JPS5724664B2 - - Google Patents

Info

Publication number
JPS5724664B2
JPS5724664B2 JP6184175A JP6184175A JPS5724664B2 JP S5724664 B2 JPS5724664 B2 JP S5724664B2 JP 6184175 A JP6184175 A JP 6184175A JP 6184175 A JP6184175 A JP 6184175A JP S5724664 B2 JPS5724664 B2 JP S5724664B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6184175A
Other languages
Japanese (ja)
Other versions
JPS51138175A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50061841A priority Critical patent/JPS51138175A/ja
Publication of JPS51138175A publication Critical patent/JPS51138175A/ja
Publication of JPS5724664B2 publication Critical patent/JPS5724664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP50061841A 1975-05-26 1975-05-26 Method of manufacturing charge coupled device Granted JPS51138175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50061841A JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50061841A JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Publications (2)

Publication Number Publication Date
JPS51138175A JPS51138175A (en) 1976-11-29
JPS5724664B2 true JPS5724664B2 (cs) 1982-05-25

Family

ID=13182707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50061841A Granted JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Country Status (1)

Country Link
JP (1) JPS51138175A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097885A (en) * 1976-10-15 1978-06-27 Fairchild Camera And Instrument Corp. Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7312152A (cs) * 1972-09-11 1974-03-13

Also Published As

Publication number Publication date
JPS51138175A (en) 1976-11-29

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