JPS58119200A - X-ray generating device - Google Patents

Abstract

PURPOSE:To provide an X-ray generating device which can increase the output of X-rays, and which enables a large area to be irradiated at a time. CONSTITUTION:Four penetrating holes 22a, 22b, 22c and 22d are provided in a polyethylene column 21 (insulator). The holes 22a-22d have a square section. Trigger electrodes 23a-23d are installed over the holes 22a-22d respectively. Electrodes 8 and 9 are prepared from a graphite. In addition, the electrostatic capacity of a capacitor 10 is adjusted to 100[muF], and the voltage of a high- voltage power source 11 is adjusted to 50[kV]. By using such an X-ray generating device, compared to the conventional one having one penetrating hole, the X-ray irradiation area can be extended almost to an area given by multiplying the conventional area by the number of the penetrating holes.

Description

[Detailed Description of the Invention] The present invention is directed to xll! We are looking into improving the Xls generator O used for II elements.

Technical Background of the Invention Recently, light, ultraviolet light, XII! Alternatively, various exposure methods using charged beams have been developed. In Nire et al., the X** element method is considered to be extremely effective for microfabrication of 1 [μm] or less because X-rays have a shorter wavelength than ultraviolet light and have a smaller diffraction effect.

FIG. 1 is a schematic diagram showing the principle of the XAG optical method. XII emitted from the X-ray generation source 1 (X-ray generation device) is transferred onto the X-ray resist 5 on the X-ray mask 2, the gold pattern 3Yt, and the silicon wafer 4. Usually, an electron beam excitation type is used for X-ray generation@1, which excites X@ by colliding an accelerated electron beam with a target, but in this case, the X-ray output is small and the transfer takes a long time. There is a drawback to it.

Therefore, recently, a tube-type discharge plasma X-ray source has been developed as a solution to the low output power of the X-source. This XI! Generation Source Expansion 2 As shown in Figure 2, for example, a polyethylene cylinder 70 having a narrow W (through hole) 6 with a diameter of 1 [μm], an amphoteric rInK electrode 8.9 [adhered, and between the electrodes 89] It is configured by connecting tlOf.

Then, at high voltage voltage lllll111; nde'/1lO1
- By charging and applying a trigger t using the trigger electrode 12, a creeping discharge tl! is generated along the inner wall of the through hole 6 of the polyethylene cylinder 7! This discharge generates plasma and radiates XII. KoOX@
The generation efficiency is more than two orders of magnitude higher than the conventional one (0), and the utility value as a high-output X-ray is high %/m%.

However, in such a discharge plasma
The drawback is that it cannot be irradiated at 11-1 degrees. for example,
If the zero distance between the polyethylene cylinder 7 and the silicon wafer 4 is 15 (usually 0), the x*o irradiation ray 83 [1] diameter is 3 [country] diameter, and the large diameter 0 quadrature is 1 degree. Kll light was ilm.

OBJECTS OF THE INVENTION An object of the present invention is to provide an XII generator that can increase the output of XII and irradiate a large area at once.

Summary of the Invention The present invention provides an electrode [
At the same time, there is a layer between these electrodes. ! -11
Next, in a capillary-type discharge plasma X-ray generation device that charges this capacitor and then triggers it to induce creeping discharge along the inner wall of the through hole to generate plasma, and causes X5t-radiation by this plasma, A plurality of the above-mentioned through holes are provided.

Effects of the Invention According to the present invention, XIl! Of course, the number of through holes is high, and the number of through holes is high. W & Ketoyo 5, XL
i! The irradiation box 8 can be increased to a large size. Therefore, when used in the X-ray I optical method, a large area wafer @:1
This provides effects such as being able to perform exposure at once and in a short time.

Example 1i4 Figure 3 is a book! 111 is a schematic diagram showing an X@exposure method using an X-ray generator according to an embodiment of No. 111. FIG.

Note that the same parts as in FIGS. 1 and 2 are given the same reference numerals, and explanations Wi4 that are less favorable are omitted. This embodiment differs from the xiin optical method shown in FIG. 2 in that only a few through holes 1w are provided in the insulator of the generation source.

That is, in a positive ethylene cylinder z1 (insulator) having a length of 2 [return], four through holes 11m, 11b, Ilc, 22d are formed at intervals of 3 [bacteria] as shown in the plan view of Fig. 4.
The eight through-holes 221 to 22d provided with the through holes 221 to 22d have a square cross-sectional shape, and the length of the - side is 1 [-].

Additionally, trigger electrodes XSS to 234 are provided above the through holes 221 to jffd, respectively. Note that the electrode 8
．． 9 is made of graphite +,t+,=rndenfl
IC) The capacitance is ZooCμ! ], and the voltage of the high voltage power supply 11 was set to 50 [Kma].

By using such & Become. For example, if the distance between the polyethylene cylinder 21 and the silicon wafer 5 is t-15 (ffi), then 6
A square area of 5 m) can be irradiated at once.

Note that the present invention is not limited to the embodiments described above. For example, the polyethylene CK may be used as long as it is an insulator. Further, the number of through holes provided in the insulator is not limited to 411 Kll, and may be changed as appropriate depending on the required X-ray irradiation area. Further, the shape of the through hole is not limited to a square, but may be rectangular, circular, or rostral, or any other shape depending on the purpose.

In addition, various modifications can be made without departing from the gist of the present invention.

[Brief explanation of drawings]

Figure 1 is a schematic diagram showing the principle of the conventional X-ray exposure method, and Figure 2 is a schematic diagram showing the principle of conventional X-ray exposure.
X-ray Shimamoto method 1) Schematic diagram of the xs! FIG. 4 is an exploded view showing the exposure method, and is a plan view of the apparatus of the above embodiment seen from above. 8.9... Electrode, 10.-; Densator, 11... High voltage electric -1j1... Polyethylene cylinder (insulator), xx
a-xxa-...through hole, 23a #jJd...) Riga electrode. Applicant's agent: Patent attorney Dosu Hiko 1 [3 marks, Figure 1, Figure 2]

Claims (1)

[Claims] (1) Amphibious I! An insulator having a plurality of through-holes formed therethrough, friend electrodes each attached to both main surfaces of the insulator, and W! between these electrodes. continued; with ndenna;
X,! characterized by comprising a high-voltage power supply connected to the capacitor and a trigger electrode provided on one main surface side of the front insulator corresponding to each of the through holes. 1 generator. The X-ray generator according to claim 1, wherein each of the through holes has a square cross-sectional shape.