JPS5729070B2 - - Google Patents
Info
- Publication number
- JPS5729070B2 JPS5729070B2 JP6271275A JP6271275A JPS5729070B2 JP S5729070 B2 JPS5729070 B2 JP S5729070B2 JP 6271275 A JP6271275 A JP 6271275A JP 6271275 A JP6271275 A JP 6271275A JP S5729070 B2 JPS5729070 B2 JP S5729070B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6271275A JPS51138394A (en) | 1975-05-26 | 1975-05-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6271275A JPS51138394A (en) | 1975-05-26 | 1975-05-26 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51138394A JPS51138394A (en) | 1976-11-29 |
| JPS5729070B2 true JPS5729070B2 (https=) | 1982-06-21 |
Family
ID=13208202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6271275A Granted JPS51138394A (en) | 1975-05-26 | 1975-05-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51138394A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712579A (en) * | 1980-06-26 | 1982-01-22 | Tokyo Inst Of Technol | Buried type semiconductor laser |
| JPS57132387A (en) * | 1981-02-09 | 1982-08-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| EP0547281A1 (en) * | 1991-12-17 | 1993-06-23 | International Business Machines Corporation | Recessed ridge diode structure |
| JP3996408B2 (ja) * | 2002-02-28 | 2007-10-24 | ローム株式会社 | 半導体発光素子およびその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE791930A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Dispositif electroluminescent et procede pour sa fabrication |
| JPS4866784A (https=) * | 1971-12-16 | 1973-09-12 | ||
| JPS5140087A (https=) * | 1974-09-30 | 1976-04-03 | Mitsubishi Electric Corp |
-
1975
- 1975-05-26 JP JP6271275A patent/JPS51138394A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51138394A (en) | 1976-11-29 |