JPS58106883A - Manufacture of composite substrate - Google Patents

Abstract

PURPOSE:To obtain electron mobility equal to a bulk material by a method wherein a soft magnetic material substrate is formed in size larger than a semiconductor material wafer, the wafer is fixed, the outer circumference of the substrate is coated with a height gage consisting of a hard ceramic material and the upper surface of the gage is mechano-chemical-polished while being used as a reference surface. CONSTITUTION:Mechano-chemical polishing is executed onto one surface of the Nn-Zn ferrite substrate 1, and the polished surface P1 is coated with an insulating thin-film layer 2 made of Al2O3, etc. Mechano-chemical polishing is executed onto the surface of the semiconductor material wafer 3, which is made of InSb and size thereof is smaller than the ferrite substrate 1, and the polished surface P2 is joined with the surface of the insulating thin-film layer 2 by using an adhesive material 4. The ring-shaped height gage 5 composed of the hard ceramic material made of Al2O3, etc. is attached to the cicumferential section 10 of the outer end of the ferrite substrate 1. The gage is attached in consideration of the thickness of the insylating layer 2, the thickness of the adhesive material 4, the thickness of the wafer and the finishing thickness size of the substrate at that time. The wafer 3 is processed while using the upper surface of the gage as a reference, and a polished surface P3 is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention manufactures a composite substrate used in the manufacture of Hall elements by maintaining the surfaces of a magnetic material substrate and a semiconductor material wafer in an almost completely formed state by mechanical polishing. The present invention relates to a method for manufacturing a composite substrate in which the final precision finishing of a semiconductor material wafer is efficiently and precisely performed by mechanochemical polishing.

In general, there is a manufacturing method called the so-called bulk method as a manufacturing method for Hall elements, in which a wafer of an intermetallic compound semiconductor material such as In5be GIIAI is bonded onto a predetermined soft magnetic material substrate, and this semiconductor material urchin and bar are bonded to a predetermined soft magnetic material substrate. This manufacturing method uses a composite bulk substrate processed by mechanical or chemical polishing to a thickness of .

At this time, since the surface of the magnetic material substrate is polished with diamond powder or other abrasive grains, a processed fluidized layer, a deformed altered layer, or a stress residual layer is present on the surface layer, and in the process after polishing, the above-mentioned It is adversely affected by stress and strain. Further, in the case of semiconductor material wafers, there is a similar adverse effect; for example, the electron mobility of the IflSb film is lower than the bulk material characteristics, making it impossible to obtain a sufficient SA ratio.

Therefore, this invention uses ultra-precise mechanochemical boria to prevent the formation of a degraded layer on the surface layer of the substrate. After finishing the surface of the semiconductor material, the wafer surface is sequentially coated with mechanochemical poly-V in the same way.
Each surface is maintained in an almost perfect crystalline state, resulting in high electron mobility.

Mechanochemical 4S V sink here means Sin,
, MgO, etc. particle size 0.001-0.0
Using a solution in which ultrafine powder of 5μ cod was suspended in pure water,
This is a method of processing workpiece materials using a submerged lapping method.

In other words, a suspension of ultra-fine powder in pure water at a predetermined ratio is stored in a spring container, for example, a disk-shaped wrap is rotated, and the workpiece is placed facing the wrap in the liquid and relatively It is rotated and processed in liquid.

The wrapping material and the wrapping speed may be appropriately selected depending on the ultrafine powder, particle size, grain size, material to be processed, etc., and the amount of suspension in pure water is preferably 0.5 to 20 ft%.

IflSb, GaA adhered to the magnetic material substrate with
The semiconductor material wafer, such as l, has a predetermined thickness, for example, 2±1μ.
- It is necessary to process it up to -. When the chamfering is performed using the mechanochemical bridging described above, it is necessary to use a special jig, which causes problems in processing efficiency. Therefore, in consideration of processing efficiency, it is possible to apply mechanochemical polishing to 10±5 μm and then chemical etching to 1 μm of sardine, but this is not preferable because the processing steps increase.

Additionally, if mechanical polishing is performed without using a special jig during final finishing, variations in thickness tend to occur (and it is difficult to obtain high flatness).

Therefore, in the method of the present invention, in the manufacturing method for obtaining the above-mentioned composite substrate, the size of the soft magnetic material substrate is larger than that of the intermetallic compound semiconductor material wafer, and after the above-mentioned wafer is fixed, the outer periphery of the substrate is Hard Cera tI on the margins
The semiconductor material wafer is finished efficiently and with high precision by attaching a height gauge made of fluorine material and ultra-precisely processing the semiconductor material wafer using mechanochemical polishing using the upper surface of the height gauge as a reference surface. In other words, the above method allows precision machining up to 2±0.5μ.

Next, for the soft magnetic material substrate, Mn-Znn fuchii),
Soft ferrites such as N1-Zfi ferrite can be used, but for example, Mn-Zn ferrite has a specific electrical resistance of several hundred = -, so for example IflSb
1lIK: Requires an insulating thin film layer to be bonded to the semiconductor material wafer through a conductive solder layer. On the other hand, %N
1-Zll ferrite has a specific electrical resistance of I
Since the solder layer is conductive, it is not necessary to provide an insulating thin film layer on the other side of the semiconductor material. be. These insulating thin film layers include him 0-1810m
, 5i-N4, or the like can be used.

Note that the solder layer material has a liquidus line of 111
It is necessary to select a material that does not exceed the brittleness and lid transition temperature of 8b% oats, and the composition is PB in weight%.
Word S11 Error 4B: It is preferable to have a composition of 55 to 90:10.

Iamb% GIAI is suitable for intermetallic compound semiconductor material wafers because it provides excellent electron mobility, and single crystal is desirable to obtain excellent properties, but even polycrystalline wafers are suitable. An excellent product can be obtained from the composite substrate invented by Party B.

The method for manufacturing a composite substrate according to the present invention will be described below with reference to the drawings.

Figure 1 is a process diagram for bonding a substrate and a semiconductor material wafer with an adhesive, and Figure 2 is a process diagram for bonding a substrate and a semiconductor material wafer with a solder layer for welding applied to each. 8 sheets, showing the case of heat and pressure bonding.

First, explanation will be given from FIG. A ferrite substrate (11 and its -
The image is mechanochemically applied to the image (Figure a),
This 49191 page (Pi)tcAIgoms810m
-5i-Insulating thin film layer of oxide such as Na (Rose) from 300~
It is deposited to a thickness of 500A by spafter or vapor deposition (Figure b).

Next, for example, tfisb is added to the intermetallic compound semiconductor material.

Using QIAl, etc., mechanoke [Cal-
The poly V astragalus is shown in Figure 0), and its bridge 1 side (R
) is bonded to the surface of the insulating thin film layer (1) of the ferrite substrate (1) using an adhesive (4) (Figure d).

Next, a substrate (1
), for example, if a disk-shaped substrate or a semiconductor material wafer is used, the outer circumferential portion (toward) of the ferrite substrate (1) is coated with Aj dew 0@, etc. A ring-shaped height gauge IIl made of hard ceramic material is deposited by vacuum evaporation or reactive evaporation (Fig. 0). Material (4) layer thickness, semiconductor material wafer (3) thickness, thickness of substrate (1)
) coated on top.

Next, using the top surface of the height gauge ξ (11) as a reference, the semiconductor material 8-(
3) is processed and poly-V machining is performed using a technical college gauge f1) to obtain the final polishing (P-) (Figure f).

The composite substrate obtained through the above process is mechanochemically bored IJ with a final finishing accuracy of ±05 #111 or less, so it has extremely excellent properties 61, and has perfect surface crystallinity and I< Electron mobility equivalent to that of aluminum materials can be obtained.

In addition, since the height gauge also uses hard ceramic material,
The dimensional accuracy of the height gauge itself is unlikely to fluctuate when polishing is applied and other processes such as lapping are applied. It is also good to apply a thin film on the top surface of the height gauge to improve wear resistance.
It is preferable to use materials such as nitride of TIN, carbide of Tie sWC%Sl(:).

Next, explanation will be given based on FIG. 2.

M for soft magnetic materials! A disk-shaped ferrite substrate 11) is made of l-Zn ferrite, and its -face layer ζ is subjected to mechanical electropolishing (Fig. 1), and this polyvLIah face (P, ) is coated with kbO-, etc. An insulating thin film layer (illustration) of oxide is deposited with a thickness of 300 to 500A by sintering or vapor deposition (Figure b). Example If To: Sn
m45-10! 51S ~10(7) composition as X/
f vter -1 is deposited by vapor deposition, for example 5oo
Let it be a /X layer (・) with a thickness of A (Figure 0).

Next, using 1 flSb as an intermetallic compound semiconductor material,
Mechanochemical polishing is applied to one side of the semiconductor wafer λ-1m1, which has a disk shape with a smaller diameter than the substrate (1) (Fig. d), and the semiconductor material wafer 1/N-+$1 ) An insulating thin film layer ()) of oxide such as khOl is coated on the surface (P8) with a thickness of 300 to 3000 mm.
Deposited by ivy or vapor deposition (Figure 0). Continued tl'
% Apply 7X solder material for welding on the insulating layer (Ma) of the lever in the same way as above, and make 11x solder material with SOOλ thickness (1 m1).
(Figure f).

Then, the ferrite substrate +1) and the semiconductor material Ueno1-
For example, -f
230~2! ! The two are bonded together by heating and pressure bonding at 0'011 degrees (Figure g).

Next, the outer circumference Oα which is the margin of the ferrite substrate (1)
What are the thickness and finished dimensions of the semiconductor material wafer (3) and the insulating thin film layer 1? > Thickness of Ill, solder layer (@l+81
A ring-shaped height gauge (-) made of hard ceramic such as M, O, etc. is deposited by vacuum evaporation or reactive evaporation, taking into consideration the thickness of the mechanochemical・Process the semiconductor material wafer (3) by polishing and polish it to the height of the height gauge (9) for final polishing (P-) (
h figure).

In the composite substrate obtained through the process shown in Fig. 2 above, the ferrite substrate (1) and the semiconductor material wafer (3) are welded together with the solder layer deposited on each, so in the case of the above example, The adhesive layer is thin, uniform, and has stable strength of 0.17111, and the flatness of the semiconductor material wafer II) is improved, and the final finishing accuracy is mechanochemically polished to ±0.5# group. Therefore, extremely excellent properties can be obtained, with perfect surface crystallinity and electron mobility equivalent to that of bulk materials.

Examples according to the present invention will be described below.

Implementation conditions (support) Substrate (1) - High-grade Mn-Zn ferrite 3
5φ x 3mm shape, (b) Insulating layer (wound (yl
Vapor deposited to 0λ thickness, Q → solder layer + @1lI) --50
Sputtering to a thickness of 0λ, layer composition--Pb: Sn iris 62: 3g Subacitor conditions--1.Power + 100W/4"φAr pressure 13~6
X10-"torr Inter-electrode distance +35m Sample temperature + R, T ~ 50℃ Gauge y) + Pb: 811, depth 50:50, )
Mechanochemical・It 17 w Sing...-Pure water, one liquid, one particle size button ■μ book, Slα, 0.5~2OWt Paper wrap Moderate -40~6oI11/m1n Processing time...
15-3Qmln.

(to) Adhesive material +41...Low viscosity wood-based bond,
3000λ thickness, (0 solder layer 1@ill welding) - Using a jig in a constant temperature furnace, heat pressure welding with a piston method at a pressure of 300 f/ctl, and at a temperature of 240°C or higher. A ``composite substrate'' was produced using two manufacturing methods according to the invention, and a ring-shaped height gauge of 2 to 3 W width 1 liter was attached to the outer circumference of the ferrite substrate + 11 (11).
When the solder layer is vacuum-deposited and the adhesive (4) is used for bonding (Figures 1 and 0), the height of the height gauge (6) is 2.4μ, and the solder layer is (@l, (When welding @1 (second diagram), the height gauge (9) is 2
．． A layer height of 3 m was deposited.

(Height gauge 1et) (After applying Ill, the final finishing was performed by mechanochemical polishing. In the case of the manufacturing method using the adhesive (4), the thickness of the semiconductor material 114 wafer (3) was 2± Finishing was completed with an accuracy of 0.5μ.In addition, in the case of the manufacturing method using solder layers +6+ and '+11, the finishing was completed with an accuracy of 2±0.4μ. Moreover, the surface maintains perfect crystallinity, and the surface roughness is ±2.
0λ, and an electron mobility equivalent to that of the bulk material was obtained.

[Brief explanation of the drawing]

1 and 2 are process diagrams explaining the method for manufacturing a composite substrate according to the present invention. This is a case where solder material is used. In the figure: 1 - substrate, 2, 7 - insulating layer 1 [JLI - to semiconductor material - 14 - adhesive, 5.9 - height gauge, 6.
8-Solder layer, P,, Pt, P, -49191 plane, l〇-outer circumference. Applicant Sony Corporation Sumitomo Special Metals Co., Ltd. 1 Agent 1) Ryo Figure 1 (α) = Bath] + (b) 222 〒 (C) Ra “Go 3”

Claims (1)

[Claims] l An insulating thin film layer is deposited as necessary on the surface of a soft magnetic material substrate which has been subjected to ultra-precision finishing by mechanochemical bridging, and then a metal open compound semiconductor material wafer having dimensions smaller than the above substrate size is formed. A single stroke is given an ultra-precision finish by mechanochemical polishing, and the insulating thin film layer is adhered to the surface of the soft magnetic material substrate, and a hard ceramic is applied to the outer peripheral margin of the substrate to which the semiconductor material wafer is adhered. A method for manufacturing a composite substrate, in which a height gauge made of electrical material is adhered, and the other surface of the semiconductor material wafer is subjected to ultra-precision finishing using a mechanochemical V-sink using the upper surface of the height gauge as a reference surface. 2. Method for manufacturing a composite substrate as described in Claim I21, Paragraph 1, in which a wear-resistant thin film of oxide, electrification, carbide, etc. is applied to the upper surface of a height gauge made of hard ceramic electrical material. . 3 Mechanoke [Cover the surface of the soft magnetic material substrate, which has been given an ultra-fine finish by Cal polishing, with a thin film around the edges of the paper part if necessary, and then apply a solder material for welding on top of it, and then apply the above-mentioned substrate. Ultra-precision finishing is performed on one side of a small intermetallic compound semiconductor material wafer using Mechanochem Rikikei #Kiri V-singing, an insulating thin film is applied on that surface, and then a welding solder material of the same quality as above is applied. Then, the substrate and the semiconductor material wafer are welded together on their surfaces to which solder is applied, and a height gauge made of a hard ceramic material is adhered to the outer peripheral margin of the substrate after welding, and the semiconductor material is The other side of the wafer is given a fine finish using a mechanochemical polishing method using the top of the height gauge as a reference surface.
A method for manufacturing a composite substrate. 4. A composite substrate according to claim SRS, in which a wear-resistant thin film of oxide, nitride, carbide, etc. is coated on the upper surface of a height gauge made of a hard ceramic material.