JPS58161980A - Composite ceramic material - Google Patents

Composite ceramic material

Info

Publication number
JPS58161980A
JPS58161980A JP4402282A JP4402282A JPS58161980A JP S58161980 A JPS58161980 A JP S58161980A JP 4402282 A JP4402282 A JP 4402282A JP 4402282 A JP4402282 A JP 4402282A JP S58161980 A JPS58161980 A JP S58161980A
Authority
JP
Japan
Prior art keywords
ceramic material
material according
composite ceramic
ceramic
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4402282A
Other languages
Japanese (ja)
Other versions
JPS6236995B2 (en
Inventor
影山 直文
浅川 益雄
良和 内海
建 佐藤
懸山 弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4402282A priority Critical patent/JPS58161980A/en
Publication of JPS58161980A publication Critical patent/JPS58161980A/en
Publication of JPS6236995B2 publication Critical patent/JPS6236995B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Circuit Breakers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は基材セラミック表面を表面処理または改質して
表面付着性(濡れ性)を減少させた複合セラミック材料
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a composite ceramic material whose surface adhesion (wettability) is reduced by surface treatment or modification of the base ceramic surface.

従来のセラミック材料を用いた遮断器用ノズルの一例を
第1図により説明すると、単一のセラミックまたはテフ
ロン基材/中にSF、ガス等コが充填しており、この部
分でアークが発生し電極金属の蒸発により金属粉、金属
弗化物、金属酸化物等を生成する。図中、基材lがセラ
ミックの場合、アークにより生成した上記生成物が基材
lの表面に付着し、沿面耐電圧等の表面特性を低下させ
る。
An example of a circuit breaker nozzle using a conventional ceramic material is explained with reference to Fig. 1.A single ceramic or Teflon base material is filled with SF, gas, etc., and an arc is generated in this part and the electrode Metal powder, metal fluoride, metal oxide, etc. are produced by evaporation of metal. In the figure, when the base material 1 is made of ceramic, the above-mentioned products generated by the arc adhere to the surface of the base material 1, reducing surface characteristics such as creeping withstand voltage.

また、基材/がテフロンの場合、アークによる生成物の
付着は少ないものの耐熱性が低いため内部から発泡した
り、クラック発生現象を生じ消耗が大きく、また機械的
強度や硬さが不足しており、大電流アーク迩断器の場合
設計が難しいという欠点があつ九。
In addition, when the base material is Teflon, although there is little adhesion of products due to arcing, the heat resistance is low, so foaming occurs from inside, cracking occurs, and wear and tear is large, and mechanical strength and hardness are insufficient. However, the drawback is that it is difficult to design a large current arc breaker.

上述したように、従来のセラミック材料、例えば遮断器
用セラミック材料は、テフロン等の有機遮断器用材料と
比較して、アーク遮断時における電極金属の蒸発により
生成する金属粉などの付着物の表面付着性(濡れ性)が
大きく、例えば8P。
As mentioned above, conventional ceramic materials, such as ceramic materials for circuit breakers, have a higher tendency to adhere to the surface of deposits such as metal powder generated by evaporation of electrode metal during arc interruption than organic circuit breaker materials such as Teflon. (wettability) is large, for example 8P.

ガス遮断器用ノズルとして使用した場合、金属弗化物を
セラミック内面に付着して沿面耐電圧等の表面特性を低
下させ易いという欠点があった。このため従来、表面付
着性の小さいテフロン(Pテtrz)が使用されてきた
。しかし、テフロン材料は大電流のアークに曝露された
場合、テフロン内部より発泡したり、クラック発生現象
を生じ消耗が大きくなることや耐熱性が不十分なこと等
の欠点があり、一層の性能向上が望まれて−た。
When used as a nozzle for a gas circuit breaker, there is a drawback that metal fluorides tend to adhere to the inner surface of the ceramic, resulting in a decrease in surface characteristics such as creeping withstand voltage. For this reason, Teflon (Ptetrz), which has low surface adhesion, has conventionally been used. However, Teflon materials have drawbacks such as foaming from inside the Teflon, cracking, and increased wear when exposed to a large current arc, as well as insufficient heat resistance. was desired.

本発明はセラミック材料の基材セラミック表面を表面処
理または改質して、上記従来セラミックの欠点である表
面付着性(濡れ性)を減少させ、かつセラミック材の利
点であるすぐれた機械強度、固さ、高温までの耐熱安定
性、耐消耗性郷を生かすことにより、大電流アーク遮断
に適した新たなセラミック材料を提供するものである。
The present invention treats or modifies the base ceramic surface of a ceramic material to reduce the surface adhesion (wettability), which is a drawback of conventional ceramics, and also provides excellent mechanical strength and hardness, which are the advantages of ceramic materials. By taking advantage of its heat resistance, stability up to high temperatures, and wear resistance, it provides a new ceramic material suitable for interrupting large current arcs.

本発明はセラミック材料の基材セラミック表面を表面処
理した複合セラミック材料に関するものである。表面処
理は該基材セラミック表面に弗素系樹脂、ポリエチレン
勢を含む有機物をコーティングして行う、または該基材
セラミック表面に界面活性剤をコーティングして行う、
または該基材セラミック表面をあらかじめ適当なアーク
曝露雰囲気下で改質処理して行う、または該基材セラミ
ック表面に別種のセラミック(弗化物、酸化物、窒化物
、炭化物、ホウ化物、リン化物)をコーティングまたは
混入して行う、または該基材セラミック表面を放射線若
しくは電磁波照射等の物理化学的方法により行う、また
セラミック材料がアルミナを92%以上含んでもよく、
またセラミック材料の用途がガス遮断器のアーク発生部
のフローガイド用ノズルを含む複合セラミック材料に関
する。
The present invention relates to a composite ceramic material in which the surface of a ceramic base material of a ceramic material is surface-treated. The surface treatment is carried out by coating the surface of the base ceramic with an organic substance containing a fluorine-based resin or polyethylene, or by coating the surface of the base ceramic with a surfactant.
Alternatively, the surface of the base ceramic is modified in advance in an appropriate arc exposure atmosphere, or the surface of the base ceramic is coated with another type of ceramic (fluoride, oxide, nitride, carbide, boride, phosphide). The ceramic material may contain 92% or more of alumina.
Further, the application of the ceramic material relates to a composite ceramic material including a flow guide nozzle of an arc generating part of a gas circuit breaker.

以下に、本発明による複合セラミック材料を用いた連断
器用ノズルを示す第一図に基づいて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Below, a description will be given based on FIG. 1 showing a nozzle for a disconnector using a composite ceramic material according to the present invention.

セラミック基材3表面のアークによる生成物が付着し易
い部分を表面処理して表面付着性(濡れ性)を減少させ
た表面層がダである。この表面処理は以下のような方法
により行われる。
A surface layer is a surface layer in which the surface of the ceramic substrate 3 is treated to reduce surface adhesion (wettability) to a portion where products caused by arcing tend to adhere. This surface treatment is performed by the following method.

(1)  弗素系樹脂やポリエチレン等の表面付着性(
濡れ性)の少ない有機−を基材セラミック上表面にコー
ティングする。
(1) Surface adhesion of fluorine resins, polyethylene, etc.
An organic material with low wettability is coated on the top surface of the base ceramic.

例えば、弗素系樹脂であるテフロンの場合、コーティン
グ用市販品(例:三井クロロケミカル(株))の水溶性
懸濁溶液をセラミック基材表面に数回刷毛塗りし、風乾
を繰り返し人後、約30θ℃にて1時間乾燥することに
より一様なテフロンコーティング層を形成する。
For example, in the case of Teflon, which is a fluorine-based resin, a water-soluble suspension solution of a commercially available coating product (e.g., Mitsui Chlorochemical Co., Ltd.) is applied with a brush to the surface of the ceramic substrate several times, and air-dried repeatedly. A uniform Teflon coating layer is formed by drying at 30θ°C for 1 hour.

(2) セラミック基材表面に界面活性剤をコーティン
グする。用いる界面活性剤は陰イオン界面活[IJ(フ
ルキルベンゼンスルホン酸ナトリウム等)、天然界面活
性剤、(ゼラチン等)等である。セラミック基材表面へ
のコーティングは、上記の界面活性 ′剤を含む溶液を
スプレー、浸漬、刷毛塗bi乾燥させて行う。
(2) Coating the surface of the ceramic substrate with a surfactant. The surfactant used is an anionic surfactant [IJ (sodium flukylbenzenesulfonate, etc.), natural surfactant, (gelatin, etc.), etc. Coating on the surface of the ceramic substrate is carried out by spraying, dipping, brushing, and drying a solution containing the above-mentioned surfactant.

(3)  セラミック基材内面をあらかじめ適当なアー
ク@篇雰囲気下で改質処理して基材の材質を表面付着性
の低い変態に改質する。
(3) The inner surface of the ceramic base material is modified in advance in an appropriate arc atmosphere to modify the material of the base material to a transformed state with low surface adhesion.

例えばセラミック材料が9コチ以上のアルミナ(α−ア
ルミナ)を含むときそのa−アルミナをヱーアルミナに
改質する。アーク曝露雰囲気は通常N、ガス、ヘリウム
ガス、SF6ガス等の非酸化性のガス雰囲気中で行う。
For example, when the ceramic material contains 9 or more alumina (α-alumina), the a-alumina is modified to e-alumina. The arc exposure atmosphere is usually a non-oxidizing gas atmosphere such as N, gas, helium gas, SF6 gas, etc.

(4)  セラミック基材表面に表面付着性の小さい別
穐のセラミックをコーティングする。
(4) Coat the surface of the ceramic substrate with a different type of ceramic that has low surface adhesion.

コーティングするセラミックの種類は、弗化物(0ar
2. CaF2. MgF、 、 AjF、等)、酸化
物(MgO、ZrO,、8nO,、No、等)、窒化物
(BN。
The type of ceramic to be coated is fluoride (0ar
2. CaF2. MgF, , AjF, etc.), oxides (MgO, ZrO, , 8nO,, No, etc.), nitrides (BN, etc.).

Si、N4. A4N 、 ZrN 、 TaN 、 
Tin等)、炭化物(SiC!、 B4C,ZrO,W
e、 Nb(!、 Tie、 Tag。
Si, N4. A4N, ZrN, TaN,
Tin, etc.), carbides (SiC!, B4C, ZrO, W
e, Nb(!, Tie, Tag.

Mo、C、Tie −TiN固溶体等)、ホウ化物(Z
rB2゜TiB2. AJ[,2,5iB4. Eli
B4等)、リン化物(BISP2等)からなる各化合物
群中から選択され例えばBy (窒化ホウ素)をアルミ
ナ基材表面にコーティングするには、BNを無機結合剤
と共に酸性水溶液中に混合した溶液を、スプレー、浸漬
、または刷毛塗りのいずれかの適当な方法によって基材
表面に塗布し、室温乾燥後コOO〜100℃で73分間
焼きつけし、さらに非酸化雰囲気中で/100”CK加
熱してBNコーティング層を形成する。
Mo, C, Tie-TiN solid solution, etc.), borides (Z
rB2°TiB2. AJ[,2,5iB4. Eli
B4, etc.), phosphides (BISP2, etc.), for example, to coat the surface of an alumina substrate with By (boron nitride), a solution of BN mixed with an inorganic binder in an acidic aqueous solution is used. It is applied to the surface of the substrate by any suitable method such as spraying, dipping, or brushing, and after drying at room temperature, it is baked for 73 minutes at ~100°C, and then heated to /100°C in a non-oxidizing atmosphere. Form a BN coating layer.

他の例で、アルミプセラミック(通常の9コチアルミナ
、融点15θO〜/400℃)に弗化カルシウムC!a
F、 (融点/JAO℃、沸点コzoo℃)をコーティ
ングするKd、重量比で5〜10−のPVA(ポリビニ
ルアルコール)水溶液に混合したCaF、をセラミック
基材表面に厚さ/ mm程度で刷毛塗りし、風乾後SO
θ〜100℃にて約4時間乾燥した後、昇温速度too
”c/時間程度で徐々に加熱し所定温度/100℃で1
時間保持する。次いでioo℃/時間で室温まで徐冷し
てコーティング層を形成する。以上の操作はM素ガス雰
囲気中で行い、生成コーティング層は0. J n>m
程度の厚さで表面に少々のクラックが入っても使用上問
題はない。
Another example is calcium fluoride C! a
F, coating Kd (melting point/JAO℃, boiling point: zoo℃), CaF mixed in a PVA (polyvinyl alcohol) aqueous solution with a weight ratio of 5 to 10, is brushed onto the surface of the ceramic substrate to a thickness of about mm. After painting and air drying, SO
After drying at θ~100°C for about 4 hours, the temperature increase rate is too
1. Heat gradually at about 100℃/hour to a specified temperature/100℃.
Hold time. Then, the mixture is gradually cooled to room temperature at a rate of 100° C./hour to form a coating layer. The above operations were performed in an M gas atmosphere, and the resulting coating layer was 0. J n>m
Even if there are some cracks on the surface due to the thickness, there is no problem in use.

(5)  前記したコーテイ・ングに用いるセラミック
を基材セラミック表面へ混入し新たな表面層を形成する
(5) The ceramic used for coating as described above is mixed into the surface of the base ceramic to form a new surface layer.

例えばアルミナセラミック基材に(!aF2を混入する
には、成形前の粉末アルミナにCaF、粉末をよく混合
しN、雰囲気中で昇温速度lθO℃/時間程度で徐々に
加熱し、所定温度I10θ℃で1時間加熱保持し焼成す
る。次いでioo℃/時間で室温まで徐冷してCaF2
が混入した基材を得る。この混入はセラミック基材表面
だけでなく基材表面全体に行ってもよい。
For example, to mix (!aF2) into an alumina ceramic base material, the powdered alumina before molding is thoroughly mixed with CaF and powder, heated gradually in a N atmosphere at a heating rate of about lθO℃/hour, and then heated to a predetermined temperature I10θ ℃ for 1 hour and calcined. Then, slowly cooled to room temperature at ioo℃/hour to release CaF2.
A base material mixed with is obtained. This mixing may be carried out not only on the surface of the ceramic substrate but also on the entire surface of the substrate.

(6)  セラミック基材表面を放射!fi;Jまたは
電磁波照射等の物理化学的方法により表面処理する。
(6) Radiate the surface of the ceramic base material! The surface is treated by a physicochemical method such as fi;J or electromagnetic wave irradiation.

例えばアルミナ製部品を真空中に保持し、これに/θθ
万ev(エレクトロンボルト)の電子線を1分間以上照
射する。
For example, if an alumina part is held in a vacuum and the /θθ
Irradiate with an electron beam of 10,000 ev (electron volts) for more than 1 minute.

以上のような表面処理によりセラミック材料の表面付着
性(濡れ性)を減少させ安定した表面特性を得ることを
可能とする。
The surface treatment described above reduces the surface adhesion (wettability) of the ceramic material and makes it possible to obtain stable surface characteristics.

本発明による複合セラミック材料はガス迩断器のアーク
発生部におけるフロー・ガイド用ノズルとして優れ、さ
らに絶縁碍子、真空スイッチの外装、ナトリウムランプ
の発光管、マグネトロンの窓、ICパッケージ、半導体
の外装などにも使用できる。
The composite ceramic material of the present invention is excellent as a flow guide nozzle in the arc generating part of a gas circuit breaker, and is also used as an insulator, the exterior of a vacuum switch, the arc tube of a sodium lamp, the window of a magnetron, an IC package, and the exterior of a semiconductor. It can also be used for

次に実施例により本発明をさらに具体的に説明する。Next, the present invention will be explained in more detail with reference to Examples.

実施例 アルミナ製試料について、表面の改質を行っていない試
料ム(9コチアルミナ)及びBIJ (窒化ホウ素)を
前記C!aF、と同様な混入方法によりアルミナ試料に
混入させた試料Bそれぞれの試料表面に約コKA  (
キロアンペア)のアークを曝露し、アーク消滅直後の両
試料の一点間(距離J mm )の耐電圧値を測定した
。第3図及び第参図はそれぞれ試料ム及び試料Bの印加
電圧の経時変化を示している。第3図中、試料ムのグラ
フではアーク曝露後(グラフ中a点)、耐電圧値を測定
するための両電極間に電極金属等が多く付着しているた
め、はとんど導通状態とな夛電極間の耐電圧値は零とな
っている。
Example Regarding the alumina samples, the sample (9-sided alumina) whose surface was not modified and BIJ (boron nitride) were subjected to the above C! Approximately KA (
An arc of kiloamperes) was exposed, and the withstand voltage value between one point (distance J mm) of both samples was measured immediately after the arc extinguished. 3 and 3 show changes over time in the applied voltages of sample M and sample B, respectively. In Figure 3, the graph for the sample shows that after arc exposure (point a in the graph), there is a lot of electrode metal etc. attached between the two electrodes used to measure the withstand voltage value, so it is mostly in a conductive state. The withstand voltage value between the multiple electrodes is zero.

これに対し第ダ図の試料Bのグラフではアーク曝露直後
のb点が示すようにアルミナ試料表面を改質して表面付
着性を減少させたため、両電極間に付着物が少く約10
0ボルトの大きさの電極間耐電圧値が得られたことを示
している。
On the other hand, as shown in the graph of sample B in Figure D, the surface of the alumina sample was modified to reduce surface adhesion, as shown by point b immediately after arc exposure.
This shows that an interelectrode withstand voltage value of 0 volts was obtained.

このように本発明は基材セラミック表面を表面処理して
表面付着性(濡れ性)を減少させることによって、アー
クによる生成物等の付着を防ぐと共に所定の表面特性を
維持し、耐消耗性、機械強度、固さ等を生かした設計が
可能となる新しいセラミック材料を提供するものである
In this way, the present invention treats the base ceramic surface to reduce surface adhesion (wettability), thereby preventing the adhesion of products etc. due to arcing, maintaining predetermined surface characteristics, and improving wear resistance and The aim is to provide a new ceramic material that can be designed to take advantage of mechanical strength, hardness, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a及びbはそれぞれ従来のセラミック材料を用い
た連断器用ノズルを示す部分縦断面図及び側面図、第一
図a及びbはそれぞれ本発明による複合セラミック材料
を用いた遮断器用ノズルを示す部分縦断面図及び側面図
、第3図はアルミナセラミック試料の電圧の経時変化を
示す図、第ダ図はBNを混入したアルミナセラミック試
料の電圧の経時変化を示す図である1図中、 l・・単一のセラミックまたはテフロン基材、−・・8
P  ガス等を充填した空間、3・・セラミツク基材、
゛り・・表面処理した表面層。 代 理 人  葛  野  信  − 1l1F l:l:!(4jf)      幹田(I
S−>f)手続補正書(自発) 1.¥許庁長宮殿 1.11件の表示    特願昭 Iツー〇l1lO1
1号2、発明の名称    複合セツ々ツク材料:3 
補正をする者 事件との関係   特許出願人 住 所     東京都千代田区丸の内二丁目2番3号
名 称(601)   三菱電機株式会社代表者片山仁
八部 4、代理人 住 所     東京都千代田区丸の内二丁目2番3号
三菱電機株式会社内 氏 名(6699)   弁理士 葛  野  信  
−(連し%先03(213)3(2145J′r部)(
1) 本補正の対象 +11明細書の発明の詳細な説明の欄 4補正の内容
Figures 1a and b are partial vertical cross-sectional views and side views respectively showing a conventional nozzle for a connecting circuit breaker using a ceramic material, and Figures 1a and b are respectively a nozzle for a circuit breaker using a composite ceramic material according to the present invention. Figure 3 is a diagram showing the change in voltage over time of an alumina ceramic sample, and Figure D is a diagram showing a change in voltage over time of an alumina ceramic sample mixed with BN.In Figure 1, l...Single ceramic or Teflon base material, -...8
P: Space filled with gas, etc., 3: Ceramic base material,
゛ri... Surface treated surface layer. Agent Shin Kuzuno - 1l1F l:l:! (4jf) Mikida (I
S->f) Procedural amendment (voluntary) 1. ¥Hsu Commissioner's Palace 1. Showing 11 results Tokugansho I2〇l1lO1
No. 1 2. Name of the invention Composite set material: 3
Relationship with the person making the amendment Patent applicant address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Hitoshi Katayama 4, Agent address Marunouchi, Chiyoda-ku, Tokyo 2-2-3 Mitsubishi Electric Corporation Name (6699) Patent attorney Shin Kuzuno
-(Continuous % destination 03 (213) 3 (2145J'r section) (
1) Subject of this amendment + 11 Contents of amendment in column 4 of detailed description of the invention in the specification

Claims (1)

【特許請求の範囲】 (1)  セラミック材料の基材セラミック表面を表面
処理してなる複合セラミック材料。 偉) 表面処理が有機物をコーティングして行う特許請
求の範囲第1項記載の複合セラミック材料。 (3)  表面処理が基材セラミック表面に界面活性剤
をコーティングして行う特許請求の範囲第1項記載の複
合セラミック材料。 (41表面処理が基材セラミック表面をあらかじめ適当
なアーク曝露雰囲気下で改質処理して行う特許請求の範
囲第1項記載の複合セラミック材料。 俤) 表面処理が基材セラミック表面に別種のセラミッ
クをコーティングまたは混入して行う特許請求の範囲第
1項記載の複合セラミック材料。 (6)  表面処理が所定の物理化学的方法によりなさ
れる特許請求の範囲第1項記載の複合セラミック材料。 (7)  セラミック材料がアルミナをt−一以上含ん
でなる特許請求の範囲第1項記載の複合セラミック材料
。 (8)  セラミック材料がガス遮断器のアーク発′生
部においてフロー・ガイド用ノズルとして使用される特
許請求の範囲第1項記載の複合セラミック材料。 (9) 有機物が弗素系樹脂、ポリエチレン等か(なる
特許請求の範囲第2項記載の複合セラミック材料。 al  別種のセラミックがCar、 、 OuF、 
、 MgF、。 A4F、  等の弗化物またFiMgO+ Zr0z 
e SnOSn02e等の酸化物またはBN 、 Si
、N4. AIN 、 ZrN。 TaN 、 TiN等の窒化物またはSiO、B、C、
ZrO。 VC,NbC、TiC、TaC、Mo2G 、 TiC
−Tin固溶体等の炭化物またはZrBt + TiB
z tムjB、、 、 EliB、 。 131B4等のホウ化物または”l5P2”のリン化物
からなる特許請求の範囲第3項記載の複合セラミック劇
料。 a珍 物理化学的方法が放射111i!または電磁波照
射である特許請求の範囲第6項記載の複合セラミック材
料。
[Claims] (1) A composite ceramic material obtained by surface-treating the base ceramic surface of a ceramic material. The composite ceramic material according to claim 1, wherein the surface treatment is performed by coating with an organic substance. (3) The composite ceramic material according to claim 1, wherein the surface treatment is performed by coating the surface of the base ceramic with a surfactant. (41) The composite ceramic material according to claim 1, wherein the surface treatment is performed by modifying the base ceramic surface in advance in an appropriate arc exposure atmosphere. The composite ceramic material according to claim 1, which is coated with or mixed with. (6) The composite ceramic material according to claim 1, wherein the surface treatment is performed by a predetermined physicochemical method. (7) The composite ceramic material according to claim 1, wherein the ceramic material contains t-1 or more alumina. (8) The composite ceramic material according to claim 1, wherein the ceramic material is used as a flow guide nozzle in an arc generating part of a gas circuit breaker. (9) Composite ceramic material according to claim 2, in which the organic substance is a fluorine-based resin, polyethylene, etc.
, MgF,. Fluorides such as A4F, and FiMgO+ Zr0z
e Oxide such as SnOSn02e or BN, Si
, N4. AIN, ZrN. Nitride such as TaN, TiN or SiO, B, C,
ZrO. VC, NbC, TiC, TaC, Mo2G, TiC
- Carbide such as Tin solid solution or ZrBt + TiB
ztmujB, , EliB, . The composite ceramic material according to claim 3, comprising a boride such as 131B4 or a phosphide of "15P2". A rare physical and chemical method is radiation 111i! or the composite ceramic material according to claim 6, which is irradiated with electromagnetic waves.
JP4402282A 1982-03-18 1982-03-18 Composite ceramic material Granted JPS58161980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4402282A JPS58161980A (en) 1982-03-18 1982-03-18 Composite ceramic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4402282A JPS58161980A (en) 1982-03-18 1982-03-18 Composite ceramic material

Publications (2)

Publication Number Publication Date
JPS58161980A true JPS58161980A (en) 1983-09-26
JPS6236995B2 JPS6236995B2 (en) 1987-08-10

Family

ID=12680033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4402282A Granted JPS58161980A (en) 1982-03-18 1982-03-18 Composite ceramic material

Country Status (1)

Country Link
JP (1) JPS58161980A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0511271U (en) * 1991-07-23 1993-02-12 日新電機株式会社 Insulation nozzle for gas circuit breaker
JP2006001787A (en) * 2004-06-17 2006-01-05 Hitachi Chem Co Ltd Crucible for growing calcium fluoride crystal, method for producing calcium fluoride crystal, and calcium fluoride crystal
JP2007103269A (en) * 2005-10-07 2007-04-19 Fuji Electric Holdings Co Ltd Circuit breaker
CN100439286C (en) * 2006-08-29 2008-12-03 中材高新材料股份有限公司 Method for preparing super high temperature complex phase ceramic ZrB2-ZrC-SiC near to zero ablation
JP2010232031A (en) * 2009-03-27 2010-10-14 Japan Ae Power Systems Corp Buffer type gas circuit breaker
JP2015081202A (en) * 2013-10-21 2015-04-27 富士電機株式会社 Method for forming resin film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49310A (en) * 1972-04-14 1974-01-05
JPS525329A (en) * 1975-06-25 1977-01-17 Schlafhorst Co Maschf Magazine for bobbin tube
JPS5243729A (en) * 1975-10-03 1977-04-06 Hitachi Ltd Cooling method and apparatus for casts in continuous casting apparatus
JPS56145178A (en) * 1980-04-04 1981-11-11 Hiyoumen Kakou Kenkyusho Kk Tile treatment for reducing water absorbability
JPS56145179A (en) * 1980-04-04 1981-11-11 Hiyoumen Kakou Kenkyusho Kk Tile back side sealing treatment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49310A (en) * 1972-04-14 1974-01-05
JPS525329A (en) * 1975-06-25 1977-01-17 Schlafhorst Co Maschf Magazine for bobbin tube
JPS5243729A (en) * 1975-10-03 1977-04-06 Hitachi Ltd Cooling method and apparatus for casts in continuous casting apparatus
JPS56145178A (en) * 1980-04-04 1981-11-11 Hiyoumen Kakou Kenkyusho Kk Tile treatment for reducing water absorbability
JPS56145179A (en) * 1980-04-04 1981-11-11 Hiyoumen Kakou Kenkyusho Kk Tile back side sealing treatment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0511271U (en) * 1991-07-23 1993-02-12 日新電機株式会社 Insulation nozzle for gas circuit breaker
JP2006001787A (en) * 2004-06-17 2006-01-05 Hitachi Chem Co Ltd Crucible for growing calcium fluoride crystal, method for producing calcium fluoride crystal, and calcium fluoride crystal
JP2007103269A (en) * 2005-10-07 2007-04-19 Fuji Electric Holdings Co Ltd Circuit breaker
CN100439286C (en) * 2006-08-29 2008-12-03 中材高新材料股份有限公司 Method for preparing super high temperature complex phase ceramic ZrB2-ZrC-SiC near to zero ablation
JP2010232031A (en) * 2009-03-27 2010-10-14 Japan Ae Power Systems Corp Buffer type gas circuit breaker
JP2015081202A (en) * 2013-10-21 2015-04-27 富士電機株式会社 Method for forming resin film

Also Published As

Publication number Publication date
JPS6236995B2 (en) 1987-08-10

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