JPS58123472A - Semiconductor characteristics measuring apparatus - Google Patents

Semiconductor characteristics measuring apparatus

Info

Publication number
JPS58123472A
JPS58123472A JP625482A JP625482A JPS58123472A JP S58123472 A JPS58123472 A JP S58123472A JP 625482 A JP625482 A JP 625482A JP 625482 A JP625482 A JP 625482A JP S58123472 A JPS58123472 A JP S58123472A
Authority
JP
Japan
Prior art keywords
signal
handler
contact
output
classification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP625482A
Other languages
Japanese (ja)
Inventor
Hozumi Takayama
高山 穂積
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP625482A priority Critical patent/JPS58123472A/en
Publication of JPS58123472A publication Critical patent/JPS58123472A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor

Abstract

PURPOSE:To prevent misjudgement of characteristics of a semiconductor element due to poor contact between leads thereof and a handler measuring element by checking for poor contact between the leads of the semiconductor element and the measuring element, evaluating the level of components of a test signal with a specified frequency, which is applied to the input of the semiconductor element. CONSTITUTION:A test signal is applied to the input of a semiconductor element from an oscillator 23 for generating a sine wave signal with the frequency higher than the frequency of noise to be detected with a noise detection circuit 16 as contact testing signal and the level of the test signal components contained in the output of the element is evaluated in the route of an amplifier 15 a band filter 24 an AC/DC converter 25 comparator 26 to detect the propriety of contact between leads of the semiconductor and a measuring element 12. When the contact is defective a handler interface 22 prohibits the sorting output from an analog comparator 17 and another sorting output (defective contact signal) D' is sent to a handler 10. This prohibits the sorting by the handler 10 in response to any poor contact thereby elimiating missorting confusing the judgement of the quality.

Description

【発明の詳細な説明】 発明の技術分野 本発明は、半導体素子の製造に際してその電気特性を自
動分類装置(以下)・ンドラと言う)により自動的に測
定する場合に用いられる半導体特性測定装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a semiconductor characteristic measuring device used when manufacturing semiconductor devices to automatically measure their electrical characteristics using an automatic sorting device (hereinafter referred to as "nola"). .

発明の技術的背景 この種の従来の装置社第1図に示すように構成されてい
る。すなわち、ハンドラ10において、1ノは供試素子
たとえばトランジスタ、12はこの供試トランジスタ1
ノに接触する接触子(以下測子と言う)である。131
〜JJ。
TECHNICAL BACKGROUND OF THE INVENTION A conventional device of this type is constructed as shown in FIG. That is, in the handler 10, 1 is the device under test, such as a transistor, and 12 is the transistor under test 1.
This is a contact element (hereinafter referred to as a probe) that comes into contact with the sensor. 131
~JJ.

は第1〜第3の測定端子であ夛、それぞれ対応して前記
測子12を介して前記トランジスタ11のコレクタ、ペ
ース、エミ、りに接続される。そして、上記トランジス
タ11の雑音電圧を測定する場合には、前記ベースに接
続された第2の測定端子13雪は信号源抵抗14を、介
して接地され、前記コレクタ、エミッタに接続される第
1.第3の測定端子’3te13sIfi増幅器15の
入力端に接続されている。この増幅器15Fi、前記ト
ランジスタ11からの信号入力(雑音信号)を10〜1
000 mV 位まで増幅するためのものである。16
は上記増幅器15の出力雑音信号をある時間積分して直
流レベルに変換する雑音検出回路である。17はこの雑
音検出回路16の出力レベルが第1〜第3の区分のいず
れに該当するかを比較判定して分類し、第1〜第3の分
類出力A、B、C(これらは良品、低レベル側不良品、
寓レベル側不良品を表わす)を発生するアナログ比較器
である。18はこの比較器17からの分類出力をハンド
ラ10へ送ルハンドラインターフェーステアシ、ハンド
ラ10はこの入力分類信号に基いて供試トランジスタl
1K−分類する。1 背景技術の問題点 上記半導体特性測定装置において、ハンドラJ(+の測
子12と供試トランジスタ11との接触時に、誤って供
試トランジスタ11のリード同志が接触し、あるいはこ
のリードがハンドラ10のシュートの金属に接触して短
絡したり、また測子12と上記リードとの接触不良、場
合によれば非接触の開放状態のままとなシ、供試トラン
ジスタ11の雑音電圧を正しく測定できないことがあっ
た。上記接触不良の場合には、増幅器15の雑音大刀レ
ベルが正常接触時の雑音入力レベルに比べて通常は小さ
いため、前記アナログ比較器17からは低レベル側不良
品を表わす第2分類信号Bが出力するようKなる。
are first to third measuring terminals, which are respectively connected to the collector, pace, emitter, and terminal of the transistor 11 via the probe 12. When measuring the noise voltage of the transistor 11, the second measurement terminal 13 connected to the base is grounded via the signal source resistor 14, and the first measurement terminal 13 connected to the collector and emitter is grounded via the signal source resistor 14. .. The third measurement terminal '3te13sIfi is connected to the input terminal of the amplifier 15. This amplifier 15Fi has a signal input (noise signal) from the transistor 11 of 10 to 1
This is for amplifying up to about 1,000 mV. 16
is a noise detection circuit that integrates the output noise signal of the amplifier 15 over a certain period of time and converts it into a DC level. 17 compares and classifies to which of the first to third classifications the output level of the noise detection circuit 16 corresponds, and classifies the first to third classification outputs A, B, and C (these are non-defective products, Defective products on the low level side,
This is an analog comparator that generates a defective product (representing a defective product on the level side). A handler interface 18 sends the classification output from the comparator 17 to the handler 10, and the handler 10 selects the transistor under test based on this input classification signal.
1K-Classify. 1. Problems with the Background Art In the semiconductor characteristic measuring device described above, when the handler J (+ probe 12 and the transistor under test 11 come into contact with each other), the leads of the transistor under test 11 may come into contact with each other by mistake, or this lead may contact the handler 10. The noise voltage of the test transistor 11 cannot be measured correctly if it contacts the metal of the chute and short-circuits, or if the contact between the probe 12 and the lead is poor, or if it remains open without contact. In the case of the above contact failure, the noise level of the amplifier 15 is usually smaller than the noise input level during normal contact, so the analog comparator 17 outputs a signal indicating a defective product on the low level side. K so that the 2-classification signal B is output.

しかし、このような接触不良の場合には、供試トランゾ
スタ11のリードと測子12との接触状態が不安定であ
るため、供試トランゾスタ11の雑音電圧出力信号にス
ノ々イク電圧が重畳されることがあシ、このときKはア
ナログ比較1 器17の入力レベルが大きくなるので、誤りて良品を表
わす第1分類信号ムが出方することがあった。
However, in the case of such a poor contact, the contact state between the lead of the test transoster 11 and the probe 12 is unstable, so that the noise voltage output signal of the test transistor 11 is superimposed on the noise voltage output signal. At this time, K is the analog comparator 1. Since the input level of the analog comparator 17 becomes high, the first classification signal erroneously indicating a good product may be output.

発明の目的 本発明は上記の事情に鑑みてなされたもので。Purpose of invention The present invention has been made in view of the above circumstances.

半導体素子リードとハンドラ側子との接触不良に起因し
て素子特性を誤って判定することを防止し得る半導体特
性測定装置を提供するものである。
An object of the present invention is to provide a semiconductor characteristic measuring device that can prevent erroneous determination of device characteristics due to poor contact between a semiconductor device lead and a handler side piece.

発明の概要 すなわち、本発明は、所定周波数の試験信号を素子入力
に加え、素子出力信号を上記試験信号成分と雑音信号成
分とに分離し、この試験信号成分のレベル判定によシ素
子リードと測子との接触不良の有無を検出し、接触不良
でないときのみ前記雑音信号成分のレベル判定による分
類出力を利用するようにしたものであシ、接触不良のと
きには上記分類出力は利用されないので誤った分類判定
が行なわれなくなる。
Summary of the Invention That is, the present invention applies a test signal of a predetermined frequency to an element input, separates the element output signal into the test signal component and a noise signal component, and determines the level of the test signal component to determine the level of the element lead. The system detects the presence or absence of poor contact with the probe, and uses the classification output based on the level judgment of the noise signal component only when there is no contact. When there is poor contact, the classification output is not used, so it is possible to avoid errors. classification judgment will not be performed.

発明の実施例 以下、図th+を参照して本発明の一実施例を詳細に駅
、明する。X2図に示す半導体特性測定装置は、第1図
t−該照して前述した装置<h、べて、接触不良検出回
路20を設け、この回路2oからの試験信号を抵抗21
を介して第2測定端子13鵞に印加することによって素
子入力に加え、上記回路20からの接触良好、不良の検
出出力に応じてハンドラインターフェース22がら第1
〜第3分類出力AI 、 B/、σおよび第4分類出力
(接触不良信号)D’t−選択的に出力させるようにし
た点が異な)、その他は同じであるから第2図中第1図
と同一部分は同一符号を付してその説明を省略する。
Embodiment of the Invention Hereinafter, an embodiment of the present invention will be explained in detail with reference to FIG. The semiconductor characteristic measuring device shown in FIG.
In addition to the element input by applying voltage to the second measurement terminal 13 via the handler interface 22 in response to the detection output of good or bad contact from the circuit 20,
〜3rd classification output AI, B/, σ and 4th classification output (contact failure signal) D't-The difference is that it is selectively output), and the others are the same, so 1st in Fig. 2 The same parts as those in the figures are given the same reference numerals and the explanation thereof will be omitted.

上記接触不良検出回路20は、雑音検出回路16により
検出する雑音周波数より高い周波数(たとえば50 k
Hz )の正弦波信号を接触試験信号として発生する発
振器23と、前記増幅器15の出力信号から上記試験信
号成分を分離する帯域F波器24と、このP波器24の
出力信号をAC/DC変換するAC/DCコンバータ2
5と、との壬ンパータ25の出力レベルを所定基準レベ
ルと比較判定し、判定結果が上記基準レベル以上である
か否かに応じてハンドラ1oにおける素子リードと測子
12との接触状態の良好、不良を表わす接触状態検出出
力を発生するコン・ンレータ26と、前記増幅器15の
出力信号から雑音信号成分のみを分離して前記雑音検出
回路16に専く低域p波器(遮断周波数はたとえば約2
0 ki(z ) 27とからなる。
The contact failure detection circuit 20 operates at a frequency higher than the noise frequency detected by the noise detection circuit 16 (for example, 50 k
An oscillator 23 that generates a sine wave signal (Hz) as a contact test signal, a band F wave generator 24 that separates the test signal component from the output signal of the amplifier 15, and an AC/DC converter for the output signal of the P wave generator 24. AC/DC converter 2 to convert
The output level of the pin parter 25 of 5 and 5 is compared with a predetermined reference level, and depending on whether the judgment result is above the reference level or not, a good contact state between the element lead and the probe 12 in the handler 1o is determined. , a converter 26 that generates a contact state detection output indicative of a defect, and a low-frequency p-wave generator (the cutoff frequency is, for example, Approximately 2
0 ki(z) 27.

而して、上記構成の半導体特性測定装置におい一〇eよ
、ハフドラ10→増幅器15→低域P波器27−+雑音
検出回路16→アナログ比較器17の経路で素子出力に
含まれる雑音信号のレベルを分類判定して良品、低レベ
ル側不良品。
In the semiconductor characteristic measuring device having the above configuration, the noise signal contained in the element output is detected in the path from the half driver 10 to the amplifier 15 to the low-frequency P wave generator 27-+noise detection circuit 16 to the analog comparator 17. Classify and judge the level of non-defective products and low-level defective products.

1にレベル側不良品の分類信号A、B、Cを出力する。1, outputs classification signals A, B, and C for defective products on the level side.

−方、発#X器23からの試験信号が素子入力をて加え
られているので、素子出力に含まれる試験信号成分が増
幅器15→帝域p波器24→へC/υCコンバータ25
→コン/ンレータ26の1路でレベル判定されて素子り
ニードと測子12との接触状幽の良否が検出される。
- On the other hand, since the test signal from the generator 23 is added to the element input, the test signal component included in the element output is transferred from the amplifier 15 to the impedance p wave generator 24 to the C/υC converter 25.
→The level is determined by one pass of the converter/converter 26, and the quality of the contact between the element needle and the probe 12 is detected.

そして、ハンドラインターフェース?2Fi、接触不良
検出回路20から接触良好検出出力が導かれているとき
は、前記アナログ比較器ノアからの分類信号に応じた分
類出力を・・ンドラ10に送り、接触不良検出出力が導
かれているときはアナログ比較器17からの分類信号に
応じた分類出力1!−禁止し、第4分類出力(接触不良
信号)D′  をハンドラ10に送る。
And the handler interface? 2Fi, when a good contact detection output is led from the poor contact detection circuit 20, a classification output corresponding to the classification signal from the analog comparator Noah is sent to the controller 10, and a poor contact detection output is led. When there is a classification output 1 according to the classification signal from the analog comparator 17! - prohibit and send the fourth classification output (bad contact signal) D' to the handler 10;

したがって、接触不良時にはハンドラ10における分類
が禁止され、従来例で前述したような接触不良時のス・
ダイク信号により誤って不良品を良品と判定することに
起因するような誤分類が生じなくなる。
Therefore, classification in the handler 10 is prohibited in the case of a contact failure, and classification in the case of a contact failure as described above in the conventional example is prohibited.
Misclassification caused by erroneously determining a defective product as a non-defective product using the dike signal does not occur.

なお、上記実施例における接触不良検出回路20は、前
述したような接触不良を検出するだけでなく、素子入力
として加える試験信号、X干出力から分離された試験信
号の測定形態等を適宜設定することによって素子の緒特
性を測定する機能を兼備する圭うな変形実施が可能であ
る。
The contact failure detection circuit 20 in the above embodiment not only detects the contact failure as described above, but also appropriately sets the test signal to be added as an element input, the measurement form of the test signal separated from the X output, etc. By doing so, it is possible to implement a significant modification that also has the function of measuring the characteristics of the element.

発明の効果 上述したように本発明の半導体特性測定装置によれば、
ハンドラの測子と供試半導体素子のリードとの接触が良
好なときのみ素子特性分類出力を利用してハンドラで素
子の分類を行なわせ、前記接触が不良のときは素子分類
を行なわないようにしたので、接触不良時においてスノ
やイク雑音等に起因して不良品を鋲って良品と判定する
ような誤分類を防止できる。
Effects of the Invention As described above, according to the semiconductor characteristic measuring device of the present invention,
The handler is configured to classify devices using the device characteristic classification output only when there is good contact between the probe of the handler and the lead of the test semiconductor device, and not to classify devices when the contact is poor. Therefore, it is possible to prevent misclassification in which a defective product is judged as a non-defective product due to smudging noise or the like when there is a contact failure.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体特性測定装置を示すプU、り図、
第2図は本発明に係る半導体特性測定装置の一実施例を
示すブロック図である。 lO・・・ハンドラ、11・・・供試トランジスタ、1
2・・・測子、16・・・雑音検出回路、17・・・ア
ナログ比較器、20・・・接触不良検出回路、22・・
・ハンドラインターフェース、23・・・発振器、24
.27・・・p波器、25・・・AC/DCコン/イー
タ、26・・・フンノやレータ。
Figure 1 shows a conventional semiconductor characteristic measuring device.
FIG. 2 is a block diagram showing an embodiment of the semiconductor characteristic measuring device according to the present invention. lO...handler, 11...transistor under test, 1
2... Sensor, 16... Noise detection circuit, 17... Analog comparator, 20... Poor contact detection circuit, 22...
- Handler interface, 23... Oscillator, 24
.. 27...p wave device, 25...AC/DC converter/eta, 26...funno and rater.

Claims (1)

【特許請求の範囲】[Claims] ハンドラの8111子を介して供試半導体素子の入力端
Km続され、この素子に所定庵波数の試験信号を供給す
る発振器と、同じくハンドラのIII子を介して得られ
る前記素子からの出力信号を試験信号成分および雑音信
号成分に分離するF波器と、このPt1L器により分離
され走線音信号のレベルを判定して前記素子の特性分類
を表わす分類16号を得る分類手段と、前記P波器によ
シ分離された試験信号のレベルを判定して前記素子のリ
ードと測子との接触状態の良否を検出する検出回路と、
この検出回路から接触良好出力が得られているときη前
記分類手段による分類信号に応じた信号を前記ハンドラ
へ送り、前記検出回路から接触不良出力か得られている
ときはハンドラへの分子s信号出力を禁止し、ハンドラ
へ接触不良信号倉出力するハンドラインターフェースと
を具備することを特徴とする半導体特性測定装置。
An oscillator is connected to the input terminal Km of the semiconductor device under test through the 8111 element of the handler and supplies a test signal of a predetermined wave number to this element, and an output signal from the element obtained via the 3rd element of the handler. an F-wave device that separates the signal into a test signal component and a noise signal component; a classification means that determines the level of the running sound signal separated by the Pt1L device to obtain classification No. 16 representing the characteristic classification of the element; a detection circuit that determines the level of the test signal separated by the device and detects whether the contact state between the lead of the element and the probe is good;
When a good contact output is obtained from this detection circuit, η a signal corresponding to the classification signal by the classification means is sent to the handler, and when a bad contact output is obtained from the detection circuit, a numerator s signal is sent to the handler. A semiconductor characteristic measuring device comprising: a handler interface that prohibits output and outputs a contact failure signal to a handler.
JP625482A 1982-01-19 1982-01-19 Semiconductor characteristics measuring apparatus Pending JPS58123472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP625482A JPS58123472A (en) 1982-01-19 1982-01-19 Semiconductor characteristics measuring apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP625482A JPS58123472A (en) 1982-01-19 1982-01-19 Semiconductor characteristics measuring apparatus

Publications (1)

Publication Number Publication Date
JPS58123472A true JPS58123472A (en) 1983-07-22

Family

ID=11633343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP625482A Pending JPS58123472A (en) 1982-01-19 1982-01-19 Semiconductor characteristics measuring apparatus

Country Status (1)

Country Link
JP (1) JPS58123472A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009115647A (en) * 2007-11-07 2009-05-28 Yokogawa Electric Corp Direct-current testing device and semiconductor testing device
US20130132007A1 (en) * 2011-11-08 2013-05-23 Pragma Design, Inc. Embedded transient scanning system apparatus and methodology
US10191109B2 (en) 2011-11-08 2019-01-29 Pragma Design, Inc. Embedded transient scanning systems, transient scanning data visualization systems, and/or related methods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009115647A (en) * 2007-11-07 2009-05-28 Yokogawa Electric Corp Direct-current testing device and semiconductor testing device
US20130132007A1 (en) * 2011-11-08 2013-05-23 Pragma Design, Inc. Embedded transient scanning system apparatus and methodology
US9297852B2 (en) * 2011-11-08 2016-03-29 Pragma Design, Inc. Embedded transient scanning system apparatus and methodology
US10191109B2 (en) 2011-11-08 2019-01-29 Pragma Design, Inc. Embedded transient scanning systems, transient scanning data visualization systems, and/or related methods

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