φはガラス板９の
下面ＩＯと上面１１との交角を示ず。なおガラス板９の
上面１１は機械軸に対して垂直（発光面と平行）にして
おく。In the figure, 6 is the optical axis of the emitted light beam emitted from the spherical lens 2, 7 is the mechanical axis, 10 and 11 are the lower and upper surfaces of the glass plate 9, and θ is the intersection angle between the mechanical axis 7 and the optical axis 6. , θ, does not indicate the incident angle with respect to the glass plate 9, and φ does not indicate the intersection angle between the lower surface IO and the upper surface 11 of the glass plate 9. Note that the upper surface 11 of the glass plate 9 is perpendicular to the mechanical axis (parallel to the light emitting surface).
入射角θ１は同図より明らかな如く、
θ１ ＝θ＋φ （３）で表される。一
方屈折の法則（スネルの法則）により屈折角θ、は、ガ
ラスの屈折率をｎとしてｎ ｓｉｎθ、 ＝ ｓｉｎ
θ。As is clear from the figure, the incident angle θ1 is expressed as θ1 =θ+φ (3). On the other hand, according to the law of refraction (Snell's law), the refraction angle θ, where n is the refractive index of glass, is n sin θ, = sin
θ.
＝ｓｉｎ（θ＋φ） ・・・・・・（４）で表される。=sin(θ+φ)...It is expressed as (4).
この屈折角θ、が、
θ、−φ ・・・・・・（５）なる条件
のとき、屈折した光線の光軸６゛は機械軸７と平行にな
る。従ってガラス板９の上面１１がステム５の上面に平
行、即ち機械軸７に垂直ならば、放射される光線の光軸
６°はガラス板９の上面１１に垂直となる。When the refraction angle .theta. is .theta., -.phi. (5), the optical axis 6' of the refracted light beam becomes parallel to the mechanical axis 7. Therefore, if the upper surface 11 of the glass plate 9 is parallel to the upper surface of the stem 5, ie perpendicular to the mechanical axis 7, then the optical axis 6° of the emitted light beam will be perpendicular to the upper surface 11 of the glass plate 9.
（５１ｆｄｌ式よりその理想的条件は、ｎ ｓｉｎφ
−５ｉｎ （θ＋φ） ・・・・・・（６）であるが
、φ、θが極めて小なるとき、ｓｉｎφ−φ、５ｉｎ（
θ＋φ）＃θ＋φと近似出来るため（６）式は、
ｎφ＝θ＋φ
従って、（ｎ−１）φ−θ ・・・・・・（
７）となる。(From the 51fdl formula, the ideal condition is n sinφ
-5in (θ+φ) ・・・・・・(6) However, when φ and θ are extremely small, sinφ−φ, 5in(
Since it can be approximated as
7).
今ガラス板９の材質としてコバールガラスを選択すると
、ｎ ＃ １．５であるから、光源の光軸の傾きθに対
して、ガラス板９の下面１０と上面１１の交角φを２θ
とすることにより、光軸６゛は機械軸７に平行となる。If Kovar glass is selected as the material of the glass plate 9, n # 1.5, so the intersection angle φ between the lower surface 10 and the upper surface 11 of the glass plate 9 is 2θ with respect to the inclination θ of the optical axis of the light source.
By doing so, the optical axis 6' becomes parallel to the mechanical axis 7.
このように本実ｈＩＩｉ例においては、球レンズからの
放射光の光軸６の１嘆きに応じてガラス板９の下面１１
を（’３１ ＆＋ 、機械軸７と斜交させることにより
、上記放射光はこのガラス板９で屈折され、機械軸７に
略平行な光軸６゛を有する細い平行ビームとして放射さ
れる。In this way, in the present hIIi example, the lower surface 11 of the glass plate 9 is adjusted in accordance with the angle of the optical axis 6 of the emitted light from the ball lens.
By making ('31 &+) obliquely intersect with the mechanical axis 7, the emitted light is refracted by the glass plate 9 and is emitted as a narrow parallel beam having an optical axis 6' substantially parallel to the mechanical axis 7.
次に第５図、第６図により本発明を実施するための発光
ダイオードの製作工程を説明する。Next, the manufacturing process of a light emitting diode for implementing the present invention will be explained with reference to FIGS. 5 and 6.
まず第５図にめられる如く発光ダイオード２１の放射光
２２を撮像管２３に照射し、その像Ｑをブラウン管の表
示画面２４に表示せしめる。なおこのとき発光ダイオー
ド２（の機械軸を撮像管２３の中心軸に一致させておく
。放射光２２の光軸が機械軸に一致していれば、放射光
２２の＠Ｑは表示画面２４の中心１）に一致するが、通
算像Ｑば図示せる如く表示画面２４の中心Ｐから離隔し
ている。その変位量りは前述の放射光の機械軸に対する
偏角θに比例する。First, as shown in FIG. 5, the emitted light 22 of the light emitting diode 21 is irradiated onto the image pickup tube 23, and the image Q thereof is displayed on the display screen 24 of the cathode ray tube. At this time, the mechanical axis of the light emitting diode 2 (2) should be aligned with the central axis of the image pickup tube 23. If the optical axis of the synchrotron radiation 22 is aligned with the mechanical axis, @Q of the synchrotron radiation 22 will be aligned with the central axis of the image pickup tube 23. The total image Q coincides with the center 1), but as shown in the figure, the total image Q is separated from the center P of the display screen 24. The displacement measure is proportional to the deflection angle θ of the emitted light with respect to the mechanical axis.
そこでこの変位量りの大きさにより発光ダイオード２１
を複数のクラス、例えば５個のクラスに分類する。そし
て各クラスの偏角の中央値をそのクラスの偏角の代表値
θｉ （上例ではｉ＝ｌ〜５）とする。Therefore, depending on the magnitude of this displacement measure, the light emitting diode 21
are classified into a plurality of classes, for example, five classes. Then, the median value of the argument angles of each class is set as the representative value θi of the argument angles of that class (i=1 to 5 in the above example).
一方ガラス板９も上記各クラスの偏角θｉにそれぞれ対
応する交角φｉ （−上例ではｉ＝ｌ〜５）を嘗゛出
し、交角がそれぞれφｉなるガラス板９を備えた複数種
類（上例では５種類）のキャップ８を予め準備する。On the other hand, the glass plates 9 also have intersecting angles φi (-i=l to 5 in the above example) corresponding to the declination angles θi of each of the above classes. In this case, five types of caps 8 are prepared in advance.
第６図は封止工程を示す要部断面図で、３１は下部電極
、３２は−Ｌ部電極、３３は検知器である。FIG. 6 is a sectional view of the main parts showing the sealing process, in which 31 is a lower electrode, 32 is a -L part electrode, and 33 is a detector.
同図に見られるように、まず封止すべき発光ダイオード
２１のクラスに対応し、ガラス板９が取り付けられたキ
ャップ８を上部電極３２に一定の方向にセットし、次い
で上記発光ダイオード２１を下部電極３２にセットする
。そしてステム５を回転させ、検知器３３の入力が最大
のところ（光軸が補正された位置）で封止を行う。As shown in the figure, first, the cap 8 to which the glass plate 9 is attached is set in a fixed direction on the upper electrode 32 corresponding to the class of the light emitting diode 21 to be sealed, and then the light emitting diode 21 is placed in the lower part. Set it on the electrode 32. Then, the stem 5 is rotated and sealing is performed at the position where the input of the detector 33 is maximum (the position where the optical axis is corrected).
このようにして得られた本発明に係る発光ダイオードの
完成体は、機械軸と略平行な光軸を有する平行ビームを
放射しｉ！Ｉる。The thus obtained completed light emitting diode according to the present invention emits a parallel beam having an optical axis substantially parallel to the mechanical axis, and emits an i! I.
さらに１−記Ｉ＝Ｉ ＋Ｌ王程において光軸と機械軸と
を平行に調整したのら、キャップ８またはステム５を、
回転させることなく位置を（（１正することにより、放
射光の光軸をキャップの中心軸と一致させることも可能
である。Furthermore, after adjusting the optical axis and mechanical axis in parallel in step 1-I=I+L, the cap 8 or stem 5 is
It is also possible to align the optical axis of the emitted light with the central axis of the cap by correcting the position by ((1) without rotating it.
発光ダイオードを実際に使用するに際しては、通常キャ
ップのｆｕｌｌ ’、’＋Ｖを泡えることにより発光ダ
イオードを装着する。従って放射光の光軸とキャップの
中心軸とが一致していれば、発光ダイオードを装着する
のみでシステムの光軸に放射光の光軸が一致することと
なる。When actually using a light emitting diode, the light emitting diode is usually attached by bubbling the full ', '+V of the cap. Therefore, if the optical axis of the emitted light matches the central axis of the cap, the optical axis of the emitted light will match the optical axis of the system simply by mounting the light emitting diode.
ｆｆｌ 発明のり」果
以−ト説明した如く本発明によれば、発光ダイオードの
放射光の光軸を機械軸に略平行、史にはキャップの中心
軸と略一致させることが可能となる。As explained above, according to the present invention, it is possible to make the optical axis of the emitted light from the light emitting diode substantially parallel to the mechanical axis, and generally to coincide with the central axis of the cap.
従って本発明に係る発光ダイオードは、使用するに際し
て光軸合セが不要となる。Therefore, the light emitting diode according to the present invention does not require optical axis alignment when used.
第１図及び第２図は従来の発光ダイオードの説明に供す
るための要部断面図、第３図は本発明の一実施例を示す
要部断面図、第４図は本発明の詳細な説明するための図
、第５図及び第６図は本発明に係る発光ダイオードの製
作］Ｆ程の一例を示す斜視図及び要部断面図である。
図において、■は発光ダイオ−１゛素子、２は球面レン
ズ、４ば球面レンズからの放射光、５はステム、６は放
射光４の光軸、６’！Ｊ放射光４が屈折された後の光軸
、７（１！機械軸、８はキャップ、９はキャップのｍ部
に取り付し」られたガラス板、１０及び１１はガラス板
９の下面及び−１−面、θは球面レンズ２からの７ｉ＆
射光４の光軸と機械軸７との交角、φはガラス板９の−
Ｆ面１０と土面１１との交角を小ず・
代理人 弁理士 松岡宏四部
０
第３図
第５図
第６図1 and 2 are sectional views of essential parts for explaining a conventional light emitting diode, FIG. 3 is a sectional view of essential parts showing an embodiment of the present invention, and FIG. 4 is a detailed explanation of the present invention. FIGS. 5 and 6 are a perspective view and a sectional view of a main part showing an example of the manufacturing process of the light emitting diode according to the present invention. In the figure, ■ is the light emitting diode 1' element, 2 is the spherical lens, 4 is the emitted light from the spherical lens, 5 is the stem, 6 is the optical axis of the emitted light 4, and 6'! The optical axis after the J synchrotron radiation 4 is refracted, 7 (1! Mechanical axis, 8 the cap, 9 the glass plate attached to the m part of the cap), 10 and 11 the lower surface of the glass plate 9, −1− plane, θ is 7i & from spherical lens 2
The intersection angle between the optical axis of the emitted light 4 and the mechanical axis 7, φ is − of the glass plate 9.
The intersection angle between the F surface 10 and the earth surface 11 is Kozu・ Agent Patent attorney Hiroshi Matsuoka Dept. 0 Figure 3 Figure 5 Figure 6
Claims (1)
球状レンズと、前記球状レンズの光放出面に対応して配
置され相対する主面が非平行面を有する透明体とを備え
てなることを特徴とする半導体発光装置。A semiconductor light emitting element, a spherical lens disposed on the semiconductor light emitting element, and a transparent body arranged corresponding to a light emitting surface of the spherical lens and having opposing main surfaces having non-parallel surfaces. A semiconductor light emitting device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57073655A JPS58190076A (en) | 1982-04-30 | 1982-04-30 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57073655A JPS58190076A (en) | 1982-04-30 | 1982-04-30 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58190076A true JPS58190076A (en) | 1983-11-05 |
Family
ID=13524510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57073655A Pending JPS58190076A (en) | 1982-04-30 | 1982-04-30 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58190076A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2581768A1 (en) * | 1985-05-10 | 1986-11-14 | Thomson Csf | BIDIRECTIONAL OPTOELECTRIC COMPONENT FORMING OPTICAL COUPLER |
| EP0645824A1 (en) * | 1993-09-25 | 1995-03-29 | Nec Corporation | Semiconductor light receiving apparatus |
-
1982
- 1982-04-30 JP JP57073655A patent/JPS58190076A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2581768A1 (en) * | 1985-05-10 | 1986-11-14 | Thomson Csf | BIDIRECTIONAL OPTOELECTRIC COMPONENT FORMING OPTICAL COUPLER |
| EP0645824A1 (en) * | 1993-09-25 | 1995-03-29 | Nec Corporation | Semiconductor light receiving apparatus |
| US5550675A (en) * | 1993-09-25 | 1996-08-27 | Nec Corporation | Semiconductor light receiving apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI465147B (en) | Led source with hollow collection lens | |
| US10048456B2 (en) | Packaging device of single optical multiplexed parallel optical receiver coupling system component and the system thereof | |
| US4733094A (en) | Bidirectional optoelectronic component operating as an optical coupling device | |
| JP2645862B2 (en) | Semiconductor light emitting device and its applied products | |
| JPS6265387A (en) | Light emitting diode and manufacturing thereof | |
| GB2054896A (en) | Detachable coupling for optical fibres | |
| US20090239318A1 (en) | Glass-coated light-emitting element, light-emitting element-attached wiring board, method for producing light-emitting element-attached wiring board, lighting device and projector | |
| US20180045969A1 (en) | Light-emitting device | |
| JP2009218870A (en) | Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and method of manufacturing camera module | |
| JPS58190076A (en) | Semiconductor light emitting device | |
| JPH06151972A (en) | Lens-on-chip luminescent device and manufacture thereof | |
| US7223024B2 (en) | Optical module including an optoelectronic device | |
| US6340248B1 (en) | High precision optical collimator for optical waveguide | |
| US5268922A (en) | Laser diode assembly | |
| CN207133551U (en) | LCOS lighting devices | |
| JPS61253872A (en) | Light-emitting semiconductor device | |
| US6789922B2 (en) | Cross-shaped beam laser ray device and lens | |
| JPS5975219A (en) | Optical semiconductor element module | |
| JP3121100B2 (en) | Solid-state imaging device | |
| US20240128385A1 (en) | Light Receiving Device | |
| RU193901U1 (en) | SENSOR VECTOR DIRECTIONS IN THE SUN | |
| CN216448092U (en) | Optical lens for producing polarization effect and optical device | |
| CN100474546C (en) | Method and apparatus for mapping a position of a capillary tool tip using a prism | |
| CN216668747U (en) | Double-star simulator | |
| JPS5931077A (en) | Semiconductor light emitting device |