JPS5740672B2 - - Google Patents
Info
- Publication number
- JPS5740672B2 JPS5740672B2 JP50007184A JP718475A JPS5740672B2 JP S5740672 B2 JPS5740672 B2 JP S5740672B2 JP 50007184 A JP50007184 A JP 50007184A JP 718475 A JP718475 A JP 718475A JP S5740672 B2 JPS5740672 B2 JP S5740672B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US434181A US3883821A (en) | 1974-01-17 | 1974-01-17 | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50104883A JPS50104883A (US20090163788A1-20090625-C00002.png) | 1975-08-19 |
| JPS5740672B2 true JPS5740672B2 (US20090163788A1-20090625-C00002.png) | 1982-08-28 |
Family
ID=23723141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50007184A Expired JPS5740672B2 (US20090163788A1-20090625-C00002.png) | 1974-01-17 | 1975-01-17 |
Country Status (6)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58165283U (ja) * | 1982-04-30 | 1983-11-02 | 藤倉ゴム工業株式会社 | ピストン式流体作動装置 |
| JPS58165282U (ja) * | 1982-04-30 | 1983-11-02 | 藤倉ゴム工業株式会社 | ピストン式流体作動装置 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
| US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
| US3916339A (en) * | 1974-11-25 | 1975-10-28 | Rca Corp | Asymmetrically excited semiconductor injection laser |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
| US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
| CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
| JPS5522807A (en) * | 1978-06-30 | 1980-02-18 | Hitachi Ltd | Semiconductor laser element and manufacturing of the same |
| US4340967A (en) * | 1980-06-02 | 1982-07-20 | Bell Telephone Laboratories, Incorporated | Semiconductor lasers with stable higher-order modes parallel to the junction plane |
| US4787086A (en) * | 1986-05-19 | 1988-11-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | High-power, fundamental transverse mode laser |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| JPS502235B1 (US20090163788A1-20090625-C00002.png) * | 1970-09-07 | 1975-01-24 | ||
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| US3790902A (en) * | 1972-09-05 | 1974-02-05 | Bell Telephone Labor Inc | Fundamental transverse mode operation in solid state lasers |
-
1974
- 1974-01-17 US US434181A patent/US3883821A/en not_active Expired - Lifetime
- 1974-11-18 CA CA213,952A patent/CA1020657A/en not_active Expired
-
1975
- 1975-01-14 GB GB1634/75A patent/GB1493201A/en not_active Expired
- 1975-01-14 FR FR7501027A patent/FR2258711B1/fr not_active Expired
- 1975-01-15 DE DE2501344A patent/DE2501344C2/de not_active Expired
- 1975-01-17 JP JP50007184A patent/JPS5740672B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58165283U (ja) * | 1982-04-30 | 1983-11-02 | 藤倉ゴム工業株式会社 | ピストン式流体作動装置 |
| JPS58165282U (ja) * | 1982-04-30 | 1983-11-02 | 藤倉ゴム工業株式会社 | ピストン式流体作動装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3883821A (en) | 1975-05-13 |
| FR2258711B1 (US20090163788A1-20090625-C00002.png) | 1977-07-01 |
| FR2258711A1 (US20090163788A1-20090625-C00002.png) | 1975-08-18 |
| DE2501344C2 (de) | 1984-03-15 |
| CA1020657A (en) | 1977-11-08 |
| DE2501344A1 (de) | 1975-08-07 |
| JPS50104883A (US20090163788A1-20090625-C00002.png) | 1975-08-19 |
| GB1493201A (en) | 1977-11-30 |
