JPS58104508A - 超高周波数合成回路 - Google Patents
超高周波数合成回路Info
- Publication number
- JPS58104508A JPS58104508A JP20837782A JP20837782A JPS58104508A JP S58104508 A JPS58104508 A JP S58104508A JP 20837782 A JP20837782 A JP 20837782A JP 20837782 A JP20837782 A JP 20837782A JP S58104508 A JPS58104508 A JP S58104508A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- field effect
- output signal
- effect transistor
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002194 synthesizing effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Landscapes
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Superheterodyne Receivers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Developers In Electrophotography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8122258A FR2495211B1 (fr) | 1980-12-02 | 1981-11-27 | Dispositif de fixation de penture sur portes calorifugees ou elements similaires |
| FR8122258 | 1981-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58104508A true JPS58104508A (ja) | 1983-06-22 |
| JPH0324808B2 JPH0324808B2 (OSRAM) | 1991-04-04 |
Family
ID=9264439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20837782A Granted JPS58104508A (ja) | 1981-11-27 | 1982-11-27 | 超高周波数合成回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58104508A (OSRAM) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49103582A (OSRAM) * | 1973-02-05 | 1974-10-01 |
-
1982
- 1982-11-27 JP JP20837782A patent/JPS58104508A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49103582A (OSRAM) * | 1973-02-05 | 1974-10-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0324808B2 (OSRAM) | 1991-04-04 |
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