JPS5753985B2 - - Google Patents

Info

Publication number
JPS5753985B2
JPS5753985B2 JP50071773A JP7177375A JPS5753985B2 JP S5753985 B2 JPS5753985 B2 JP S5753985B2 JP 50071773 A JP50071773 A JP 50071773A JP 7177375 A JP7177375 A JP 7177375A JP S5753985 B2 JPS5753985 B2 JP S5753985B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50071773A
Other versions
JPS51147982A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50071773A priority Critical patent/JPS51147982A/ja
Publication of JPS51147982A publication Critical patent/JPS51147982A/ja
Publication of JPS5753985B2 publication Critical patent/JPS5753985B2/ja
Priority to US06/689,491 priority patent/US4951111A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP50071773A 1975-06-13 1975-06-13 Integrated circuit Granted JPS51147982A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50071773A JPS51147982A (en) 1975-06-13 1975-06-13 Integrated circuit
US06/689,491 US4951111A (en) 1975-06-13 1985-01-03 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071773A JPS51147982A (en) 1975-06-13 1975-06-13 Integrated circuit

Publications (2)

Publication Number Publication Date
JPS51147982A JPS51147982A (en) 1976-12-18
JPS5753985B2 true JPS5753985B2 (ja) 1982-11-16

Family

ID=13470197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071773A Granted JPS51147982A (en) 1975-06-13 1975-06-13 Integrated circuit

Country Status (2)

Country Link
US (1) US4951111A (ja)
JP (1) JPS51147982A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6253394B2 (ja) * 1982-12-03 1987-11-10 Honda Motor Co Ltd
JPS638175U (ja) * 1986-07-03 1988-01-20

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120148A (en) * 1979-03-09 1980-09-16 Sanyo Electric Co Ltd Semiconductor integrated circuit
US4319396A (en) * 1979-12-28 1982-03-16 Bell Telephone Laboratories, Incorporated Method for fabricating IGFET integrated circuits
US5165086A (en) * 1985-02-20 1992-11-17 Hitachi, Ltd. Microprocessor chip using two-level metal lines technology
US5140387A (en) * 1985-11-08 1992-08-18 Lockheed Missiles & Space Company, Inc. Semiconductor device in which gate region is precisely aligned with source and drain regions
US5172210A (en) * 1987-03-18 1992-12-15 Mitsubishi Denki Kabushiki Kaisha Master slice integrated circuit having a memory region
US5301349A (en) * 1988-12-28 1994-04-05 Kabushiki Kaisha Toshiba Single chip computer having ground wire formed immediately parallel a data bus and drivers formed directly under the data bus for high speed data transfer
JPH0329342A (ja) * 1989-06-26 1991-02-07 Toshiba Corp 半導体装置
JPH04352467A (ja) * 1991-05-30 1992-12-07 Toshiba Corp Ｍｏｓ型半導体集積回路装置
US5182629A (en) * 1991-10-24 1993-01-26 Unisys Corporation Integrated circuit die having a power distribution system for at least ten-thousand bipolar logic cells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946876A (ja) * 1972-09-11 1974-05-07

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541543A (en) * 1966-07-25 1970-11-17 Texas Instruments Inc Binary decoder
US3475621A (en) * 1967-03-23 1969-10-28 Ibm Standardized high-density integrated circuit arrangement and method
US3891190A (en) * 1972-07-07 1975-06-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates
US3987418A (en) * 1974-10-30 1976-10-19 Motorola, Inc. Chip topography for MOS integrated circuitry microprocessor chip

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946876A (ja) * 1972-09-11 1974-05-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6253394B2 (ja) * 1982-12-03 1987-11-10 Honda Motor Co Ltd
JPS638175U (ja) * 1986-07-03 1988-01-20

Also Published As

Publication number Publication date
US4951111A (en) 1990-08-21
JPS51147982A (en) 1976-12-18

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