JPS58115742A - Ion source unit in mass spectroscope equipment - Google Patents

Ion source unit in mass spectroscope equipment

Info

Publication number
JPS58115742A
JPS58115742A JP56211569A JP21156981A JPS58115742A JP S58115742 A JPS58115742 A JP S58115742A JP 56211569 A JP56211569 A JP 56211569A JP 21156981 A JP21156981 A JP 21156981A JP S58115742 A JPS58115742 A JP S58115742A
Authority
JP
Japan
Prior art keywords
ion
ion source
box
exit hole
source box
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56211569A
Other languages
Japanese (ja)
Other versions
JPS5910019B2 (en
Inventor
Atsushi Hosoi
淳 細井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP56211569A priority Critical patent/JPS5910019B2/en
Publication of JPS58115742A publication Critical patent/JPS58115742A/en
Publication of JPS5910019B2 publication Critical patent/JPS5910019B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns
    • H01J49/14Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers

Abstract

PURPOSE:To increase ion irradiation effect and improve detecting sensitivity by applying a voltage between both the front and rear ends of an ion source box and forming an electric field in the ion source box so as to accelerate an ion toward an exit hole. CONSTITUTION:An ion source box consists of stainless steel flanges 11 and 12 and a cylinder 10 with a conical hollow section 2, and several volts DC voltage is applied between both these flanges 11 and 12. The cylinder 10 is made of a semiconductor, constant current is applied thereon by voltage impression and a distribution of a equipotential surface indicated by dotted lines is obtained at the conical hollow section. A generated ion advances while converging in the direction vertical to the equipotential surface, i.e. toward an ion exit hole B due to this electric field. Besides, extraction effect can be improved by setting also the position of a thermo-filament 3 acting as an electronic source on the center axis.

Description

【発明の詳細な説明】 本発明は質量分析装置におけるイオン源装置に関し、イ
オン抽出効率を高めることを目的とするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion source device in a mass spectrometer, and aims to improve ion extraction efficiency.

化学イオン化(Chemical工0nijation
;C工と略称)はイオン源にメタン、イソブタン、アン
モニヤなどの試薬ガスを定常的に流し、イオン源内圧力
を約ITorrに維持しながら電子衝撃イオン化とイオ
ン分子反応によシ試薬ガス分子をイオン化して反応イオ
ンを生成させる。この状態で試料をイオン源に導入して
、反応イオンと試料分子間のイオン分子反応により試料
分子をイオン化するもので試料の分子量情報が得易い利
点を有しており、広く利用されている。
Chemical ionization
(abbreviated as C), a reagent gas such as methane, isobutane, ammonia, etc. is constantly flowed into the ion source, and the reagent gas molecules are ionized by electron impact ionization and ion molecule reaction while maintaining the pressure inside the ion source at approximately I Torr. to generate reactive ions. The sample is introduced into the ion source in this state, and the sample molecules are ionized by the ion-molecule reaction between the reactant ions and the sample molecules.This method has the advantage of easily obtaining information on the molecular weight of the sample, and is widely used.

第1図に従来例としての化学イオン化イオン源と分析部
の一部を含む、構成略図を示した。
FIG. 1 shows a schematic diagram of a conventional chemical ionization ion source and a part of an analysis section.

ガス供給パイプ1から試薬ガスをイオン源ボックス2へ
流し、ボックス内圧力を約I Torrに保つ。ボック
スには電子入射孔Aとイオン出射孔Bが設けられている
。電子入射孔Aの軸上のポックら放出される熱電子を数
10eVから数100 eVに加速してボックス内へ入
射させ試薬ガス分子をイオン化する。さらに生成イオン
と試薬ガス分子間のイオン分子反応により反応イオンが
生成する。
A reagent gas is flowed from the gas supply pipe 1 to the ion source box 2, and the pressure inside the box is maintained at about I Torr. The box is provided with an electron entrance hole A and an ion exit hole B. Thermionic electrons emitted from the pock on the axis of the electron entrance hole A are accelerated to several tens of eV to several hundreds of eV and are made to enter the box to ionize reagent gas molecules. Furthermore, reactive ions are generated by an ionic-molecule reaction between the generated ions and reagent gas molecules.

こ\に試料を導入−rると居応イオンと試料分子間のイ
オン分子反応により試料分子がイオン化される0 生成した試料イオンはイオン出射孔Bがら抽出され、隔
壁6に設けられている開口Cを通って分析部7へ入射さ
せる。4はイオン抽出電極25は収束レンズ電極である
When a sample is introduced here, the sample molecules are ionized due to the ion-molecule reaction between the reactive ions and the sample molecules.The generated sample ions are extracted from the ion exit hole B, and the sample molecules are ionized through the ion exit hole B. C and enters the analysis section 7. 4, the ion extraction electrode 25 is a converging lens electrode.

壁フィラメント3の実用寿命を確保するためイオン源ボ
ックス外部領域は10  Torrより良好な真空度に
する。分析部は良好な質量分離特性を得るために↓OT
orrより良好な真空度にする。
In order to ensure the practical life of the wall filament 3, the area outside the ion source box should have a vacuum better than 10 Torr. The analysis section is ↓OT to obtain good mass separation characteristics.
Make the degree of vacuum better than orr.

このためイオン源部と分析部は隔壁6によシ真空的に隔
離されており、それぞれ独立に真空ポンプ8および9で
排気されている。
For this reason, the ion source section and the analysis section are vacuum isolated by a partition wall 6, and are evacuated by vacuum pumps 8 and 9 independently.

イオン源ボックス内(〜I Torr )、外((10
−’Torr )の圧力差を維持するためイオン源ポッ
ク、スには高気密性が要求される。そのため電子入射孔
、イオン出射孔とも小孔とせざるを得ない。一般にイオ
ン源ボックスのコンダクタンスで1〜5’      
  xlo  t/F3程度が実用されている。
Inside the ion source box (~I Torr ), outside ((10
In order to maintain a pressure difference of -'Torr), the ion source is required to be highly airtight. Therefore, both the electron entrance hole and the ion exit hole have to be small holes. Generally, the conductance of the ion source box is 1 to 5'.
xlot t/F3 or so is in practical use.

イオン源ボックスが高気密性構造であるために次のよう
な問題がある。イオン出射孔の後にはイオン抽出電極が
設けられているが、この電極で作られる抽出電場のイオ
ン源ボックス内への滲透がイオン出射孔で制限されるた
め、生成イオンの抽出効率が低値に抑えられ質量分析装
置の感度制限因子の一つとなっていることである。また
、イオン源ボックス内圧がI Torrと高いので、数
10eV〜数100 eV電子によるイオン化は電子入
射孔近傍に限定されることも抽出効率の制限因子になっ
ている。
Since the ion source box has a highly airtight structure, there are the following problems. An ion extraction electrode is installed after the ion exit hole, but the ion exit hole restricts the penetration of the extraction electric field created by this electrode into the ion source box, resulting in a low extraction efficiency for generated ions. This is one of the limiting factors for the sensitivity of mass spectrometers. Furthermore, since the internal pressure of the ion source box is as high as I Torr, ionization by electrons of several tens of eV to several hundreds of eV is limited to the vicinity of the electron entrance hole, which is also a limiting factor for extraction efficiency.

本発明はこの問題を解決し、イオン抽出効率を改善する
ことによって高感度の質量分析装置を提供するものであ
る。即ちイオく源ボックスの前後両壁間に電圧を印加し
てボックス内に後壁から前壁中央に向ってイオン加速電
界を形成するようにして、ボックス内で生成されたイオ
ンをイオン出射孔へと押出すようにしたイオン源ボック
スを提る円筒10で構成されている。フランジ11,1
2はステンレススチールで作られ、この両フランジ間に
数■の直流電圧を印加する。円筒1oは半導体材料で作
られ、電圧印加により一定電流が流れ、円錐状中空領域
に図中点線で示した等電位面の分布が得られる。生成し
たイオンはこの電界により等電位面に垂直方向にすなわ
ちイオン出射孔Bに向って収束されながら進行する。す
なわちイオン源ボックス内のどの点で生成したイオンも
すべてイオン出射孔に集まシ、抽出されることになる。
The present invention solves this problem and provides a highly sensitive mass spectrometer by improving ion extraction efficiency. That is, a voltage is applied between the front and rear walls of the ion source box to form an ion accelerating electric field within the box from the rear wall to the center of the front wall, and the ions generated within the box are directed to the ion exit hole. It consists of a cylinder 10 holding an extruded ion source box. Flange 11,1
2 is made of stainless steel, and a DC voltage of several square meters is applied between both flanges. The cylinder 1o is made of a semiconductor material, and when a voltage is applied, a constant current flows, and an equipotential surface distribution shown by dotted lines in the figure is obtained in the conical hollow region. The generated ions travel in a direction perpendicular to the equipotential surface, that is, toward the ion exit hole B, while being focused by this electric field. In other words, all ions generated at any point within the ion source box gather at the ion exit hole and are extracted.

電子源としての熱フィラメント3の位置も中心軸上に設
けることによシ、抽出効率の向上を得ることができる。
By locating the hot filament 3 as an electron source on the central axis, extraction efficiency can be improved.

円筒10はガラス表面に半導体コーティングする。フェ
ライトを用いるなどの方法や連続ダイノード形電子増倍
管として実用されているチタン酸亜鉛セラミックやチタ
ン酸バリウムセラミックを用いることができる。特に3
00℃程度までの使用に対してはこの半導体セラミック
が優れている。
The cylinder 10 has a glass surface coated with a semiconductor. It is possible to use a method such as using ferrite, or to use zinc titanate ceramic or barium titanate ceramic, which are practically used as continuous dynode electron multiplier tubes. Especially 3
This semiconductor ceramic is excellent for use up to about 00°C.

フランジ11.12間に印加する直流電圧の極性を転換
することによシ正を負側イオンを取出すことも容易であ
る。本考案はCエイオン源に適用することが効果的であ
るが、電子衝撃イオン源にも同様に適用することができ
るので、電子衝撃イオン化、ケミカルイオン化両用イオ
ン源の構成にも利用できる。
It is also easy to extract positive and negative ions by switching the polarity of the DC voltage applied between the flanges 11 and 12. Although it is effective to apply the present invention to a C ion source, it can also be applied to an electron impact ion source, so it can also be used to configure an ion source for both electron impact ionization and chemical ionization.

第3図は本発明の他の実施例であって、イオン源ボック
スの周側壁10を絶縁体で形成し、前壁12及び後壁1
1を導体とし、かつ前壁12を後壁11よシ小面積とし
て、ボックス内の等電位面を同心球面に近い形にしたも
のである。なお後壁11を図示のように凹球面とするこ
とにより、よシ一層望ましい電界が形成される。その他
第2図の各部と対応する部分には同じ符号がつけである
FIG. 3 shows another embodiment of the present invention, in which the peripheral side wall 10 of the ion source box is formed of an insulator, and the front wall 12 and the rear wall 1 are
1 is a conductor, and the front wall 12 has a smaller area than the rear wall 11, so that the equipotential surface inside the box is shaped close to a concentric spherical surface. By making the rear wall 11 a concave spherical surface as shown, a more desirable electric field can be formed. Other parts corresponding to those in FIG. 2 are given the same reference numerals.

なおこの実施例でも側壁1oを高抵抗体で形成してもよ
い。
Note that in this embodiment as well, the side wall 1o may be formed of a high-resistance material.

本発明イオン源装置は上述したような構成でイオン源ボ
ックス内にイオンをイオン出射孔に向けて加速するよう
な電界を形成したのでイオン出射効果が高く、検出感度
が高められるのであシ、特に内部を外部より高ガス圧に
保つ必要上イオン出射孔も小さくせざるを得ないCエイ
オン源装置において効果の大きいものである。
The ion source device of the present invention has the above-described configuration and forms an electric field in the ion source box that accelerates ions toward the ion exit hole, so the ion exit effect is high and the detection sensitivity is increased. This is highly effective in a C ion source device in which the ion exit hole must be made smaller because it is necessary to maintain a higher gas pressure inside than the outside.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の縦断面略図、第2図及び第3図は夫々
未発明の異る実施例の縦断側面図である。 10・・・イオン源ボックスの周側壁、11・・・イオ
ン源ボックスの後壁をなすフランジ、12・・・イオン
源ボックスの前壁をなすフランジ、A・・・電子入射孔
、B・・・イオン出射孔、3・・・フィラメント。 代理人 弁理士  係   浩  介
FIG. 1 is a schematic longitudinal sectional view of a conventional example, and FIGS. 2 and 3 are longitudinal sectional side views of different embodiments that have not yet been invented. DESCRIPTION OF SYMBOLS 10... Circumferential side wall of the ion source box, 11... Flange forming the rear wall of the ion source box, 12... Flange forming the front wall of the ion source box, A... Electron incidence hole, B... - Ion exit hole, 3... filament. Agent Patent Attorney Kosuke

Claims (2)

【特許請求の範囲】[Claims] (1)イオン源ボックスの周側壁を電気抵抗体或は絶縁
体で形成し、同ポ′ツクスの前壁と後壁との間に電圧を
印加し、同ボックス内にイオン出射孔に向うイオン収束
電界を形成したことを特徴とする質量分析装置における
イオン源。
(1) The peripheral side wall of the ion source box is made of an electrical resistor or an insulator, and a voltage is applied between the front wall and the rear wall of the box, and ions directed toward the ion exit hole are generated inside the box. An ion source in a mass spectrometer characterized by forming a focused electric field.
(2)電子入射孔をイオン源ボックス後壁においてイオ
ン出射孔と同一軸上に設けた特許請求の範囲第1項記載
の質量分析装置におけるイオン源装置。
(2) An ion source device in a mass spectrometer according to claim 1, wherein the electron entrance hole is provided on the same axis as the ion exit hole in the rear wall of the ion source box.
JP56211569A 1981-12-29 1981-12-29 Ion source device in mass spectrometer Expired JPS5910019B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56211569A JPS5910019B2 (en) 1981-12-29 1981-12-29 Ion source device in mass spectrometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56211569A JPS5910019B2 (en) 1981-12-29 1981-12-29 Ion source device in mass spectrometer

Publications (2)

Publication Number Publication Date
JPS58115742A true JPS58115742A (en) 1983-07-09
JPS5910019B2 JPS5910019B2 (en) 1984-03-06

Family

ID=16607949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56211569A Expired JPS5910019B2 (en) 1981-12-29 1981-12-29 Ion source device in mass spectrometer

Country Status (1)

Country Link
JP (1) JPS5910019B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172651A (en) * 1986-01-23 1987-07-29 Shimadzu Corp Ion source

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60159326U (en) * 1984-03-31 1985-10-23 株式会社 土屋製作所 Oil amount detection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172651A (en) * 1986-01-23 1987-07-29 Shimadzu Corp Ion source

Also Published As

Publication number Publication date
JPS5910019B2 (en) 1984-03-06

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