JPS58168900U - semiconductor voltage regulator - Google Patents

semiconductor voltage regulator

Info

Publication number
JPS58168900U
JPS58168900U JP1982064368U JP6436882U JPS58168900U JP S58168900 U JPS58168900 U JP S58168900U JP 1982064368 U JP1982064368 U JP 1982064368U JP 6436882 U JP6436882 U JP 6436882U JP S58168900 U JPS58168900 U JP S58168900U
Authority
JP
Japan
Prior art keywords
field coil
voltage regulator
power transistor
semiconductor voltage
suppressor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1982064368U
Other languages
Japanese (ja)
Inventor
史朗 岩谷
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP1982064368U priority Critical patent/JPS58168900U/en
Publication of JPS58168900U publication Critical patent/JPS58168900U/en
Pending legal-status Critical Current

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Landscapes

  • Control Of Direct Current Motors (AREA)
  • Control Of Eletrric Generators (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来装置を示す電気回路図、第2図は点火装置
から発生するサージ電圧を示す波形図、第3図はこの考
案の一実施例を示す電気回路図、第4図はこの考案の装
置に於けるサージ電圧印加時のランプ端子の電圧を示す
波形図である。 図中、1は交流発電機、101は電機子コイル、102
は界磁コイル、2は全波整流器、201は第1正側出力
端、202は第2正側出力端、203は負側出力端、3
は半導体電圧調整器、301は調整抵抗、302は分圧
抵抗、303はゼナーダイオード、304はバ不アス抵
抗、305は負帰還コンデンサ、306は制御用トラン
ジスタ、307はベース抵抗、308はサプレッション
ダイオード、309はドライバートランジスタ、310
はパワートランジスタ、320は接地端子、321は界
磁コイル端子、322はランプ端子、4は点火装置、5
は蓄電池、6はキースイッチ、7は充電表示用ランプ、
311はサブ −レツシコンダイす−ドとして用いるア
バランシェダイオードを示す。尚、各図中同一符号は同
−又は相当部分を示す。  −
Fig. 1 is an electric circuit diagram showing a conventional device, Fig. 2 is a waveform diagram showing a surge voltage generated from an ignition device, Fig. 3 is an electric circuit diagram showing an embodiment of this invention, and Fig. 4 is an electric circuit diagram showing this invention. FIG. 3 is a waveform diagram showing the voltage at the lamp terminal when a surge voltage is applied in the device of FIG. In the figure, 1 is an alternator, 101 is an armature coil, 102
2 is a field coil, 2 is a full-wave rectifier, 201 is a first positive output end, 202 is a second positive output end, 203 is a negative output end, 3
is a semiconductor voltage regulator, 301 is an adjustment resistor, 302 is a voltage dividing resistor, 303 is a Zener diode, 304 is a bias resistor, 305 is a negative feedback capacitor, 306 is a control transistor, 307 is a base resistor, 308 is a suppression Diode, 309 is driver transistor, 310
is a power transistor, 320 is a ground terminal, 321 is a field coil terminal, 322 is a lamp terminal, 4 is an ignition device, 5
is a storage battery, 6 is a key switch, 7 is a charging indicator lamp,
Reference numeral 311 indicates an avalanche diode used as a sub-resistance diode. Note that the same reference numerals in each figure indicate the same or corresponding parts. −

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)界磁コイルを有する交流発電機の整流出力により
充電される蓄電池、上記界磁コイルに流れる電流を断続
制御するパワート・ランジスタ、上記界磁コイルと並列
に接続され、界磁コイルに生じる誘導エネルギーを吸収
するサプレッサー素子、上記パワートランジスタを断続
制御し上記発電機の出力電圧を所定値に制御する制御用
回路とを備えた半導体電圧調整装置に於いて、上記サプ
レッサー素子を、アバランシェダイオードにより構成し
た半導体電圧調整装置。
(1) A storage battery that is charged by the rectified output of an alternating current generator that has a field coil, a power transistor that intermittently controls the current flowing through the field coil, and a power transistor that is connected in parallel with the field coil and generates electricity in the field coil. In a semiconductor voltage regulator equipped with a suppressor element that absorbs inductive energy and a control circuit that intermittently controls the power transistor and controls the output voltage of the generator to a predetermined value, the suppressor element is replaced by an avalanche diode. The constructed semiconductor voltage regulator.
(2)上記サプレッサー素子としてのアバランシェダイ
オードに於いて、その逆耐圧が50〜100Vのアバラ
ンシェダイオードによりなる実用新案登録請求の範囲第
1項記載の半導体電圧調整装置。
(2) The semiconductor voltage adjustment device according to claim 1, which is a utility model registration, and comprises an avalanche diode as the suppressor element, the reverse breakdown voltage of which is 50 to 100V.
JP1982064368U 1982-04-30 1982-04-30 semiconductor voltage regulator Pending JPS58168900U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1982064368U JPS58168900U (en) 1982-04-30 1982-04-30 semiconductor voltage regulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982064368U JPS58168900U (en) 1982-04-30 1982-04-30 semiconductor voltage regulator

Publications (1)

Publication Number Publication Date
JPS58168900U true JPS58168900U (en) 1983-11-10

Family

ID=30074403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982064368U Pending JPS58168900U (en) 1982-04-30 1982-04-30 semiconductor voltage regulator

Country Status (1)

Country Link
JP (1) JPS58168900U (en)

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