JPS5739062B2 - - Google Patents

Info

Publication number
JPS5739062B2
JPS5739062B2 JP10155574A JP10155574A JPS5739062B2 JP S5739062 B2 JPS5739062 B2 JP S5739062B2 JP 10155574 A JP10155574 A JP 10155574A JP 10155574 A JP10155574 A JP 10155574A JP S5739062 B2 JPS5739062 B2 JP S5739062B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10155574A
Other languages
Japanese (ja)
Other versions
JPS5128763A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10155574A priority Critical patent/JPS5739062B2/ja
Priority to CA233,828A priority patent/CA1035052A/en
Priority to GB35690/75A priority patent/GB1525732A/en
Priority to NL7510282A priority patent/NL7510282A/xx
Priority to DE19752539021 priority patent/DE2539021A1/de
Priority to FR7527176A priority patent/FR2284194A1/fr
Publication of JPS5128763A publication Critical patent/JPS5128763A/ja
Publication of JPS5739062B2 publication Critical patent/JPS5739062B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP10155574A 1974-09-04 1974-09-04 Expired JPS5739062B2 (en:Method)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10155574A JPS5739062B2 (en:Method) 1974-09-04 1974-09-04
CA233,828A CA1035052A (en) 1974-09-04 1975-08-20 Vertical type junction field effect semiconductor device
GB35690/75A GB1525732A (en) 1974-09-04 1975-08-29 Junction field effect transistors
NL7510282A NL7510282A (nl) 1974-09-04 1975-09-01 Vertikale verbindingstransistoren met veldwerking.
DE19752539021 DE2539021A1 (de) 1974-09-04 1975-09-02 Feldeffekttransistor
FR7527176A FR2284194A1 (fr) 1974-09-04 1975-09-04 Transistor a effet de champ vertical

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155574A JPS5739062B2 (en:Method) 1974-09-04 1974-09-04

Publications (2)

Publication Number Publication Date
JPS5128763A JPS5128763A (en:Method) 1976-03-11
JPS5739062B2 true JPS5739062B2 (en:Method) 1982-08-19

Family

ID=14303654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10155574A Expired JPS5739062B2 (en:Method) 1974-09-04 1974-09-04

Country Status (6)

Country Link
JP (1) JPS5739062B2 (en:Method)
CA (1) CA1035052A (en:Method)
DE (1) DE2539021A1 (en:Method)
FR (1) FR2284194A1 (en:Method)
GB (1) GB1525732A (en:Method)
NL (1) NL7510282A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299787A (en) * 1976-02-18 1977-08-22 Toshiba Corp Junction type field effect transistor and its production

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB837651A (en) * 1956-12-10 1960-06-15 Teszner Stanislas High power field-effect transistor
JPS5418112B2 (en:Method) * 1971-12-20 1979-07-05
IT981240B (it) * 1972-03-10 1974-10-10 Teszner S Perfezionamenti ai gridistori per iperfrequenze

Also Published As

Publication number Publication date
CA1035052A (en) 1978-07-18
FR2284194B1 (en:Method) 1979-01-19
DE2539021A1 (de) 1976-03-25
GB1525732A (en) 1978-09-20
JPS5128763A (en:Method) 1976-03-11
FR2284194A1 (fr) 1976-04-02
NL7510282A (nl) 1976-03-08

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