JPS5739536B2 - - Google Patents

Info

Publication number
JPS5739536B2
JPS5739536B2 JP13576575A JP13576575A JPS5739536B2 JP S5739536 B2 JPS5739536 B2 JP S5739536B2 JP 13576575 A JP13576575 A JP 13576575A JP 13576575 A JP13576575 A JP 13576575A JP S5739536 B2 JPS5739536 B2 JP S5739536B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13576575A
Other languages
Japanese (ja)
Other versions
JPS5259584A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13576575A priority Critical patent/JPS5259584A/ja
Publication of JPS5259584A publication Critical patent/JPS5259584A/ja
Publication of JPS5739536B2 publication Critical patent/JPS5739536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP13576575A 1975-11-11 1975-11-11 Semiconductor memory device Granted JPS5259584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13576575A JPS5259584A (en) 1975-11-11 1975-11-11 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13576575A JPS5259584A (en) 1975-11-11 1975-11-11 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5259584A JPS5259584A (en) 1977-05-17
JPS5739536B2 true JPS5739536B2 (enExample) 1982-08-21

Family

ID=15159329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13576575A Granted JPS5259584A (en) 1975-11-11 1975-11-11 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5259584A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012348U (ja) * 1983-07-04 1985-01-28 高田 容子 計量米びつ付収納庫

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101742882B1 (ko) 2015-09-10 2017-06-01 (의료)길의료재단 성대 미세 내시경

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012348U (ja) * 1983-07-04 1985-01-28 高田 容子 計量米びつ付収納庫

Also Published As

Publication number Publication date
JPS5259584A (en) 1977-05-17

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