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Priority to JP11303376ApriorityCriticalpatent/JPS5338987A/ja
Publication of JPS5338987ApublicationCriticalpatent/JPS5338987A/ja
Publication of JPS5749144B2publicationCriticalpatent/JPS5749144B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats