JPS58154785A - Blue light emitting fluorescent material - Google Patents

Blue light emitting fluorescent material

Info

Publication number
JPS58154785A
JPS58154785A JP3854782A JP3854782A JPS58154785A JP S58154785 A JPS58154785 A JP S58154785A JP 3854782 A JP3854782 A JP 3854782A JP 3854782 A JP3854782 A JP 3854782A JP S58154785 A JPS58154785 A JP S58154785A
Authority
JP
Japan
Prior art keywords
fluorescent material
phosphor
light emitting
blue light
emitting fluorescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3854782A
Other languages
Japanese (ja)
Other versions
JPS608269B2 (en
Inventor
Akihiko Ishitani
石谷 明彦
Kaneo Uehara
上原 兼雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3854782A priority Critical patent/JPS608269B2/en
Publication of JPS58154785A publication Critical patent/JPS58154785A/en
Publication of JPS608269B2 publication Critical patent/JPS608269B2/en
Expired legal-status Critical Current

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  • Luminescent Compositions (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

PURPOSE:To form at a low cost a blue light emitting fluorescent material for low-speed electron beam excitation excellent in luminance, by mixing a fluorescent material obtd. by doping ZnS with a given proportion of Ag and Al, with a metal oxide. CONSTITUTION:High-purity ZnS is immersed in an aq. soln. of given concn. of Al2(SO4)3.18H2O and of AgNO3 and, after dried at about 100 deg.C, the obtd. powder is thermally treated in a H2S atmosphere at about 600-800 deg.C for about 2-24hr to form a blue light emitting fluorescent material having Ag concn. of 0.05-1.12m/o based on Zn and an Al/Ag concn. ratio of 1:2-1:3. Then the fluorescent material is mixed with a metal oxide such as an electrically conductive InO3 powder.

Description

【発明の詳細な説明】 本発明は青色の発光を値する低速電子線励起用螢光体K
llするもの′Cある。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a phosphor K for excitation with slow electron beams that emits blue light.
There is something to do.

ディスプレイデバイスの分野では、フラットノ(ネルデ
ィスプレイの時代に備えて、液晶(LCD)、発光ダイ
オード(IJD)、プラズマディスプレイ(PDP)、
ELパネル、偏平CRT、螢光表示管などの各種平面画
會表示デバイスの研究鮨尭が進められている。IP#に
電子1lIllI起による偏平CRT。
In the field of display devices, in preparation for the era of flat panel displays, we are developing liquid crystals (LCDs), light emitting diodes (IJDs), plasma displays (PDPs),
Research is being carried out on various flat screen display devices such as EL panels, flat CRTs, and fluorescent display tubes. Flat CRT with electron 1lIllI originating from IP#.

螢光表示管は輝度が高いという特徴を有しておジ、これ
の実用化が期待されている。
Fluorescent display tubes are characterized by high brightness and are expected to be put into practical use.

これらのデバイスに用いられ、る低速電子線励起用の螢
光体のうちで青色駒間螢光体の輝度は伽の色に較べて輝
度が低く、カラー化owavaKなりてlた。q#に自
動車用の螢光表示管に性青色社絶対必要であ夛、高輝g
O青色発光螢光体all俺が冒まれている。
Among the phosphors for low-speed electron beam excitation used in these devices, the brightness of the blue Komama phosphor is lower than that of the color of the blue color, resulting in colorization. High brightness G is absolutely necessary for fluorescent display tubes for automobiles.
O Blue-emitting phosphor all of us are affected.

現在、青色尭党螢光体としてはZs8 : At螢光体
が用いられている。ZII8:At #i高遭電子繍―
鴫では高痺直の青色螢光体として知られ、カラーテレビ
等に使用されているが、螢光表示管のような数十vの低
速電子纏励11iI″t″線発光しない、CRTOよう
な数十KVの高遭電子纏でm11する場合は、2次電子
によって帯電が緩和されると同時に、帯電に抗して螢光
体粒子内部まて電子が侵入で龜るのに対し、低遍電子纏
励起で祉電子が螢光体0浅向な叩くだけでTo9 、2
118:Atのように絶縁物であると、帯電によって励
起で$1くなるOである。
Currently, Zs8:At phosphor is used as a blue phosphor. ZII8: At #i high encounter electronic embroidery-
It is known as a blue phosphor with high brightness, and is used in color televisions, etc., but it does not emit 11iI"t" rays when driven by low-speed electrons at several tens of volts like fluorescent display tubes, and it does not emit 11iI"t" rays like fluorescent display tubes. In the case of m11 with a highly exposed electron coil of several tens of KV, the charging is relaxed by secondary electrons, and at the same time, the electrons penetrate into the interior of the phosphor particles against the charging and accumulate, whereas the low voltage To 9, 2 just by hitting the phosphor 0 shallowly with electron-bound excitation.
118: When it is an insulator like At, O becomes $1 when excited by charging.

この帯電を除去するためKI%10m導電粉な混合して
いる。2%8:AtとIm01との混合螢光体にすもと
、Zs3:Ay螢螢光体面画うち、導電粉とII触して
電子に対して電位の下った(1111Kよ9表厘電荷が
除去された)接触点近傍に電子が入射し、ZI8:AI
が発光する。このようtS合螢光体では、直接l5lO
@ K入射した電子は発光KiJ寄与しない、ましてΔ
を量格子とする低速電子線NIJ起用螢光体は一毅に輝
tSt−のである。この間lIを解決するには、螢光体
を低抵抗にすればよく、Cdを含む(ZsCd) Sを
母格子とする螢光体の場合にはAJvドープするととK
よって解決されている。しかしながら2%Sの場合はA
IvドーグするとZs空格子がで暑て電荷が補償され、
キャリアー鍛度が増さず、低抵抗にはならない。zs9
格子をつくらずKAJをドープする方法として、Zs8
単結晶の場合、真空中で2%蒸気中で熱処理する方法が
とられているが、amec使われる聯末螢光体の場合に
、この方法は非実用的である。
In order to remove this charge, KI% 10m conductive powder is mixed. When the mixed phosphor of 2% 8:At and Im01 was exposed, the surface of the Zs3:Ay phosphor came into contact with the conductive powder and the potential for electrons decreased (1111K, 9 times the charge). (removed)), electrons are incident near the contact point, and ZI8:AI
emits light. In such a tS phosphor, directly l5lO
@ K Incident electrons do not contribute to light emission KiJ, much less Δ
The phosphor using a slow electron beam NIJ with a quantity lattice of tSt- is one that emits tSt-. In order to solve lI during this period, it is sufficient to make the phosphor low in resistance.In the case of a phosphor containing Cd (ZsCd) whose parent lattice is S, doping with AJv increases the resistance of the phosphor.
Therefore it is resolved. However, in the case of 2%S, A
When Iv dog, Zs vacancy is generated and the charge is compensated,
The carrier strength does not increase and the resistance does not become low. zs9
As a method of doping KAJ without creating a lattice, Zs8
In the case of a single crystal, a method of heat treatment in 2% steam in a vacuum is used, but this method is impractical in the case of a monolithic phosphor used in AMECS.

以上のような事情から、本発明看等は通常の作成方法で
zI&s:〜Mを低抵抗化する方法を検討したlII果
、AP、)Iのドープ量をI&も発光効率が高いと8 
tL ”C’vh 6Ap# (L O11mla h
ら大11に、@[消光がおきるgaにずらゼて多量のM
を大作ると共(、ドープIlfを低くしてム空格子点の
発生を抑制することにより、ZJ:AtAj f&重畳
光体の輝度を改善で寝ることを見い出したのである。
Based on the above-mentioned circumstances, the inventors of the present invention investigated a method of reducing the resistance of zI&s:~M using a normal production method.
tL ”C'vh 6Ap# (L O11mla h
In addition, a large amount of M
They discovered that the brightness of the ZJ:AtAj f& superimposed light body could be improved by suppressing the generation of mu vacancies by lowering the doping Ilf.

2鴨8:AIの實色脅党はドナー・アク奄ブタ一対の再
曽合による俺党である。A#aアタセプターでTo5、
ドナー扛、5mllI4から導入8れる〕・ログンイオ
ンが意−的に導入されるAj%Is、Gg等である。
2 Duck 8: AI's true threat party is a party created by the recombination of Donor and Aku Ambuta. To5 with A#a aterceptor,
Donor ion is introduced from 5ml I4] - Logon ion is intentionally introduced Aj% Is, Gg, etc.

これらの不純物イオンの量く一膳ll9II:@1:お
龜;尋直曽のApa O1m m1m、そしてAJtら
は(103%/# テ最も輝度が高いことが明らかに8
れている。このことは、しばしば配位膓標毫デルで説#
48れるように励起状態の波動員数の拡がりが大Iい上
に、ドナー・アク竜ブタ一対の形成が数十AK4わたる
ため罠、ドナー・アクセプタ一対間の相互作用が1dl
lないMl囲の繊界がこれらの値であるとルて鋭@番れ
ている。
The amount of these impurity ions is 9II: @1: Oka; Naoso's Apa O1m m1m, and AJt et al. (103%/#).
It is. This is often explained in the coordination manual.
48, the number of wave mobilizations in the excited state is large, and the formation of a donor-acceptor pair spans several tens of AK4s, so the interaction between a trap and a donor-acceptor pair is 1 dl.
If the fiber boundary around Ml is at these values, it will be very sharp.

しかしながら、既Kj1!べたように混合螢光体におい
ては、ZsS:AtAJo最遍条件は必ずしもあては鷹
もない、それは#I&履消光があうて4を流分記事がそ
れ以上に改m′tLれれは、混合螢光体とじての輝度は
改II8れるOである。本尭@によれTIdAJドープ
會とAJドープ量との差な大きくすることによりてキャ
リアー11)[の増加を促し、比較的低い温駅でドーグ
することによって電荷補償を抑制し。
However, already Kj1! As mentioned above, in the case of mixed fluorophores, the ZsS:AtAJo maximum condition does not necessarily apply, because #I & The brightness as a light body is 0. According to Motoya @, by increasing the difference between the TIdAJ doping and the AJ doping amount, an increase in carrier 11) is promoted, and charge compensation is suppressed by doping at a relatively low temperature station.

混合螢光体の輝Kv向上することができる。The brightness Kv of the mixed phosphor can be improved.

以下に本発明を実施例に従9て説明する。The present invention will be explained below based on Examples.

く実施例〉 919???慢のZsSを所定の濃度で用意したMl(
S 04)s・1s )i、0とAINO,との水溶液
に含浸1eた。このとlAtoa度を2鴨に対しα01
鵠/・〜α15e’e ’tで変えた。またMの員度は
〜に対して1〜5倍まで変えた。含浸させた粉末を10
0℃で乾燥させた徽H,8雰囲気5中で600℃〜80
0℃で2時間から24時間熱処理した。
Examples> 919? ? ? Ml (
S04)s・1s)I was impregnated with an aqueous solution of i,0 and AINO. This and lAtoa degree for 2 ducks α01
鵠/・〜α15e'e 't changed it. Also, the degree of M was varied from 1 to 5 times compared to ~. 10 of the impregnated powder
Hui H dried at 0℃, 600℃~80 in 8 atmosphere 5
Heat treatment was performed at 0° C. for 2 to 24 hours.

得られたZl@S:A#AJ螢光体と1町0.導電粉を
重量比で7二5で1合した。仁のl510−電粉は、r
、o。
The obtained Zl@S:A#AJ fluorophore and 1 town 0. The conductive powder was combined in a weight ratio of 725. Jin's l510-electric powder is r
,o.

原料粉末をHCjK#l解させ、NH,OHを加えて水
酸化インジウム沈澱をS4tた。これを水洗r過し、乾
燥した後空気中で熱分解することくよって得た。
The raw material powder was dissolved in HCjK#1, and NH and OH were added to form an indium hydroxide precipitate. This was washed with water, filtered, dried, and then thermally decomposed in air to obtain a product.

混合螢光体をムを蒸着した基板上に水で塗布し、空気中
で10分、窒素中で10分間それヤれ400℃の熱処理
を行りた後、1I11!1g1K示すようなオイルフリ
ーのデマンタプルな低遍電子纏励起カソードルミネッセ
ンス評価装置に*ツトして評価した。
The mixed phosphor was coated with water on the substrate on which the phosphor was vapor-deposited, and after heat treatment at 400°C for 10 minutes in air and 10 minutes in nitrogen, an oil-free product as shown in 1I11!1g1K was applied. Evaluation was carried out using a demantaple low-uniform electron-entrained excited cathode luminescence evaluation device.

すなわち、真空槽1中に、螢光体Sを設置した基板7を
収容し、カソード2から発射した電子S%:着光体50
IJa光画に111射することによって、 ApAjの
ドープ量と、輝度との関係を欄定するものである。なお
、図中4はグリッド、6itlll[iである。
That is, a substrate 7 on which a phosphor S is installed is housed in a vacuum chamber 1, and electrons S% emitted from a cathode 2: a phosphor 50
The relationship between the doping amount of ApAj and the brightness is determined by irradiating the IJa light image with 111 rays. Note that 4 in the figure is a grid and 6itllll[i.

一定時の真空fはI X 10’″’Tore 、陽極
電圧は50■であった・ 700℃で10時間熱処理した場合についてAI。
The vacuum f at a constant time was I x 10''''Tore, and the anode voltage was 50 ■ AI for the case of heat treatment at 700°C for 10 hours.

Mの濃度と輝度との関係を箒2図に示す・AtとAJと
の比は1:2で一定とした。′aIIl消光が起きる領
域で4AJをドーグすることによりて渦合螢光体の輝度
が改善される仁とが示された。
The relationship between the concentration of M and the brightness is shown in Figure 2. The ratio of At and AJ was kept constant at 1:2. It has been shown that the brightness of the vortex phosphor is improved by adding 4AJ in the region where 'aIIl quenching occurs.

以上に述べたように1本発#4は、粉末螢光体としてコ
ストアップのために適用が―しいとされ、ているZs墓
気処塩に代えて、低コストで輝度が改善されたZ%s 
: hphi螢光体vII供できる効果を有丁るもので
ある。
As mentioned above, single ray #4 is considered to be suitable for use as a powder phosphor due to increased cost, and instead of Zs, which is low cost and has improved brightness. %s
: It has the effect that hphi phosphor vII can provide.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はデマンタプルな低遭電子纏励起カッードルζネ
ッセンスの評II装置の横lFrl1lIWJ図、第2
11Fi%O―度と輝度との関係を示す図である。 特許出願人 日本電気株式会社 矛1記 AC
Figure 1 is a horizontal lFrl1lIWJ diagram of the evaluation II device for demantaple low electron-encoupled excitation cuddle ζ-ness, and Fig. 2
FIG. 11 is a diagram showing the relationship between 11Fi%O-degree and brightness. Patent applicant: NEC Co., Ltd. 1 AC

Claims (1)

【特許請求の範囲】[Claims] (1)2%8 : AtAIと金属酸化物との1合体か
らなシ、ムに対するAt0IIlfを(L OS 〜a
 1211/6.Atに対するAJf)渦層を1:2〜
1;1としたことを特徴とする低速電子線励起用青色発
覚螢光体。
(1) 2% 8: A combination of AtAI and a metal oxide gives At0IIlf for the film (LOS ~a
1211/6. AJf to At) vortex layer 1:2 ~
A blue-emitting phosphor for slow electron beam excitation, characterized in that the ratio is 1:1.
JP3854782A 1982-03-11 1982-03-11 blue light emitting phosphor Expired JPS608269B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3854782A JPS608269B2 (en) 1982-03-11 1982-03-11 blue light emitting phosphor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3854782A JPS608269B2 (en) 1982-03-11 1982-03-11 blue light emitting phosphor

Publications (2)

Publication Number Publication Date
JPS58154785A true JPS58154785A (en) 1983-09-14
JPS608269B2 JPS608269B2 (en) 1985-03-01

Family

ID=12528310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3854782A Expired JPS608269B2 (en) 1982-03-11 1982-03-11 blue light emitting phosphor

Country Status (1)

Country Link
JP (1) JPS608269B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5986225B2 (en) * 2012-12-25 2016-09-06 タツモ株式会社 Dispersion type EL phosphor manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353479U (en) * 1989-09-26 1991-05-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5986225B2 (en) * 2012-12-25 2016-09-06 タツモ株式会社 Dispersion type EL phosphor manufacturing method

Also Published As

Publication number Publication date
JPS608269B2 (en) 1985-03-01

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