JPS5819002A - Polarized type band pass filter - Google Patents

Polarized type band pass filter

Info

Publication number
JPS5819002A
JPS5819002A JP11728981A JP11728981A JPS5819002A JP S5819002 A JPS5819002 A JP S5819002A JP 11728981 A JP11728981 A JP 11728981A JP 11728981 A JP11728981 A JP 11728981A JP S5819002 A JPS5819002 A JP S5819002A
Authority
JP
Japan
Prior art keywords
coupling
resonator
attenuation
resonators
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11728981A
Other languages
Japanese (ja)
Inventor
Hiroshi Hatanaka
博 畠中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENGIYOU KOSAKU KK
Nihon Dengyo Kosaku Co Ltd
Original Assignee
NIPPON DENGIYOU KOSAKU KK
Nihon Dengyo Kosaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENGIYOU KOSAKU KK, Nihon Dengyo Kosaku Co Ltd filed Critical NIPPON DENGIYOU KOSAKU KK
Priority to JP11728981A priority Critical patent/JPS5819002A/en
Publication of JPS5819002A publication Critical patent/JPS5819002A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/205Comb or interdigital filters; Cascaded coaxial cavities

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

PURPOSE:To improve the leading characteristics of the attenuation area, by disposing a plurality of semicoaxial type dielectric resonator in channel shape, and indirectly coupling the resonators. CONSTITUTION:A BPF is formed with a shield case 1, inner conductors 21-26, dielectric substances 31-36, interstage coupling capacitor forming conductors 41-410, and section shield 7. A coupling element 9 is coupled with a leakage magnetic field produced at an air gap of a resonator including the inner conductors 22 and 25, and coupling element 10 consists of an electrode rod supported and inserted at the air gap of the resonator including the inner conductors 21, 26 to form the coupling capacitor. With suitable degree of coupling of the coupling elements 9 and 10, the attenuation pole to the attenuation area can be produced.

Description

【発明の詳細な説明】 本発明は、半開軸形誘電体共振器を用いた有極形帯域通
過ろ波器(以下帯域通過ろ波器をBPPと略称′1″ろ
)に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polarized bandpass filter (hereinafter referred to as a bandpass filter abbreviated as BPP) using a half-open axial dielectric resonator.

第1図1コ、従来のBPPの一例を示す図で、水平面に
よって切断した断面−(以下yJ<平断面図と称(1) する)である。図において、Iは外部導体を形吸するシ
ール1+ケース、21 ないし2bは内部導体で、各下
端部をシールドケース1の底壁に接触せしめ、各上端部
とシールドケース1の土壁間に適宜の空隙を設けである
。31  ないし3b 1.を直方体を成す誘電体で、
内部導体21 ないし2ム及びシール1ζケースlと共
に半同軸形誘電体共振器を形成する。41ないし4ID
は段間結合容量形成用導体片で、名一端が内部導体2I
  ないし2bの名士端部、即ち名開放端に取付けらイ
1、対向導体片間に段間結合容量が形成される。5I 
及び5スは入出力結合コンデン勺、6I 及び62は入
出力同軸端子、7は仕切シールド壁である。
FIG. 1 is a diagram showing an example of a conventional BPP, and is a cross section cut along a horizontal plane (hereinafter referred to as yJ<plane cross-sectional view (1)). In the figure, I is a seal 1 + case that absorbs the external conductor, 21 to 2b are internal conductors, each lower end is in contact with the bottom wall of the shield case 1, and each upper end is placed between the earthen wall of the shield case 1 as appropriate. A gap is provided. 31 to 3b 1. is a rectangular dielectric,
Together with the inner conductors 21 to 2 and the seal 1ζ case l, a semi-coaxial dielectric resonator is formed. 41 or 4ID
is a conductor piece for forming interstage coupling capacitance, and one end is the inner conductor 2I.
An interstage coupling capacitance is formed between the opposed conductor pieces 1 to 2b, which are attached to the open ends of the conductors 1 to 2b. 5I
and 5 are input/output coupling capacitors, 6I and 62 are input/output coaxial terminals, and 7 is a partition shield wall.

第2図は、第1図に示したBPFの等価回路図で、L、
  ないしL6は各半同軸形誘!昨共振器のイノタフタ
ンス分、CI及びcqは入出力コンデンサ5I及び5z
 の容量、CzないしCムは導体片41  ないし41
5によって形成≧狛る段間結合容量である。
FIG. 2 is an equivalent circuit diagram of the BPF shown in FIG.
Or L6 is each semi-coaxial type! The inotaftance of the previous resonator, CI and cq are the input and output capacitors 5I and 5z.
The capacitance, Cz or Cm, is the conductor piece 41 or 41
5, the interstage coupling capacitance formed≧disappears.

(2) このような従来のBPFにおいては通〕h域がワグナ−
形特性又はチェピンエフ形特性を呈し、減衰域がワグナ
−形特性で、減衰域の立上り特性が悪く、立上り特性を
良好ならしめるためには共4辰器の段数(次数)を大な
らしめる必要があり、その結果全体が大形となり、挿入
損失が大となると共に製作lこ際して調整に多大の時間
と手数を要する等の欠点を有する。
(2) In such a conventional BPF, the normal h range is Wagner.
It exhibits shape characteristics or Chepinev-type characteristics, the attenuation region is Wagner-type characteristics, and the rise characteristics of the attenuation region are poor, and in order to make the rise characteristics good, it is necessary to increase the number of stages (order) of the quadrupole. As a result, the overall size is large, the insertion loss is large, and there are drawbacks such as a large amount of time and effort required for manufacturing and adjustment.

本発明は、減衰域の立上り特性が良好で、形状が小形な
ると共に損入損失が小で、製作に際して調整を容易迅速
に行ない得る有極形帯域通過ろ波器を実現することを目
的とする。
An object of the present invention is to realize a polarized bandpass filter that has good rise characteristics in the attenuation region, is small in size, has low input and loss, and can be easily and quickly adjusted during manufacturing. .

第3図は、本発明の一実施例を示す水平断面図(第4図
のC−C部分の断面図)、第4図は、第3図のA−A部
分の楕断面図、第5図は、第3図のB−8部分の横断面
図で、各図において、1は外部導体を形成するシールド
ケース、2.ないし2bは内部導体、31 ないし3G
は直方体を成す誘(3) 電体、41 ないし410は段間結合容量形成用導体片
、51 及び52は入出力結合コンデン→f、61 及
υ6zは入出力同軸端子、7は仕切シールIS壁で、往
路の共振器と復「名の共振器が結合するのを防ぐために
設けたもので、以上は第1図示のものと同様の構成であ
る。8I  ないし8bは同調ねじで、こ狛らを各別I
こ回転ゼしめることに、1′9各共振器の共振周波数を
各別に微細に調整することが出来る。(調整ねじ8ヨ及
び昨は図示していない)9及び10は本発明の要旨たる
間接結合素子で、素子9は、内部導体2z及び25を含
む両誘電体共振器の開放部、即ち内部導体22.及び2
6並に誘電体3z及び3夕の各上端面とシールドケース
1の土壁との間に形成された空隙部lこ設けられ、この
空隙部に生ずる漏れ磁界と結合するループより成り、そ
の両端を仕切シールド壁7に接続1−ると共に、その中
間部を仕切シールド壁7に穿った孔隙11に挿通しであ
る。尚、結合ループ9が孔隙11 の周縁に(4) 接触短絡するのを防ぐため、孔隙11 の同時と結合ル
ープ9間に絶縁物(図示していない)を介在せしめる。
3 is a horizontal cross-sectional view (cross-sectional view taken along the line C-C in FIG. 4) showing one embodiment of the present invention; FIG. 4 is an elliptical cross-sectional view taken along the line A-A in FIG. 3; The figure is a cross-sectional view of the B-8 section in FIG. 3. In each figure, 1 is a shield case forming an external conductor; 2. or 2b is an internal conductor, 31 or 3G
is a rectangular parallelepiped dielectric (3) electric body, 41 to 410 are conductor pieces for forming interstage coupling capacitance, 51 and 52 are input/output coupling capacitors → f, 61 and υ6z are input/output coaxial terminals, 7 is a partition seal IS wall This is provided to prevent the forward resonator from coupling with the return resonator, and the above configuration is the same as that shown in Figure 1. 8I to 8b are tuning screws, Separate each I
By tightening this rotation, the resonance frequency of each resonator can be finely adjusted individually. (Adjusting screws 8 and 8 are not shown) 9 and 10 are indirect coupling elements which are the gist of the present invention, and element 9 is an open part of both dielectric resonators including internal conductors 2z and 25, that is, an internal conductor. 22. and 2
6, a gap is formed between the upper end surfaces of the dielectrics 3z and 3, and the earthen wall of the shield case 1, and is composed of a loop that couples with the leakage magnetic field generated in this gap. is connected to the partition shield wall 7, and its intermediate portion is inserted into a hole 11 bored in the partition shield wall 7. In order to prevent the coupling loop 9 from contacting the periphery of the hole 11 (4) and causing a short circuit, an insulator (not shown) is interposed between the coupling loop 9 and the hole 11 .

次に素子10は、内部導体2I及び2b登含む両誘電体
共振器の各開放部に対応する仕切シールド壁7の個所に
穿った孔隙12に絶縁物13を介して挿通支持したt掻
棒より成り、この電極棒の一端と内部導体21間及び電
極棒の他端と内部導体26間にそれぞわ結合容量を形成
しである。
Next, the element 10 is inserted into a hole 12 formed in the partition shield wall 7 at a location corresponding to each open part of both dielectric resonators including the internal conductors 2I and 2b through an insulator 13. Therefore, a coupling capacitance is formed between one end of the electrode rod and the internal conductor 21 and between the other end of the electrode rod and the internal conductor 26, respectively.

第6図は、第3図ないし第5図に示した本発明有極形B
PFの基本等価回路図で、ムr ないしL&は各誘電体
共1辰器のインダクタンス分、CI 及びC7は入出力
結合コンデンサ5I 及び52 の容量、C2ないしC
6は導体片41  ないし4+oによって形成ざイ]る
股間結合容量、M+ は結合ループ9と内部導体22を
含む共振器間の相互インダクタンス、M2は結合ループ
9と内部導体25を含む共振器間の相互インダクタンス
、Ocは結合素子10と内部導(5) 体21間の結合容量及び結合素子1oと内部導体26開
の結合容量の総合容量、A、B、O及びDは間接結合素
子9及び10の結合点である。
FIG. 6 shows the polar type B of the present invention shown in FIGS. 3 to 5.
In the basic equivalent circuit diagram of PF, Mr or L& is the inductance of each dielectric, CI and C7 are the capacitances of input/output coupling capacitors 5I and 52, and C2 to C
6 is the coupling capacitance between the legs formed by the conductor pieces 41 to 4+o, M+ is the mutual inductance between the resonator including the coupling loop 9 and the internal conductor 22, and M2 is the mutual inductance between the resonator including the coupling loop 9 and the internal conductor 25. The mutual inductance, Oc is the total capacitance of the coupling capacitance between the coupling element 10 and the internal conductor (5) and the coupling capacitance between the coupling element 1o and the internal conductor 26 open, and A, B, O, and D are the indirect coupling elements 9 and 10. It is the connection point of

第7図1コ、第6図に示した等価口路図を70ツク綿図
を以て示したもので、P、 ないしP7 は共振器及び
結合容量等によって形成される位相回路(位相量は一9
0′、即ち+270”)で、いわゆるインピーダンスイ
ンバータである。同、図に記載した±90°は伝送信号
の共振器における位相量で、通過域より高い周波数の信
号は+90’、通過域より但い周波数の信号の位相1は
−90”である。他の符号は第6図と同様である。
Figure 7 shows the equivalent path diagram shown in Figure 6 with 70 square diagrams, where P and P7 are phase circuits formed by resonators and coupling capacitors (the amount of phase is 19
0', i.e., +270"), and is a so-called impedance inverter. The ±90° shown in the figure is the phase amount in the resonator of the transmission signal, and the signal with a frequency higher than the passband is +90', but above the passband. The phase 1 of a signal with a high frequency is -90''. Other symbols are the same as in FIG.

上記のように構成した本発明BPFにおいては、股間結
合容量を介して半開軸形誘電体共振器回路を伝送する信
号(μ下、主回路を伝送する信号と称する)の中、通過
域より周波数の高い信号のA及びD点間の位相量は、 +90″×6+(−90″X5 ) =+90”(6) となり、主回路を伝送する信号の中、通過域より周波数
の但いイ言号のA及びD小間の位相量は、−90’ X
6 + (−90’ X5 )ニー990”(−990
°+720’ニー270’ )となる。一方、間接結合
容量素子10を介してA点からD点へ伝送される信号は
、!朝波数に関係な、          <A及びD
点間において90’ +7)位相進みを生じ、A点から
主回路を伝送してD点に到る信号との間に180′の位
相差を生ずる。減衰域においては、主回路を介してD点
に伝送された信号の振幅はA点にお(iる(辰幅に[ヒ
し極めて小であるから、間接結合容量素子10の結合度
を適当ならしめることにより素子10を介してD点に伝
送された信号の振幅を主回路を介してD点に伝送された
信号の振幅に等しくして両信号を互に打消さしめ、減衰
域に減衰極を生せしめることが出来る。
In the BPF of the present invention configured as described above, in the signal transmitted through the half-open shaft dielectric resonator circuit via the groin coupling capacitance (referred to as the signal transmitted through the main circuit under μ), the frequency is lower than the passband. The phase amount between points A and D of a signal with a high The phase amount of the A and D booths is -90'X
6 + (-90'X5) knee 990'' (-990
+720'knee 270'). On the other hand, the signal transmitted from point A to point D via the indirect coupling capacitance element 10 is! <A and D related to morning wave number
A phase advance of 90'+7) is generated between the points, and a phase difference of 180' is generated between the signal transmitted from point A through the main circuit to point D. In the attenuation range, the amplitude of the signal transmitted to point D via the main circuit is at point A (i). By smoothing, the amplitude of the signal transmitted to point D via element 10 is made equal to the amplitude of the signal transmitted to point D via the main circuit, causing both signals to cancel each other out, and the signal is attenuated in the attenuation range. It is possible to generate extremes.

次に主回路を伝送する信号の中、通過域より周波数の高
い信号のB及びC点間の位相量は、電圧(7) 電流共に、 +90’ X4 +(−90” X3 ) =+90゜
となり、主回路を伝送する信号の中、通過域より周波数
の低い信号のB及びC点間の位相量は、電圧電流共に、 一90’ X4 +(−90°X3)=−630゜(−
630” + 360’−−270” )となる。
Next, among the signals transmitted through the main circuit, the phase amount between points B and C of a signal with a higher frequency than the passband is +90'X4 + (-90''X3) = +90° for both voltage (7) and current. , among the signals transmitted through the main circuit, the phase amount between points B and C of the signal whose frequency is lower than the passband is -90'X4 + (-90°X3) = -630°(-
630" + 360'--270").

一方、間接結合ループ9を介してB点から0点へ伝送さ
れる信号は、内部導体2z及び2gを含し゛共撮器と結
合ループ9との各結合極性を適当ならしめることにより
周波数に関係なく電流位相において一90’となるから
結合ループ9の結合度を適当ならしめることにより減衰
域に減衰極を生せしめることが出来る。
On the other hand, the signal transmitted from the point B to the point 0 via the indirect coupling loop 9 includes the internal conductors 2z and 2g. Since the current phase becomes -90', an attenuation pole can be generated in the attenuation region by appropriately adjusting the degree of coupling of the coupling loop 9.

尚、主回路を伝送する通過域内の信号は、間接結合素子
9及び10を伝送する通過域内の信号1;比し振幅が十
分大なるため0点及びD点における(8) 打消作用の影響はほとんどなく、損失は無視し得る程度
に小である。
Note that the signal in the passband transmitted through the main circuit is the signal 1 in the passband transmitted through the indirect coupling elements 9 and 10; the amplitude is sufficiently large, so the influence of the cancellation effect (8) at point 0 and point D is The loss is negligible.

本発明有極形BPF’の伝送特性は、近似的に次式によ
って表わすことが出来る。
The transmission characteristics of the polarized BPF' of the present invention can be approximately expressed by the following equation.

・・・・・・(1) nが偶数の場合、 nが奇数の場合、 ・・・・(3) 但し、上言己各式において、 L:通過帯域における信号の減衰量 S:通過帯域における許容電圧定在波比(VSWR)(
9) n:関電体共振器の段数(次数)で、本実施例1二おい
では6である。
・・・・・・(1) When n is an even number, When n is an odd number, ・・・・・・(3) However, in each of the above formulas, L: Signal attenuation in the passband S: Passband Allowable voltage standing wave ratio (VSWR) (
9) n: Number of stages (order) of the electrostatic resonator, which is 6 in the second embodiment.

f6f   f。f6f f.

x =  −(−−−) Bw+c   fa   f Bwr+ :許容VSWRの帯域幅 fo:共4辰周波数 f ;任意の伝送周波数 fc:遮断周波数 f−5:減衰極を与える周波数 尚、(2)式におけるReは実数部をとるの意で、(3
)式における。bnは虚数部をとるの意である。
x = −(−−−) Bw+c fa f Bwr+ : Bandwidth of allowable VSWR fo : Common 4-pin frequency f ; Arbitrary transmission frequency fc : Cutoff frequency f-5 : Frequency that gives an attenuation pole Furthermore, in equation (2) Re means taking the real part, (3
) in the equation. bn means taking the imaginary part.

第8図は、従来のBPP と本発明BPI”の伝送特性
(10) を示す曲線図で、横軸は伝送周波数fをMHzで、縦軸
は減衰量ATTをdBで表わしである。図から明らかな
ように本発明BP[i’の特性(実線)は、第1図及び
第2図に示した従来のBPFの特性(鎖線)に較べて減
衰曲線の立上りが遥かに急し、pんである。第8図にお
いてflは下限通過性周波数、f2は上限通過與周波数
である。
FIG. 8 is a curve diagram showing the transmission characteristics (10) of the conventional BPP and the BPI of the present invention, in which the horizontal axis represents the transmission frequency f in MHz, and the vertical axis represents the attenuation amount ATT in dB. As is clear, the characteristics of the present invention BP[i' (solid line) have a much steeper rise in the attenuation curve than the characteristics of the conventional BPF shown in FIGS. 1 and 2 (dashed line), and p In Fig. 8, fl is the lower limit passing frequency, and f2 is the upper limit passing frequency.

以上は6個の十n軸形誘電体共1辰器及び2個の間接結
合回路を以て有極形BPFを構成した場合につき説明し
たが、半同軸形誘電体共撮器の数及び間接結合回路の数
をそれぞれ適当に増減することが出来、間接結合回路の
種類及びその組合せも適当に選択することが出来る。例
えば第3図ないし第5(2)にお(する間接結合素子9
を容量素子を以て形成し、間接結合素子10を結合ルー
プを以て形成してもよく、画素子を共に容量素子或は共
に結合ループを以て形成してもよい。又、結合ループの
代りに半開軸形誘電体共振器の開放部に対応する仕切シ
ールド壁の部分に磁界結合孔を穿って間接結合回路を形
成しても本発明を実施することが出来る。
The above explanation is based on the case where a polarized BPF is configured with six tenn-axis dielectric co-opters and two indirect coupling circuits, but the number of semi-coaxial dielectric co-opters and the indirect coupling circuit The number of indirect coupling circuits can be increased or decreased as appropriate, and the types of indirect coupling circuits and their combinations can also be appropriately selected. For example, the indirect coupling element 9 shown in FIGS. 3 to 5 (2)
may be formed using a capacitive element, and the indirect coupling element 10 may be formed using a coupling loop, or the pixel element may be formed using a capacitive element or a coupling loop. Further, the present invention can be practiced by forming an indirect coupling circuit by drilling a magnetic field coupling hole in the part of the partition shield wall corresponding to the open part of the half-open axial dielectric resonator instead of the coupling loop.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の帯域通過ろ波器の一例を示す図、第2
図は、その等価口路図、第3図ないし第5図は、本発明
の一実施例を示す図、第6図は、その基本等価回路図、
第7図は、そのブロック線図、第8図は、従来及び本発
明帯域通過ろ波器の各伝送特性を示す曲線図で、1:シ
ールドケース、21 ないし2I、:内8[;導体、3
1  ないし3b:誘電体、41 ないし410;段間
結合容量形成用導体片、5I及び52;入出力結合コン
デンサ、61及び6z:入出力同軸端子、7:仕切シー
ルド壁、8I ないし8I、:同調ねじ、9及び10:
間接結合素子、11及び12:孔隙、13:絶縁物、L
l ないしr几;共振器のインダクタンス分、CI及び
Cり:入出力結合容量、C2ないしCL:段間結合容量
、M+ 及びMz:間接結合素子と共振器間の相互イン
ダウ2ンス、Cc:間接結合素子と内部導体間の総合結
合容量、A、B、C及びD;間接結合素子の結合点、P
l  ないしPq:位相回路である。 (13) 第1図 第2図
Figure 1 is a diagram showing an example of a conventional bandpass filter, Figure 2 is a diagram showing an example of a conventional bandpass filter.
3 to 5 are diagrams showing an embodiment of the present invention, and FIG. 6 is a basic equivalent circuit diagram,
FIG. 7 is a block diagram thereof, and FIG. 8 is a curve diagram showing each transmission characteristic of the conventional bandpass filter and the bandpass filter of the present invention. 3
1 to 3b: dielectric, 41 to 410; conductor pieces for forming interstage coupling capacitance, 5I and 52; input/output coupling capacitors, 61 and 6z: input/output coaxial terminals, 7: partition shield wall, 8I to 8I,: tuning Screws, 9 and 10:
Indirect coupling element, 11 and 12: pore, 13: insulator, L
l to r 几: resonator inductance, CI and C: input/output coupling capacitance, C2 to CL: interstage coupling capacitance, M+ and Mz: mutual inductance between the indirect coupling element and the resonator, Cc: indirect Total coupling capacitance between coupling element and internal conductor, A, B, C and D; coupling point of indirect coupling element, P
l to Pq: Phase circuit. (13) Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 複数個の半同軸形誘霜体共振器をコの字形に配設し、結
合容量を介して縦続接続すると共に前記複数個の半同軸
形銹市′体共振器の中の非縦続接続関係にある任意の半
固軸形誘電体共振器間をこ狛らの半開軸形誘電体共振器
の開放空隙部に設けた結合容量素子、結合ループ或は結
合孔を介【2て間接結合せしめて成ることを特徴とする
有極形帯域通過ろ波器。
[Scope of Claims] A plurality of semi-coaxial frost-proof body resonators are arranged in a U-shape, and are cascade-connected via a coupling capacitance, and inside the plurality of semi-coaxial frost-proof body resonators. Any non-cascaded semi-solid axial dielectric resonators can be connected via coupling capacitance elements, coupling loops or coupling holes provided in the open gaps of these half-open axial dielectric resonators. What is claimed is: 1. A polarized bandpass filter characterized in that the filter is formed by indirectly coupling two polarized bandpass filters.
JP11728981A 1981-07-27 1981-07-27 Polarized type band pass filter Pending JPS5819002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11728981A JPS5819002A (en) 1981-07-27 1981-07-27 Polarized type band pass filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11728981A JPS5819002A (en) 1981-07-27 1981-07-27 Polarized type band pass filter

Publications (1)

Publication Number Publication Date
JPS5819002A true JPS5819002A (en) 1983-02-03

Family

ID=14708056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11728981A Pending JPS5819002A (en) 1981-07-27 1981-07-27 Polarized type band pass filter

Country Status (1)

Country Link
JP (1) JPS5819002A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664872B2 (en) * 2001-07-13 2003-12-16 Tyco Electronics Corporation Iris-less combline filter with capacitive coupling elements
KR101422722B1 (en) * 2013-02-19 2014-07-24 주식회사 이너트론 Notch coupling RF filter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664872B2 (en) * 2001-07-13 2003-12-16 Tyco Electronics Corporation Iris-less combline filter with capacitive coupling elements
KR101422722B1 (en) * 2013-02-19 2014-07-24 주식회사 이너트론 Notch coupling RF filter

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