JPS58153379A - X-ray image converter - Google Patents
X-ray image converterInfo
- Publication number
- JPS58153379A JPS58153379A JP58024518A JP2451883A JPS58153379A JP S58153379 A JPS58153379 A JP S58153379A JP 58024518 A JP58024518 A JP 58024518A JP 2451883 A JP2451883 A JP 2451883A JP S58153379 A JPS58153379 A JP S58153379A
- Authority
- JP
- Japan
- Prior art keywords
- ray image
- layer
- screen
- image
- cesium iodide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 11
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011232 storage material Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000003384 imaging method Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 241000557876 Centaurea cineraria Species 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Molecular Biology (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Radiography Using Non-Light Waves (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、Ｘ＠により光電子記憶のために励起可能なス
クリーンを備え、これには走査照射手段が設けられてい
て、さらにその照射結果を電気信号に変換する手段およ
びそのようにして得られる像信号列を目視できる像に変
換する装置を備えているＸ線像変換装−に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention comprises a screen excitable for photoelectronic storage by means of X@, which is provided with scanning illumination means and further with means for converting the illumination result into electrical signals and The present invention relates to an X-ray image conversion device including a device for converting the image signal train obtained in this manner into a visible image.
この種の装置は例えば米国特許第３．９７５．６３７号
明細書に記載されている。A device of this type is described, for example, in US Pat. No. 3,975,637.
例えば増強スクリーンとしてフィルムに置かれているも
のなどの発光スクリーンを用いて作成されるＸｌｌ１Ｉ
像は明白な局所ノイズを有し、フイルム写真や放射線写
真に比べてかなり劣った位置解像度を有する。両者は発
光材料層の粒状の構造または網目構造によって生ぜしめ
られる。この欠点を避けるために、上記の米国特許第３
．９７５．６３７号明細書に記載されているようなシス
テムが考え出された。この場合にはＸ１ｓＩＩによりま
ずスクリーンにおいて光電子が記憶される。このために
一般に赤外線を投射可能な燐光性発光材料を含む発光ス
クリーンが使用される。それから像発生のために記憶ス
クリーンが赤外線レーザで読み取られる。Xll1I created using a luminescent screen, such as one placed on the film as an intensifier screen, for example
The images have obvious local noise and considerably poorer positional resolution compared to film or radiographs. Both are caused by the granular or network structure of the luminescent material layer. To avoid this drawback, the above-mentioned U.S. Pat.
．． A system such as that described in US Pat. No. 975.637 was devised. In this case, X1sII first stores photoelectrons on the screen. Luminescent screens containing phosphorescent luminescent materials capable of emitting infrared radiation are generally used for this purpose. The storage screen is then read with an infrared laser for image generation.
この場合に位置解像度およびコントラスト解像度は、同
じ発光材料に関してすなわち同じ有効Ｘ線吸収、粒の大
きさの分布および光学的特性を有する発光材料に関して
、改善される。In this case, the position resolution and the contrast resolution are improved for the same luminescent material, ie for a luminescent material with the same effective X-ray absorption, grain size distribution and optical properties.
すなわち、位置解像度については、レーザから放出され
て放射される光が大面積の受信器によって記録され、位
置はレーザによって、解像度はレーザの幅によって決ま
るために、発光材料層またはその他の構造による発光の
漏れが問題にならなコントラスト解像度については、も
しそうでなければフィルムの場合にそれの銀粉によって
制約される局所ノイズが除去されるからである。That is, for positional resolution, the emitted light emitted by the laser is recorded by a large-area receiver, the position is determined by the laser, and the resolution is determined by the width of the laser, so the emission by the luminescent material layer or other structure is For contrast resolution, leakage is not a problem because local noise, which would otherwise be limited by the film's silver dust, is removed.
本発明の目的は冒頭に述べた如きＸＨ像変換装置におい
て、像を局所ノイズ、コントラスト解像度および位置解
像度を改善することにある＠この目的は、本発明によれ
ば、スクリーンが完全に均質の記憶材料層であることに
よって達成される。The object of the invention is to improve the local noise, contrast resolution and position resolution of the image in an XH image conversion device as mentioned at the beginning. This is achieved by being a layer of material.
均質の記憶材料層の使用によつぞ所望の改善が達成され
る。確かに同質の層、すなわち目のつんだ材料からなる
層における高速の光電子の到達距離は粒状の層における
よりも著しく短い。したがって約２０μｍの幅の゛レー
ザにより走査する場合には１．この到達距離が位置解像
度の決定に関与する。The desired improvement is achieved through the use of a homogeneous layer of storage material. Indeed, the range of high-speed photoelectrons in a homogeneous layer, ie, a layer of dense material, is significantly shorter than in a granular layer. Therefore, when scanning with a laser with a width of about 20 μm, 1. This reach distance is involved in determining the position resolution.
均質の記憶材料層においては、低い実効到達距離が目の
つまった材料の高い実効吸収のおかげで、改善された解
像度を与える。さらに、同じ方向で均質の材料における
実際上避けられるレーザ自身の漏れが影響する。In a homogeneous storage material layer, the low effective reach provides improved resolution due to the high effective absorption of the dense material. Furthermore, the leakage of the laser itself, which is practically avoided in homogeneous materials in the same direction, is affected.
画素当りの発生光量が吸収されるＸ線量数によって制約
されて変動するだけで、しかもＸｇ量の光量への変換の
統計が実用される発光材料の場合にはほとんど問題にな
らず、そしてＸ線量当りの発生光量数は１よりも遥かに
大きいため（こ、位置ノイズおよびコントラスト解像度
が改善される。In the case of luminescent materials, where the amount of light generated per pixel is limited only by the number of X-rays absorbed and the statistics of converting the amount of Xg to the amount of light are practically used, this is hardly a problem, and the amount of X-rays Since the number of generated lights per unit is much larger than 1 (this improves position noise and contrast resolution).
したがって、完全に均質の記憶材料層は、さもなければ
次の（ａ）ないしくＣ）により、生ぜしめられる局所ノ
イズを全く持たない。A completely homogeneous storage material layer therefore has no local noise that would otherwise be caused by (a) to c).
（ａ） 粒（数、大きさ、粒姿勢）によって生ぜしめ
られる変動するＸ線量。(a) Variable X-ray dose produced by grains (number, size, grain orientation).
（１）） 光が移動するとき粒状の記憶層による光吸
収時の変動する損失。(1)) Variable losses during light absorption by the granular storage layer as the light travels.
（Ｃ） 粒により制約されるＸ線量から光への変動す
る変換（収量の粒の大きさへの依存性）。(C) Variable conversion of X-ray dose to light limited by grains (dependence of yield on grain size).
局所ノイズの除去は、コントラスト解像度が少なすぎな
い収量を前提としてＸ線量の吸収にだけに依存すること
、すなわち、その都度吸収されるＸ線量の統計的に変動
する数にだけ依存することを意味する。単結晶の例は平
たく引き延ばされた。Removal of local noise means that the contrast resolution depends only on the absorption of the X-ray dose, provided that the yield is not too small, i.e. it depends only on the statistically varying number of X-ray doses absorbed in each case. do. The single crystal example was stretched flat.
ビスマス−ゲルマニウム酸化物の１Ｉ２ＧｅＯ２０）テ
する。蒸着スクリーンの例は、例えばタリウム（Ｔｔ）
をドープされたヨー化セシウムであり、これは少なくと
も２５０℃に加熱された基板上に蒸着される。均質のヨ
ー化セシウムスクリーンは溶融されたヨー化セシウムに
よってつくることもできるし、粒状のヨー化セシウム層
を圧延することによってつくることもできるし、あるい
は同様に準備されたヨー化セシウム結晶層の圧縮によっ
てもつくることができる。ヨー化セシウムからなる均質
の層における割れ目はヨー化セシウムが形造りやすいた
めにみがきによってほとんど除去できる。Bismuth-germanium oxide 1I2GeO20). Examples of vapor deposition screens include, for example, thallium (Tt)
is doped with cesium iodide, which is deposited on a substrate heated to at least 250°C. Homogeneous cesium iodide screens can be made by molten cesium iodide, by rolling a granular cesium iodide layer, or by compacting a similarly prepared crystalline cesium iodide layer. It can also be created by Most of the cracks in the homogeneous layer of cesium iodide can be removed by polishing because cesium iodide is easy to shape.
これらの層のすべては単結晶層へ結合する必要はない。All of these layers need not be bonded to a single crystal layer.
内部に割れ目が残らないことが重要である。It is important that no cracks remain inside.
以下、図面を参照しながら、本発明を実施例について詳
細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to embodiments with reference to the drawings.
第１図にはＸ線像変換装置の概略構成が示されている。FIG. 1 shows a schematic configuration of an X-ray image conversion device.
第２図には撮像装置における変化例を示す。FIG. 2 shows an example of changes in the imaging device.
第１図において、１はＸ線源であり、このＸ線源１から
の線束２が患者３を透過する。このようにして生ぜしめ
られた透過像が本発明による撮像装置４に達する。この
装置４は例えば基板として２Ｍの厚みのアルミ薄板から
なる電極５、この上に施されている光半導体６およびこ
の上に電極７の中間接続のもとにあるＸ線像記憶層８か
らなる。In FIG. 1, 1 is an X-ray source, and a beam 2 from this X-ray source 1 passes through a patient 3. The transmission image produced in this way reaches the imaging device 4 according to the invention. This device 4 consists of an electrode 5 made of a thin aluminum plate with a thickness of 2M as a substrate, an optical semiconductor 6 applied thereon, and an X-ray image storage layer 8 on which an electrode 7 is intermediately connected. .
両電極５および７は導線９および１０と接点１１ａ、Ｉ
ｌｂを備えたスイッチ１１を介して電源１２に接続され
ている。さらに導線９および１０は抵抗１３と増幅器１
４に接続されている。増幅器１４はアナログ・デジタル
変換器１５を介して像信号処理装置１６に接続されてい
る。この処理装置１６は他方では走査装置１７に接続さ
れていて、この走査装置１７からは撮像装置４の記憶層
８を走査するレーザ１８が発射される。Both electrodes 5 and 7 are connected to conductors 9 and 10 and contacts 11a and I
It is connected to a power supply 12 via a switch 11 with lb. Furthermore, conductors 9 and 10 are connected to resistor 13 and amplifier 1.
Connected to 4. The amplifier 14 is connected to an image signal processing device 16 via an analog-to-digital converter 15. This processing device 16 is on the other hand connected to a scanning device 17 from which a laser 18 is emitted which scans the storage layer 8 of the imaging device 4 .
装置４の構成において、第２図に４′として示されてい
るように層６および８は入れ替えることもできる。しか
し、この場合に層６も電極５″、７もレーザ１８が透過
できることが必要である。第１図による実施例の電極５
は５′〜８からなる成層装置４の基板５′としてのみ使
用されている。In the construction of device 4, layers 6 and 8 can also be interchanged, as shown as 4' in FIG. However, it is necessary in this case that both the layer 6 and the electrodes 5'', 7 are transparent to the laser 18.The electrode 5 in the embodiment according to FIG.
is used only as the substrate 5' of the layering device 4 consisting of 5' to 8.
処理装置１６はマイクロプロセッサ１９を有し、これに
はアナログ・デジタル変換器１５がら信号が達する。マ
イクロプロセッサ１９によって制御信号が導線２０を介
してレーザ１８の走査移動制御のために走査装置１７に
導かれる。さらに、信号は接続線２１を介してメモリ２
２に導かれ、このメモリ２２からは信号を導線２３を介
してコンピュータ２４に導くことができる。最後に信号
は導線２５を介してテレビジョンモニタ２６に達シ、こ
こで画面２７上において画像に変換され、観察されるこ
とができる。The processing unit 16 has a microprocessor 19 to which signals from the analog-to-digital converter 15 reach. Control signals are directed by the microprocessor 19 via conductors 20 to the scanning device 17 for controlling the scanning movement of the laser 18. Furthermore, the signal is transmitted to the memory 2 via the connection line 21.
2, and from this memory 22 signals can be led via conductor 23 to a computer 24. Finally, the signal reaches a television monitor 26 via conductor 25 where it is converted into an image on a screen 27 and can be viewed.
患者３からのＸ線束２により記憶層８に生ぜしめられる
記憶像はレーザ１８により光像に変換され、その光像は
像信号を有する光点の形に変換される。それから、この
光点は１００■に置かれている電極５，７間にある半導
体層６に作用する。The stored image produced in the storage layer 8 by the X-ray beam 2 from the patient 3 is converted by the laser 18 into a light image, which light image is converted into the form of a light spot with an image signal. This light spot then acts on the semiconductor layer 6 located between the electrodes 5, 7 located at 100 cm.
光点の作用により光半導体６における光の強さに依存し
て光電流が生しめられ、その結果導線９゜１０、スイッ
チ１１および抵抗１３を介して像信号が増幅器１４に達
することができる。変換器１５を通過し、装置１６にお
ける公知の処理後、モニタ２６の画面２７に患者３の透
視像が現われる。Due to the action of the light spot, a photocurrent is generated depending on the light intensity in the optical semiconductor 6, so that the image signal can reach the amplifier 14 via the conductor 9.10, the switch 11 and the resistor 13. After passing through the transducer 15 and known processing in the device 16, a perspective image of the patient 3 appears on the screen 27 of the monitor 26.
装置１６内に示されている像処理・テレビジョン装置は
「”Ｒｉ：ｉｎｔｇｅｎｐｒａｘｉｓ”６（１９８１）
Ｊの第２３９〜２４６頁に記載されている如くに公知の
ようにしてデジタルＸＩＩ技術にて構成されている。こ
れによりＸ線像の輝度、コントラストなどを付加的に変
化させることができる。The image processing/television device shown in the device 16 is the “Ri:intgenpraxis” 6 (1981)
It is constructed using Digital XII technology in a known manner, as described on pages 239-246 of J. This makes it possible to additionally change the brightness, contrast, etc. of the X-ray image.
レーザ１８により生ぜしめられた光像の半導体層６への
上述の直接伝達のほかに光結合装置を介する伝達も行な
うことができる。モニタ２６の画面２７上で目視可能な
信号列を生ぜしめるために、走査光像がヂレビジョン撮
像カメラなどで撮像されるか、もしくは光学的に層８と
結合された電子増強装置により変換される。か！る装置
は最初に述べた米国特許第３，９７５，６３７号明細書
などに記載されている。In addition to the above-mentioned direct transmission of the light image generated by the laser 18 to the semiconductor layer 6, transmission via an optical coupling device is also possible. In order to produce a signal train that is visible on the screen 27 of the monitor 26, the scanned light image is captured, such as with a direvision imaging camera, or converted by an electronic intensifier optically coupled to the layer 8. mosquito! Such devices are described, such as in the originally mentioned US Pat. No. 3,975,637.
撮像装置４もしくは４′の層構成では、層のある面が粗
くなっている基板５もしくは５′を使用することが望ま
しい。この場合に粗さは像質に乱れが生じないように５
μｍ以下にすべきである。In the layered structure of the imaging device 4 or 4', it is desirable to use a substrate 5 or 5' whose layer has a rough surface. In this case, the roughness should be set to 5 to avoid disturbing the image quality.
It should be less than μm.
茶１図は本発明によるＸ線像変換装置の実施例を示し、
第２図は撮像装置部分の変形例を示す。
１・・・Ｘ線源、２・・・線束、３・・・患者、４・・
・撮像装置、５・・・電極、６・・・光半導体、７・・
・電極、８・・・Ｘ線像記憶層、１１・・・スイッチ、
１２・・・電源、１３・・・抵抗、１４・・・増幅器、
１５・・・アナログ・デジタル変換器、１６・・・処理
装置、１７・・・走査装置、１８・・・レーザ、１９・
・・マイクロプロセッサ、２２・・・メモリ、２４・・
・コンピュータ、２６・・・モニタ。Fig. 1 shows an embodiment of the X-ray image conversion device according to the present invention,
FIG. 2 shows a modification of the imaging device portion. 1...X-ray source, 2...ray flux, 3...patient, 4...
・Imaging device, 5... Electrode, 6... Optical semiconductor, 7...
- Electrode, 8... X-ray image storage layer, 11... switch,
12...Power supply, 13...Resistor, 14...Amplifier,
15... Analog-to-digital converter, 16... Processing device, 17... Scanning device, 18... Laser, 19.
...Microprocessor, 22...Memory, 24...
・Computer, 26...monitor.
Claims (1)
リーンを備えていて、これに付属して走査照射のための
手段が設けられており、さらにその照射結果を電気信号
に変換する手段およびｋのようにして得られた像信号列
を見視可能な像に変−する装置を備えているＸ線像変換
装置において、前記スクリーンが完全に均質の記憶材料
層であることを特徴とするＸ線像変換装置。 ２）記憶材料層は単結晶層として伸延されたビスマス−
ゲルマニウム酸塩からなることを特徴とする特許請求の
範囲第１項記載のＸ線像変換装置。 ３）スクリーンは透明な蒸着ヨー化セシウムからなるこ
とを特徴とする特許請求の範囲第１項記載のＸ線像変換
装置。 ４）ヨー化セシウムは蒸着中少なくとも２５０℃に加熱
される基板上に蒸着されていることを特徴とする特許請
求の範囲第３項記載のＸ線像変換装置。 ５）ヨー化セシウムは５μｍ以下の粗さを有する基板上
に蒸着されていることを特徴とする特許請求の範囲第４
項記載のＸ線像変換装置。[Scope of Claims] 1) It is equipped with a screen that can be excited by Xll for photoelectronic storage, and is provided with means for scanning irradiation, and further converts the result of the irradiation into an electrical signal. In the X-ray image converting apparatus, the screen is a completely homogeneous layer of storage material. Characteristics of the X-ray image conversion device. 2) The memory material layer is bismuth drawn as a single crystal layer.
The X-ray image conversion device according to claim 1, characterized in that it is made of germanate. 3) The X-ray image conversion apparatus according to claim 1, wherein the screen is made of transparent vapor-deposited cesium iodide. 4) The X-ray image converting device according to claim 3, wherein the cesium iodide is deposited on a substrate that is heated to at least 250° C. during deposition. 5) Claim 4, characterized in that the cesium iodide is deposited on a substrate having a roughness of 5 μm or less.
The X-ray image conversion device described in 2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823205693 DE3205693A1 (en) | 1982-02-17 | 1982-02-17 | X-ray image converter |
| DE32056931 | 1982-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58153379A true JPS58153379A (en) | 1983-09-12 |
Family
ID=6155997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58024518A Pending JPS58153379A (en) | 1982-02-17 | 1983-02-16 | X-ray image converter |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS58153379A (en) |
| DE (1) | DE3205693A1 (en) |
| FR (1) | FR2521781B1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2601499B1 (en) * | 1986-07-08 | 1988-09-30 | Thomson Csf | MEMORY PHOTOCONDUCTOR IMAGE DETECTOR |
| JP2753264B2 (en) * | 1988-05-27 | 1998-05-18 | 株式会社日立製作所 | Imaging tube |
| DE59009745D1 (en) * | 1990-02-07 | 1995-11-09 | Siemens Ag | Process for producing a stimulable storage phosphor screen. |
| DE4115725A1 (en) * | 1991-05-14 | 1992-11-19 | Siemens Ag | READING DEVICE FOR A STORAGE LAMP |
| US7199379B2 (en) | 2002-06-28 | 2007-04-03 | Agfa-Gevaert | Binderless storage phosphor screen |
| EP1376614A3 (en) * | 2002-06-28 | 2007-08-08 | Agfa HealthCare NV | Method for manufacturing a transparent binderless storage phosphor screen |
| EP1376615B1 (en) * | 2002-06-28 | 2012-08-29 | Agfa HealthCare NV | Binderless storage phosphor screen |
| US7026632B2 (en) | 2003-06-27 | 2006-04-11 | Agfa-Gevaert | Binderless storage phosphor screen |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3975637A (en) * | 1973-10-23 | 1976-08-17 | Matsushita Electric Industrial Co., Ltd. | Device for storage and display of a radiation image |
| US4268750A (en) * | 1979-03-22 | 1981-05-19 | The University Of Texas System | Realtime radiation exposure monitor and control apparatus |
| EP0042149B1 (en) * | 1980-06-16 | 1987-03-04 | Kabushiki Kaisha Toshiba | Radiation excited phosphor screen and method for manufacturing the same |
-
1982
- 1982-02-17 DE DE19823205693 patent/DE3205693A1/en not_active Withdrawn
-
1983
- 1983-02-04 FR FR8301765A patent/FR2521781B1/en not_active Expired
- 1983-02-16 JP JP58024518A patent/JPS58153379A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2521781B1 (en) | 1986-11-28 |
| FR2521781A1 (en) | 1983-08-19 |
| DE3205693A1 (en) | 1983-08-25 |
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