JPS5783911A - Transistor circuit - Google Patents

Transistor circuit

Info

Publication number
JPS5783911A
JPS5783911A JP55158200A JP15820080A JPS5783911A JP S5783911 A JPS5783911 A JP S5783911A JP 55158200 A JP55158200 A JP 55158200A JP 15820080 A JP15820080 A JP 15820080A JP S5783911 A JPS5783911 A JP S5783911A
Authority
JP
Japan
Prior art keywords
current
ratio
base
emitter
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55158200A
Other languages
Japanese (ja)
Inventor
Seijiro Moriyama
Tsutomu Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55158200A priority Critical patent/JPS5783911A/en
Publication of JPS5783911A publication Critical patent/JPS5783911A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To set the ratio of an input and an output current by rhe ratio of a saturation current, by using two transistors (TR) having the opposite polarities.
CONSTITUTION: A PNP TR11 and an NPN TR12 are used; the emitter of the TR11 and the base of the TR12 are connected mutually, and the base and collector of the TR11 and the emitter of the TR12 are grounded in common. When the base current of the TR11 is disregarded, the ratio of an input current 13 and an output current 14 is equal to the ratio of the saturation current of the TR11 and that of the TR12, and its value is nearly constant without reference to fluctuations of temperature. When the TR11 is of a lateral PNP type, the effective base density ratio of the both is about 100, so the both are equalized in emitter area and base thickness, so that the output current is decreased to one- hundredth the input current.
COPYRIGHT: (C)1982,JPO&Japio
JP55158200A 1980-11-12 1980-11-12 Transistor circuit Pending JPS5783911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158200A JPS5783911A (en) 1980-11-12 1980-11-12 Transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158200A JPS5783911A (en) 1980-11-12 1980-11-12 Transistor circuit

Publications (1)

Publication Number Publication Date
JPS5783911A true JPS5783911A (en) 1982-05-26

Family

ID=15666453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158200A Pending JPS5783911A (en) 1980-11-12 1980-11-12 Transistor circuit

Country Status (1)

Country Link
JP (1) JPS5783911A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893091A (en) * 1988-10-11 1990-01-09 Burr-Brown Corporation Complementary current mirror for correcting input offset voltage of diamond follower, especially as input stage for wide-band amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893091A (en) * 1988-10-11 1990-01-09 Burr-Brown Corporation Complementary current mirror for correcting input offset voltage of diamond follower, especially as input stage for wide-band amplifier

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