JPS58180972A - Radiation detector - Google Patents

Abstract

PURPOSE:To elevate the reliability with an easy manufacturing process by arranging a plurality of radiation detecting areas for detecting radiation and an electric charge transferring area for storing and reading out output signals obtained from these areas on one semiconductor substrate. CONSTITUTION:A radiation detecting areas A and a CCD area B are formed in on silicon substrate 11. The radiation detection areas A are divided into several parts with several signal electrodes 12, outputs of which are introduced to the CCD area B through a wire on the substrate 11. With such an arrangement, the radiation detecting area and the CCD area are integrated on one substrate thereby elevating the reliability with an easier manufacturing process.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a radiation detector KII that detects X-rays, #r49aα rays, β rays, and the like.

[Technical background of the invention and its problems]

Figure 1 is a conceptual diagram of a prior art example for measuring the one-dimensional intensity distribution of radiation.
is the signal electrode, and the output signal obtained from each signal electrode is sent to the CCD (Charg@C@t) via the lead wire 3.
+pled Dsvles) 4 is introduced into the input dart 5, the parallel output signal is converted into a serial signal by the ζOCCD 4 and transferred to the signal processing section 6, and the predetermined C) No. 9 processing is performed and the display device 1 displays the signal. In this way, this measurement system aims to measure the one-dimensional radiation intensity distribution by using the signal accumulation and transfer function of COD. The detection element is a semiconductor radiation detection element (P
NIi*ju, PIN! ll, 9-sided barrier type, etc.).

However, the configuration shown in Figure 1 requires advanced wiring technology to connect the -dimensional radiation detection element and the minute CCD with lead wires, which is not only disadvantageous in terms of manufacturing cost but also reduces reliability. -) has some disadvantages.

[Purpose of the invention]

An object of the present invention is to provide a radiation detector for measuring one-dimensional or two-dimensional radiation intensity distribution that is highly reliable and easy to manufacture.

[Invention 0Ill! ) The present invention is characterized in that a separate and independent radiation detection area and a charge transfer area for accumulating and transferring output signals thereof are provided together on a single semiconductor substrate.

[Invention O effect]

(1) The radiation detection region and the charge transfer region are integrated into one semiconductor substrate, and connection by lead wires is not required, which simplifies the manufacturing process.

(2) For the same reason, it is strong against vibration forces and improves reliability.

[Embodiments of the invention]

The mental image of the present invention O Embodiment 0 IIt is shown in Diagram 2 of the irises. (-)
The figure is a plan view, and the figure is a schematic sectional view. In the figure.

A JJFi silicon substrate is used, and a radiation detection area and a CCDCD area are formed within a single substrate 11. The radiation detection area B is divided into a number of loincloths by a plurality of signal electrodes 11, and the output of each signal electrode 12 is guided to the COD area B through wiring on the base 11. 131
~131 is a P on the substrate 11 so as to widen the CCDCD area.
This is a radiation-value shielding layer embedded with b.

The operating principle is not much different from that of the conventional example, and charges generated in the silicon substrate due to radiation incident parallel to the substrate are transferred to the signal electrode 1.
In this method, the signals are collected in the CCDCD domain and subjected to parallel-to-serial conversion to obtain an output signal.

In order to explain the operating principle in more detail, FIG. 3 shows a cross-sectional view of the main structure when a p-type silicon substrate is used.

The signal electrode 12 is, for example, Aj! A barrier electrode is formed using the IIK depletion layer under the barrier electrode. For example, an A11-Go electrode is provided as the organic electrode 14 on the back surface of the substrate. 16 is a 5to2 film, 16 is a single layer serving as an input diode of the CCD, 11 is an input f-) electrode, and 18 is a transfer r-) electrode. When radiation is incident, electron-hole pairs are generated in the silicon substrate 11, and the electrons are collected by the signal electrode 12 and input through the layer 16゜f-) Transferred to the electrode 11 r-) Injected under the electrode 18 be done. Electrons injected in parallel from each signal electrode 12 are -
For example, 3-phase 4, transfer r-) where φ1 to φ3 are applied
The signal is transferred through the silicon substrate lI by the electrode xi and output as a serial signal. This output signal is sent to the signal processing section as in the conventional case, and is finally measured as a one-dimensional radiation intensity distribution.

In this way, according to this embodiment, the radiation detection area and the CCD
Since the area and the area are integrated into a single substrate, manufacturing is easy, and the reliability is also high.

Note that the present invention is not limited to the above embodiments, and various modifications can be made as listed below.

(1) Semiconductor substrates include G, Al, and CdT in addition to St.
・.

It can be arbitrarily selected such as In 8b.

(2) Example - This is a configuration for measuring a dimensional radiation intensity distribution, but by subdividing the signal electrode two-dimensionally, a two-dimensional radiation intensity distribution can be measured. However, in this case, the incident direction of the radiation is perpendicular to the semiconductor substrate.

(3) When radiation is incident from the direction of the broken arrow E in FIG. 2 (,), it is possible to measure the penetrating power of the radiation and perform energy analysis.

(4) In addition to CCD, the configuration of the charge transfer region includes MOg type and CID 31 (Charge Injea).
tion Davies), BBD type (Buek@t
Br1gad+e Dsvive) etc. can be applied.

[Brief explanation of the drawing]

Figure 1 is a conceptual diagram of the conventional example, Figure 2 (a) * (b)
FIG. 3 is a plan view and a schematic cross-sectional view of an embodiment of the present invention, and FIG. 3 is a cross-sectional view showing the main structure in detail. 11...Silicon substrate, A-...Radiation detection area, B
... CCD area, 12 ... Signal electrode, 131-1
3゜... Radiation IIa shielding layer, 14... Ohmic electrode, 15-8102 film, I 6 ・n+ layer, 1 F-...
Input ff-) electrode, 18... Transfer r-) electrode.

Claims (4)

[Claims] (1) Radiation detection characterized in that a single semiconductor substrate is provided with a plurality of radiation detection regions for detecting radiation and a charge transfer region for accumulating and reading output signals obtained from each detection region. vessel. (2) The radiation detector according to claim 1, wherein the charge transfer region converts parallel output signals obtained from a plurality of radiation detection regions into serial signals. (3) The radiation detector according to claim 1, wherein the incident direction of the radiation is parallel to the semiconductor substrate. (4) The radiation detector according to claim 1, wherein a radiation shielding material is embedded around the charge transfer region of the semiconductor substrate.