JPS5748870B2 - - Google Patents
Info
- Publication number
- JPS5748870B2 JPS5748870B2 JP5374773A JP5374773A JPS5748870B2 JP S5748870 B2 JPS5748870 B2 JP S5748870B2 JP 5374773 A JP5374773 A JP 5374773A JP 5374773 A JP5374773 A JP 5374773A JP S5748870 B2 JPS5748870 B2 JP S5748870B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00265122A US3846193A (en) | 1972-06-22 | 1972-06-22 | Minimizing cross-talk in l.e.d.arrays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4944687A JPS4944687A (ja) | 1974-04-26 |
| JPS5748870B2 true JPS5748870B2 (ja) | 1982-10-19 |
Family
ID=23009100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5374773A Expired JPS5748870B2 (ja) | 1972-06-22 | 1973-05-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3846193A (ja) |
| JP (1) | JPS5748870B2 (ja) |
| DE (1) | DE2322197C2 (ja) |
| FR (1) | FR2197297B1 (ja) |
| GB (1) | GB1428208A (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1023835A (en) * | 1974-07-08 | 1978-01-03 | Tadao Nakamura | Light emitting gallium phosphide device |
| US3947840A (en) * | 1974-08-16 | 1976-03-30 | Monsanto Company | Integrated semiconductor light-emitting display array |
| US3968564A (en) * | 1975-04-30 | 1976-07-13 | Northern Electric Company Limited | Alignment of optical fibers to light emitting diodes |
| FR2325195A1 (fr) * | 1975-09-18 | 1977-04-15 | Radiotechnique Compelec | Ensemble monolithique semiconducteur electroluminescent |
| US4205227A (en) * | 1976-11-26 | 1980-05-27 | Texas Instruments Incorporated | Single junction emitter array |
| US4199385A (en) * | 1977-09-21 | 1980-04-22 | International Business Machines Corporation | Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion |
| JPH0736449B2 (ja) * | 1984-11-02 | 1995-04-19 | ゼロツクス コーポレーシヨン | 発光ダイオード印刷アレイの製造法 |
| US9269664B2 (en) * | 2012-04-10 | 2016-02-23 | Mediatek Inc. | Semiconductor package with through silicon via interconnect and method for fabricating the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3629018A (en) * | 1969-01-23 | 1971-12-21 | Texas Instruments Inc | Process for the fabrication of light-emitting semiconductor diodes |
| FR2126462A5 (ja) * | 1969-07-09 | 1972-10-06 | Radiotechnique Compelec | |
| FR2080849A6 (ja) * | 1970-02-06 | 1971-11-26 | Radiotechnique Compelec | |
| GB1392955A (en) * | 1971-08-30 | 1975-05-07 | Ibm | Light emitting diode |
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1972
- 1972-06-22 US US00265122A patent/US3846193A/en not_active Expired - Lifetime
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1973
- 1973-05-03 DE DE2322197A patent/DE2322197C2/de not_active Expired
- 1973-05-16 JP JP5374773A patent/JPS5748870B2/ja not_active Expired
- 1973-05-25 FR FR7321362*A patent/FR2197297B1/fr not_active Expired
- 1973-05-30 GB GB2582373A patent/GB1428208A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2322197C2 (de) | 1983-11-24 |
| US3846193A (en) | 1974-11-05 |
| FR2197297A1 (ja) | 1974-03-22 |
| FR2197297B1 (ja) | 1975-08-22 |
| DE2322197A1 (de) | 1974-01-24 |
| JPS4944687A (ja) | 1974-04-26 |
| GB1428208A (en) | 1976-03-17 |