JPS5754331A - - Google Patents
Info
- Publication number
- JPS5754331A JPS5754331A JP56121971A JP12197181A JPS5754331A JP S5754331 A JPS5754331 A JP S5754331A JP 56121971 A JP56121971 A JP 56121971A JP 12197181 A JP12197181 A JP 12197181A JP S5754331 A JPS5754331 A JP S5754331A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17690180A | 1980-08-11 | 1980-08-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5754331A true JPS5754331A (hu) | 1982-03-31 |
Family
ID=22646361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56121971A Pending JPS5754331A (hu) | 1980-08-11 | 1981-08-05 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5754331A (hu) |
DE (1) | DE3131086A1 (hu) |
FR (1) | FR2488443A1 (hu) |
GB (1) | GB2082384A (hu) |
NL (1) | NL8103752A (hu) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124424U (hu) * | 1985-01-25 | 1986-08-05 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606935A (en) * | 1985-10-10 | 1986-08-19 | International Business Machines Corporation | Process and apparatus for producing high purity oxidation on a semiconductor substrate |
US5721176A (en) * | 1992-05-29 | 1998-02-24 | Olin Corporation | Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2026156A1 (en) * | 1970-05-29 | 1971-12-09 | Licentia Gmbh | Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant |
CA936791A (en) * | 1970-11-10 | 1973-11-13 | Northern Electric Company Limited | Method of reducing the mobile ion contamination in thermally grown silicon dioxide |
US4167915A (en) * | 1977-03-09 | 1979-09-18 | Atomel Corporation | High-pressure, high-temperature gaseous chemical apparatus |
NL7903198A (nl) * | 1979-04-24 | 1980-10-28 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
-
1981
- 1981-08-05 FR FR8115181A patent/FR2488443A1/fr active Pending
- 1981-08-05 JP JP56121971A patent/JPS5754331A/ja active Pending
- 1981-08-06 DE DE19813131086 patent/DE3131086A1/de not_active Withdrawn
- 1981-08-07 GB GB8124252A patent/GB2082384A/en not_active Withdrawn
- 1981-08-10 NL NL8103752A patent/NL8103752A/nl not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124424U (hu) * | 1985-01-25 | 1986-08-05 | ||
JPH0518182Y2 (hu) * | 1985-01-25 | 1993-05-14 |
Also Published As
Publication number | Publication date |
---|---|
NL8103752A (nl) | 1982-03-01 |
DE3131086A1 (de) | 1982-03-25 |
GB2082384A (en) | 1982-03-03 |
FR2488443A1 (fr) | 1982-02-12 |