JPS5733631B2 - - Google Patents
Info
- Publication number
- JPS5733631B2 JPS5733631B2 JP734537A JP453773A JPS5733631B2 JP S5733631 B2 JPS5733631 B2 JP S5733631B2 JP 734537 A JP734537 A JP 734537A JP 453773 A JP453773 A JP 453773A JP S5733631 B2 JPS5733631 B2 JP S5733631B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4078—Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computer Security & Cryptography (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21597672A | 1972-01-03 | 1972-01-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4879941A JPS4879941A (US07902200-20110308-C00004.png) | 1973-10-26 |
| JPS5733631B2 true JPS5733631B2 (US07902200-20110308-C00004.png) | 1982-07-17 |
Family
ID=22805155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP734537A Expired JPS5733631B2 (US07902200-20110308-C00004.png) | 1972-01-03 | 1972-12-29 |
Country Status (9)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2247835C3 (de) * | 1972-09-29 | 1978-10-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Regenerieren der Speicherinhalte von MOS-Speichern und MOS-Speicher zur Durchführung dieses Verfahrens |
| US3858185A (en) * | 1973-07-18 | 1974-12-31 | Intel Corp | An mos dynamic memory array & refreshing system |
| US3934233A (en) * | 1973-09-24 | 1976-01-20 | Texas Instruments Incorporated | Read-only-memory for electronic calculator |
| US3895360A (en) * | 1974-01-29 | 1975-07-15 | Westinghouse Electric Corp | Block oriented random access memory |
| US4041330A (en) * | 1974-04-01 | 1977-08-09 | Rockwell International Corporation | Selectable eight or twelve digit integrated circuit calculator and conditional gate output signal modification circuit therefor |
| US3942160A (en) * | 1974-06-03 | 1976-03-02 | Motorola, Inc. | Bit sense line speed-up circuit for MOS RAM |
| US3942162A (en) * | 1974-07-01 | 1976-03-02 | Motorola, Inc. | Pre-conditioning circuits for MOS integrated circuits |
| US3976892A (en) * | 1974-07-01 | 1976-08-24 | Motorola, Inc. | Pre-conditioning circuits for MOS integrated circuits |
| JPS526044A (en) * | 1975-07-04 | 1977-01-18 | Toko Inc | Dynamic decoder circuit |
| IT1041882B (it) * | 1975-08-20 | 1980-01-10 | Honeywell Inf Systems | Memoria dinamica a semiconduttori e relativo sistema di recarica |
| JPS52106640A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Memory peripheral circuit |
| US4044330A (en) * | 1976-03-30 | 1977-08-23 | Honeywell Information Systems, Inc. | Power strobing to achieve a tri state |
| US4060794A (en) * | 1976-03-31 | 1977-11-29 | Honeywell Information Systems Inc. | Apparatus and method for generating timing signals for latched type memories |
| JPS5645120Y2 (US07902200-20110308-C00004.png) * | 1976-08-19 | 1981-10-21 | ||
| JPS5725440Y2 (US07902200-20110308-C00004.png) * | 1976-08-31 | 1982-06-02 | ||
| JPS55150189A (en) * | 1979-05-10 | 1980-11-21 | Nec Corp | Memory circuit |
| GB2346462B (en) | 1999-02-05 | 2003-11-26 | Gec Marconi Comm Ltd | Memories |
| WO2000051133A1 (de) * | 1999-02-22 | 2000-08-31 | Infineon Technologies Ag | Verfahren zum betrieb einer speicherzellenanordnung mit selbstverstärkenden dynamischen speicherzellen |
| US6580650B2 (en) | 2001-03-16 | 2003-06-17 | International Business Machines Corporation | DRAM word line voltage control to insure full cell writeback level |
| US7916544B2 (en) | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1106689A (en) * | 1964-11-16 | 1968-03-20 | Standard Telephones Cables Ltd | Data processing equipment |
| GB1296067A (US07902200-20110308-C00004.png) * | 1969-03-21 | 1972-11-15 | ||
| US3684897A (en) * | 1970-08-19 | 1972-08-15 | Cogar Corp | Dynamic mos memory array timing system |
| US3681764A (en) * | 1971-03-15 | 1972-08-01 | Litton Systems Inc | Low power memory system |
-
1972
- 1972-01-03 US US00215976A patent/US3786437A/en not_active Expired - Lifetime
- 1972-11-10 GB GB5211872A patent/GB1406117A/en not_active Expired
- 1972-11-30 IT IT32348/72A patent/IT971424B/it active
- 1972-12-06 AU AU49689/72A patent/AU464581B2/en not_active Expired
- 1972-12-27 NL NLAANVRAGE7217648,A patent/NL182354C/xx not_active IP Right Cessation
- 1972-12-29 JP JP734537A patent/JPS5733631B2/ja not_active Expired
-
1973
- 1973-01-02 FR FR7300075A patent/FR2167600B1/fr not_active Expired
- 1973-01-03 DE DE2300165A patent/DE2300165C2/de not_active Expired
- 1973-01-04 CA CA160,586A patent/CA996260A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4879941A (US07902200-20110308-C00004.png) | 1973-10-26 |
| IT971424B (it) | 1974-04-30 |
| FR2167600B1 (US07902200-20110308-C00004.png) | 1977-07-29 |
| FR2167600A1 (US07902200-20110308-C00004.png) | 1973-08-24 |
| DE2300165C2 (de) | 1983-02-24 |
| DE2300165A1 (de) | 1973-07-19 |
| NL7217648A (US07902200-20110308-C00004.png) | 1973-07-05 |
| GB1406117A (en) | 1975-09-17 |
| AU4968972A (en) | 1974-06-06 |
| US3786437A (en) | 1974-01-15 |
| AU464581B2 (en) | 1975-08-28 |
| NL182354C (nl) | 1988-02-16 |
| NL182354B (nl) | 1987-09-16 |
| CA996260A (en) | 1976-08-31 |
