JPS58110003A - Thin film thermistor element and method of producing same - Google Patents

Thin film thermistor element and method of producing same

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Publication number
JPS58110003A
JPS58110003A JP21379381A JP21379381A JPS58110003A JP S58110003 A JPS58110003 A JP S58110003A JP 21379381 A JP21379381 A JP 21379381A JP 21379381 A JP21379381 A JP 21379381A JP S58110003 A JPS58110003 A JP S58110003A
Authority
JP
Japan
Prior art keywords
thin film
thermistor
thermistor element
film thermistor
producing same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21379381A
Other languages
Japanese (ja)
Inventor
玉井 孝
大島 信正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21379381A priority Critical patent/JPS58110003A/en
Publication of JPS58110003A publication Critical patent/JPS58110003A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、サーミスタ感熱部とそれを支持する絶縁体と
が一体化し、熱応答性が極めて良好で、しかも振動、衝
撃に対し断線の恐れのないサーミスタ素子とその量産に
適した製造方法を提供することを目的とする。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a thermistor element in which a thermistor heat-sensitive part and an insulator that supports it are integrated, has extremely good thermal response, and has no risk of disconnection due to vibration or shock, and its mass production. The purpose is to provide a manufacturing method suitable for

従来%1[1図6)のようなサーミスタ素子がある。Conventionally, there is a thermistor element such as %1 [1 Figure 6].

これはアルミナ基板(1)上にサーミスタ(2)と電極
(3)とを薄膜状に形成し、!IE 極(3)からは細
い金属IJ −ド線(4)を溶接にて接続し、裏面部全
体をガラス(5)で被覆して構成されている。従って、
この構成で熱応答性の極めて優れたサーミスタ素子を提
供しようとする場合には、次のような欠点を有する。
This is done by forming a thermistor (2) and an electrode (3) in a thin film form on an alumina substrate (1). A thin metal IJ wire (4) is connected to the IE pole (3) by welding, and the entire back surface is covered with glass (5). Therefore,
When attempting to provide a thermistor element with extremely excellent thermal response using this configuration, the following drawbacks arise.

■熱応答性を良くするため形状をできるだけ小さくしよ
うとしても、リーξ線(4)の保持部が必要なために限
界があシ、しかもサーミスタ素子の体積に対する感熱部
の表面積の比、即ち比表面積に限界があるため、熱時定
数がミリセカンド(msec)オーダー(静止空気中)
の熱応答性の優れたサーミスタ素子を提供するには限界
がある。    ・ ■リード線(4)とサーミスタの電極(3)とは溶接に
よシ接続し“てい・るが、引張強度が低く、これを表面
のガラス(5)の被覆によシ補強しているが、ガラス(
5)の被覆を行うことによシ熱応答f性を更に悪くして
いる。
■Even if we try to make the shape as small as possible in order to improve thermal response, there is a limit due to the need for a holding part for the Lee ξ wire (4).Moreover, the ratio of the surface area of the heat sensitive part to the volume of the thermistor element, that is, the ratio Due to the limited surface area, the thermal time constant is on the order of milliseconds (msec) (in still air)
However, there are limits to providing a thermistor element with excellent thermal response.・ ■The lead wire (4) and the thermistor electrode (3) are connected by welding, but the tensile strength is low, so this is reinforced by the glass (5) coating on the surface. However, the glass (
By applying the coating 5), the thermal response properties are further deteriorated.

■サーミスタのリード線(4)としては、熱応答性をよ
くするために1本体の形状を小さくするには限界がある
ため、できるだけ径の細い(例えば−0,151@)金
属線を使用することになるが、この場合には使用条件下
の振動、衝撃等に対し、リード線が断線する恐れがあシ
信頼性面で不十分である。
■For the lead wire (4) of the thermistor, use a metal wire with as small a diameter as possible (e.g. -0,151@), as there is a limit to reducing the size of the main body to improve thermal response. However, in this case, there is a risk that the lead wires will break due to vibrations, shocks, etc. under the usage conditions, resulting in insufficient reliability.

又、第1図ら)に示す如く、サーミスタ素体(6)と非
常に細い金属線(pt線〕(7)とを一体焼結したビー
ド形サーミスタ素子があるが、これも同様にリード線が
極めて細い(例えばpt線径が60μ)ため。
In addition, as shown in Figure 1, etc., there is a bead-shaped thermistor element in which a thermistor body (6) and a very thin metal wire (PT wire) (7) are integrally sintered, but this also has a lead wire. Because it is extremely thin (for example, the PT wire diameter is 60μ).

振動9.衝撃に対しリード線が断線する恐れがあシ信頼
性面で不十分である。
Vibration9. There is a risk that the lead wire may break due to impact, and reliability is insufficient.

そこで本発明は、FltA′の金属導体表面に薄膜状の
サーミスタを設け、このサーミスタ上に薄膜状1極を設
けることによって、熱応答性が良好でしかも振動、衝撃
に対して断線の恐れのないものを実現すると共に、その
製造を、連続した線状金属体の表面にその長手方向に沿
って複数個分のサーミスタ材料を薄膜状に形成し1次い
で前記サーミスタ材料表面上に前記複数個分の薄膜状電
極を形成し、その後サーミスタ材料と電極とが形成さノ
またこの線状金属体を複数に切断して個々の薄膜サーミ
スタ材料とすることによって量産を可能にしたものであ
って、以下本発明の実施例を第2図〜114図に基づい
て説明する。
Therefore, in the present invention, a thin film thermistor is provided on the surface of the metal conductor of FltA', and a single thin film pole is provided on the thermistor, so that the thermal response is good and there is no risk of disconnection due to vibration or impact. At the same time, the manufacturing process is carried out by forming a plurality of pieces of thermistor material in a thin film form along the longitudinal direction on the surface of a continuous linear metal body. This method enables mass production by forming a thin film electrode, then forming the thermistor material and electrode, and cutting this linear metal body into multiple pieces to obtain individual thin film thermistor materials. Embodiments of the invention will be described based on FIGS. 2 to 114.

118図は完成した薄膜サーミスタ素子の断面図。Figure 118 is a cross-sectional view of the completed thin film thermistor element.

IN4図はその製造過程の断面図を示す。(8)は振動
Figure IN4 shows a cross-sectional view of the manufacturing process. (8) is vibration.

の表面を包むよう形成された薄膜状のサーミスタ。A thin film thermistor formed to wrap around the surface of.

鱒はサーミスタ(9)の上に形成された薄膜状の電極で
ある。
The trout is a thin film electrode formed on the thermistor (9).

製造に際しては、連続した線状金属体0pの表面にその
長手方向に沿って一定f!fl r#Slで所定長さし
のサーミスタ(・)を形成し、次いでサーミスタ(9)
上にそれぞれ電藺會降忰αQを形成しその後に切断線■
でこの線状絶縁体Oρを切しrして個々の薄膜サーミス
タ素子に分割される。
During manufacturing, a constant f! is applied to the surface of a continuous linear metal body 0p along its longitudinal direction. Form a thermistor (・) of a predetermined length with fl r#Sl, then the thermistor (9)
Form an electric wire αQ on top of each other, and then draw a cutting line■
Then, this linear insulator Oρ is cut and divided into individual thin film thermistor elements.

このように構成したため、線状金属導体(8)として直
径が11111以下の細いものを用いてサーミスタ素子
の仕上り形状の外径を1調以下の大きさとした場合であ
っても諸条件を満足したものが得られる。
With this configuration, even if a thin wire metal conductor (8) with a diameter of 11,111 mm or less is used and the outer diameter of the finished shape of the thermistor element is set to one tone or less, the various conditions can be satisfied. You can get something.

上記実施例では、サーミスタ(9)上に前記線状金属導
体(8)に対向する1つの電極a・を形成したが。
In the above embodiment, one electrode a was formed on the thermistor (9), facing the linear metal conductor (8).

これは@8図に示すように離散的に複数個の電極0O(
2)・・−を設けた場合も同様に実施可能である。
As shown in Figure @8, this is done by discretely connecting multiple electrodes 0O(
2) It is also possible to implement the same method when - is provided.

以上説明のように本発明の薄膜サーミスタ素子およびそ
の製造方法によると、次のような効果を奏する。中金属
導体として細い径のものを使用することができるため、
外径の細い線状のサーミスタ素子を形成することができ
る。しかも感熱部としてのサーミスタを表面に広く薄膜
状に形成しているため比表面積が大きくなり、熱伝導率
の良い金属体がベースとなっているので、放熱係数が大
きく熱応答性の極めて優れたサーミスタ素子を提供する
ことができるL  (li)サーミスタ感熱部とそれを
支持する線状金属導体とを一体化できるため。
As described above, the thin film thermistor element and the method for manufacturing the same according to the present invention have the following effects. Because it is possible to use a thin diameter conductor as a medium metal conductor,
A linear thermistor element with a thin outer diameter can be formed. Moreover, since the thermistor as a heat-sensitive part is formed in a thin film over a wide area on the surface, the specific surface area is large, and since it is based on a metal body with good thermal conductivity, it has a large heat dissipation coefficient and extremely excellent thermal response. Thermistor element can be provided L (li) Because the thermistor heat sensitive part and the linear metal conductor supporting it can be integrated.

両端の電極部で支持すれば、振動、崗iに対し断線の恐
れのない高応答性サーミスタ素子を提供できる。 (I
D電極はサーミスタ感熱部表面に任意の長さで形成でき
るので、抵抗値の調整も容易にでき、量産効果は極めて
高い。eV)連続した線状金属導体を用いて、連続して
多数個同時に作製することがで一1量産効果は高く、安
価に提供することがで偽る。
By supporting the electrode portions at both ends, it is possible to provide a high-responsive thermistor element with no fear of disconnection due to vibration or stress. (I
Since the D electrode can be formed to any length on the surface of the thermistor's heat-sensitive part, the resistance value can be easily adjusted, and the mass production effect is extremely high. eV) By using a continuous linear metal conductor and simultaneously producing a large number of them in succession, the mass production effect is high and it can be provided at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

Ii1図ω(b)は従来の薄膜サーミスタ素子の断面図
とビード形サーミスタ素子の説明図、第2図は本発明の
薄膜サーミスタ素子の一実施例の縦断i図%箇$図は他
の、実施例の縦断面図、第4陸は第2図薄膜?−Eスタ
素子の製造過程の縦断面図である。 (2)−線状金属導体、(9)・・・サーミスタ、αQ
・・・電極、0一連続°した線状金属導体、に)・・・
切断線代理人 森本義弘  □
Ii1 Figure ω(b) is a cross-sectional view of a conventional thin film thermistor element and an explanatory diagram of a bead-type thermistor element, Figure 2 is a vertical cross-sectional view of an embodiment of the thin film thermistor element of the present invention; Vertical sectional view of the example, is the 4th land a thin film in the 2nd figure? - It is a longitudinal cross-sectional view of the manufacturing process of the E star element. (2) - Linear metal conductor, (9)... thermistor, αQ
...electrode, a linear metal conductor with continuous 0-1 degrees)...
Cutting line agent Yoshihiro Morimoto □

Claims (1)

【特許請求の範囲】 1、 線状の金属導体表面に薄膜状のサーミスタを設け
、このサーミスタ上に薄膜状電極を設けた薄膜サーミス
タ素子。 2 線状の金属導体を、直径11118以下のものを用
いた特許請求の範囲第1項記載の薄膜サーミスタ材料。 & 連続した線状金属体の表面にその長手方向に沿って
複数個分のサーミスタ材料を薄膜状に形成し、次いでこ
のサーミスタ感熱部に前記複数個分の薄膜状電極を形成
し、その後す子の製造方法。
[Claims] 1. A thin film thermistor element in which a thin film thermistor is provided on the surface of a linear metal conductor, and a thin film electrode is provided on the thermistor. 2. The thin film thermistor material according to claim 1, which uses a linear metal conductor having a diameter of 11,118 mm or less. & Form a plurality of thermistor materials in the form of a thin film along the longitudinal direction on the surface of a continuous linear metal body, then form the plurality of thin film electrodes on the heat-sensitive portion of the thermistor, and then manufacturing method.
JP21379381A 1981-12-23 1981-12-23 Thin film thermistor element and method of producing same Pending JPS58110003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21379381A JPS58110003A (en) 1981-12-23 1981-12-23 Thin film thermistor element and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21379381A JPS58110003A (en) 1981-12-23 1981-12-23 Thin film thermistor element and method of producing same

Publications (1)

Publication Number Publication Date
JPS58110003A true JPS58110003A (en) 1983-06-30

Family

ID=16645137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21379381A Pending JPS58110003A (en) 1981-12-23 1981-12-23 Thin film thermistor element and method of producing same

Country Status (1)

Country Link
JP (1) JPS58110003A (en)

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