JPS574100B2 - - Google Patents

Info

Publication number
JPS574100B2
JPS574100B2 JP12611275A JP12611275A JPS574100B2 JP S574100 B2 JPS574100 B2 JP S574100B2 JP 12611275 A JP12611275 A JP 12611275A JP 12611275 A JP12611275 A JP 12611275A JP S574100 B2 JPS574100 B2 JP S574100B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12611275A
Other languages
Japanese (ja)
Other versions
JPS5250176A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12611275A priority Critical patent/JPS5250176A/ja
Publication of JPS5250176A publication Critical patent/JPS5250176A/ja
Publication of JPS574100B2 publication Critical patent/JPS574100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP12611275A 1975-10-20 1975-10-20 Electrostatic induction type thyristor Granted JPS5250176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12611275A JPS5250176A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12611275A JPS5250176A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS5250176A JPS5250176A (en) 1977-04-21
JPS574100B2 true JPS574100B2 (de) 1982-01-25

Family

ID=14926915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12611275A Granted JPS5250176A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5250176A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2017401B (en) * 1977-12-23 1982-10-20 Gen Electric Planar gate turn-off fields controlled thyristors and method of making the same
CA1131800A (en) * 1978-12-20 1982-09-14 Bernard T. Murphy High voltage junction solid-state switch
SE427758B (sv) * 1979-12-11 1983-05-02 Husqvarna Ab Ingangsveljare i elektronisk symaskin
JPS6165475A (ja) * 1984-09-07 1986-04-04 Tokai Daigaku 電圧制御形負性抵抗デイバイス
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (de) * 1972-06-09 1974-05-20
JPS5012987A (de) * 1973-05-18 1975-02-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (de) * 1972-06-09 1974-05-20
JPS5012987A (de) * 1973-05-18 1975-02-10

Also Published As

Publication number Publication date
JPS5250176A (en) 1977-04-21

Similar Documents

Publication Publication Date Title
JPS5184548A (de)
JPS574100B2 (de)
FI761938A (de)
JPS5514838B2 (de)
JPS5632794B2 (de)
JPS5443825B2 (de)
JPS523458U (de)
FR2305808B1 (de)
JPS5195483U (de)
JPS526452U (de)
JPS51152062U (de)
JPS51150362U (de)
JPS5435766Y2 (de)
JPS5234300U (de)
JPS51121491U (de)
JPS5193167U (de)
JPS5190454U (de)
JPS51124425U (de)
JPS51157134U (de)
JPS51156623U (de)
CH604611A5 (de)
CH582429A5 (de)
CH589464A5 (de)
CH583875A5 (de)
CH598327A5 (de)