JPS5754331A - - Google Patents

Info

Publication number
JPS5754331A
JPS5754331A JP56121971A JP12197181A JPS5754331A JP S5754331 A JPS5754331 A JP S5754331A JP 56121971 A JP56121971 A JP 56121971A JP 12197181 A JP12197181 A JP 12197181A JP S5754331 A JPS5754331 A JP S5754331A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56121971A
Other languages
Japanese (ja)
Inventor
Fueritsukusu Shumitsuto Hooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5754331A publication Critical patent/JPS5754331A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
JP56121971A 1980-08-11 1981-08-05 Pending JPS5754331A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17690180A 1980-08-11 1980-08-11

Publications (1)

Publication Number Publication Date
JPS5754331A true JPS5754331A (en) 1982-03-31

Family

ID=22646361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121971A Pending JPS5754331A (en) 1980-08-11 1981-08-05

Country Status (5)

Country Link
JP (1) JPS5754331A (en)
DE (1) DE3131086A1 (en)
FR (1) FR2488443A1 (en)
GB (1) GB2082384A (en)
NL (1) NL8103752A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124424U (en) * 1985-01-25 1986-08-05

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US5721176A (en) * 1992-05-29 1998-02-24 Olin Corporation Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
CA936791A (en) * 1970-11-10 1973-11-13 Northern Electric Company Limited Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
NL7903198A (en) * 1979-04-24 1980-10-28 Philips Nv Semiconductor device subjected to heat treatment in reactor - has double walls with purging gas flowing through cavity entraining impurities

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124424U (en) * 1985-01-25 1986-08-05
JPH0518182Y2 (en) * 1985-01-25 1993-05-14

Also Published As

Publication number Publication date
DE3131086A1 (en) 1982-03-25
GB2082384A (en) 1982-03-03
NL8103752A (en) 1982-03-01
FR2488443A1 (en) 1982-02-12

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