JPS58152225A - Binary coding device for light level - Google Patents
Binary coding device for light levelInfo
- Publication number
- JPS58152225A JPS58152225A JP57034794A JP3479482A JPS58152225A JP S58152225 A JPS58152225 A JP S58152225A JP 57034794 A JP57034794 A JP 57034794A JP 3479482 A JP3479482 A JP 3479482A JP S58152225 A JPS58152225 A JP S58152225A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- output
- photodetector
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 claims abstract description 18
- 239000000835 fiber Substances 0.000 claims abstract description 3
- 238000007493 shaping process Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013306 transparent fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/42—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Communication System (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、光フアイバ伝送における光中継機等に好適
な光レベル２値化装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical level binarization device suitable for optical repeaters and the like in optical fiber transmission.
従来、伝送途中で波形の鈍った入力デジタル光を、正確
な波形の出力光に変換する場合、入力光を受光素子で検
知して光／電気変換した後、これを電気的に波形整形し
て、再び発光素子で電気／光変換を行ない、出力光を得
るという方法が採用されている。Conventionally, when converting input digital light whose waveform became dull during transmission into output light with a precise waveform, the input light was detected by a light receiving element, converted into light/electricity, and then electrically waveform-shaped. , a method has been adopted in which the light emitting element performs electrical/optical conversion again to obtain output light.
しかしながら、この方法では発光素子と受光素子の中間
に複雑な電気回路が必要な上、入力光と出力光の時間遅
れの中に、発光素子と受光素子の遅延時間に加えて、上
記電気回路の遅延時間が含まれるために、入力光と出力
光の位相遅れが大きくなり、このことが全体の光システ
ムに悪影響を及ぼしている欠点がある。However, this method requires a complicated electric circuit between the light emitting element and the light receiving element, and the time delay between the input light and the output light includes the delay time between the light emitting element and the light receiving element, as well as the delay time of the electric circuit described above. Since the delay time is included, there is a large phase lag between the input light and the output light, which has a disadvantage in that it has an adverse effect on the entire optical system.
この発明は上記の問題に鑑みなされたもので、その目的
とするところは、例えばこのような光波形整形等を行な
う場合に、入出力光間の応答速度を改善し、これにより
位相遅れを可及的に低減させることにある。This invention was made in view of the above problem, and its purpose is to improve the response speed between input and output light, and thereby eliminate phase delay, when performing such optical waveform shaping, etc. The goal is to reduce this as much as possible.
この発明は上記の目的を達成するために、入力用光ファ
イバの端面に対向して受光素子を設けるとともに、出力
用光ファイバの端面に対向して同様に発光素子を設け、
かつ前記発光素子は、受光素子から出力される光電流で
駆動され、更に前記受光素子と発光素子とは、前記発光
素子からの出力光の一部が前記光ファイバの端面で反射
して前配受光本子に到達するように両者を配置し、これ
により画素子間に一定の正帰還をかけて入力光に苅する
出力光のしきい値特性を持たせるとともに、応答速度を
改善したものである。In order to achieve the above object, the present invention provides a light receiving element opposite to the end face of an input optical fiber, and similarly provides a light emitting element opposite to the end face of an output optical fiber.
The light-emitting element is driven by a photocurrent output from the light-receiving element, and the light-receiving element and the light-emitting element are arranged so that a part of the output light from the light-emitting element is reflected by the end face of the optical fiber and the light emitting element is driven by a photocurrent output from the light-receiving element. Both are arranged so that the light reaches the main light-receiving element, thereby creating a constant positive feedback between the pixel elements, giving the input light a threshold characteristic for the output light, and improving the response speed. .
以下に、この発明に好適な一実施例を添付図面に従って
詳細に説明する。A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
第１図は本発明に係わる装置の一例を示す断面図である
。同図において、入力用光ファイバ１よりの入力光Ｌ１
は、その端面１ａに対向して設けられた受光素子４（こ
こでは、＾速フォトトランジスタ）に入射するようにな
っており、また発光索子９（ここではＬＥＤ）より出射
した光の大部分Ｌ２は、出力用光ファイバ２に導入され
て外部に出力される。FIG. 1 is a sectional view showing an example of a device according to the present invention. In the same figure, input light L1 from input optical fiber 1
The light is incident on the light receiving element 4 (in this case, a fast phototransistor) provided opposite to the end surface 1a, and most of the light emitted from the light emitting element 9 (in this case, an LED) is L2 is introduced into the output optical fiber 2 and output to the outside.
他方、発光素子９の出力光の一部分Ｌ３は、上記２本の
光ファイバ１．２の端面１ａ、２ａにコーティングされ
た半透明の反１ｉ）１躾３によって反射されて受光素子
４に導入される構造になっている。On the other hand, a portion L3 of the output light from the light emitting element 9 is reflected by the semi-transparent fiber coated on the end surfaces 1a and 2a of the two optical fibers 1.2 and introduced into the light receiving element 4. It has a structure that allows
また、受光素子４の出力端子（ここでは、■ミッタ）と
発光素子９０入力端子（ここでは、アノード）は、ステ
ム１３によって電気的に接続されており、このため発光
素子９は受光素子４からの光電流によって直接駆動され
る。Furthermore, the output terminal of the light-receiving element 4 (here, ■mitter) and the input terminal of the light-emitting element 90 (here, the anode) are electrically connected by the stem 13, so that the light-emitting element 9 is directly driven by the photocurrent of
なお、同図において５は電極、６はフォトトランジスタ
を構成するｎ型半導体、７はフォトトランジスタを構成
するｐ型半導体、８はフォトトランジスタを構成する０
型半導体、１０はＬＥＤを構成するｎ型半導体、１１は
ＬＥＤを構成するｎ型半導体、１２はＬＥＤを構成する
ｐ型半導体、１４はボンディングワイヤである。In the same figure, 5 is an electrode, 6 is an n-type semiconductor that makes up the phototransistor, 7 is a p-type semiconductor that makes up the phototransistor, and 8 is 0 that makes up the phototransistor.
10 is an n-type semiconductor forming the LED, 11 is an n-type semiconductor forming the LED, 12 is a p-type semiconductor forming the LED, and 14 is a bonding wire.
次に、第２図に本発明装置の電気的等価回路を示す。こ
の回路に基づいて本発明の詳細な説明する。Next, FIG. 2 shows an electrical equivalent circuit of the device of the present invention. The present invention will be explained in detail based on this circuit.
端子Ａ−Ｃ間に、直流電圧を印加し、また端子Ａ−Ｂ問
およびＢ−Ｃｌｌｌに所定の外部抵抗器ＲＡ。A DC voltage is applied between terminals A and C, and a predetermined external resistor RA is applied between terminals A and B and B and Cll.
Ｒ８を接続する。Connect R8.
なお、ここで外部抵抗器ＲＡ、ＲＢは、この回路の動作
点を決定するためのもので、これらの抵抗値の値を適当
に選ぶことにより、受光素子４と発光素子９１１の動作
関係を決定することができる。Note that the external resistors RA and RB are used to determine the operating point of this circuit, and by appropriately selecting the values of these resistances, the operational relationship between the light receiving element 4 and the light emitting element 911 is determined. can do.
ここで、この実施例による受光素子４の入力光対出り電
流特性を第３図（ａ）に、発光索子９の入り電流対出力
光特性を第３図（ｂ）にそれぞれ示す。Here, the input light versus output current characteristics of the light receiving element 4 of this embodiment are shown in FIG. 3(a), and the input current versus output light characteristics of the light emitting cable 9 are shown in FIG. 3(b).
以上の回路構成において、受光素子４に光ファイバ１よ
りの入射光Ｌ１が入射すると、これにともない、コレク
タ電流■が増加する。In the above circuit configuration, when the incident light L1 from the optical fiber 1 enters the light-receiving element 4, the collector current ■ increases accordingly.
電流ｌが増加すると、発光素子９の発光量が増加し、こ
の出力光の一部がＬ３が、光ファイバ１゜２のコーティ
ングされた反１１１１１１３によって反射され、再び受
光素子４に入射する。As the current 1 increases, the amount of light emitted from the light emitting element 9 increases, and part of this output light L3 is reflected by the coated fiber 1111113 of the optical fiber 1.degree. 2 and enters the light receiving element 4 again.
このようにして、正帰還ループが構成されることになり
、発光素子９の出力光が患部に増加し、これによりしき
い値特性を持つことになる。In this way, a positive feedback loop is formed, and the output light of the light emitting element 9 increases to the affected area, thereby providing a threshold characteristic.
逆に、光ファイバ１からの入射光線が減少していく場合
を考えると、増加の場合と全（逆な過程を経るのである
が、このとき既に発光素子９からの光の一部は受光素子
４に入射しているため、光ファイバ１の入射光が減少し
ていくときに発光素子４の出力光が急激に減少するしき
い値は、増加の場合よりやや少い入射光量において表わ
れることになり、このため、第３図（Ｃ）に示１如くシ
ステリシス特性が得られることになる。Conversely, if we consider the case where the incident light ray from the optical fiber 1 decreases, all of the light rays from the optical fiber 1 go through the opposite process to the case where it increases. 4, the threshold value at which the output light of the light emitting element 4 suddenly decreases when the incident light of the optical fiber 1 decreases appears at a slightly smaller amount of incident light than when it increases. Therefore, a systeresis characteristic as shown in FIG. 3(C) is obtained.
かくしてこの実施例に係わる光レベル２値化装胃よれば
、僅かな回路部品によって光増幅を行なうことができる
とともに、遅延特性についても発光、受光各素子の応答
速度のみに依存するため、比較的高い周波数で使用する
ことができ、またし □きい値特性とヒステリシス特性
によって良好な波形整形が行なえるという優れた特徴を
有する。Thus, according to the optical level binarization device according to this embodiment, optical amplification can be performed with a small number of circuit components, and the delay characteristics are also relatively high because they depend only on the response speeds of the light emitting and light receiving elements. It has the excellent feature of being able to perform good waveform shaping due to its threshold characteristics and hysteresis characteristics.
なお、前記実施例においては、受光素子としてフォトト
ランジスタを使用したが、この他フォトダイオード等の
他の受光素子でも良いことは勿論であり、また発光素子
としても発光ダイオードの他に、レーザダイオード等で
も良いことは勿論である。In the above embodiments, a phototransistor was used as the light receiving element, but it is of course possible to use other light receiving elements such as a photodiode, and as a light emitting element, in addition to a light emitting diode, a laser diode, etc. But of course it's a good thing.
更に前記実施例においては、この発明に係わる光レベル
２値化装置を光中継機として用いた場合を説明したが、
本発明装置の用途はこれに限定されるものではなく、例
えば入力アナログ光線が一定のレベルに達した場合、こ
れを検知して何らかの出力を発するようなセンサあるい
はコンパレータ等として使用することもでき、その他種
々の用途をｈするものである。Furthermore, in the embodiments described above, the case where the optical level binarization device according to the present invention is used as an optical repeater is explained.
The use of the device of the present invention is not limited to this, for example, it can also be used as a sensor or comparator that detects when the input analog light beam reaches a certain level and outputs some kind of output. It is used for various other purposes.
以上の実施例の説明でも明らかなように、この発明に係
わる光レベル２値化装置によれば、入力光線を所定のレ
ベルを基準として２値化し、その出力を２値化光線で出
力するような種々の用途において、これを極めて簡単な
構成によりしかも高速に行なうことができるとともに、
２値化に際して充分なヒステリシス特性を有することか
ら、安定した２値化動作を行なわせることができる。As is clear from the description of the embodiments above, the light level binarization device according to the present invention binarizes an input light beam based on a predetermined level, and outputs the output as a binarized light beam. In various applications, this can be done with an extremely simple configuration and at high speed.
Since it has sufficient hysteresis characteristics during binarization, stable binarization operation can be performed.
第１図はこの発明に係わる光レベル２値化装置の一例を
示す断面図、第２図は同装置の電気的等価回路を示寸回
路図、第３図（ａ ）は受光素子の特性を示す曲線、第
３図（ｂ）は発光素子の特性を示す曲線、第３図（Ｃ）
は本装置の入出力特性を示１曲線、第４図は本装置を波
形整形器として使用した場合における、光入力波形と光
出力波形との関係を示すグラフである。
１・・・・・・・・・・・・・・・入力用光ファイバｉ
ａ、２ａ・・・端面
２・・・・・・・・・・・・・・・出力用光ファイバ３
・・・・・・・・・・・・・・・反射膜４・・・・・・
・・・・・・・・・受光素子９・・・・・・・・・・・
・・・・発光素子１３・・・・・・・・・・・・ステム
特許出願人
立石電機株式会社
第１図
１−：
＼＼＼
第２図
一つＢ−
２１４
＼ １−１５
）−
＋
Ｒ８Fig. 1 is a sectional view showing an example of a light level binarization device according to the present invention, Fig. 2 is a circuit diagram showing the electrical equivalent circuit of the same device, and Fig. 3 (a) shows the characteristics of the light receiving element. The curve shown in FIG. 3(b) is the curve showing the characteristics of the light emitting element, FIG. 3(C)
1 is a curve showing the input/output characteristics of the present device, and FIG. 4 is a graph showing the relationship between the optical input waveform and the optical output waveform when the present device is used as a waveform shaper. １・・・・・・・・・・・・Input optical fiber i
a, 2a... End face 2... Output optical fiber 3
・・・・・・・・・・・・Reflection film 4・・・・・・
...... Light receiving element 9 ......
・・・・Light-emitting element 13・・・・・・・・・Stem patent applicant Tateishi Electric Co., Ltd. Figure 1 1-: \\\\ Figure 2 One B- 214 \ 1-15 )- +R8
Claims (1)
光素子と； 出力用光ファイバの端面に対向して設けられた発光素子
とを備え； 前記発光素子は、前記受光素子から出力される光電流で
駆動され、かつ、前記受光素子と発光素子とは、前記発
光素子からの出力光の一部が、前記ファイバの端面で反
射して前記受光素子に到達するように配置されているこ
とを特徴とする光レベル２値化装置。(1) A light-receiving element provided facing the end face of the input optical fiber; and a light-emitting element provided facing the end face of the output optical fiber; The light-receiving element and the light-emitting element are arranged such that a part of the output light from the light-emitting element is reflected by an end face of the fiber and reaches the light-receiving element. A light level binarization device characterized by:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57034794A JPS58152225A (en) | 1982-03-05 | 1982-03-05 | Binary coding device for light level |
| US06/472,244 US4565924A (en) | 1982-03-05 | 1983-03-04 | Light signal binary device with optical feedback |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57034794A JPS58152225A (en) | 1982-03-05 | 1982-03-05 | Binary coding device for light level |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58152225A true JPS58152225A (en) | 1983-09-09 |
Family
ID=12424164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57034794A Pending JPS58152225A (en) | 1982-03-05 | 1982-03-05 | Binary coding device for light level |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58152225A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053473U (en) * | 1991-06-25 | 1993-01-19 | 大和ハウス工業株式会社 | Floor closeout |
-
1982
- 1982-03-05 JP JP57034794A patent/JPS58152225A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053473U (en) * | 1991-06-25 | 1993-01-19 | 大和ハウス工業株式会社 | Floor closeout |
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