JPS5748237Y2 - - Google Patents
Info
- Publication number
- JPS5748237Y2 JPS5748237Y2 JP18222178U JP18222178U JPS5748237Y2 JP S5748237 Y2 JPS5748237 Y2 JP S5748237Y2 JP 18222178 U JP18222178 U JP 18222178U JP 18222178 U JP18222178 U JP 18222178U JP S5748237 Y2 JPS5748237 Y2 JP S5748237Y2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18222178U JPS5748237Y2 (de) | 1978-12-28 | 1978-12-28 | |
IT2227379U IT7922273V0 (it) | 1978-08-08 | 1979-08-02 | Persiana avvolgibile con aperture per il passaggio della luce e dell'aria. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18222178U JPS5748237Y2 (de) | 1978-12-28 | 1978-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5597098U JPS5597098U (de) | 1980-07-05 |
JPS5748237Y2 true JPS5748237Y2 (de) | 1982-10-22 |
Family
ID=29193901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18222178U Expired JPS5748237Y2 (de) | 1978-08-08 | 1978-12-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5748237Y2 (de) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
US8877639B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Method and algorithm for random half pitched interconnect layout with constant spacing |
US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US9147608B2 (en) | 2005-03-28 | 2015-09-29 | Micron Technology, Inc. | Integrated circuit fabrication |
US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
US9478497B2 (en) | 2006-08-30 | 2016-10-25 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US9553082B2 (en) | 2006-04-25 | 2017-01-24 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6033294U (ja) * | 1983-08-13 | 1985-03-07 | 立川ブラインド工業株式会社 | シヤツタ−のスラツト |
JPS6040700U (ja) * | 1983-08-26 | 1985-03-22 | 立山アルミニウム工業株式会社 | よろい戸 |
-
1978
- 1978-12-28 JP JP18222178U patent/JPS5748237Y2/ja not_active Expired
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
US9147608B2 (en) | 2005-03-28 | 2015-09-29 | Micron Technology, Inc. | Integrated circuit fabrication |
US9412594B2 (en) | 2005-03-28 | 2016-08-09 | Micron Technology, Inc. | Integrated circuit fabrication |
US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
US8877639B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Method and algorithm for random half pitched interconnect layout with constant spacing |
US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US9553082B2 (en) | 2006-04-25 | 2017-01-24 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US9478497B2 (en) | 2006-08-30 | 2016-10-25 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
Also Published As
Publication number | Publication date |
---|---|
JPS5597098U (de) | 1980-07-05 |