JPS5744009B2 - - Google Patents

Info

Publication number
JPS5744009B2
JPS5744009B2 JP15149175A JP15149175A JPS5744009B2 JP S5744009 B2 JPS5744009 B2 JP S5744009B2 JP 15149175 A JP15149175 A JP 15149175A JP 15149175 A JP15149175 A JP 15149175A JP S5744009 B2 JPS5744009 B2 JP S5744009B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15149175A
Other languages
Japanese (ja)
Other versions
JPS5275177A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15149175A priority Critical patent/JPS5275177A/en
Publication of JPS5275177A publication Critical patent/JPS5275177A/en
Publication of JPS5744009B2 publication Critical patent/JPS5744009B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
JP15149175A 1975-12-18 1975-12-18 Vapor growth device Granted JPS5275177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15149175A JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15149175A JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Publications (2)

Publication Number Publication Date
JPS5275177A JPS5275177A (en) 1977-06-23
JPS5744009B2 true JPS5744009B2 (en) 1982-09-18

Family

ID=15519648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15149175A Granted JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS5275177A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0454900Y2 (en) * 1987-04-30 1992-12-24
JPH0522311U (en) * 1991-09-05 1993-03-23 義浩 豊田 Labeling device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105221A (en) * 1984-10-11 1985-06-10 Hitachi Ltd Gas phase wafer processing apparatus
JPH0772351B2 (en) * 1986-12-01 1995-08-02 株式会社日立製作所 Metal thin film selective growth method
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
WO1991003075A1 (en) * 1989-08-21 1991-03-07 Fsi International, Inc. Gas substrate processing module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0454900Y2 (en) * 1987-04-30 1992-12-24
JPH0522311U (en) * 1991-09-05 1993-03-23 義浩 豊田 Labeling device

Also Published As

Publication number Publication date
JPS5275177A (en) 1977-06-23

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