JPS58165423A - Overcurrent preventing device for semiconductor switch - Google Patents

Overcurrent preventing device for semiconductor switch

Info

Publication number
JPS58165423A
JPS58165423A JP2491183A JP2491183A JPS58165423A JP S58165423 A JPS58165423 A JP S58165423A JP 2491183 A JP2491183 A JP 2491183A JP 2491183 A JP2491183 A JP 2491183A JP S58165423 A JPS58165423 A JP S58165423A
Authority
JP
Japan
Prior art keywords
semiconductor switch
overcurrent
switch
current
choke coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2491183A
Other languages
Japanese (ja)
Inventor
ルツツ・ベルクマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of JPS58165423A publication Critical patent/JPS58165423A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1213Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 この発鴨は半導体スイッチの過電流防止装置に関する。[Detailed description of the invention] This patent relates to an overcurrent prevention device for semiconductor switches.

半導体スイッチの過電流防止装置はBBCシリコンl1
vLtaハンドブ、り(BBC−8111zlum−8
tromr+ch’t@r4andbuch ) 、 
1971年版P286乃至P289に開示されている。
Overcurrent prevention device for semiconductor switch is BBC silicon l1
vLta Handbook (BBC-8111zlum-8
tromr+ch't@r4andbuch),
It is disclosed in 1971 edition P286 to P289.

過電流を遮断するためには例えば直流開閉器が用いられ
る。
For example, a DC switch is used to interrupt the overcurrent.

電流成分がしIJ−:X−規準として作用する。長く連
続する過電流に封する手段として電流を許容最大連続電
流の半9分以下の[K制限する定電流tm**を用いる
ことができる。この電臘制限筐を越える場合電流は遮断
される。従来の過電流防止装置の場合、半導体スイッチ
を流れる電流が利用される。即ち、この電流が所定限界
値を越えたとき限界スイッチが回路を鐘断する。それに
よって、半導体スイッチは定格以上大容量としなくても
よく融断電流は正常動作中の最大電流値以下に保持され
る。しかしながら、従来の装置によると、正常動作中に
誤って遮断される處れがある。更に、過電流検知時点か
ら!断終了するまでの時間に問題がある。この時間中に
遮断I#ILfI/を値以上の短絡電流が眞れる。この
ため、半導体スイッチ社定格値以上のものを必要とする
。これに伴うて電流制限器として半導体スイッチに直列
に設けられるチョークコイルは大型化する。チョークコ
イルの大型化はコスト的に不利となる。
The current component acts as an IJ-:X- criterion. As a means to prevent a long continuous overcurrent, a constant current tm** that limits the current to less than half the maximum allowable continuous current (tm**) can be used. If this power limit is exceeded, the current is cut off. In conventional overcurrent protection devices, the current flowing through a semiconductor switch is utilized. That is, the limit switch disconnects the circuit when this current exceeds a predetermined limit value. As a result, the semiconductor switch does not have to have a larger capacity than its rated value, and the fusion current is kept below the maximum current value during normal operation. However, with conventional devices, there is a risk that they may be accidentally shut off during normal operation. Furthermore, from the point of overcurrent detection! There is a problem with the time it takes to complete the disconnection. During this time, a short circuit current exceeding the value of the interrupt I#ILfI/ is likely to occur. For this reason, it is necessary to have a value that is higher than the rated value by Semiconductor Switch Co., Ltd. As a result, the choke coil, which is provided in series with the semiconductor switch as a current limiter, becomes larger. Increasing the size of the choke coil is disadvantageous in terms of cost.

従って、この発明の目的は発生し九過11f/Lを外部
において敏速に検知する半導体スイッチの1: 過電流防止装置を提供す:ることにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an overcurrent prevention device for a semiconductor switch that can quickly detect an overcurrent of 11f/L occurring externally.

1、。1.

この発明によると、過電流°を外部的に敏速に検知する
ことによって電流を瞬時Kj1m断できる。
According to this invention, the current can be instantaneously cut off by Kj1m by quickly externally detecting the overcurrent.

過電流の検知と遮断との間における電流上昇時間が蜘か
くなるので半導体スイッチ及びチ、−クコイルシ大型化
する必要がなくなる。電位分離による電圧検知が非常に
簡単になる。チー−クコイルの検出巻線(補助巻線)を
九はチョークコイルに並列接続される計器用変成器(分
離変成@)が小蓋化で自る。
Since the current rise time between detection and cutoff of overcurrent is longer, there is no need to increase the size of the semiconductor switch and circuit board. Voltage detection by potential separation becomes very simple. The detection winding (auxiliary winding) of the cheek coil is connected in parallel to the choke coil, and the instrument transformer (separate transformer @) is made into a small lid.

以下図面を参照してこの発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.

第1図には、半導体スイッチの過電流防止装置の第1実
施例が示されている。1象限直流制御ユニy)の正極入
力端子lと負極入力端子2との間に直流電IIGが接続
される。制御ユニ。
FIG. 1 shows a first embodiment of an overcurrent protection device for a semiconductor switch. A DC current IIG is connected between the positive input terminal l and the negative input terminal 2 of the one-quadrant DC control unit y). control uni.

h、D正及び負極、力端子は参照符号、メア示されてい
る。正極入力端子1及び正極出力端子3は半導体スイッ
チ5及びチ、−クコイルーO直列回路を介、、シて互に
接続されている。半導体′11 スイッチ5として例えはトランジスタまたは強]、、l
: 制消弧可能サイ1.リスタが用いられるー負極入力端子
2及び負極出力端子4は互に直ll!接続される。
h, D positive and negative poles, power terminals are indicated by reference numerals, mare. The positive input terminal 1 and the positive output terminal 3 are connected to each other through a semiconductor switch 5 and a series circuit of circuits 1, 2, and 3. Semiconductor '11 As the switch 5, for example, a transistor or a
: Arc controlled and extinguished rhinoceros 1. A lister is used - negative input terminal 2 and negative output terminal 4 are directly connected to each other! Connected.

ダイオード1はカソード儒において半導体スイッチ5と
チ、−クコイルgo共通接続点に接続され、アノ−)’
IIにおいて負極入力端子2KWj!絖される。出力端
子1.4間に負荷8が接続される。負荷aは誘導性イン
ピーダンス成分及び抵抗性インピーダンス成分を有し場
合によりて電磁力を発生する(例えd負荷8は駆動モー
タである)。
The diode 1 is connected to the semiconductor switch 5 and the common connection point of the semiconductor switch 5 at the cathode, and the diode 1 is connected to the common connection point of the semiconductor switch 5 and the coil go.
In II, negative input terminal 2KWj! It is threaded. A load 8 is connected between output terminals 1 and 4. Load a has an inductive impedance component and a resistive impedance component, and may generate electromagnetic force (for example, load d is a drive motor).

チョークコイル6は出力端子3,4関に短絡が生じた場
合に電流上昇速度を制限するよう作用する。チ、−クプ
イル6及び負荷8を介して流れる 電流は!で示されて
いる。
The choke coil 6 acts to limit the current rising speed when a short circuit occurs between the output terminals 3 and 4. What is the current flowing through the - cupill 6 and load 8? It is shown in

過電at検出するためチョークコイル6は検出巻1m#
を有している。検出@ll#の出力端子社限界スイ、チ
(電圧指示針)10fC接続される。限界スイッチ1#
は出力側において駆動ユニット11を介して半導体スイ
ッチ6を制御する。駆動ユニ、トll紘入力儒において
限界スイッチ10の出力信号A及び正常駆動信号8を受
ける。
The choke coil 6 has a detection winding of 1 m# to detect overcurrent at.
have. The output terminal of detection @ll# is connected to the limit switch (voltage indicator) 10fC. Limit switch 1#
controls the semiconductor switch 6 via the drive unit 11 on the output side. The drive unit receives the output signal A of the limit switch 10 and the normal drive signal 8 at the input terminal.

正常動作の場合、チ曹−クコイル6は負荷Iに直列に接
続されるので負荷go比較的大きいインピーダンスによ
)チョークコイルCrcおける電力降下が小さい、電流
変化速度−1正常動作においては非常に小さいが出力端
子3#44間に短縮が生じ九場合、電流変化速度が非常
に大きくな抄チ、−クコイル6に全回路電圧が印加され
る。チョークコイル−に生じた電圧紘、検出壱纏りによ
りて検出されこO測定電圧は限界スイッチ10によりて
検知される。限界スイッチled高電圧を得丸場会、直
ちに出力信号ムを制御具=、)JJに供給する。これに
よシ、短絡電Rが所定O層断電滝値を超過する前に既に
線断動作に入る。電圧は短絡電流を素速く示すので電圧
捌定紘短、絡電概を検出すると亀の電流測定よ)非常に
有効である。短絡検知の丸めの電流測定がお11われな
いので正常!流制限籟を着かに越え良小過電Rによる誤
動作は回避される。
In normal operation, the choke coil 6 is connected in series with the load I, so the power drop in the choke coil Cr is small (due to the relatively large impedance of the load), and the current change rate - 1 is very small in normal operation. However, when shortening occurs between the output terminals 3 and 44, the entire circuit voltage is applied to the coil 6 where the current rate of change is very large. The voltage produced across the choke coil is detected by a detection circuit, and the measured voltage is detected by a limit switch 10. When the limit switch LED receives high voltage, it immediately sends an output signal to the control device =,)JJ. Accordingly, before the short-circuit current R exceeds the predetermined O layer disconnection level value, the line disconnection operation is already started. Voltage quickly indicates short-circuit current, so it is very effective to detect short-circuit voltage and short-circuit current (like a tortoise current measurement). The rounded current measurement for short circuit detection does not occur, so it is normal! Malfunctions due to overcurrent R, even if the current limit is exceeded, are avoided.

第2図を参照して半導体スイ、ツチの過電流防止装置の
第2実施例tm明する。この実施例によると検出変圧器
IJの1次巻線がチョークコイル6に並列接続される。
With reference to FIG. 2, a second embodiment of the overcurrent prevention device of the semiconductor switch will be explained. According to this embodiment, the primary winding of the detection transformer IJ is connected in parallel to the choke coil 6.

検出変圧器J2の2次巻線は限界スイッチJ)K*l!
され、高電圧を受は九場合に制御エニ、)31に出力信
号ムを供給する。過電流保護装置own能は第1図の実
施例と同じである・ 第1図及びs2図の両実施例によるとチョークコイル6
0電圧測定が非常に簡単な方法でしかも電位無関係にお
仁なえるという利点がある。
The secondary winding of the detection transformer J2 is a limit switch J)K*l!
When the high voltage is applied, the control unit (9) supplies an output signal to (31). The overcurrent protection device own capability is the same as the embodiment shown in Fig. 1.According to both the embodiments shown in Fig. 1 and S2, the choke coil 6
This method has the advantage that zero voltage measurement is a very simple method and can be performed regardless of potential.

第1図及び第2図による実施例の場合、半導体スイッチ
を有する簡単な直流制御器の特別な事情から発している
。過電流保護装置は半導体スイッチの応用分野、41に
制御及び駆動技術におけるノ4ルス輻変調電力制御素子
(チw y )譬)に有効に適用できる0、。
The embodiment according to FIGS. 1 and 2 arises from the special circumstances of simple DC controllers with semiconductor switches. The overcurrent protection device can be effectively applied to the application field of semiconductor switches, 41 and 41 pulse modulation power control devices in control and drive technology.

□ 第3図には4象隈直流制御器、や場合の過電流’、、、
’、、’、:、、l″l、、:”’、1′□・・保護装
置の実施例が示されてい為・互に結合され九直流電源G
1及びG2が設けられる。直流電源070自自端子は第
1半導体スイッチ5゜−1 1及び第1メイオーP L−、J K接続される正極を
構成する。直流電源G10自由端子は第2半5−2  
                 9・2導体スイ、
チ[74及び第2メイオーPy紘他方側において互Kl
!続される。これらO共通伽絖点にチ、−クコ仁1の一
端が11!続され、チ、−タコイルi0倫端紘正極出力
端子4に接続される0両直諷電11GJ、GJ+ID共
過接続点は正極出力端子1に接続される。出力端子1゜
4間には負荷1が**される。チ、−タツイルdは検出
巻線#を有し、これは限界スイッチ10に後続される。
□ Figure 3 shows a 4-quadrant DC controller and overcurrent in the case of
',,',:,,l″l,,:”',1'□...Example of the protection device is shown. Nine DC power supplies G are connected to each other.
1 and G2 are provided. The own terminal of the DC power supply 070 constitutes a positive terminal connected to the first semiconductor switch 5°-11 and the first main electrodes PL- and JK. DC power supply G10 free terminal is second half 5-2
9.2 conductor switch,
Chi [74 and 2nd Mayo Pyhiro on the other side
! Continued. These common points are 11! The 0 and 0 direct lines 11GJ, GJ+ID, which are connected to the positive output terminal 4 of the coil i0 and the terminal 4, are connected to the positive output terminal 1. Load 1 is applied between output terminals 1 and 4. The circuit d has a detection winding #, which is followed by a limit switch 10.

@界スイッチiao出力信号及び正常駆動用駆動信号8
は制御ユニ、ト11fC供給され、ζO制御工5=、 
) J Jは半導r−1,1g−2 体スイッチ   ′  、 を駆動制御する。
@field switch iao output signal and normal drive drive signal 8
is supplied with the control unit, t11fC, and ζO control unit 5=,
) JJ drives and controls the semiconductor r-1, 1g-2 body switches ', .

、、: 第35iの過電流保1IillI鐙の機能は第1図のそ
ゎjFII*”e6!、4人・1・
,,: The function of the overcurrent protection stirrup of No. 35i is as shown in Fig. 1, 4 people, 1,

【図面の簡単な説明】[Brief explanation of the drawing]

第1gは10発明の一実施例に従う大半導体スイッチの
通電#l肪止装置toBmH4s第2図は他の実施例に
従りた半導体スイッチの過電流防止装置の一部の回路図
、そして第3図は他の実施例。 S、6,1.15.1・・・半導体スイッチ、6・・・
チ、−り;イル、1・・・負荷、り・・・検出巻線、1
0・・・限界スイッチ、11・・・態動エニ、)、12
・・・検出変圧器、G、01.G!・・・直流電源。
1g is a circuit diagram of a portion of an overcurrent prevention device for a semiconductor switch according to another embodiment; The figure shows another example. S, 6, 1.15.1...Semiconductor switch, 6...
I...Load, I...Detection winding, 1
0... Limit switch, 11... Behavior any, ), 12
...detection transformer, G, 01. G! ...DC power supply.

Claims (1)

【特許請求の範囲】 (1)  電流上昇速度を制限するチョークコイルに直
列に設け゛られる半導体スイッチを介して流れる過電流
を制iitた紘鐘断する手段が設けられる半導体スイッ
チの過電流防止装置において、前記チョークコイル(姉
の降下電圧を検出する装置(り、12)が゛限界スイ、
チ鱒に接続されるととを特徴とする半導体スイッチの過
電RM止装置、          ・    ゛(2
)  前記チ′、−クコイル(Il)は電圧を検出する
検出巻@(9)を有すること“を特徴とする特許請求O
Sg第1第1記′記載導体スイッチO′過電流訪゛止装
置。 (3)  前記チョークコイル(6)は電圧を検出する
計器用変成器に並列に接続されることを特徴とする特許
請求O範囲第1項記載の半導体スイ。 チの過電流防止装置。 (4)  前記限界スイッチQ4は出力側において前−
半導゛体スイ、チ(5)の駆動手段C11)llc*続
されることを特徴とする特許請求の範囲一1項乃至第3
項のいずれかに記−の半導体スイッチの過電′流防市装
置□。  −
[Scope of Claims] (1) An overcurrent prevention device for a semiconductor switch that is provided with a means for cutting off an overcurrent flowing through a semiconductor switch that is provided in series with a choke coil that limits the speed of current rise. In this case, the choke coil (device (12) for detecting the voltage drop of the older sister) has a limit switch.
An overcurrent RM stop device for a semiconductor switch, which is connected to a trout, and is characterized by:
) The above-mentioned coils (Il) have a detection winding (9) for detecting voltage.
Conductor switch O' overcurrent stop device described in Sg 1, No. 1. (3) The semiconductor switch according to claim 1, wherein the choke coil (6) is connected in parallel to an instrument transformer for detecting voltage. overcurrent prevention device. (4) The limit switch Q4 is connected to the front side on the output side.
Claims 1 to 3 are characterized in that the driving means C11) of the semiconductor switch (5) are connected to each other.
Overcurrent prevention device for semiconductor switches as described in any of the above. −
JP2491183A 1982-02-20 1983-02-18 Overcurrent preventing device for semiconductor switch Pending JPS58165423A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE32062664 1982-02-20
DE19823206266 DE3206266A1 (en) 1982-02-20 1982-02-20 Overcurrent protection device for a semiconductor switch

Publications (1)

Publication Number Publication Date
JPS58165423A true JPS58165423A (en) 1983-09-30

Family

ID=6156346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491183A Pending JPS58165423A (en) 1982-02-20 1983-02-18 Overcurrent preventing device for semiconductor switch

Country Status (2)

Country Link
JP (1) JPS58165423A (en)
DE (1) DE3206266A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193122A (en) * 2008-02-12 2009-08-27 Denso Corp Abnormal current detection circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85108840B (en) * 1985-01-28 1988-07-06 西门子公司 Current monitoring for switching regulator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE472909A (en) * 1946-04-29
GB1287989A (en) * 1969-11-10 1972-09-06
DE2242415C2 (en) * 1972-08-29 1982-06-03 Brown, Boveri & Cie Ag, 6800 Mannheim Circuit arrangement for protecting an inverter
DE2338918C3 (en) * 1973-08-01 1982-06-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Tripping device
CH596708A5 (en) * 1977-04-07 1978-03-15 Oerlikon Buehrle Ag

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193122A (en) * 2008-02-12 2009-08-27 Denso Corp Abnormal current detection circuit

Also Published As

Publication number Publication date
DE3206266A1 (en) 1983-09-01

Similar Documents

Publication Publication Date Title
US4363064A (en) Overcurrent protection system
JPH08140260A (en) Power supply
US5038244A (en) Device for overvoltage protection of a rectifier bridge feeding a d.c. motor and for control of the d.c. motor during emergency braking
JPH05137253A (en) Abnormal voltage detector/controller
US4736264A (en) Primary switched-mode power supply unit
US3571659A (en) Switching device for power supply circuit
JPS58165423A (en) Overcurrent preventing device for semiconductor switch
JPH0139314B2 (en)
US6697243B1 (en) Under voltage release with an electromagnet and clocked holding current circuit
JP3395530B2 (en) Leakage detection device of earth leakage breaker
JPS6231322A (en) Power source breaker
JP2002247865A (en) Ac chopper
JPS6335121A (en) Overvoltage protection circuit for various electric circuit devices of gadgets of pinball game machine
JP3214314B2 (en) Power supply circuit
JPS597479A (en) Power source for welding
SU763999A1 (en) Device for controlling and monitoring condition of dc load circuit
US3437879A (en) Transient protection for semiconductor device
SU832644A2 (en) Device for deferential protection of dc network portions
JPH0632755Y2 (en) AC thyristor power protection circuit
JPH08317561A (en) Harmonic wave suppressor
JPH08194550A (en) Power source unit
JPS60167618A (en) Input reverse connection protecting circuit for power source
JPH0344504B2 (en)
JPH046080B2 (en)
JPH01144313A (en) Over voltage protecting circuit