JPS5814680A - Solid state image pickup element - Google Patents

Abstract

PURPOSE:To avoid the generation of linear flaws on an image pickup screen, by connecting a spare vertical shift register having a function to deliver the signals to the same line of a vertical gate line with the same timing to the other end of the vertical gate line of each picture element. CONSTITUTION:A vertical shift register 10' is connected to the other end of each of vertical gate lines 6a, 6b and 6c which are connected to a vertical shift register 10. The register 10' has an exactly equal function to the register 10 and is driven with the same timing. In such constitution, the left and right registers 10 and 10' are driven simultaneously and with the same timing when a solid state image pickup element 1 works. Thus the pulses are applied simultaneously and with the same timing to the lines 6a, 6b and 6c from both registers 10 and 10'. Accordingly if the line 6b has a disconnection, all signals at and after a picture element 4' connected to the gate line 6b' can be read owing to the pulse applied from the register 10'. Thus no linear flaw is observed on the image pickup screen.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state image sensing device, which prevents the occurrence of one scratch on an image sensing screen.

FIG. 1 is an enlarged circuit diagram of the main parts for explaining an example of the conventionally proposed MO8 type solid-state sensor. In the figure, a pixel 4 constituted by a solid-state image sensor IFi, a photodiode 2 that converts light into an electrical signal, and a vertical switch M(Xi)j register 3 that transfers the signal charge of the photodiode 2 is arranged in rows and columns. A large number of pixels 4 are arranged in each direction, and each of these pixels 4 receives a signal 1jlK"*5ba5@ and a vertical gate Ij8m,
6 +, lIgKII, and the vertical signal l[5m, 5, 5at! Horizontal switch for reading out signal charges MO8) Horizontal shift) L/ which sequentially generates pulses to read out outputs corresponding to signal charges in horizontal signal silver 8 via transistor T
Register HC connected R, -10,000, vertical gate line 11m58b
, le#i, each vertical switch MO8) that reads signal charges from each photodiode 2)? Pulses are sequentially generated in the register 3.

The solid-state image sensor configured in this manner has pixels tK sequentially selected by the horizontal shift register and the vertical shift register to#C from the video bias 11 to the load resistor 12.
．． Horizontal switch Mo1l) Transistor TO horizontal signal [
A charging current flows through the capacitor 8, and a voltage drop caused by the load resistor 12 is detected as an original signal, which is amplified by a preamplifier 14 via a capacitor 13, and a signal current is output from an output terminal 15.

However, the solid-state imaging device according to the above configuration (not shown) is
l-rangestaff, horizontal shift register 8° vertical shift register 10 cape transistor and its signal distribution S
Since several tens of 11f are integrated and formed, it is technically extremely difficult to completely eliminate defects caused by this process. Among these defects, the occurrence rate of disconnection in signal wiring is the highest,
For example, as shown in the same figure, if a disconnection point (A section) occurs in a part of *a gate #6b, the vertical gate line @b' on the right side of the disconnection point (A section) will have [l[shift register 10
No pulse is applied, and therefore no signal current can be obtained from the row to the right of the disconnected vertical goose wire sblK connected to the sparrow chart 7. Therefore, as shown in the plan view of the main part in FIG. It is observed as a line scratch IT in the right lateral direction on the imaging screen 16, which deteriorates the image quality and is one of the causes of a decrease in the yield of solid-state imaging devices.

Therefore, the present invention provides a solid-state image sensor that improves the yield of solid-state image sensors by relieving defective signal lines by providing shift registers having the same function connected in parallel to the same signal line. is intended to provide.

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 3 is an enlarged circuit configuration diagram of a main part corresponding to FIG. 1 showing an example of a solid-state image pickup device according to the present invention. Since the same symbols as those in the previous figure represent the same elements, a description thereof will be omitted. In FIG. 3, vertical shift registers IOK (vertical gates) 8a and ltb are respectively connected.

A vertical shift register 10' having exactly the same function as the vertical shift register 10 and driven at the same timing is connected to the other end side I/c of 6@.

According to such a configuration, when the solid-state image sensor 1 is operated, by driving the left and right shift registers 1o and trft simultaneously and at the same timing,
Vertical gate a 6' * 6 b * 6 b t
6 @K Vertical shift register tO*10
From ' to ', pulses are applied at the same time and at the same timing. Therefore, the vertical gate Iiii! ! When a disconnection point (part A) occurs in 6b, in the past, it was impossible to read out the signal from the right pixel 4' from the disconnection point (part A).
Since a pulse is applied from the vertical gate line 8b/pixel 4' connected to the vertical gate line 8b, it is possible to read all the signals after the connected pixel 4', and there is no line scratch 1 on the imaging screen 16 shown in FIG.
T is no longer observed, line scratches 170. JYou will be able to obtain a painting that does not exist at all.

In addition, in the above embodiment, [I Wataru Schiff) l/fi [gate @ 6 a t 6 b] connected to register 0
, 6 e has been described with respect to the case where another vertical shift register 10 having the same function and driving at the same timing is provided, but the present invention 1j11 is not limited to this; 95 m, 5 b*
5 At the other end of C, another horizontal shift register that has the same function as the horizontal shift register 9 and is driven at the same timing is connected via a horizontal switch MO8 transistor to prevent line damage in the vertical direction. , and the same effect as above can be obtained.

As explained above, according to the present invention, a high quality and highly reliable solid-state imaging device without any line scratches on the imaging (#iii) surface can be obtained with high productivity, which is an extremely excellent effect.

[Brief Description of the Drawings] Fig. 1 is an enlarged circuit diagram of main parts showing an example of a conventional solid-state image sensor, and Fig. 2 is a picture screen diagram showing an example of line scratches observed on an imaging screen. , FIG. 3 shows an example of a solid-state image sensor according to the present invention. FIG. 2 is an enlarged partial circuit configuration diagram. 1... one solid-state image sensor, 2... photodiode)"
, 3@--vertical switch MOB transistor,
4, 4'@11 @11 pixels, 5 a, 5b, 5
t1 m * * m vertical signal spelling, sa*5btsb'
, se...Vertical game) line, r...116 horizontal switch MO8) j register, 8...Horizontal signal line, 9...
...Horizontal shift register, 10.10'...Vertical shift register, 11@...Video bias, 12.
・1111 load resistance, 13...capacitor, 14.
...Preamplifier, 15...output terminal.

Claims (1)

[Claims] A large number of pixels are arranged in the row and column directions, each consisting of a photodiode that accumulates an optical signal and a transistor that moves the signal charge of the photodiode, and one end of the 11m gate line of each pixel is In a solid-state imaging device that is connected to a vertical shift register to select the row direction of the pixels, there is a standby standby having a function of outputting a signal at the same timing to the same row of the gate line at the other end of the vertical gate. A solid-state image sensor that is a series of vertical shift registers.