JPS58104806A - Electrostatic conveying device - Google Patents
Electrostatic conveying deviceInfo
- Publication number
- JPS58104806A JPS58104806A JP20180681A JP20180681A JPS58104806A JP S58104806 A JPS58104806 A JP S58104806A JP 20180681 A JP20180681 A JP 20180681A JP 20180681 A JP20180681 A JP 20180681A JP S58104806 A JPS58104806 A JP S58104806A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- voltage
- electrodes
- conveyance
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G11/00—Chutes
- B65G11/20—Auxiliary devices, e.g. for deflecting, controlling speed of, or agitating articles or solids
- B65G11/203—Auxiliary devices, e.g. for deflecting, controlling speed of, or agitating articles or solids for articles
Abstract
Description
【発明の詳細な説明】
本発明は、静電式搬送装置に関し、特に真空装置を用い
た半導体□素・子の製造工程に見られるような、真空で
かつ清浄な雰囲気を壊すことなく使用するこ□とのでき
る搬送装置に関する。[Detailed Description of the Invention] The present invention relates to an electrostatic transfer device, and in particular, it can be used without destroying a vacuum and clean atmosphere, as seen in the manufacturing process of semiconductor devices using vacuum devices. Concerning a conveyance device that can do this.
従来、半導体素子基板(以下「ウェーハ」という。)を
取扱う搬送装置としては、ベルトコンペア全用いたもの
が一般的であるが、装置規模が比較的大きくなる上、モ
ータ、駆動力伝達系の摺動部においてゴミが発生すると
いう問題がある。Conventionally, conveyance equipment that handles semiconductor element substrates (hereinafter referred to as "wafers") has generally been fully equipped with belt comparers, but the scale of the equipment is relatively large, and the sliding of the motor and drive force transmission system is There is a problem in that dust is generated in moving parts.
また、他の方式としては、搬送路を傾斜させることによ
って移送対象物tm降させる、いわゆ・る重力落下方式
のものがある。この方式は構造が簡単である反面、滑降
途中で移送対象物が停止したり、滑降終了時において移
送対象物がストッパにIli失して損傷したりするとい
う問題がある。これに苅しては、前記傾斜した搬送路に
振動を与えることにより、上記問題を解消しようとする
試みがあるが、振動を与えるために機構か複雑になると
いう別の問題が生ずる。Further, as another method, there is a so-called gravity fall method in which the object to be transferred tm is lowered by tilting the conveyance path. Although this system has a simple structure, there are problems in that the object to be transferred may stop during the downhill slide, or the object to be transferred may be lost to the stopper and damaged at the end of the downhill slide. On the other hand, attempts have been made to solve the above problem by applying vibrations to the inclined conveyance path, but this creates another problem in that the mechanism becomes complicated in order to apply vibrations.
本発明は上記事情に鑑みてなされたもので、その目的と
するところは、従−の搬送装置の上述の如き間腫を解消
し、真空下でも使用可能で、かつ、搬送時における対象
物へのダ□、メージが少ない搬送″i1
装置を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to eliminate the above-mentioned problems of conventional conveying devices, to be usable even under vacuum, and to be able to protect objects during conveyance. The main purpose of the present invention is to provide a transport device with a small number of images.
本発明の要点は、重力落下方式の搬送装置において、対
象物の滑降を静電吸引力を用いて制御するようにした点
にあり、具体的には、前記静電吸引力を、搬送部におい
ては対象物に浮力を与えるために利用し、制動部におい
ては対象物に制動力を与大るために利用するようにした
静電式搬送装置にある。The gist of the present invention is that, in a gravity-drop type conveyance device, the sliding of an object is controlled using electrostatic attraction force. Specifically, the electrostatic attraction force is applied to the conveyance section. This electrostatic transport device is used to apply buoyancy to the object, and is used in the braking section to increase the braking force to the object.
なお、本発明において、半導電性1s1!体という語は
、10’〜108Ω備程度の高抵抗を有する半導体を指
し、例えばセルロース・カーボン、チタン酸マグネシウ
ム等がこれに当る。In addition, in the present invention, semiconducting 1s1! The term "body" refers to a semiconductor having a high resistance of about 10' to 108 ohms, such as cellulose carbon, magnesium titanate, etc.
以下、本発明の実施例を図面に基づいて詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第1図は本発明の詳細な説明するための図であり、図に
おいて、lは搬送部、2は制動部である。FIG. 1 is a diagram for explaining the present invention in detail, and in the figure, 1 is a conveyance section, and 2 is a brake section.
搬送部1は第1の電極板6と、この上方に一定の距lI
lを以て設け、うれた第2の電極板7とから構成される
。h!斜した轡送路を有し、制動部2番ま裏面に電極板
12を有する一対の牛導電性誌電体く以下、「半導電体
」といへ。) 13 k m’diic: Nkt板6
と同 □一平面をなすように配置して構成されてい
る。The transport section 1 has a first electrode plate 6 and a certain distance lI above it.
1 and a hollow second electrode plate 7. h! A pair of electrically conductive electromagnetic materials having an oblique feed path and an electrode plate 12 on the back side of the second brake part are hereinafter referred to as "semiconductor materials". ) 13 km m'diic: Nkt board 6
Same as □They are arranged so as to form one plane.
本搬送装置において、絨送部lの削記寛極板6゜7閏に
電圧を印加すると両電極板間に静電吸引力が生じ、これ
が電極板6上の移送対象物3に浮力として作用する。ま
た、制動部2の前記一対の半導電体13.13の電極1
2.12間に電圧を印加すると、前記半導電体13,1
3と該半導電体上の移送対象物δとの間に、いわゆる、
Tohn@+5n−Rah’bek効果による静電吸引
力が′生じて、これが移送対象物3に制動力として作用
する。In this conveying device, when a voltage is applied to the cutting electrode plates 6 and 7 of the carpet feeding section l, an electrostatic attraction force is generated between both electrode plates, and this acts as a buoyant force on the object to be transferred 3 on the electrode plate 6. do. Moreover, the electrode 1 of the pair of semiconductor bodies 13.13 of the braking unit 2
2. When a voltage is applied between 12, the semiconductors 13 and 1
3 and the object to be transferred δ on the semiconductor body, there is a so-called
An electrostatic attraction force is generated due to the Tohn@+5n-Rah'bek effect, and this acts on the transferred object 3 as a braking force.
なお、ここで印加する電圧は両流はもとより交流も使用
可能である。Note that the voltage applied here can be applied not only in both directions but also in alternating current.
また、傾斜した搬送路の下流部に移送対象物5の速度検
出ヘッド11を設けて、この信号により前記制動部2の
電極12に印加する電圧を制御することによって、移送
対象物3を所定の位置までスムーズに搬送することが可
能である。なお、16は速度検出回路、17は印加電圧
算出回路、18は印加電「発生回路、そして19は電源
部である。Further, a speed detection head 11 for the object to be transferred 5 is provided at the downstream part of the inclined conveyance path, and the voltage applied to the electrode 12 of the braking section 2 is controlled by this signal, so that the object to be transferred 3 is controlled at a predetermined level. It is possible to smoothly convey it to the desired position. Note that 16 is a speed detection circuit, 17 is an applied voltage calculation circuit, 18 is an applied voltage generation circuit, and 19 is a power supply section.
第2図は本発明の具体的実施例であるウェーへ搬送装置
の一部を破断して示す斜視図であり、第3図は第2図の
1−1断面図、第4図は同f=j断面図である。FIG. 2 is a partially cutaway perspective view of a wafer conveyance device according to a specific embodiment of the present invention, FIG. 3 is a sectional view taken along line 1-1 in FIG. 2, and FIG. =j sectional view.
第2図より明らかな如く、本実施例装置はウェーハ3t
−1搬送路上を滑動させて搬送する搬送部1と、該搬送
部1を通過したウェーハ3 を停止させる制動部2とか
ら構成されている。搬送部lにおいては、搬送ステージ
養の上面に設けられた搬送路表面に絶縁体5を介して電
極板6が敷設されており、該電極板6の上方には該電極
板6から一定の距離Yr&4てて、その裏FIIJ−に
電極板7を接着した半導電体8が敷設されている。該半
導電体8は絶縁体9を介して支持部材10に一定されて
おり、更に該支持部材10は前記電極板6と半導電体8
との間に所定の間Wllk形成するように、搬送ステー
ジ番と接合されている。また動記搬送路の出口近傍には
、ウェーハ3の滑動速度を検出するための光センサ等を
用いた速度検出へラド11が層設されている。As is clear from FIG.
-1 It is composed of a transport section 1 that slides and transports on a transport path, and a braking section 2 that stops the wafer 3 that has passed through the transport section 1. In the transport section l, an electrode plate 6 is laid on the surface of the transport path provided on the upper surface of the transport stage with an insulator 5 in between. A semiconductor 8 with an electrode plate 7 bonded thereto is laid on the back side FIIJ- of Yr&4. The semiconductor 8 is fixed to a support member 10 via an insulator 9, and the support member 10 is connected to the electrode plate 6 and the semiconductor 8.
It is joined to the transport stage number so that a predetermined interval Wllk is formed between the transport stage number and the transport stage number. Further, near the exit of the moving conveyance path, a speed detection radar 11 using an optical sensor or the like for detecting the sliding speed of the wafer 3 is provided.
一方、制動部2は前記搬送部l&−直結されており、裏
面に電極板12を接着した前記一対一の半導電体13.
13が、前配搬送路表自と同一、平面をなすように、絶
縁体14を介して制動ステージ14上に配置されている
。On the other hand, the braking section 2 is directly connected to the conveying section l&-, and the one-to-one semiconductor body 13.
13 is placed on the brake stage 14 via an insulator 14 so as to be flush with the surface of the front conveyance path.
次に、第3図、第4図により上述の如く構成されている
本実施例装置の動作を説明する。Next, the operation of the apparatus of this embodiment constructed as described above will be explained with reference to FIGS. 3 and 4.
第3図において、電極板6,7間に電圧を印加すると、
前記両電極間に静電吸引力が発生し、搬送路上を移送さ
れるウェーハ3に浮力flが作用する。これにより、ウ
ェーハ3の滑動に伴う摩擦抵抗が減少するため、ウェー
ハ3に一宇の初期速度を与えるだけで比較的長距離の搬
送全行うことができる。また、搬送路の傾斜角を小さく
すること拳が可能となる。なお、搬送路上部に半導電体
8が敷設されているために、ウェーハ3が搬送路上部に
接触した場合でも、該ウェー/X3に過大電流が流れる
ことがなく、ウェーハ3のダメージを防止することがで
きる。In FIG. 3, when a voltage is applied between electrode plates 6 and 7,
An electrostatic attraction force is generated between the two electrodes, and a buoyant force fl acts on the wafer 3 being transferred on the transport path. This reduces the frictional resistance that accompanies the sliding of the wafer 3, so that it is possible to transport the wafer 3 over a relatively long distance by simply giving it an initial velocity of one centimeter. Furthermore, it becomes possible to reduce the inclination angle of the conveyance path. Furthermore, since the semiconductor 8 is laid on the top of the transport path, even if the wafer 3 comes into contact with the top of the transport path, no excessive current will flow through the wafer/X3, thereby preventing damage to the wafer 3. be able to.
″ 第4図において、一対の電極板12に電圧を印加す
ると、ウェーハ3と半導電体13との間に前記静電吸引
力fpが発生し、ウェーハ3の摩擦抵抗が増加する。こ
のため、前述の速度検出ヘッドによって検出した搬送終
了時のウェーハ3の速度情報に基づいて、前記電極間の
電圧を−M整し、ウェーハ3の滑動に伴う摩擦抵抗を制
御することにより、ウェーハ3を所宇の位置に停止させ
ることが可能となる。なお、この制動機能は搬送路が傾
斜していない場合にも用いることができることは言うま
でもない。4, when a voltage is applied to the pair of electrode plates 12, the electrostatic attractive force fp is generated between the wafer 3 and the semiconductor 13, and the frictional resistance of the wafer 3 increases.For this reason, Based on the speed information of the wafer 3 at the end of conveyance detected by the speed detection head mentioned above, the voltage between the electrodes is adjusted to -M, and the frictional resistance accompanying the sliding of the wafer 3 is controlled, so that the wafer 3 can be moved to the desired position. It goes without saying that this braking function can be used even when the transport path is not inclined.
なお、制−動部2における牛導引体13.13に印加す
る電圧として交流を用いる場合には、前記半導体を極性
を異にする多数の詳に分けて、該細分された群に印加す
る交流の位相をずらせることが望ましい。Note that when alternating current is used as the voltage to be applied to the conductor 13.13 in the brake part 2, the semiconductor is divided into a large number of different polarities and the voltage is applied to the subdivided groups. It is desirable to shift the phase of the alternating current.
以上述べた如く、本発明によれは重力落下方式の搬送装
置において、対象物の滑降を静電吸引力を用いて制御す
るようにしたので、真空下でも使用可能で、かつ、搬送
時における対象物へのダメージが少なく女史した搬送お
よび停止が匍゛能な搬送装置を実現できるという顕著な
効果kmするものである。As described above, the present invention uses an electrostatic attraction force to control the sliding of objects in a gravity-drop type transport device, so that it can be used even under vacuum, and This has the remarkable effect that it is possible to realize a conveying device that causes little damage to objects and is capable of fast conveying and stopping.
第1図は本発明の搬送装置の概要を示す図、第2図は具
体的実施例を示す図、第3図は第2図の1−1断面図、
第4図は第2図のト」断面図である。
1:搬送部、2:制動部、3:対象物、6,7:11極
板、8:半導電体、11:速度検出ヘッド、12:電極
板、13:半導電体、16:速度検出回路、17:印加
電圧算出回路、18:印加電圧発生回路、19:電源部
。
第2図
1
第3図
■
第4[ゾ
\FIG. 1 is a diagram showing an outline of the conveying device of the present invention, FIG. 2 is a diagram showing a specific embodiment, FIG. 3 is a 1-1 sectional view of FIG. 2,
FIG. 4 is a cross-sectional view of FIG. 2. 1: Conveying section, 2: Braking section, 3: Target object, 6, 7: 11 Plate, 8: Semiconductor, 11: Speed detection head, 12: Electrode plate, 13: Semiconductor, 16: Speed detection Circuit, 17: Applied voltage calculation circuit, 18: Applied voltage generation circuit, 19: Power supply section. Fig. 2 1 Fig. 3■ No. 4 [zo\
Claims (3)
て搬送する搬送装置において、前記搬送路表向に移送対
象物の滑動方向に沿って設けた電極および該′IM極の
上方に該電極と一定の距離を以て設けた裏面に電、極を
有する半導電性誘電体から成り、前記両111極間に電
圧を印加可能に構成したことを特徴とする静電式搬送装
置。(1) In a conveyance device that conveys a conductive object by sliding it on a conveyance path, an electrode provided on the surface of the conveyance path along the sliding direction of the object and above the IM pole. 1. An electrostatic transfer device comprising a semiconductive dielectric material having an electrode on its back surface provided at a certain distance from the electrode, and configured to be able to apply a voltage between the two electrodes.
て搬送する搬送装置において、前記搬送路の出口部に、
裏面に電極を有する複数の半導電性誘電体を前記搬送路
の表面と同一平面となるように配置し、前記複数の半導
電性誘電体を2群に分けて、その一方の群に属する前記
半導電性誘電体と使方の群に属する前記半導電性誘電体
との間に電圧を印加可能に構成した制動部を設けたこと
を特徴とする静電式搬送装置。(2) In a conveyance device that conveys a conductive object by sliding it on a conveyance path, at the outlet of the conveyance path,
A plurality of semiconducting dielectrics having electrodes on their back surfaces are arranged so as to be flush with the surface of the transport path, and the plurality of semiconducting dielectrics are divided into two groups, and the semiconducting dielectrics belonging to one of the groups are 1. An electrostatic conveyance device, comprising: a braking section configured to be able to apply a voltage between a semiconductive dielectric and the semiconductive dielectric belonging to the usage group.
て搬送する搬送装置において、前記搬送路表面に移送対
象物の滑□動方向に沿って設けた電極および該電極の上
方に該電極と一定の距離を以・て設けた裏面に電極を看
する半導電性誘電体から成り、前記両電極間に電圧を印
加可能とした搬送部と、該搬送部の川口側に、裏面に電
極Yt有する複数の半導電性誘電体全前記搬送路表面と
同一平面となるように配置し、前記複数の牛導市性&電
体を2群に分けて、その一方の群に属する創配牛導電性
′誘電体と他方の群に属する前記半導電性L%F体との
間に電圧を印加可能とした制御動部0とから構成される
こ゛とを特徴とする静電式搬送装置。(3) In a conveyance device that conveys a conductive transfer group rug by sliding it on a conveyance path, an electrode is provided on the surface of the conveyance path along the sliding direction of the object to be transferred, and an electrode is provided above the electrode. A conveyor section made of a semi-conductive dielectric material, which is placed at a certain distance from the electrodes and faces the electrodes on its back surface, and a voltage can be applied between the two electrodes; A plurality of semiconductive dielectric bodies having electrodes Yt are all arranged so as to be flush with the surface of the conveyance path, and the plurality of semiconductive dielectric bodies are divided into two groups, and the semiconductive dielectric bodies belonging to one of the groups are arranged. 1. An electrostatic conveyance device comprising a control moving part 0 capable of applying a voltage between a conductive dielectric material and the semiconductive L%F material belonging to the other group.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20180681A JPS58104806A (en) | 1981-12-14 | 1981-12-14 | Electrostatic conveying device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20180681A JPS58104806A (en) | 1981-12-14 | 1981-12-14 | Electrostatic conveying device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58104806A true JPS58104806A (en) | 1983-06-22 |
Family
ID=16447224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20180681A Pending JPS58104806A (en) | 1981-12-14 | 1981-12-14 | Electrostatic conveying device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58104806A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7336015B2 (en) * | 2000-12-23 | 2008-02-26 | VanTec Gesellschaft für Venturekapital und Unternehmensberatung | Method of manipulating wafers |
CN106425906A (en) * | 2016-11-21 | 2017-02-22 | 郑州狮虎磨料磨具有限公司 | Super-hard grinding wheel production line and conveying device thereof |
JP2017511262A (en) * | 2014-03-17 | 2017-04-20 | グラビット,インク. | Electric adhesion gripping system with smart brake and measurement |
CN111381073A (en) * | 2020-05-01 | 2020-07-07 | 深迪半导体(上海)有限公司 | MEMS accelerometer and method for improving shock resistance thereof |
US10745164B2 (en) | 2014-04-21 | 2020-08-18 | Grabit, Inc. | Automated item handling with reconfigurable totes |
US10987815B2 (en) | 2016-01-12 | 2021-04-27 | Grabit, Inc. | Methods and systems for electroadhesion-based manipulation and mechanical release in manufacturing |
-
1981
- 1981-12-14 JP JP20180681A patent/JPS58104806A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7336015B2 (en) * | 2000-12-23 | 2008-02-26 | VanTec Gesellschaft für Venturekapital und Unternehmensberatung | Method of manipulating wafers |
JP2017511262A (en) * | 2014-03-17 | 2017-04-20 | グラビット,インク. | Electric adhesion gripping system with smart brake and measurement |
US10745164B2 (en) | 2014-04-21 | 2020-08-18 | Grabit, Inc. | Automated item handling with reconfigurable totes |
US10987815B2 (en) | 2016-01-12 | 2021-04-27 | Grabit, Inc. | Methods and systems for electroadhesion-based manipulation and mechanical release in manufacturing |
US11203123B2 (en) | 2016-01-12 | 2021-12-21 | Grabit, Inc. | Methods and systems for combined negative pressure and electroadhesion-based manipulation in manufacturing |
US11338449B2 (en) | 2016-01-12 | 2022-05-24 | Grabit, Inc. | Methods and systems for electroadhesion-based manipulation in manufacturing |
CN106425906A (en) * | 2016-11-21 | 2017-02-22 | 郑州狮虎磨料磨具有限公司 | Super-hard grinding wheel production line and conveying device thereof |
CN111381073A (en) * | 2020-05-01 | 2020-07-07 | 深迪半导体(上海)有限公司 | MEMS accelerometer and method for improving shock resistance thereof |
CN111381073B (en) * | 2020-05-01 | 2021-11-30 | 深迪半导体(绍兴)有限公司 | MEMS accelerometer and method for improving shock resistance thereof |
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