JPS5742191B2 - - Google Patents
Info
- Publication number
- JPS5742191B2 JPS5742191B2 JP8119276A JP8119276A JPS5742191B2 JP S5742191 B2 JPS5742191 B2 JP S5742191B2 JP 8119276 A JP8119276 A JP 8119276A JP 8119276 A JP8119276 A JP 8119276A JP S5742191 B2 JPS5742191 B2 JP S5742191B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8119276A JPS536575A (en) | 1976-07-07 | 1976-07-07 | Testing method of electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8119276A JPS536575A (en) | 1976-07-07 | 1976-07-07 | Testing method of electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS536575A JPS536575A (en) | 1978-01-21 |
| JPS5742191B2 true JPS5742191B2 (en) | 1982-09-07 |
Family
ID=13739596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8119276A Granted JPS536575A (en) | 1976-07-07 | 1976-07-07 | Testing method of electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS536575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112051495A (en) * | 2020-07-27 | 2020-12-08 | 西安电子科技大学 | High-temperature high-humidity reverse bias stress damage characterization method of SiC JBS device |
-
1976
- 1976-07-07 JP JP8119276A patent/JPS536575A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112051495A (en) * | 2020-07-27 | 2020-12-08 | 西安电子科技大学 | High-temperature high-humidity reverse bias stress damage characterization method of SiC JBS device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS536575A (en) | 1978-01-21 |