JPS58161321A - Projection type exposure device - Google Patents

Projection type exposure device

Info

Publication number
JPS58161321A
JPS58161321A JP57042647A JP4264782A JPS58161321A JP S58161321 A JPS58161321 A JP S58161321A JP 57042647 A JP57042647 A JP 57042647A JP 4264782 A JP4264782 A JP 4264782A JP S58161321 A JPS58161321 A JP S58161321A
Authority
JP
Japan
Prior art keywords
stage
reticle
pattern
revolution
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57042647A
Other languages
Japanese (ja)
Inventor
Masayuki Sengoku
仙石 正行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57042647A priority Critical patent/JPS58161321A/en
Publication of JPS58161321A publication Critical patent/JPS58161321A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Abstract

PURPOSE:To correct a reference position in case of revolution at theta deg. of a reticle automatically by detecting a reference mark on an X-Y stage, obtaining the quantity of revolution of the reticle through calculation from the waveform of the pattern and moving the quantity of revolution to a position reaching 0. CONSTITUTION:Beams from an illuminating light source 1 are condensed by a condenser lens 2, passed through the reticle 3 positioned by photoelectric microscopes 7A, 8B, reduced by a projection lens 4 and imaged onto a wafer 5. The wafer 5 is positioned onto a stage 6. The reference marks A, B are printed on the stage 6. A pattern detector 7 detects the reference marks through the projection lens. The X-Y stage is moved in parallel in the X or Y direction, and the reference mark B is pattern-detected and memorized similarly. An error DELTAtheta in case of the revolution of the reticle is calculated by two relative positional errors and the quantity of the X-Y stage moved. The reference positions of the photoelectric microscopes 7 are moved only by DELTAtheta.

Description

【発明の詳細な説明】 本発明は、投影型の露光装置に係り、特にX−Yステー
ジの移動に対する、レチクルの回転を自動的に補正する
ことのできる露光装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a projection type exposure apparatus, and more particularly to an exposure apparatus that can automatically correct rotation of a reticle with respect to movement of an XY stage.

従来の投影型の露光装置は、第1図に示すように、照明
光線lからの光を、コンデンサレンズ2で集光し、レテ
ィクル原画面3及び投影レンズ4を透過せしめたのち、
ウエノX5にレティクルパターンを結像するようになっ
ている。ここで、ウェハ5はX−Yステージ6を移動さ
せることにより、このウェハ5−Fに同一パターンをス
テップアンドIJ ヒ−1−にて露光できるようになっ
ている。
As shown in FIG. 1, a conventional projection type exposure apparatus condenses light from an illumination beam l with a condenser lens 2, transmits it through a reticle original screen 3 and a projection lens 4, and then
The reticle pattern is imaged onto the Ueno X5. Here, by moving the X-Y stage 6, the wafer 5 can be exposed with the same pattern on the wafer 5-F by step-and-IJ-1-.

また、レティクル原画図3は、ウェハへの無光前に、2
個の光電検出器7及び8により、X−Y及びθの位置決
めがなされるが、θの基準位置は前もって、特定ピッチ
で無光したウェハの配列により、回転量を算出し、基準
位置の補正を行なっている。
In addition, the reticle original drawing 3 shows the 2
X-Y and θ positioning is performed by the photoelectric detectors 7 and 8, but the θ reference position is determined in advance by calculating the amount of rotation by arranging the wafers with no light at a specific pitch, and correcting the reference position. is being carried out.

しかし、この基準位置の補正において基準位置が正確で
なかったり、光電検出器7,8のドリフトやゲイン変化
のため、基準位置が変動した場合には、チップ毎に回転
誤差の生じる慣れがあった。
However, when correcting this reference position, if the reference position is not accurate, or if the reference position fluctuates due to drift or gain changes of the photoelectric detectors 7 and 8, rotation errors occur for each chip. .

本発明の目的は、レティクルのθ回転の基準位置を自動
的に補正することのできる露光装置を提供することにあ
る。
An object of the present invention is to provide an exposure apparatus that can automatically correct a reference position for θ rotation of a reticle.

このよう表目的を達成するために本発明は、X−Yステ
ージ上に2個の基準マークを設け、レティクルのアライ
ニング後、X−Yステージを移動し、スルーザレンズ方
式によシ、基準マークラ検出し、その検出されたパター
ン波形より、X−Yステージの移動に対するレティクル
の回転量を計算で求め、回転量がOになる位置へ、θの
基準を移動し、再アライニングを実行するようにしたも
のである。
In order to achieve this objective, the present invention provides two reference marks on the X-Y stage, moves the X-Y stage after aligning the reticle, and uses a through-the-lens method to set the reference marks. Detects the mark, calculates the amount of rotation of the reticle relative to the movement of the X-Y stage from the detected pattern waveform, moves the θ reference to the position where the amount of rotation is O, and executes realignment. This is how it was done.

以下実施例を用いて本発明の詳細な説明する。The present invention will be described in detail below using Examples.

第2図は本発明による投影型露光装置の一実施例を示す
構成図である。照明光源1からの光はコンデンサレンズ
2で集光され、光電顕微鏡7A。
FIG. 2 is a block diagram showing an embodiment of a projection type exposure apparatus according to the present invention. Light from the illumination light source 1 is condensed by a condenser lens 2 to a photoelectron microscope 7A.

7Bによって位置決めされるレチクル3を通し、さらに
投影レンズ4により縮小されてウェハ5に結像されるよ
うになっている。ウェハ5はステージ6上に位置づけら
れ、このステージ6には基準マークのおよび■(または
■′ )が記されている。
The image passes through the reticle 3 positioned by 7B, is further reduced in size by the projection lens 4, and is imaged onto the wafer 5. The wafer 5 is positioned on a stage 6, on which reference marks and (or ■') are marked.

なお、パターン検出器7があり、このパターン検出器7
は投影レンズをとおして前記基準マークを検出できるよ
うになっている。
Note that there is a pattern detector 7, and this pattern detector 7
The reference mark can be detected through a projection lens.

このような構成において、レティクルのアライニング後
、第4図に示すようにステージ上の基準マーク■を投影
レンズ下に移動し、パターン検出器7でパターン検出し
、レティクルとの相対位置をCPUに記憶する。
In such a configuration, after aligning the reticle, the reference mark ■ on the stage is moved below the projection lens as shown in FIG. 4, the pattern is detected by the pattern detector 7, and the relative position with respect to the reticle is sent to the CPU. Remember.

次に、X−YステージをX又はY方向に平行移動し、ス
テージ上のもう1つの基準マーク■又は■′を同様にパ
ターン検出し、レティクルとの相対位置を記憶する。こ
こで基準マークのと■又は■′は前もって、ステージ移
動に対し平行になるように調整されているものである。
Next, the X-Y stage is moved in parallel in the X or Y direction, the pattern of another reference mark (2) or (2') on the stage is similarly detected, and the relative position with respect to the reticle is memorized. Here, the reference marks and ■ or ■' are adjusted in advance so that they are parallel to the movement of the stage.

この2つの相対位置誤差と、X−Yステージの移動量に
より、ステージに対するレティクルの回転誤差Δθを計
算で求める。次に光電顕微鏡5の基準位置をスリットモ
ータによりΔθ分だけ移動し、移動後にレティクルのア
ラメントを実行する。
Using these two relative position errors and the amount of movement of the XY stage, the rotation error Δθ of the reticle with respect to the stage is calculated. Next, the reference position of the photoelectric microscope 5 is moved by Δθ by the slit motor, and after the movement, alignment of the reticle is executed.

これにより、第3図に示すΔθが自動的に補正され、X
−Yステージの動きに対し、回転誤差のないレティクル
の位置決めが実行される。
As a result, Δθ shown in FIG. 3 is automatically corrected, and
- Positioning of the reticle without rotational errors is performed with respect to the movement of the Y stage.

本発明によれば、光電顕微鏡の電気的ドリフトや照明ラ
ンプの輝度変化によるゲイン変動により、基準位置が変
化したとしても、ウエノ・を露光して、配列の確認をし
なくとも、自動的に回転眼差量を検出し補正できるので
、装置のセルフチェックが可能となる効果を有する。
According to the present invention, even if the reference position changes due to gain fluctuations due to electrical drift of the photoelectron microscope or changes in the brightness of the illumination lamp, the wafer can be automatically rotated without having to expose it to light and check its alignment. Since the amount of eye difference can be detected and corrected, it has the effect of enabling self-check of the device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の投影型露光装置の一例を示す構成図、第
2図は本発明による投影型露光装置の一実施例を示す構
成図、第3図は光電顕微鏡の基準位置ずれにより、回転
誤差を生じたレティクルアライメント位置を示すレティ
クルの平面図、第4図は回転誤差を検出するために、ス
テージ上に設けられた基準マーク位置と、マーク検出の
ためのステージの移動を示すステージ平面図である。
Fig. 1 is a block diagram showing an example of a conventional projection exposure apparatus, Fig. 2 is a block diagram showing an embodiment of a projection exposure apparatus according to the present invention, and Fig. 3 is a block diagram showing an example of a projection exposure apparatus according to the present invention. FIG. 4 is a plan view of the reticle showing the reticle alignment position where the error occurred; FIG. It is.

Claims (1)

【特許請求の範囲】[Claims] 1、露光照明系と、レチクル原画面を微小移動する微動
機構と、レチクル原画面をウェハ上に投影する投影レン
ズと、ウェハをステップアンドリピート法で移動するX
−Yステージと、投影レンズを透して、パターン検出す
るパターン検出系よりなる投影型露光装置において、X
−Yステージ上に2個の基準マークを設け、X−Yステ
ージを移動して、各々の基準マークを投影レンズを通し
てパターン検出することにより、レチクルの回転の原点
位置を、X−Yステージの移動に対し、回転が0になる
ように自動補正させることを特徴とする投影型露光装置
1. An exposure illumination system, a fine movement mechanism that moves the reticle original screen, a projection lens that projects the reticle original screen onto the wafer, and an X that moves the wafer using a step-and-repeat method.
- In a projection exposure apparatus consisting of a Y stage and a pattern detection system that detects a pattern through a projection lens,
- By setting two reference marks on the Y stage, moving the X-Y stage, and detecting the pattern of each reference mark through the projection lens, the origin position of the rotation of the reticle can be determined by moving the X-Y stage. A projection type exposure apparatus is characterized in that the rotation is automatically corrected so that the rotation becomes 0.
JP57042647A 1982-03-19 1982-03-19 Projection type exposure device Pending JPS58161321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042647A JPS58161321A (en) 1982-03-19 1982-03-19 Projection type exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042647A JPS58161321A (en) 1982-03-19 1982-03-19 Projection type exposure device

Publications (1)

Publication Number Publication Date
JPS58161321A true JPS58161321A (en) 1983-09-24

Family

ID=12641798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042647A Pending JPS58161321A (en) 1982-03-19 1982-03-19 Projection type exposure device

Country Status (1)

Country Link
JP (1) JPS58161321A (en)

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