JPS58106964U - External cavity type semiconductor laser - Google Patents

External cavity type semiconductor laser

Info

Publication number
JPS58106964U
JPS58106964U JP307982U JP307982U JPS58106964U JP S58106964 U JPS58106964 U JP S58106964U JP 307982 U JP307982 U JP 307982U JP 307982 U JP307982 U JP 307982U JP S58106964 U JPS58106964 U JP S58106964U
Authority
JP
Japan
Prior art keywords
semiconductor laser
type semiconductor
external cavity
cavity type
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP307982U
Other languages
Japanese (ja)
Other versions
JPH0225241Y2 (en
Inventor
岸田 俊二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP307982U priority Critical patent/JPS58106964U/en
Publication of JPS58106964U publication Critical patent/JPS58106964U/en
Application granted granted Critical
Publication of JPH0225241Y2 publication Critical patent/JPH0225241Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

−第、1図tよ直線偏光保存ファイバの断面薗で、1は
、コア、2はフラツドを示し、!−’Vは偏享の主゛軸
方向を示す。第2図は本考案の実施例の構成図で、″1
0は半導体レーザ素子、11は半導体レ.ーザ素子の活
性層、12は光結合用レンズ、−13は、直線偏光保存
ファイ.バ、14.15は直線偏光保存ファイバの端面
,Xは半導体レーザからの出射光の偏米方向、YはXの
方向とは直交する方向を示す。・
- Figure 1 t shows the cross section of the linear polarization maintaining fiber, where 1 indicates the core and 2 indicates the flat. -'V indicates the direction of the main axis of paralysis. Figure 2 is a configuration diagram of an embodiment of the present invention,
0 is a semiconductor laser element, 11 is a semiconductor laser element. 12 is an optical coupling lens, -13 is a linear polarization preserving fiber. 14 and 15 are the end faces of the linear polarization maintaining fiber, X is the polarization direction of the light emitted from the semiconductor laser, and Y is the direction perpendicular to the X direction.・

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電流琲入型半導体レーザ青子と波長選択素子と光帰遼素
子と.−を含む外部共振器型狭帯域化半導体レー枦にお
いて、電流.注入型半導体レーザー子と光結合用レンズ
と所用波畢番4お砂?るビー.ト長の弊数倍の長さの直
線偏光葆存ラアイレくとを有誓る゛外部共塀一を備え、
前記直線偏光保有ファイバの端面上iと前記光結合用レ
ン女で集光された前記電流注入型半導体レーザ素子から
の出射光の偏光方向と前記直線偏米保存ファイバの偏光
主軸の方轡と′が異なφ方向をなすよう二に前記直線偏
光保存ファイバを配置したことを特徴とする外部恭振器
型半導体レーザ。′
Current injection type semiconductor laser blue light, wavelength selection element, and optical return element. - In an external cavity type narrowband semiconductor relay including a current . Injection type semiconductor laser element, optical coupling lens, and required wave number 4 sand? Ruby. Equipped with an external common wall that has a linear polarized light beam several times the length of the
i on the end face of the linearly polarized fiber, the polarization direction of the light emitted from the current injection semiconductor laser element focused by the optical coupling lens, and the direction of the principal axis of polarization of the linearly polarized fiber; 1. An external resonator type semiconductor laser, characterized in that the linear polarization maintaining fibers are arranged in two directions so that the φ directions are different from each other. ′
JP307982U 1982-01-13 1982-01-13 External cavity type semiconductor laser Granted JPS58106964U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP307982U JPS58106964U (en) 1982-01-13 1982-01-13 External cavity type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP307982U JPS58106964U (en) 1982-01-13 1982-01-13 External cavity type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS58106964U true JPS58106964U (en) 1983-07-21
JPH0225241Y2 JPH0225241Y2 (en) 1990-07-11

Family

ID=30016029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP307982U Granted JPS58106964U (en) 1982-01-13 1982-01-13 External cavity type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS58106964U (en)

Also Published As

Publication number Publication date
JPH0225241Y2 (en) 1990-07-11

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