JPS58103144U - GaAs chamfered wafer - Google Patents
GaAs chamfered waferInfo
- Publication number
- JPS58103144U JPS58103144U JP19348581U JP19348581U JPS58103144U JP S58103144 U JPS58103144 U JP S58103144U JP 19348581 U JP19348581 U JP 19348581U JP 19348581 U JP19348581 U JP 19348581U JP S58103144 U JPS58103144 U JP S58103144U
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- wafer
- chamfered
- chamfer
- chamfered wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａは従来の単結晶インゴットから切り出した状態
のウェハーの断面形状の一例、同じくｂは面取り加工の
容易な、切り出した状態のウエノ１−の断面形状の一例
、第２図ａ、 ｂ、 ｃはいずれも従来のＳｉウェ
ハーの断面形状、第３図は本考案の一実施例の断面形状
、第４図は面取り角度θが７５°を越えた場合のウェハ
ーの断面形状の一例、第５図ａは面取り角度θが４５°
て面取り辺長１のウェハーの平面図、同じくｂはａのＡ
−Ａ断面の要部拡大図、同じくＣは面取り角度θが１５
° 。
で面取り辺長が同じく１のウェハーの平面図、同じくｄ
はＣのＢ−Ｂ断面の要部拡大図である。
図において、１・・・・・・ウェハー、２・・・・・・
フォトレジスト膜。 ゛Figure 1a is an example of the cross-sectional shape of a wafer cut from a conventional single crystal ingot, and b is an example of the cross-sectional shape of a cut-out wafer that can be easily chamfered.Figures 2a and b , c are all cross-sectional shapes of a conventional Si wafer, FIG. 3 is a cross-sectional shape of an embodiment of the present invention, FIG. 4 is an example of a cross-sectional shape of a wafer when the chamfer angle θ exceeds 75°, and FIG. In Figure 5a, the chamfer angle θ is 45°.
A plan view of a wafer with a chamfered side length of 1, similarly b is A of a.
- Enlarged view of the main part of cross-section A, also in C, the chamfer angle θ is 15
°. A plan view of a wafer with the same chamfered side length of 1, also d
is an enlarged view of the main part of the BB cross section of C. In the figure, 1... wafer, 2...
Photoresist film.゛
Claims (1)
θが２０°くθ７５°で、面取り辺長ｌが面取り端面部
曲率半径ｒの接線方向に０＜ｌ＜１ｍ３００μｍでかつ
面取り端面部曲率半径ｒがｒ＜Σ（ｔはウェハー厚み）
であることを特徴とするＧａＡｓ面取りウェハー。In a chamfered GaAs wafer, the chamfer angle θ is 20° and θ75°, the chamfer side length l is 0<l<1m300 μm in the tangential direction of the chamfer end face radius of curvature r, and the chamfer end face radius of curvature r is r< Σ (t is wafer thickness)
A GaAs chamfered wafer characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19348581U JPS58103144U (en) | 1981-12-29 | 1981-12-29 | GaAs chamfered wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19348581U JPS58103144U (en) | 1981-12-29 | 1981-12-29 | GaAs chamfered wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58103144U true JPS58103144U (en) | 1983-07-13 |
Family
ID=30106837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19348581U Pending JPS58103144U (en) | 1981-12-29 | 1981-12-29 | GaAs chamfered wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58103144U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012176755A1 (en) * | 2011-06-23 | 2012-12-27 | 住友電気工業株式会社 | Method for producing silicon carbide substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127772A (en) * | 1974-09-02 | 1976-03-08 | Nippon Electric Co | Handotaisochi no seizohoho |
| JPS52155968A (en) * | 1976-06-19 | 1977-12-24 | Fujitsu Ltd | Semiconductor wafer and its production |
-
1981
- 1981-12-29 JP JP19348581U patent/JPS58103144U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127772A (en) * | 1974-09-02 | 1976-03-08 | Nippon Electric Co | Handotaisochi no seizohoho |
| JPS52155968A (en) * | 1976-06-19 | 1977-12-24 | Fujitsu Ltd | Semiconductor wafer and its production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012176755A1 (en) * | 2011-06-23 | 2012-12-27 | 住友電気工業株式会社 | Method for producing silicon carbide substrate |
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